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1. 发明授权

US07183201B2 Selective etching of organosilicate films over silicon oxide stop etch layers 有权
公开(公告)号：US07183201B2
公开(公告)日：2007-02-27
申请号：US09912103
申请日：2001-07-23
申请人： Huong Thanh Nguyen , Michael Scott Barnes , Li-Qun Xia , Mehul Naik
发明人： Huong Thanh Nguyen , Michael Scott Barnes , Li-Qun Xia , Mehul Naik
IPC分类号： H01L21/4763
CPC分类号： H01L21/76813 , H01L21/31138 , H01L21/3122 , H01L21/76829 , H01L21/76835
摘要： A method of selectively etching organosilicate layers in integrated circuit fabrication processes is disclosed. The organosilicate layers are selectively etched using a hydrogen-containing fluorocarbon gas. The hydrogen-containing fluorocarbon gas may be used to selectively etch an organosilicate layer formed on a silicon oxide stop etch layer when fabricating a damascene structure.

2. 发明申请

US20050158667A1 Solvent free photoresist strip and residue removal processing for post etching of low-k films 审中-公开
标题翻译：无溶剂的光致抗蚀剂条和残留物去除处理用于低k膜的后蚀刻
公开(公告)号：US20050158667A1
公开(公告)日：2005-07-21
申请号：US10761122
申请日：2004-01-20
申请人： Huong Thanh Nguyen , Mark Naoshi Kawaguchi , Mehul Naik , Li-Qun Xia , Ellie Yieh
发明人： Huong Thanh Nguyen , Mark Naoshi Kawaguchi , Mehul Naik , Li-Qun Xia , Ellie Yieh
IPC分类号： G03F7/00 , G03F7/36 , G03F7/42 , H01L21/02 , H01L21/311
CPC分类号： G03F7/427 , H01L21/02063 , H01L21/31138
摘要： A photoresist or a residue of the photoresist may by removed by the hydrogen and water plasma mixture. The process may be performed at a temperature range between about 150° C. and about 450° C., preferably about 250° C., and a power range between about 500 W and about 3000 W, preferably about 1400 W.
摘要翻译：可以通过氢和水等离子体混合物去除光致抗蚀剂或光致抗蚀剂的残余物。该方法可以在约150℃至约450℃，优选约250℃的温度范围和约500W至约3000W，优选约1400W的功率范围内进行。

3. 发明授权

US06680164B2 Solvent free photoresist strip and residue removal processing for post etching of low-k films 失效
标题翻译：无溶剂的光致抗蚀剂条和残留物去除处理用于低k膜的后蚀刻
公开(公告)号：US06680164B2
公开(公告)日：2004-01-20
申请号：US10006563
申请日：2001-11-30
申请人： Huong Thanh Nguyen , Mark Naoshi Kawaguchi , Mehul B. Naik , Li-Qun Xia , Ellie Yieh
发明人： Huong Thanh Nguyen , Mark Naoshi Kawaguchi , Mehul B. Naik , Li-Qun Xia , Ellie Yieh
IPC分类号： G03F742
CPC分类号： H01L21/02063 , G03F7/427 , H01L21/31138
摘要： A photoresist or a residue of the photoresist may by removed by the hydrogen and water plasma mixture. The process may be performed at a temperature range between about 150° C. and about 450° C., preferably about 250° C., and a power range between about 500 W and about 3000 W, preferably about 1400 W.
摘要翻译：可以通过氢和水等离子体混合物去除光致抗蚀剂或光致抗蚀剂的残余物。该方法可以在约150℃至约450℃，优选约250℃的温度范围和约500W至约3000W，优选约1400W的功率范围内进行。

4. 发明授权

US06569257B1 Method for cleaning a process chamber 失效
标题翻译：清洁处理室的方法
公开(公告)号：US06569257B1
公开(公告)日：2003-05-27
申请号：US09710357
申请日：2000-11-09
申请人： Huong Thanh Nguyen , Michael Barnes , Li-Qun Xia , Ellie Yieh
发明人： Huong Thanh Nguyen , Michael Barnes , Li-Qun Xia , Ellie Yieh
IPC分类号： B08B300
CPC分类号： H01J37/32862 , C23C16/4405
摘要： A method for cleaning silicon carbide and/or organosilicate layers from interior surfaces of a process chamber is disclosed. In one aspect, silicon carbide and/or organosilicate layers are cleaned from interior surfaces of a process chamber by treating it with a hydrogen/fluorine-based plasma. In another aspect, silicon carbide and/or organosilicate layer are cleaned from interior surfaces of the process chamber by treating it with a hydrogen-based plasma followed by a fluorine-based plasma. Alternatively, silicon carbide and/or organosilicate layers are cleaned from interior surfaces of the chamber by treating it with a fluorine-based plasma followed by a hydrogen-based plasma.
摘要翻译：公开了一种从处理室的内表面清洁碳化硅和/或有机硅酸盐层的方法。在一个方面，通过用氢/氟基等离子体处理碳化硅和/或有机硅酸盐层，从处理室的内表面清洗。另一方面，通过用基于氢的等离子体处理它，随后用氟基等离子体处理碳化硅和/或有机硅酸盐层，从处理室的内表面清洗。或者，通过用氟基等离子体处理，然后用氢基等离子体来清洗碳化硅和/或有机硅酸盐层，从室的内表面清洗。

