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1. 发明授权

US5618594A Composite thermocouple protection tubes 失效
标题翻译：复合热电偶保护管
公开(公告)号：US5618594A
公开(公告)日：1997-04-08
申请号：US421177
申请日：1995-04-13
申请人： Kenneth F. Tulloch , Lee E. Burns , Hemandt D. Desai , Raymond L. Taylor
发明人： Kenneth F. Tulloch , Lee E. Burns , Hemandt D. Desai , Raymond L. Taylor
IPC分类号： G01K1/08 , G01K1/10 , G01K7/02 , B29D22/00 , A47G19/22 , B32B1/04
CPC分类号： G01K1/10 , Y10T428/13 , Y10T428/131 , Y10T428/22 , Y10T428/232 , Y10T428/239
摘要： A semiconductor protection tube is a ceramic tube with a layer of silicon carbide covering at least a portion of the tube adjacent an open front end of the tube and extending forward of the open end to form a hollow, closed-end tip. The protection tube is formed by providing the ceramic tube, inserting a mandrel through the tube to extend forward of the front end, and depositing silicon carbide by chemical vapor deposition over at least a front portion of the ceramic tube and over the forward-extending portion of the mandrel. Subsequent removal of the mandrel completes the production of the protection tube.
摘要翻译：半导体保护管是陶瓷管，其具有覆盖管的至少一部分的碳化硅层，邻近管的开放前端并且在开口端的前方延伸以形成中空的封闭端尖端。保护管是通过提供陶瓷管，通过管插入心轴以向前延伸的方式形成的，并且通过化学气相沉积在至少陶瓷管的前部上并在前延伸部分之上沉积碳化硅的心轴。随后的心轴移除完成了保护管的生产。

2. 发明授权

US5654034A Composite thermocouple protection tubes 失效
公开(公告)号：US5654034A
公开(公告)日：1997-08-05
申请号：US655717
申请日：1996-08-07
申请人： Kenneth F. Tulloch , Lee E. Burns , Hemant D. Desai , Raymond L. Taylor
发明人： Kenneth F. Tulloch , Lee E. Burns , Hemant D. Desai , Raymond L. Taylor
IPC分类号： G01K1/08 , G01K1/10 , G01K7/02 , C23C16/32
CPC分类号： G01K1/10 , Y10T428/13 , Y10T428/131 , Y10T428/22 , Y10T428/232 , Y10T428/239
摘要： A semiconductor protection tube is a ceramic tube with a layer of silicon carbide covering at least a portion of the tube adjacent an open front end of the tube and extending forward of the open end to form a hollow, closed-end tip. The protection tube is formed by providing the ceramic tube, inserting a mandrel through the tube to extend forward of the front end, and depositing silicon carbide by chemical vapor deposition over at least a front portion of the ceramic tube and over the forward-extending portion of the mandrel. Subsequent removal of the mandrel completes the production of the protection tube.

3. 发明授权

US5741445A Method of making lightweight closed-back mirror 失效
标题翻译：制造轻质封闭镜的方法
公开(公告)号：US5741445A
公开(公告)日：1998-04-21
申请号：US596021
申请日：1996-02-06
申请人： Raymond L. Taylor , Michael A. Pickering , Lee E. Burns
发明人： Raymond L. Taylor , Michael A. Pickering , Lee E. Burns
IPC分类号： G02B5/08 , H01Q15/14 , B29D11/00
CPC分类号： H01Q15/141 , G02B5/08
摘要： A method of forming a light weight, closed-back mirror. The mirror is formed as a monolithic construction by the use of chemical vapor deposition techniques. A first deposition forms sheets of the material, which are machined to the proper size to form reinforcing ribs. A sacrificial mandrel is formed with grooves to receive the ribs in their assembled positions. The upper surface of the mandrel is in proximity to the rear edges of the ribs to form a substantially continuous surface. The mandrel and ribs are then subjected to a chemical vapor deposition process which forms a first coating upon the outer face of the mandrel, forming a back plate and side wall. The mandrel is then turned over, and the base is removed by machining to expose the front edges of the ribs. This process leaves islands of mandrel material between the ribs to form a substantially continuous surface. The mandrel and ribs are then subjected to a chemical vapor deposition process. This forms a second coating upon the lower surface of the mandrel, used as the mirror face. To reduce weight, holes are drilled through the back plate, and the remaining, encapsulated, mandrel material is removed by oxidation.
摘要翻译：一种形成轻质封闭式后视镜的方法。反射镜通过使用化学气相沉积技术形成为整体结构。首先沉积形成材料片材，其被加工成适当的尺寸以形成加强肋。牺牲心轴形成有凹槽以在其组装位置接收肋。心轴的上表面靠近肋的后边缘以形成基本连续的表面。然后将心轴和肋条进行化学气相沉积工艺，其在心轴的外表面上形成第一涂层，形成背板和侧壁。然后将心轴翻转，并且通过机械加工去除基底以露出肋的前边缘。该工艺在肋之间留下芯棒材料岛以形成基本连续的表面。然后对心轴和肋进行化学气相沉积工艺。这在心轴的下表面上形成第二涂层，用作镜面。为了减轻重量，通过后板钻出孔，并且通过氧化除去剩余的封装的心轴材料。

