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1. 发明授权

US08420529B2 Copper wiring surface protective liquid and method for manufacturing semiconductor circuit 有权
标题翻译：铜布线表面保护液及制造半导体电路的方法
公开(公告)号：US08420529B2
公开(公告)日：2013-04-16
申请号：US13119539
申请日：2009-09-02
申请人： Kenji Yamada , Kenji Shimada , Hiroshi Matsunaga
发明人： Kenji Yamada , Kenji Shimada , Hiroshi Matsunaga
IPC分类号： H01L21/28
CPC分类号： H01L21/321 , H01L21/02063 , H01L21/02074
摘要： A copper wiring material surface protective liquid for production of a semiconductor device is provided, containing an oxyalkylene adduct of an acetylenediol containing an acetylenediol having an oxyalkylene having 2 or 3 carbon atoms added thereto. A method for producing a semiconductor circuit device is provided, containing: forming an insulating film and/or a diffusion preventing film on a silicon substrate; then forming a copper film by a sputtering method; then forming a copper wiring containing 80% by mass or more of copper thereon by a plating method; and flattening the wiring by a chemical mechanical polishing (CMP) method, thereby providing a semiconductor substrate containing a copper wiring, the semiconductor substrate having an exposed surface of a copper wiring material being treated by making in contact with the copper wiring material surface protective liquid.
摘要翻译：提供一种用于制造半导体器件的铜布线材料表面保护液，其含有含有具有2或3个碳原子的氧化烯的乙炔二醇的乙炔二醇的氧化烯加成物。提供一种制造半导体电路器件的方法，包括：在硅衬底上形成绝缘膜和/或防扩散膜; 然后通过溅射法形成铜膜; 然后通过电镀法形成含有80质量％以上的铜的铜布线; 并通过化学机械抛光（CMP）方法使布线变平，从而提供含有铜布线的半导体基板，该半导体基板具有通过与铜布线材料表面保护液体接触来处理铜布线材料的暴露表面。

2. 发明申请

US20100197136A1 COMPOSITION FOR CLEANING AND RUST PREVENTION AND PROCESS FOR PRODUCING SEMICONDUCTOR ELEMENT OR DISPLAY ELEMENT 有权
标题翻译：用于生产半导体元件或显示元件的清洁和防腐组合物及其制造方法
公开(公告)号：US20100197136A1
公开(公告)日：2010-08-05
申请号：US12668695
申请日：2008-07-03
申请人： Kenji Shimada , Hiroshi Matsunaga , Kojiro Abe , Kenji Yamada
发明人： Kenji Shimada , Hiroshi Matsunaga , Kojiro Abe , Kenji Yamada
IPC分类号： H01L21/768 , C11D3/28 , G03F7/20 , H01L21/306
CPC分类号： C23G1/103 , C11D3/0073 , C11D3/28 , C11D3/33 , C11D7/10 , C11D7/265 , C11D7/3209 , C11D7/3245 , C11D7/3263 , C11D7/3281 , C11D11/0047 , C23G1/06 , H01L21/02063 , H01L21/02068
摘要： A composition for cleaning and corrosion inhibition which is used in a step of manufacturing a semiconductor device or a display device having a copper-containing metallic wiring is provided, wherein the corrosion inhibitor component is any one of pyrazole, a pyrazole derivative such as 3,5-dimethylpyrazole, a triazole derivative such as 1,2,4-triazole, an aminocarboxylic acid such as iminodiacetic acid or ethylenediaminedipropionic acid hydrochloride, or a disulfide compound such as diisopropyl disulfide or diethyl disulfide; and the cleaning agent component is any one of ammonium fluoride, tetramethylammonium fluoride, ammonium acetate, acetic acid, glyoxylic acid, oxalic acid, ascorbic acid, 1,2-diaminopropane or dimethylacetamide. Also, a method for manufacturing a semiconductor device or the like using the composition for cleaning and corrosion inhibition is provided.
摘要翻译：提供了用于制造半导体器件或具有含铜金属布线的显示器件的步骤中用于清洁和腐蚀抑制的组合物，其中所述腐蚀抑制剂成分是吡唑，吡唑衍生物如3，咪唑衍生物如1,2,4-三唑，氨基羧酸如亚氨基二乙酸或乙二胺二丙酸盐酸盐，或二硫化物化合物如二异丙基二硫化物或二乙基二硫醚; 清洗剂成分为氟化铵，四甲基氟化铵，乙酸铵，乙酸，乙醛酸，草酸，抗坏血酸，1,2-二氨基丙烷或二甲基乙酰胺中的任一种。另外，提供了使用该清洗抑制组合物制造半导体装置等的方法。

