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1. 发明授权

US5047821A Transferred electron III-V semiconductor photocathode 失效
标题翻译：转移电子III-V半导体光电阴极
公开(公告)号：US5047821A
公开(公告)日：1991-09-10
申请号：US494044
申请日：1990-03-15
申请人： Kenneth A. Costello , William E. Spicer , Verle W. Aebi
发明人： Kenneth A. Costello , William E. Spicer , Verle W. Aebi
IPC分类号： H01J1/34 , H01L31/108
CPC分类号： H01J1/34 , H01J2201/3423
摘要： An improved transferred electron III-V semiconductor photocathode comprising an aluminum contact pad and an aluminum grid structure that improves quantum efficiency by removing a major obstacle to electrons escaping into the vacuum and controls dark spot blooming caused by overly bright photon emission sources.
摘要翻译：一种改进的转移电子III-V半导体光电阴极，其包括铝接触焊盘和铝格栅结构，其通过去除逃逸到真空中的电子的主要障碍并控制由过亮的光子发射源引起的暗斑开花，从而提高量子效率。

2. 发明授权

US4567503A MIS Device employing elemental pnictide or polyphosphide insulating layers 失效
标题翻译： MIS器件采用元素pnictide或多磷化物绝缘层
公开(公告)号：US4567503A
公开(公告)日：1986-01-28
申请号：US509210
申请日：1983-06-29
申请人： Diego Olego , David G. Brock , John A. Baumann , William E. Spicer
发明人： Diego Olego , David G. Brock , John A. Baumann , William E. Spicer
IPC分类号： H01L29/812 , H01L21/314 , H01L21/338 , H01L23/29 , H01L23/31 , H01L29/78 , H01L31/04 , H01L31/10 , H01L33/00 , H01L29/34 , H01L29/20 , H01L29/161
CPC分类号： H01L23/291 , H01L21/314 , H01L23/3171 , H01L2924/0002 , H01L2924/13063 , H01L2924/3025
摘要： Metal-insulator-semiconductor devices are formed on III-V semiconductors utilizing a pnictide rich insulating layer. The layer may be applied by vacuum evaporation, sputtering, chemical vapor deposition, and from a liquid melt. Gallium arsenide, indium phosphide, and gallium phosphide substrates are insulated with an alkali metal high pnictide polypnictide, preferably a polyphosphide, having the formula MP.sub.x where x is equal to or greater than 15, including new forms of phosphorus grown in the presence of an alkali metal where x is much greater than 15. A KP.sub.15 layer is preferred. They may also be insulated with a layer of a solid elemental pnictide, namely phosphorus, arsenic, antimony or bismuth applied by one of the above named processes. An elemental phosphorus layer is preferred. A silicon nitride, Si.sub.3 N.sub.4, layer may be added on top of the pnictide layer to increase the breakdown voltage of the insulating layer.
摘要翻译：金属绝缘体半导体器件利用富含pnictide的绝缘层在III-V半导体上形成。该层可以通过真空蒸发，溅射，化学气相沉积和液体熔融来施加。砷化镓，磷化铟和磷化镓衬底与碱金属高聚合物聚合物（优选多磷化物）绝缘，其具有式x x等于或大于15，包括在碱存在下生长的新形式的磷金属，其中x远大于15.KP15层是优选的。它们也可以用一层固体元素，即由上述任一方法之一施加的磷，砷，锑或铋来绝缘。元素磷层是优选的。氮化硅Si 3 N 4层可以添加到pnictide层的顶部以增加绝缘层的击穿电压。