4. 发明授权

US5476549A Process for an improved laminate of ZnSe and ZnS 失效
标题翻译： ZnSe和ZnS的改进层压体的方法
公开(公告)号：US5476549A
公开(公告)日：1995-12-19
申请号：US393770
申请日：1995-02-24
申请人： Raymond L. Taylor , Lee E. Burns , James C. MacDonald
发明人： Raymond L. Taylor , Lee E. Burns , James C. MacDonald
IPC分类号： C23C16/02 , C23C16/30 , C23C16/458 , C23C16/00
CPC分类号： C23C16/306 , C23C16/0254 , C23C16/4581
摘要： The surface of a zinc selenide substrate is ground to curve in the opposite direction from that which occurs due to the bimetallic effect when zinc sulfide is deposited on a flat substrate by the chemical vapor deposition process. The bowing of the interface that occurs upon cooling of the hot laminate when the surface of the substrate is flat before deposition is compensated for by the pre-figured bowing. A distortion free window for the transmission of infra-red radiation is provided by this invention.
摘要翻译：当硫化锌通过化学气相沉积工艺沉积在平坦的衬底上时，由于双金属效应，将硒化锌衬底的表面研磨成与发生相反的方向的曲线。当在沉积之前衬底的表面平坦时，在热层压体冷却时发生的界面弯曲由预先弯曲的弯曲补偿。本发明提供了用于传输红外辐射的无失真窗口。

5. 发明授权

US5612132A Chemical vapor deposition-produced silicon carbide having improved properties 失效
标题翻译：化学气相沉积生产的具有改进性能的碳化硅
公开(公告)号：US5612132A
公开(公告)日：1997-03-18
申请号：US455007
申请日：1995-05-31
申请人： Jitendra S. Goela , Lee E. Burns , Raymond L. Taylor
发明人： Jitendra S. Goela , Lee E. Burns , Raymond L. Taylor
IPC分类号： C01B31/36 , B28B1/30 , C04B35/565 , C04B35/571 , C23C16/01 , C23C16/32 , C23C16/44
CPC分类号： C04B35/571 , C23C16/01 , C23C16/325 , C23C16/4404 , Y10S438/931 , Y10T428/26
摘要： .beta.-silicon carbide which is optically transmitting in the visible and infrared regions is produced by chemical vapor deposition. Deposition conditions are temperatures within a 1400.degree.-1500.degree. C. range, pressure 50 torr or less, H.sub.2 /methyltrichlorosilane molar ratios of 4-30 and a deposition rate of 1 .mu.m or less.
摘要翻译：通过化学气相沉积制造在可见光和红外区域中透光的β-碳化硅。沉积条件是温度在1400°-1500℃范围内，压力50托或更低，H 2 /甲基三氯硅烷摩尔比为4-30，沉积速率为1μm或更小。

6. 发明授权

US5183689A Process for an improved laminated of ZnSe and ZnS 失效
标题翻译：改进的ZNSE和ZNS层压工艺
公开(公告)号：US5183689A
公开(公告)日：1993-02-02
申请号：US729980
申请日：1991-07-15
申请人： Raymond L. Taylor , Lee E. Burns , James C. MacDonald
发明人： Raymond L. Taylor , Lee E. Burns , James C. MacDonald
IPC分类号： B32B9/00 , C23C16/02 , C23C16/30 , C23C16/458 , G02B1/00 , G02B5/20
CPC分类号： C23C16/0254 , C23C16/306 , C23C16/4581
摘要： The surface of a zinc selenide substrate is ground to curve in the opposite direction from that which occurs due to the bimetallic effect when zinc sulfide is deposited on a flat substrate by the chemical vapor deposition process. The bowing of the interface that occurs upon cooling of the hot laminate when the surface of the substrate is flat before deposition is compensated for by the pre-figured bowing. A distortion free window for the transmission of infra-red radiation is provided by this invention.

7. 发明授权

US5686195A Process for an improved laminate of ZnSe and ZnS 失效
标题翻译： ZnSe和ZnS的改进层压体的方法
公开(公告)号：US5686195A
公开(公告)日：1997-11-11
申请号：US378030
申请日：1995-01-24
申请人： Raymond L. Taylor , Lee E. Burns , James C. MacDonald
发明人： Raymond L. Taylor , Lee E. Burns , James C. MacDonald
IPC分类号： B32B9/00 , C23C16/02 , C23C16/30 , C23C16/458 , G02B1/00 , G02B5/20 , B32B18/00
CPC分类号： C23C16/0254 , C23C16/306 , C23C16/4581
摘要： The surface of a zinc selenide substrate is ground to curve in the opposite direction from that which occurs due to the bimetallic effect when zinc sulfide is deposited on a flat substrate by the chemical vapor deposition process. The bowing of the interface that occurs upon cooling of the hot laminate when the surface of the substrate is flat before deposition is compensated for by the pre-figured bowing. A distortion free window for the transmission of infra-red radiation is provided by this invention.
摘要翻译：当硫化锌通过化学气相沉积工艺沉积在平坦的衬底上时，由于双金属效应，将硒化锌衬底的表面研磨成与发生相反的方向的曲线。当在沉积之前衬底的表面平坦时，在热层压体冷却时发生的界面弯曲由预先弯曲的弯曲补偿。本发明提供了用于传输红外辐射的无失真窗口。