3. 发明授权

US08859411B2 Method for producing transistor 有权
标题翻译：晶体管的制造方法
公开(公告)号：US08859411B2
公开(公告)日：2014-10-14
申请号：US13817699
申请日：2011-07-26
申请人： Kenji Shimada , Hiroshi Matsunaga , Kojiro Abe , Kenji Yamada
发明人： Kenji Shimada , Hiroshi Matsunaga , Kojiro Abe , Kenji Yamada
IPC分类号： H01L29/76 , H01L21/28 , C09K13/08 , H01L21/8238 , H01L21/02 , H01L21/8234 , H01L29/66 , H01L21/311 , H01L29/40 , H01L21/3213 , C09K13/06
CPC分类号： H01L29/401 , C09K13/06 , C09K13/08 , H01L21/02068 , H01L21/28079 , H01L21/31111 , H01L21/32134 , H01L21/82345 , H01L21/823842 , H01L29/66545
摘要： According to the present invention, there is provided a process for producing a transistor having a high precision and a high quality with a high yield by selectively etching a natural silicon oxide film, and further by selectively etching a dummy gate made of silicon. The present invention relates to a process for producing a transistor using a structural body which includes a substrate, and a dummy gate laminate formed by laminating at least a high dielectric material film and a dummy gate made of silicon having a natural silicon oxide film on a surface thereof, a side wall disposed to cover a side surface of the laminate and an interlayer insulating film disposed to cover the side wall which are provided on the substrate, said process including an etching step using a specific etching solution and thereby replacing the dummy gate with an aluminum metal gate.
摘要翻译：根据本发明，通过选择性地蚀刻天然氧化硅膜，并且进一步通过选择性地蚀刻由硅制成的虚拟栅极，提供了以高产率制造具有高精度和高质量的晶体管的方法。本发明涉及一种使用包括基板的结构体制造晶体管的方法，以及通过将至少具有高介电材料膜和由硅制成的具有天然氧化硅膜的虚拟栅极层叠在一起而形成的虚拟栅极叠层表面，设置成覆盖层压体的侧表面的侧壁和设置成覆盖设置在基板上的侧壁的层间绝缘膜，所述工艺包括使用特定蚀刻溶液的蚀刻步骤，从而替换伪栅极与铝金属门。

4. 发明申请

US20130196497A1 METHOD FOR PRODUCING TRANSISTOR 有权
标题翻译：生产晶体管的方法
公开(公告)号：US20130196497A1
公开(公告)日：2013-08-01
申请号：US13817699
申请日：2011-07-26
申请人： Kenji Shimada , Hiroshi Matsunaga , Kojiro Abe , Kenji Yamada
发明人： Kenji Shimada , Hiroshi Matsunaga , Kojiro Abe , Kenji Yamada
IPC分类号： H01L29/40
CPC分类号： H01L29/401 , C09K13/06 , C09K13/08 , H01L21/02068 , H01L21/28079 , H01L21/31111 , H01L21/32134 , H01L21/82345 , H01L21/823842 , H01L29/66545
摘要： According to the present invention, there is provided a process for producing a transistor having a high precision and a high quality with a high yield by selectively etching a natural silicon oxide film, and further by selectively etching a dummy gate made of silicon. The present invention relates to a process for producing a transistor using a structural body which includes a substrate, and a dummy gate laminate formed by laminating at least a high dielectric material film and a dummy gate made of silicon having a natural silicon oxide film on a surface thereof, a side wall disposed to cover a side surface of the laminate and an interlayer insulating film disposed to cover the side wall which are provided on the substrate, said process including an etching step using a specific etching solution and thereby replacing the dummy gate with an aluminum metal gate.
摘要翻译：根据本发明，通过选择性地蚀刻天然氧化硅膜，并且进一步通过选择性地蚀刻由硅制成的虚拟栅极，提供了以高产率制造具有高精度和高质量的晶体管的方法。本发明涉及一种使用包括基板的结构体制造晶体管的方法，以及通过将至少具有高介电材料膜和由硅制成的具有天然氧化硅膜的虚拟栅极层叠在一起而形成的虚拟栅极叠层表面，设置成覆盖层压体的侧表面的侧壁和设置成覆盖设置在基板上的侧壁的层间绝缘膜，所述工艺包括使用特定蚀刻溶液的蚀刻步骤，从而替换伪栅极与铝金属门。

