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1. 发明授权

US5654034A Composite thermocouple protection tubes 失效
公开(公告)号：US5654034A
公开(公告)日：1997-08-05
申请号：US655717
申请日：1996-08-07
申请人： Kenneth F. Tulloch , Lee E. Burns , Hemant D. Desai , Raymond L. Taylor
发明人： Kenneth F. Tulloch , Lee E. Burns , Hemant D. Desai , Raymond L. Taylor
IPC分类号： G01K1/08 , G01K1/10 , G01K7/02 , C23C16/32
CPC分类号： G01K1/10 , Y10T428/13 , Y10T428/131 , Y10T428/22 , Y10T428/232 , Y10T428/239
摘要： A semiconductor protection tube is a ceramic tube with a layer of silicon carbide covering at least a portion of the tube adjacent an open front end of the tube and extending forward of the open end to form a hollow, closed-end tip. The protection tube is formed by providing the ceramic tube, inserting a mandrel through the tube to extend forward of the front end, and depositing silicon carbide by chemical vapor deposition over at least a front portion of the ceramic tube and over the forward-extending portion of the mandrel. Subsequent removal of the mandrel completes the production of the protection tube.

2. 发明授权

US5102694A Pulsed chemical vapor deposition of gradient index optical material 失效
标题翻译：梯度指数光学材料的脉冲化学气相沉积
公开(公告)号：US5102694A
公开(公告)日：1992-04-07
申请号：US588788
申请日：1990-09-27
申请人： Raymond L. Taylor , Hemant D. Desai
发明人： Raymond L. Taylor , Hemant D. Desai
IPC分类号： C23C16/30 , C23C16/44 , C23C16/455 , G02B1/00
CPC分类号： C23C16/45523 , C23C16/306 , G02B1/00
摘要： Periodic pulsing of the gaseous reactant flows during chemical vapor deposition of gradient index optical material markedly improves the refractive index homogeneity of the deposit with the frequency of the pulsing being variable over a wide range but the number and size of the inhomogeneities, or nodules, being significantly reduced at higher pulsing frequencies.
摘要翻译：梯度折射率光学材料的化学气相沉积期间气态反应物的周期性脉冲流动显着改善了沉积物的折射率均匀性，脉冲频率在宽范围内是可变的，但是不均匀性或结节的数量和大小是在更高的脉冲频率下显着降低。

3. 发明授权

US08921203B2 Method of forming an integrated circuit having varying substrate depth 有权
标题翻译：形成具有变化的衬底深度的集成电路的方法
公开(公告)号：US08921203B2
公开(公告)日：2014-12-30
申请号：US13750419
申请日：2013-01-25
申请人： Lisa H. Karlin , Hemant D. Desai , Kemiao Jia
发明人： Lisa H. Karlin , Hemant D. Desai , Kemiao Jia
IPC分类号： H01L21/30
CPC分类号： B81B7/0077 , B81B3/0021 , B81B2201/0235 , B81B2203/0163 , G01P15/0802 , G01P15/18 , G01P2015/086 , H01L29/66007 , H01L29/84
摘要： A method for forming a semiconductor device includes providing a substrate having a first major surface and a second major surface, removing a first portion of the substrate to form a cavity at the first major surface of the substrate, bonding the first major surface of the substrate to a carrier substrate after forming the cavity, and reducing a thickness of the substrate. The method further includes forming a first accelerometer device at the second major surface such that at least a portion of the first accelerometer device is over the cavity and forming a second accelerometer device at the second major surface such that the second accelerometer device is not disposed over the cavity.
摘要翻译：一种形成半导体器件的方法包括提供具有第一主表面和第二主表面的衬底，去除衬底的第一部分以在衬底的第一主表面处形成空腔，将衬底的第一主表面在形成空腔之后到载体基板，并且减小基板的厚度。该方法还包括在第二主表面处形成第一加速度计装置，使得第一加速度计装置的至少一部分在空腔之上并且在第二主表面处形成第二加速度计装置，使得第二加速度计装置不被布置在空腔。