8. 发明授权

US5604151A Chemical vapor deposition-produced silicon carbide having improved properties 失效
公开(公告)号：US5604151A
公开(公告)日：1997-02-18
申请号：US439034
申请日：1995-05-11
申请人： Jitendra S. Goela , Lee E. Burns , Raymond L. Taylor
发明人： Jitendra S. Goela , Lee E. Burns , Raymond L. Taylor
IPC分类号： C01B31/36 , B28B1/30 , C04B35/565 , C04B35/571 , C23C16/01 , C23C16/32 , C23C16/44 , H01L21/20
CPC分类号： C04B35/571 , C23C16/01 , C23C16/325 , C23C16/4404 , Y10S438/931 , Y10T428/26
摘要： .beta.-silicon carbide which is optically transmitting in the visible and infrared regions is produced by chemical vapor deposition. Deposition conditions are temperatures within a 1400.degree.-1500.degree. C. range, pressure 50 torr or less, H.sub.2 /methyltrichlorosilane molar ratios of 4-30 and a deposition rate of 1 .mu.m or less.

9. 发明授权

US4997678A Chemical vapor deposition process to replicate the finish and figure of preshaped structures 失效
标题翻译：化学气相沉积工艺来复制预成型结构的表面和形状
公开(公告)号：US4997678A
公开(公告)日：1991-03-05
申请号：US425076
申请日：1989-10-23
申请人： Raymond L. Taylor , Michael A. Pickering , Joseph T. Keeley
发明人： Raymond L. Taylor , Michael A. Pickering , Joseph T. Keeley
IPC分类号： C23C16/22 , C23C16/01 , C23C16/26 , C23C16/32 , C23C16/44
CPC分类号： C23C16/325 , C23C16/01 , C23C16/26
摘要： A process is disclosed by which the finish and figure of polished preshaped structures (such as mirrors) can be replicated directly by chemical vapor deposition, with only minor polishing of the replica being required to obtain a final product, and with the original substrate being reusable for further replication. Relevant conditions under which the process can be carried out are given. Featured in the process is a pretreatment step prior to the deposition of a layer of silicon carbide to form the replica, which pretreatment step involves the formation on the polished substrate of an oxide layer and a carbon layer of high finish and uniform thickness. The carbon layer allows easy separation of the substrate and replica which otherwise would be bound together.

10. 发明授权

US4963393A Method to prevent backside growth on substrates in a vapor deposition system 失效
标题翻译：防止气相沉积系统中底物背面生长的方法
公开(公告)号：US4963393A
公开(公告)日：1990-10-16
申请号：US403957
申请日：1989-09-07
申请人： Jitendra S. Goela , Roy D. Jaworski , Raymond L. Taylor
发明人： Jitendra S. Goela , Roy D. Jaworski , Raymond L. Taylor
IPC分类号： C23C16/44 , C23C16/04 , C23C16/458
CPC分类号： C23C16/042 , C23C16/4583
摘要： Backside growth on substrates in a vapor deposition system has been a problem resulting in cracking of the material deposited on the substrate, making replication in a vapor deposition system difficult to achieve, and requiring post deposition machining to separate the substrate-deposit from the deposition fixture. A solution to the problem is the following: the substrate is mounted on a plurality of graphite pillars, with the pillars being bonded to the substrate as near the periphery thereof as possible. A hollow body open on one side but closed on the other, and fabricated from GRAFOIL with graphite cement used as a bonding agent, is mounted on the pillars with the open end facing the substrate. The open end of the body is pressed against the substrate and sealed with a bonding agent. This completely covers the backside of the substrate and thus prevents any vapor deposition thereon.
摘要翻译：在气相沉积系统中在基底上的背面生长已经成为导致沉积在基底上的材料破裂的问题，难以实现在气相沉积系统中的复制，并且需要后沉积加工以将基底沉积物与沉积夹具分开。该问题的解决方案如下：将基板安装在多个石墨柱上，其中柱子尽可能靠近其周边地结合到基板。在一侧敞开但封闭的中空体，由用作粘合剂的石墨粘结剂的GRAFOIL制成，其顶端朝向基材安装在支柱上。将本体的开口端压在基板上并用粘合剂密封。这完全覆盖基板的背面，从而防止其上的任何气相沉积。

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