5. 发明申请

US20110212617A1 LIQUID FOR PROTECTING COPPER WIRING SURFACE AND METHOD FOR MANUFACTURING SEMICONDUCTOR CIRCUIT ELEMENT 有权
标题翻译：用于保护铜线表面的液体和制造半导体电路元件的方法
公开(公告)号：US20110212617A1
公开(公告)日：2011-09-01
申请号：US13062365
申请日：2009-09-02
申请人： Kenji Yamada , Kenji Shimada , Hiroshi Matsunaga
发明人： Kenji Yamada , Kenji Shimada , Hiroshi Matsunaga
IPC分类号： H01L21/28 , C09D7/00
CPC分类号： H01L21/321 , H01L21/02074
摘要： A copper wiring material surface protective liquid is provided that is used in production of a semiconductor circuit device containing copper wiring, and consists of an aqueous solvent and an acetylene alcohol compound containing at least 3-phenyl-2-propyn-1-ol. A method for producing a semiconductor circuit device is provided that contains: forming an insulating film and/or a diffusion preventing film on a silicon substrate; then forming a copper film by a sputtering; then forming a copper film or a copper alloy film containing 80% by mass or more of copper thereon by a plating method; and flattening the film by a chemical mechanical polishing (CMP) method, thereby providing a semiconductor substrate containing a flattened copper wiring, in which the semiconductor substrate having an exposed surface of a copper wiring material is treated by making in contact with the copper wiring material surface protective liquid.
摘要翻译：提供铜线材料表面保护液，其用于生产含有铜布线的半导体电路器件，并由含水溶剂和至少含有3-苯基-2-丙炔-1-醇的乙炔醇化合物组成。提供一种制造半导体电路器件的方法，其包括：在硅衬底上形成绝缘膜和/或防扩散膜; 然后通过溅射形成铜膜; 然后通过电镀法形成含有80质量％以上的铜的铜膜或铜合金膜; 并通过化学机械抛光（CMP）方法使膜平坦化，从而提供含有扁平铜布线的半导体基板，其中通过与铜布线材料接触来处理具有铜布线材料的暴露表面的半导体基板表面保护液。

6. 发明授权

US08420538B2 Liquid for protecting copper wiring surface and method for manufacturing semiconductor circuit element 有权
标题翻译：用于保护铜布线表面的液体和用于制造半导体电路元件的方法
公开(公告)号：US08420538B2
公开(公告)日：2013-04-16
申请号：US13062365
申请日：2009-09-02
申请人： Kenji Yamada , Kenji Shimada , Hiroshi Matsunaga
发明人： Kenji Yamada , Kenji Shimada , Hiroshi Matsunaga
IPC分类号： H01L21/302 , H01L21/44 , C23F11/00 , C09K15/00
CPC分类号： H01L21/321 , H01L21/02074
摘要： A copper wiring material surface protective liquid is provided that is used in production of a semiconductor circuit device containing copper wiring, and consists of an aqueous solvent and an acetylene alcohol compound containing at least 3-phenyl-2-propyn-1-ol. A method for producing a semiconductor circuit device is provided that contains: forming an insulating film and/or a diffusion preventing film on a silicon substrate; then forming a copper film by a sputtering; then forming a copper film or a copper alloy film containing 80% by mass or more of copper thereon by a plating method; and flattening the film by a chemical mechanical polishing (CMP) method, thereby providing a semiconductor substrate containing a flattened copper wiring, in which the semiconductor substrate having an exposed surface of a copper wiring material is treated by making in contact with the copper wiring material surface protective liquid.
摘要翻译：提供铜线材料表面保护液，其用于生产含有铜布线的半导体电路器件，并由含水溶剂和至少含有3-苯基-2-丙炔-1-醇的乙炔醇化合物组成。提供一种制造半导体电路器件的方法，其包括：在硅衬底上形成绝缘膜和/或防扩散膜; 然后通过溅射形成铜膜; 然后通过电镀法形成含有80质量％以上的铜的铜膜或铜合金膜; 并通过化学机械抛光（CMP）方法使膜平坦化，从而提供含有扁平铜布线的半导体基板，其中通过与铜布线材料接触来处理具有铜布线材料的暴露表面的半导体基板表面保护液。