5. 发明授权

US06521546B1 Method of making a fluoro-organosilicate layer 失效
标题翻译：制备氟 - 有机硅酸盐层的方法
公开(公告)号：US06521546B1
公开(公告)日：2003-02-18
申请号：US09593851
申请日：2000-06-14
申请人： Michael Barnes , Hichem M'Saad , Huong Thanh Nguyen , Farhad Moghadam
发明人： Michael Barnes , Hichem M'Saad , Huong Thanh Nguyen , Farhad Moghadam
IPC分类号： H01L2131
CPC分类号： H01L21/02131 , C23C16/30 , H01L21/02211 , H01L21/02274 , H01L21/3127 , H01L21/31629
摘要： A method of forming an integrated circuit using a fluoro-organosilicate layer is disclosed. The fluoro-organosilicate layer is formed by applying an electric field to a gas mixture comprising a fluoro-organosilane compound and an oxidizing gas. The fluoro-organosilicate layer is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the fluoro-organosilicate layer is used as a hardmask. In another integrated circuit fabrication process, the fluoro-organosilicate layer is incorporated into a damascene structure.
摘要翻译：公开了一种使用氟 - 有机硅酸盐层形成集成电路的方法。通过向包含氟 - 有机硅烷化合物和氧化气体的气体混合物施加电场而形成氟 - 有机硅酸盐层。氟 - 有机硅酸盐层与集成电路制造工艺兼容。在一个集成电路制造工艺中，氟 - 有机硅酸盐层用作硬掩模。在另一集成电路制造工艺中，氟 - 有机硅酸盐层被结合到镶嵌结构中。

6. 发明授权

US07097716B2 Method for performing fluorocarbon chamber cleaning to eliminate fluorine memory effect 失效
标题翻译：执行氟碳室清洗以消除氟记忆效应的方法
公开(公告)号：US07097716B2
公开(公告)日：2006-08-29
申请号：US10274093
申请日：2002-10-17
申请人： Michael Barnes , Huong Thanh Nguyen
发明人： Michael Barnes , Huong Thanh Nguyen
IPC分类号： B08B3/00
CPC分类号： C11D11/0041 , Y10S438/905
摘要： A method of cleaning a plasma etching reactor is provided. The method of cleaning a plasma etching reactor includes generating one or more plasmas from oxygen gas and a hydrogen-containing gas, and exposing interior surfaces of the reactor to the plasma(s) from the oxygen-gas and the hydrogen-containing gas. The cleaning method is used to remove deposited material, such as deposits containing fluorine, carbon, oxygen, and hydrogen from interior surfaces of the reactor. The hydrogen-containing gas may contribute to the cleaning method by providing a source of hydrogen that removes fluorine from the surfaces of the reactor.
摘要翻译：提供了一种清洗等离子体蚀刻反应器的方法。清洁等离子体蚀刻反应器的方法包括从氧气和含氢气体产生一个或多个等离子体，并将反应器的内表面从氧气和含氢气体暴露于等离子体。清洁方法用于从反应器的内表面去除沉积物，例如含有氟，碳，氧和氢的沉积物。含氢气体可以通过提供从反应器表面除去氟的氢源来促进清洗方法。

7. 发明授权

US06939434B2 Externally excited torroidal plasma source with magnetic control of ion distribution 失效
标题翻译：外部激发的环形等离子体源与磁控制的离子分布
公开(公告)号：US06939434B2
公开(公告)日：2005-09-06
申请号：US10164327
申请日：2002-06-05
申请人： Kenneth S. Collins , Hiroji Hanawa , Yan Ye , Kartik Ramaswamy , Andrew Nguyen , Michael S. Barnes , Huong Thanh Nguyen
发明人： Kenneth S. Collins , Hiroji Hanawa , Yan Ye , Kartik Ramaswamy , Andrew Nguyen , Michael S. Barnes , Huong Thanh Nguyen
IPC分类号： H01J37/32 , C23C16/00 , C23F1/00
CPC分类号： H01J37/321 , H01J37/32082 , H01J37/32412
摘要： A plasma reactor is described that includes a vacuum chamber defined by an enclosure including a side wall and a workpiece support pedestal within the chamber defining a processing region overlying said pedestal. The chamber has at least a first pair of ports near opposing sides of said processing region and a first external reentrant tube is connected at respective ends thereof to the pair of ports. The reactor further includes a process gas injection apparatus (such as a gas distribution plate) and an RF power applicator coupled to the reentrant tube for applying plasma source power to process gases within the tube to produce a reentrant torroidal plasma current through the first tube and across said processing region. A magnet controls radial distribution of plasma ion density in the processing region, the magnet having an elongate pole piece defining a pole piece axis intersecting the processing region.
摘要翻译：描述了一种等离子体反应器，其包括由壳体限定的真空室，所述外壳包括在所述腔室内的侧壁和工件支撑基座，其限定覆盖所述基座的处理区域。所述腔室具有在所述处理区域的相对侧附近的至少第一对端口，并且第一外部可折入管的相应端部连接到所述一对端口。反应器还包括工艺气体注入装置（例如气体分配板）和耦合到可折入管的RF功率施加器，其用于施加等离子体源功率以处理管内的气体，以产生通过第一管的可重入环形等离子体电流，跨越所述处理区域。磁体控制处理区域中的等离子体离子密度的径向分布，磁体具有限定与加工区域相交的极片轴线的细长极片。