4. 发明授权

US08487387B2 MEMS sensor device with multi-stimulus sensing 失效
标题翻译：具有多刺激感知的MEMS传感器装置
公开(公告)号：US08487387B2
公开(公告)日：2013-07-16
申请号：US13526279
申请日：2012-06-18
申请人： Yizhen Lin , Woo Tae Park , Mark E. Schlarmann , Hemant D. Desai
发明人： Yizhen Lin , Woo Tae Park , Mark E. Schlarmann , Hemant D. Desai
IPC分类号： H01L29/82
CPC分类号： H01L28/60 , B81B7/02 , B81B2201/025 , B81B2201/0264 , G01L9/0073 , G01L19/0092 , G01P15/0802 , G01P15/125 , G01P2015/0814 , G01P2015/088 , H01G5/18
摘要： A device (20, 90) includes sensors (28, 30) that sense different physical stimuli. A pressure sensor (28) includes a reference element (44) and a sense element (52), and an inertial sensor (30) includes a movable element (54). Fabrication (110) entails forming (112) a first substrate structure (22, 92) having a cavity (36, 100), forming a second substrate structure (24) to include the sensors (28, 30), and coupling (128) the substrate structures so that the first sensor (28) is aligned with the cavity (36, 100) and the second sensor (30) is laterally spaced apart from the first sensor (28). Forming the second structure (24) includes forming (118) the sense element (52) from a material layer (124) of the second structure (24) and following coupling (128) of the substrate structures, concurrently forming (132) the reference element (44) and the movable element (54) in a wafer substrate (122) of the second structure (24).
摘要翻译：装置（20,90）包括感测不同物理刺激的传感器（28,30）。压力传感器（28）包括参考元件（44）和感测元件（52），惯性传感器（30）包括可移动元件（54）。制造（110）需要形成（112）具有空腔（36,100）的第一衬底结构（22,92），形成包括传感器（28,30）的第二衬底结构（24）和耦合（128）所述基板结构使得所述第一传感器（28）与所述空腔（36,100）对准，并且所述第二传感器（30）与所述第一传感器（28）横向间隔开。形成第二结构（24）包括从第二结构（24）的材料层（124）和衬底结构的耦合（128）形成（118）感测元件（52），同时形成（132）参考元件（44）和第二结构（24）的晶片衬底（122）中的可移动元件（54）。

5. 发明授权

US08461656B2 Device structures for in-plane and out-of-plane sensing micro-electro-mechanical systems (MEMS) 有权
标题翻译：用于平面内和平面外感测微机电系统（MEMS）的器件结构
公开(公告)号：US08461656B2
公开(公告)日：2013-06-11
申请号：US12827848
申请日：2010-06-30
申请人： Woo Tae Park , Lisa H. Karlin , Lianjun Liu , Heinz Loreck , Hemant D. Desai
发明人： Woo Tae Park , Lisa H. Karlin , Lianjun Liu , Heinz Loreck , Hemant D. Desai
IPC分类号： H04R23/00
CPC分类号： B81C1/00182 , B81B2201/0235 , B81C2203/0792 , G01P15/0802 , G01P15/125 , H01L29/84
摘要： A device structure is made using a first conductive layer over a first wafer. An isolated conductive region is formed in the first conductive layer surrounded by a first opening in the conductive layer. A second wafer has a first insulating layer and a conductive substrate, wherein the conductive substrate has a first major surface adjacent to the first insulating layer. The insulating layer is attached to the isolated conductive region. The conductive substrate is thinned to form a second conductive layer. A second opening is formed through the second conductive layer and the first insulating layer to the isolated conductive region. The second opening is filled with a conductive plug wherein the conductive plug contacts the isolated conductive region. The second conductive region is etched to form a movable finger over the isolated conductive region. A portion of the insulating layer under the movable finger is removed.
摘要翻译：使用第一晶片上的第一导电层制造器件结构。在由导电层中的第一开口包围的第一导电层中形成隔离的导电区域。第二晶片具有第一绝缘层和导电衬底，其中导电衬底具有与第一绝缘层相邻的第一主表面。绝缘层附接到隔离导电区域。导电基板被薄化以形成第二导电层。通过第二导电层和第一绝缘层形成第二开口到隔离的导电区域。第二开口填充有导电插头，其中导电插头接触隔离的导电区域。蚀刻第二导电区域以在隔离的导电区域上形成可移动的手指。去除可动指状物下面的绝缘层的一部分。