7. 发明授权

US08802608B2 Composition for cleaning and rust prevention and process for producing semiconductor element or display element 有权
标题翻译：用于清洁和防锈的组合物以及用于制造半导体元件或显示元件的工艺
公开(公告)号：US08802608B2
公开(公告)日：2014-08-12
申请号：US12668695
申请日：2008-07-03
申请人： Kenji Shimada , Hiroshi Matsunaga , Kojiro Abe , Kenji Yamada
发明人： Kenji Shimada , Hiroshi Matsunaga , Kojiro Abe , Kenji Yamada
IPC分类号： C11D3/28 , H01L21/02 , C11D7/10 , C11D7/32 , C11D11/00 , C11D3/33 , C11D7/26 , C11D3/00 , C23G1/10 , C23G1/06
CPC分类号： C23G1/103 , C11D3/0073 , C11D3/28 , C11D3/33 , C11D7/10 , C11D7/265 , C11D7/3209 , C11D7/3245 , C11D7/3263 , C11D7/3281 , C11D11/0047 , C23G1/06 , H01L21/02063 , H01L21/02068
摘要： A composition for cleaning and corrosion inhibition which is used in a step of manufacturing a semiconductor device or a display device having a copper-containing metallic wiring is provided, wherein the corrosion inhibitor component is any one of pyrazole, a pyrazole derivative such as 3,5-dimethylpyrazole, a triazole derivative such as 1,2,4-triazole, an aminocarboxylic acid such as iminodiacetic acid or ethylenediaminedipropionic acid hydrochloride, or a disulfide compound such as diisopropyl disulfide or diethyl disulfide; and the cleaning agent component is any one of ammonium fluoride, tetramethylammonium fluoride, ammonium acetate, acetic acid, glyoxylic acid, oxalic acid, ascorbic acid, 1,2-diaminopropane or dimethylacetamide. Also, a method for manufacturing a semiconductor device or the like using the composition for cleaning and corrosion inhibition is provided.
摘要翻译：提供了用于制造半导体器件或具有含铜金属布线的显示器件的步骤中用于清洁和腐蚀抑制的组合物，其中所述腐蚀抑制剂成分是吡唑，吡唑衍生物如3，咪唑衍生物如1,2,4-三唑，氨基羧酸如亚氨基二乙酸或乙二胺二丙酸盐酸盐，或二硫化物化合物如二异丙基二硫化物或二乙基二硫醚; 清洗剂成分为氟化铵，四甲基氟化铵，乙酸铵，乙酸，乙醛酸，草酸，抗坏血酸，1,2-二氨基丙烷或二甲基乙酰胺中的任一种。另外，提供了使用该清洗抑制组合物制造半导体装置等的方法。

8. 发明申请

US20110237071A1 COPPER WIRING SURFACE PROTECTIVE LIQUID AND METHOD FOR MANUFACTURING SEMICONDUCTOR CIRCUIT 有权
标题翻译：铜接线表面保护液及制造半导体电路的方法
公开(公告)号：US20110237071A1
公开(公告)日：2011-09-29
申请号：US13119539
申请日：2009-09-02
申请人： Kenji Yamada , Kenji Shimada , Hiroshi Matsunaga
发明人： Kenji Yamada , Kenji Shimada , Hiroshi Matsunaga
IPC分类号： H01L21/768 , C07C31/20 , C09D7/12
CPC分类号： H01L21/321 , H01L21/02063 , H01L21/02074
摘要： A copper wiring material surface protective liquid for production of a semiconductor device is provided, containing an oxyalkylene adduct of an acetylenediol containing an acetylenediol having an oxyalkylene having 2 or 3 carbon atoms added thereto. A method for producing a semiconductor circuit device is provided, containing: forming an insulating film and/or a diffusion preventing film on a silicon substrate; then forming a copper film by a sputtering method; then forming a copper wiring containing 80% by mass or more of copper thereon by a plating method; and flattening the wiring by a chemical mechanical polishing (CMP) method, thereby providing a semiconductor substrate containing a copper wiring, the semiconductor substrate having an exposed surface of a copper wiring material being treated by making in contact with the copper wiring material surface protective liquid.
摘要翻译：提供一种用于制造半导体器件的铜布线材料表面保护液，其含有含有具有2或3个碳原子的氧化烯的乙炔二醇的乙炔二醇的氧化烯加成物。提供一种制造半导体电路器件的方法，包括：在硅衬底上形成绝缘膜和/或防扩散膜; 然后通过溅射法形成铜膜; 然后通过电镀法形成含有80质量％以上的铜的铜布线; 并通过化学机械抛光（CMP）方法使布线变平，从而提供含有铜布线的半导体基板，该半导体基板具有通过与铜布线材料表面保护液体接触来处理铜布线材料的暴露表面。