8. 发明授权

US06514850B2 Interface with dielectric layer and method of making 失效
公开(公告)号：US06514850B2
公开(公告)日：2003-02-04
申请号：US09775010
申请日：2001-01-31
申请人： Li-Qun Xia , Huong Thanh Nguyen , Ellie Yieh , Dan Maydan
发明人： Li-Qun Xia , Huong Thanh Nguyen , Ellie Yieh , Dan Maydan
IPC分类号： H01L214763
CPC分类号： H01L21/76829 , H01L21/02115 , H01L21/02126 , H01L21/02167 , H01L21/0217 , H01L21/3105 , H01L21/31116 , H01L21/3144 , H01L21/76801 , H01L21/76807 , H01L21/76826
摘要： Methods of forming an interface in a dielectric material to act as an indicator for terminating an etching process, and products produced thereby.

9. 发明授权

US06511920B2 Optical marker layer for etch endpoint determination 失效
标题翻译：用于蚀刻终点测定的光学标记层
公开(公告)号：US06511920B2
公开(公告)日：2003-01-28
申请号：US09882111
申请日：2001-06-14
申请人： Huong Thanh Nguyen , Yunsang Kim , Ellie Yieh , Li-Qun Xia
发明人： Huong Thanh Nguyen , Yunsang Kim , Ellie Yieh , Li-Qun Xia
IPC分类号： H01L2131
CPC分类号： H01L21/76832 , H01L21/76813 , H01L21/76826 , H01L21/76829 , H01L22/24 , Y10S438/931
摘要： A method of forming an optical marker layer for etch endpoint determination in integrated circuit fabrication processes is disclosed. The optical marker layer is used in conjunction with organic and/or carbon-containing material layers that are used as bulk insulating materials and barrier materials. The optical marker layer is formed on the bulk insulating material layer and/or the barrier material layer by incorporating an optical marker into the surface thereof. The optical marker is incorporated into the surface of the bulk insulating material layer and/or the barrier material layer by treating such layer with an optical marker-containing gas. The optical marker layer provides an optical marker emission spectrum when it is etched during a subsequent patterning step.
摘要翻译：公开了一种在集成电路制造工艺中形成用于蚀刻端点确定的光学标记层的方法。光学标记层与用作体绝缘材料和阻隔材料的有机和/或含碳材料层结合使用。通过在其表面上并入光学标记物，在体绝缘材料层和/或阻挡材料层上形成光学标记层。通过用含有光学标记的气体处理该层，将光学标记物结合到体绝缘材料层和/或阻挡材料层的表面中。当在随后的图案化步骤中蚀刻时，光学标记层提供光学标记发射光谱。

10. 发明授权

US06258735B1 Method for using bypass lines to stabilize gas flow and maintain plasma inside a deposition chamber 有权
标题翻译：使用旁路管线来稳定气体流动并保持沉积室内的等离子体的方法
公开(公告)号：US06258735B1
公开(公告)日：2001-07-10
申请号：US09680562
申请日：2000-10-05
申请人： Li-qun Xia , Tian-hoe Lim , Huong Thanh Nguyen , Dian Sugiarto
发明人： Li-qun Xia , Tian-hoe Lim , Huong Thanh Nguyen , Dian Sugiarto
IPC分类号： H01L2131
CPC分类号： C23C16/45502 , C23C16/0245 , C23C16/401 , H01L21/02126 , H01L21/02208 , H01L21/02274 , H01L21/3146 , H01L21/31604 , H01L21/31612
摘要： The present invention provides a method of depositing a carbon doped silicon oxide film having a low dielectric constant (k). The concentration of oxygen is controlled to produce soft plasma conditions inside the chamber while a precursor gas is diverted through a bypass to stabilize the precursor gas flow prior to routing the precursor into the chamber and using a back to back plasma deposition scheme.
摘要翻译：本发明提供一种沉积具有低介电常数（k）的碳掺杂氧化硅膜的方法。控制氧的浓度以在室内产生软的等离子体条件，同时通过旁路转移前体气体以在将前体引入室内并使用背靠背等离子体沉积方案之前稳定前体气体流。

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