6. 发明申请

US20110042761A1 EUTECTIC FLOW CONTAINMENT IN A SEMICONDUCTOR FABRICATION PROCESS 有权
标题翻译：半导体制造工艺中的保护性流动容纳
公开(公告)号：US20110042761A1
公开(公告)日：2011-02-24
申请号：US12914859
申请日：2010-10-28
申请人： Lisa H. Karlin , Hemant D. Desai
发明人： Lisa H. Karlin , Hemant D. Desai
IPC分类号： H01L23/00 , H01L29/84
CPC分类号： H01L23/10 , B81C1/00269 , B81C2203/019 , H01L23/04 , H01L2924/0002 , H01L2924/01079 , H01L2924/00
摘要： A disclosed semiconductor fabrication process includes forming a first bonding structure on a first surface of a cap wafer, forming a second bonding structure on a first surface of a device wafer, and forming a device structure on the device wafer. One or more eutectic flow containment structures are formed on the cap wafer, the device wafer, or both. The flow containment structures may include flow containment micro-cavities (FCMCs) and flow containment micro-levee (FCMLs). The FCMLs may be elongated ridges overlying the first surface of the device wafer and extending substantially parallel to the bonding structure. The FCMLs may include interior FCMLs lying within a perimeter of the bonding structure, exterior FCMLs lying outside of the bonding structure perimeter, or both. When the two wafers are bonded, the FCMLs and FCMCs confine flow of the eutectic material to the region of the bonding structure.
摘要翻译：所公开的半导体制造工艺包括在盖晶片的第一表面上形成第一接合结构，在器件晶片的第一表面上形成第二接合结构，并在器件晶片上形成器件结构。在盖晶片，器件晶片或两者上形成一个或多个共晶流阻塞结构。流动容纳结构可以包括流动容纳微空腔（FCMC）和流动容纳微堤（FCML）。 FCML可以是覆盖在器件晶片的第一表面上并且基本上平行于接合结构延伸的细长脊。 FCML可以包括位于结合结构的周边内部的内部FCML，位于结合结构周边外部的外部FCML或两者。当两个晶片结合时，FCML和FCMC将共晶材料的流动限制在接合结构的区域。

7. 发明授权

US08316718B2 MEMS pressure sensor device and method of fabricating same 有权
标题翻译： MEMS压力传感器装置及其制造方法
公开(公告)号：US08316718B2
公开(公告)日：2012-11-27
申请号：US12861435
申请日：2010-08-23
申请人： Yizhen Lin , Woo Tae Park , Mark E. Schlarmann , Hemant D. Desai
发明人： Yizhen Lin , Woo Tae Park , Mark E. Schlarmann , Hemant D. Desai
IPC分类号： G01L9/12
CPC分类号： B81C1/00309 , B81B2201/0264 , G01L9/0073 , Y10T29/49126
摘要： A microelectromechanical systems (MEMS) pressure sensor device (20, 62) includes a substrate structure (22, 64) having a cavity (32, 68) formed therein and a substrate structure (24) having a reference element (36) formed therein. A sense element (44) is interposed between the substrate structures (22, 24) and is spaced apart from the reference element (36). The sense element (44) is exposed to an external environment (48) via one of the cavity (68) and a plurality of openings (38) formed in the reference element (36). The sense element (44) is movable relative to the reference element (36) in response to a pressure stimulus (54) from the environment (48). Fabrication methodology (76) entails forming (78) the substrate structure (22, 64) having the cavity (32, 68), fabricating (84) the substrate structure (24) including the sense element (44), coupling (92) the substrate structures, and subsequently forming (96) the reference element (36) in the substrate structure (24).
摘要翻译：微机电系统（MEMS）压力传感器装置（20,62）包括其中形成有空腔（32,68）的基板结构（22,64）和在其中形成有参考元件（36）的基板结构（24）。感测元件（44）插入在衬底结构（22,24）之间并且与参考元件（36）间隔开。感测元件（44）通过空腔（68）中的一个和形成在参考元件（36）中的多个开口（38）而暴露于外部环境（48）。响应于来自环境（48）的压力刺激（54），感测元件（44）可相对于参考元件（36）移动。制造方法（76）需要形成（78）具有空腔（32,68）的衬底结构（22,64），制造（84）包括感测元件（44）的衬底结构（24），耦合（92）衬底结构，随后在衬底结构（24）中形成（96）参考元件（36）。