9. 发明申请

US20060040838A1 Cleaning liquid and cleaning method 有权
公开(公告)号：US20060040838A1
公开(公告)日：2006-02-23
申请号：US11202145
申请日：2005-08-12
申请人： Kenji Shimada , Kojiro Abe , Masaru Ohto , Hiroshi Matsunaga
发明人： Kenji Shimada , Kojiro Abe , Masaru Ohto , Hiroshi Matsunaga
IPC分类号： C11D7/32 , C23G1/00
CPC分类号： H01L21/02063 , C11D3/042 , C11D3/044 , C11D3/046 , C11D7/06 , C11D7/08 , C11D7/10 , C11D11/0047 , H01L21/31116 , H01L21/31138 , H01L21/32134 , H01L21/32138
摘要： A cleaning liquid is provided, which comprises an aqueous solution containing nitric acid, sulfuric acid, a fluorine compound, and a basic compound. The concentration of water in the cleaning liquid is 80% by weight or more, and the pH value of the cleaning liquid is from 1 to less than 3. The cleaning liquid is effective for removing etching residues formed in a dry etching process from semiconductor devices and display devices without oxidizing and corroding their metal wirings, particularly, copper wirings and the materials of insulating films.

10. 发明申请

US20130203263A1 SILICON ETCHANT AND METHOD FOR PRODUCING TRANSISTOR BY USING SAME 审中-公开
标题翻译：硅蚀刻剂及其制造方法
公开(公告)号：US20130203263A1
公开(公告)日：2013-08-08
申请号：US13819107
申请日：2011-07-26
申请人： Kenji Shimada , Hiroshi Matsunaga
发明人： Kenji Shimada , Hiroshi Matsunaga
IPC分类号： H01L21/306
CPC分类号： H01L21/30604 , H01L21/02068 , H01L21/32134 , H01L29/51 , H01L29/66545 , H01L29/78
摘要： According to the present invention, there is provided an etching solution used for selectively etching a dummy gate made of silicon in a process for producing a transistor including a laminate formed of at least a high dielectric material film and an aluminum metal gate by the method of removing the dummy gate made of silicon to replace the dummy gate with the aluminum metal gate, and a process for producing a transistor using the etching solution. The present invention relates to a silicon etching solution used for etching the dummy gate made of silicon which includes 0.1 to 40% by weight of at least one alkali compound selected from the group consisting of ammonia, a diamine and a polyamine represented by the general formula (1), 5 to 50% by weight of at least one polyhydric alcohol represented by the general formula (2) and 40 to 94.9% by weight of water, and a process for producing a transistor using the silicon etching solution.
摘要翻译：根据本发明，提供了一种用于在制造包括由至少高介电材料膜和铝金属栅极形成的层压体的晶体管的工艺中选择性地蚀刻由硅制成的虚拟栅极的蚀刻溶液，其方法为去除由硅制成的虚拟栅极以用铝金属栅极替代伪栅极，以及使用该蚀刻溶液制造晶体管的工艺。本发明涉及用于蚀刻由硅制成的虚拟栅极的硅蚀刻溶液，其包括0.1至40重量％的至少一种选自氨，二胺和由通式表示的多胺的碱金属化合物（1），5〜50重量％的由通式（2）表示的至少一种多元醇和40〜94.9重量％的水，以及使用硅蚀刻溶液制造晶体管的方法。

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