3. 发明授权

US5247349A Passivation and insulation of III-V devices with pnictides, particularly amorphous pnictides having a layer-like structure 失效
标题翻译：具有层状结构的III-V器件的钝化和绝缘，特别是具有层状结构的非晶态聚合物
公开(公告)号：US5247349A
公开(公告)日：1993-09-21
申请号：US571033
申请日：1990-08-22
申请人： Diego J. Olego , John A. Baumann , Rozalie Schachter , Harvey B. Serreze , William E. Spicer , Paul M. Raccah
发明人： Diego J. Olego , John A. Baumann , Rozalie Schachter , Harvey B. Serreze , William E. Spicer , Paul M. Raccah
IPC分类号： C03C17/22 , H01L21/314 , H01L21/3205 , H01L23/29 , H01L23/31 , H01L29/24 , H01L29/51 , H01L31/032 , H01L51/05
CPC分类号： H01L23/3171 , C03C17/22 , H01L21/314 , H01L21/32051 , H01L23/291 , H01L29/24 , H01L29/51 , H01L31/032 , H01L2924/0002 , H01L2924/13063 , H01L51/0508 , H01L51/0512
摘要： Pnictide thin films, particularly phosphorus, grown on III-V semiconductors, particularly InP, GaP, and GaAs, are amorphous and have a novel layer-like, puckered sheet-like local order. The thin films are typically 400 Angstroms thick and grown preferably by molecular beam deposition, although other processes such as vacuum evaporation, sputtering, chemical vapor deposition, and deposition from a liquid melt may be used. The layers are grown on the , and surfaces of the III-V crystals. The pnictide layer reduces the density of surface states, and allows the depletion layer to be modulated, the surface barrier reduced, the electron concentration at the surface increased, and there is a decrease in the surface recombination velocity and an increase in the photoluminescence intensity. The layers may be utilized in MIS and Metal-semiconductor (Schottky) devices for example to insulate and passivate MISFETS, to passivate MESFETS, to reduce the surface current component of the reverse bias dark current in P-I-N and avalanche diodes, and to improve performance of opto-electronic devices such as light emitting diodes, lasers, solar cells, photo cathodes and photo detectors. The pnictide layer may be applied to intermetallic and compound semiconductors having a pnictide component. The pnictides may be phosphorus, arsenic, antimony or bismuth, or combinations thereof.
摘要翻译：在III-V族半导体，特别是InP，GaP和GaAs上生长的Pnictide薄膜，特别是磷是非晶态的，并且具有新颖的层状褶皱片状局部顺序。薄膜通常为400埃厚，优选通过分子束沉积生长，尽管可以使用诸如真空蒸发，溅射，化学气相沉积和来自液体熔融的沉积等其它工艺。这些层在<100> 110>和III-V晶体的表面上生长。第一层降低表面状态的密度，并且允许耗尽层被调制，表面阻挡减小，表面的电子浓度增加，并且表面复合速度降低，并且光致发光强度增加。这些层可以用于MIS和金属半导体（肖特基）器件中，例如绝缘和钝化MISFET，钝化MESFETS，以减少PIN和雪崩二极管中的反向偏置暗电流的表面电流分量，并且提高光电子器件如发光二极管，激光器，太阳能电池，光电阴极和光电探测器。可以将pnictide层应用于具有pnictide成分的金属间化合物和化合物半导体。磷化氢可以是磷，砷，锑或铋，或它们的组合。