8. 发明申请

US20120043627A1 MEMS Sensor Device With Multi-Stimulus Sensing and Method of Fabricating Same 有权
标题翻译：具有多重激励传感的MEMS传感器装置及其制造方法
公开(公告)号：US20120043627A1
公开(公告)日：2012-02-23
申请号：US12861509
申请日：2010-08-23
申请人： Yizhen Lin , Mark E. Schlarmann , Hemant D. Desai , Woo Tae Park
发明人： Yizhen Lin , Mark E. Schlarmann , Hemant D. Desai , Woo Tae Park
IPC分类号： H01L29/84 , H01L21/02
CPC分类号： H01L28/60 , B81B7/02 , B81B2201/025 , B81B2201/0264 , G01L9/0073 , G01L19/0092 , G01P15/0802 , G01P15/125 , G01P2015/0814 , G01P2015/088 , H01G5/18
摘要： A device (20, 90) includes sensors (28, 30) that sense different physical stimuli. A pressure sensor (28) includes a reference element (44) and a sense element (52), and an inertial sensor (30) includes a movable element (54). Fabrication (110) entails forming (112) a first substrate structure (22, 92) having a cavity (36, 100), forming a second substrate structure (24) to include the sensors (28, 30), and coupling (128) the substrate structures so that the first sensor (28) is aligned with the cavity (36, 100) and the second sensor (30) is laterally spaced apart from the first sensor (28). Forming the second structure (24) includes forming (118) the sense element (52) from a material layer (124) of the second structure (24) and following coupling (128) of the substrate structures, concurrently forming (132) the reference element (44) and the movable element (54) in a wafer substrate (122) of the second structure (24).
摘要翻译：装置（20,90）包括感测不同物理刺激的传感器（28,30）。压力传感器（28）包括参考元件（44）和感测元件（52），惯性传感器（30）包括可移动元件（54）。制造（110）需要形成（112）具有空腔（36,100）的第一衬底结构（22,92），形成包括传感器（28,30）的第二衬底结构（24）和耦合（128）所述基板结构使得所述第一传感器（28）与所述空腔（36,100）对准，并且所述第二传感器（30）与所述第一传感器（28）横向间隔开。形成第二结构（24）包括从第二结构（24）的材料层（124）和衬底结构的耦合（128）形成（118）感测元件（52），同时形成（132）参考元件（44）和第二结构（24）的晶片衬底（122）中的可移动元件（54）。