4. 发明授权

US3961182A Pick up screens for X-ray image intensifier tubes employing evaporated activated scintillator layer 失效
标题翻译：拾取使用蒸发活化的闪烁体层的X射线图像增强管的屏幕
公开(公告)号：US3961182A
公开(公告)日：1976-06-01
申请号：US281905
申请日：1972-08-18
申请人： William E. Spicer
发明人： William E. Spicer
IPC分类号： G21K4/00 , H01J29/38 , H01J31/50
CPC分类号： G21K4/00 , H01J29/385 , H01J31/501
摘要： The present invention relates in general to methods for making pick-up screens for X-ray image intensifier tubes and, more particularly, to an improved method wherein the X-ray fluorescent phosphor screen element is formed by evaporation of an alkali metal halide material in vacuum and condensing the evaporated material on an X-ray transparent portion of the X-ray intensifier tube, whereby a curved X-ray image pick-up screen is formed which has improved quantum efficiency and resolution. Such improved X-ray image intensifier tubes are especially useful for, but not limited in use to, X-ray systems and for intensifying gamma ray images obtained in applications of nuclear medicine.
摘要翻译：本发明一般涉及用于制造用于X射线图像增强管的拾取屏幕的方法，更具体地，涉及一种改进的方法，其中通过将碱金属卤化物材料蒸发形成X射线荧光荧光屏元件在X射线增强管的X射线透明部分上真空并冷凝蒸发的材料，由此形成具有提高的量子效率和分辨率的弯曲X射线图像拾取屏幕。这种改进的X射线图像增强管对于X射线系统和用于增强在核医学应用中获得的伽马射线图像是特别有用的，但不限于此。

5. 发明授权

US4550460A Air brake slack adjustment and measurement tools 失效
标题翻译：空气制动松弛调节和测量工具
公开(公告)号：US4550460A
公开(公告)日：1985-11-05
申请号：US510549
申请日：1983-07-05
申请人： Henry C. Smallbrook , William E. Spicer
发明人： Henry C. Smallbrook , William E. Spicer
IPC分类号： B25B27/00 , B25F1/00 , B60T17/22
CPC分类号： B60T17/221 , B25B27/0035 , B25F1/00
摘要： Air brake adjustment and measurement tools where the adjustment tool includes a long handle portion having a gripper assembly attached to one end and a socket wrench drive attached to the other end. The gripper assembly has a pair of facing jaw members adapted to engage opposing edges of a vehicle's air brake slack adjustment. The measuring tool includes a scale, and a permanent magnet attached to one end of the scale. In use, the measuring tool is placed next to the clevis rod of the vehicle's air brake assembly, and the adjustment tool is used to move the air brake slack adjustment between a braking and a non-braking position. The stroke of the clevis rod is measured by the measuring tool, and is adjusted by a socket wrench attached to a socket drive of the adjustment tool.
摘要翻译：空气制动器调节和测量工具，其中调节工具包括具有附接到一端的夹持器组件的长柄部分和附接到另一端的套筒扳手驱动器。夹持器组件具有一对相对的钳口构件，其适于接合车辆的空气制动器松弛调节的相对边缘。测量工具包括一个刻度尺和一个连接在刻度尺一端的永磁体。在使用中，测量工具位于车辆空气制动器组件的U形夹杆旁边，调节工具用于在制动和非制动位置之间移动空气制动松弛调节。 U形夹杆的行程由测量工具测量，并通过安装在调节工具的插座驱动器上的套筒扳手进行调节。

6. 发明授权

US4421577A Method for making Schottky barrier diodes with engineered heights 失效
标题翻译：制造具有工程高度的肖特基势垒二极管的方法
公开(公告)号：US4421577A
公开(公告)日：1983-12-20
申请号：US205452
申请日：1980-11-10
申请人： William E. Spicer
发明人： William E. Spicer
IPC分类号： H01L21/285 , H01L21/26
CPC分类号： H01L21/28575 , H01L21/28581 , Y10S148/084
摘要： Schottky barrier diodes with engineered barrier heights in III-V semiconductor material are disclosed. By fabricating the diodes using a very clean and defect free surface, the barrier height can be controlled by introducing selected amounts of dopant in the surface prior to evaporation of a contact metal. By selecting a dopant having the same conductivity as the semiconductor material a reliable ohmic contact can be provided.
摘要翻译：公开了在III-V半导体材料中具有工程化阻挡高度的肖特基势垒二极管。通过使用非常干净和无缺陷的表面制造二极管，可以通过在接触金属蒸发之前在表面中引入选定量的掺杂剂来控制势垒高度。通过选择具有与半导体材料相同的导电性的掺杂剂可以提供可靠的欧姆接触。

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