9. 发明申请

US20120042731A1 MEMS Pressure Sensor Device and Method of Fabricating Same 有权
标题翻译： MEMS压力传感器装置及其制造方法
公开(公告)号：US20120042731A1
公开(公告)日：2012-02-23
申请号：US12861435
申请日：2010-08-23
申请人： Yizhen Lin , Mark E. Schlarmann , Hemant D. Desai , Woo Tae Park
发明人： Yizhen Lin , Mark E. Schlarmann , Hemant D. Desai , Woo Tae Park
IPC分类号： G01L9/12 , H05K3/36
CPC分类号： B81C1/00309 , B81B2201/0264 , G01L9/0073 , Y10T29/49126
摘要： A microelectromechanical systems (MEMS) pressure sensor device (20, 62) includes a substrate structure (22, 64) having a cavity (32, 68) formed therein and a substrate structure (24) having a reference element (36) formed therein. A sense element (44) is interposed between the substrate structures (22, 24) and is spaced apart from the reference element (36). The sense element (44) is exposed to an external environment (48) via one of the cavity (68) and a plurality of openings (38) formed in the reference element (36). The sense element (44) is movable relative to the reference element (36) in response to a pressure stimulus (54) from the environment (48). Fabrication methodology (76) entails forming (78) the substrate structure (22, 64) having the cavity (32, 68), fabricating (84) the substrate structure (24) including the sense element (44), coupling (92) the substrate structures, and subsequently forming (96) the reference element (36) in the substrate structure (24).
摘要翻译：微机电系统（MEMS）压力传感器装置（20,62）包括其中形成有腔（32,68）的衬底结构（22,64）和具有形成在其中的参考元件（36）的衬底结构（24）。感测元件（44）插入在衬底结构（22,24）之间并且与参考元件（36）间隔开。感测元件（44）通过空腔（68）中的一个和形成在参考元件（36）中的多个开口（38）而暴露于外部环境（48）。响应于来自环境（48）的压力刺激（54），感测元件（44）可相对于参考元件（36）移动。制造方法（76）需要形成（78）具有空腔（32,68）的衬底结构（22,64），制造（84）包括感测元件（44）的衬底结构（24），耦合（92）衬底结构，随后在衬底结构（24）中形成（96）参考元件（36）。

10. 发明授权

US07316965B2 Substrate contact for a capped MEMS and method of making the substrate contact at the wafer level 有权
标题翻译：用于封装的MEMS的衬底接触和在晶片级使衬底接触的方法
公开(公告)号：US07316965B2
公开(公告)日：2008-01-08
申请号：US11158793
申请日：2005-06-21
申请人： Stephen R. Hooper , Hemant D. Desai , William G. McDonald , Arvind S. Salian
发明人： Stephen R. Hooper , Hemant D. Desai , William G. McDonald , Arvind S. Salian
IPC分类号： H01L21/00
CPC分类号： B81B3/0086 , B81B2201/0235 , B81B2207/07 , B81B2207/098 , B81C2203/0118 , G01P15/0802 , G01P15/125 , G01P2015/0814
摘要： A MEMS device (100) is provided that includes a handle layer (108) having a sidewall (138), a cap (132) overlying said handle layer (108), said cap (132) having a sidewall (138), and a conductive material (136) disposed on at least a portion of said sidewall of said cap (138) and said sidewall of said handle layer (138) to thereby electrically couple said handle layer (108) to said cap (132). A wafer-level method for manufacturing the MEMS device from a substrate (300) comprising a handle layer (108) and a cap (132) overlying the handle layer (108) is also provided. The method includes making a first cut through the cap (132) and at least a portion of the substrate (300) to form a first sidewall (138), and depositing a conductive material (136) onto the first sidewall (138) to electrically couple the cap (132) to the substrate (300).
摘要翻译：提供了一种MEMS器件（100），其包括具有侧壁（138）的手柄层（108），覆盖所述手柄层（108）的盖（132），所述盖（132）具有侧壁（138）导电材料（136），设置在所述盖子（138）的所述侧壁和所述手柄层（138）的所述侧壁的至少一部分上，从而将所述手柄层（108）电耦合到所述盖子（132）。还提供了用于从包括手柄层（108）和覆盖在手柄层（108）上的盖子（132）的衬底（300）制造MEMS器件的晶片级方法。该方法包括通过帽（132）和基底（300）的至少一部分进行第一次切割以形成第一侧壁（138），以及将导电材料（136）沉积到第一侧壁（138）上以电将盖（132）耦合到基板（300）。

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