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1. 发明授权

US07572758B2 Cleaning liquid and cleaning method 有权
标题翻译：清洗液和清洗方法
公开(公告)号：US07572758B2
公开(公告)日：2009-08-11
申请号：US11202145
申请日：2005-08-12
申请人： Kenji Shimada , Kojiro Abe , Masaru Ohto , Hiroshi Matsunaga
发明人： Kenji Shimada , Kojiro Abe , Masaru Ohto , Hiroshi Matsunaga
IPC分类号： H01L21/02
CPC分类号： H01L21/02063 , C11D3/042 , C11D3/044 , C11D3/046 , C11D7/06 , C11D7/08 , C11D7/10 , C11D11/0047 , H01L21/31116 , H01L21/31138 , H01L21/32134 , H01L21/32138
摘要： A cleaning liquid is provided, which comprises an aqueous solution containing nitric acid, sulfuric acid, a fluorine compound, and a basic compound. The concentration of water in the cleaning liquid is 80% by weight or more, and the pH value of the cleaning liquid is from 1 to less than 3. The cleaning liquid is effective for removing etching residues formed in a dry etching process from semiconductor devices and display devices without oxidizing and corroding their metal wirings, particularly, copper wirings and the materials of insulating films.
摘要翻译：提供了包含含有硝酸，硫酸，氟化合物和碱性化合物的水溶液的清洗液。清洗液中的水的浓度为80重量％以上，清洗液的pH值为1〜3以下。清洗液对从半导体装置的干式蚀刻工序中形成的蚀刻残留物去除是有效的和显示装置，而不会氧化和腐蚀其金属布线，特别是铜布线和绝缘膜的材料。

2. 发明申请

US20060040838A1 Cleaning liquid and cleaning method 有权
公开(公告)号：US20060040838A1
公开(公告)日：2006-02-23
申请号：US11202145
申请日：2005-08-12
申请人： Kenji Shimada , Kojiro Abe , Masaru Ohto , Hiroshi Matsunaga
发明人： Kenji Shimada , Kojiro Abe , Masaru Ohto , Hiroshi Matsunaga
IPC分类号： C11D7/32 , C23G1/00
CPC分类号： H01L21/02063 , C11D3/042 , C11D3/044 , C11D3/046 , C11D7/06 , C11D7/08 , C11D7/10 , C11D11/0047 , H01L21/31116 , H01L21/31138 , H01L21/32134 , H01L21/32138
摘要： A cleaning liquid is provided, which comprises an aqueous solution containing nitric acid, sulfuric acid, a fluorine compound, and a basic compound. The concentration of water in the cleaning liquid is 80% by weight or more, and the pH value of the cleaning liquid is from 1 to less than 3. The cleaning liquid is effective for removing etching residues formed in a dry etching process from semiconductor devices and display devices without oxidizing and corroding their metal wirings, particularly, copper wirings and the materials of insulating films.

3. 发明申请

US20100216315A1 ETCHING COMPOSITION FOR METAL MATERIAL AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE BY USING SAME 有权
标题翻译：用于金属材料的蚀刻组合物及其制造半导体器件的方法
公开(公告)号：US20100216315A1
公开(公告)日：2010-08-26
申请号：US11917646
申请日：2006-06-22
申请人： Kazuyoshi Yaguchi , Kojiro Abe , Masaru Ohto
发明人： Kazuyoshi Yaguchi , Kojiro Abe , Masaru Ohto
IPC分类号： H01L21/306 , C09K13/04
CPC分类号： H01L21/32134 , C09K13/08 , C23F1/16 , C23F1/26 , H01L29/513 , H01L29/518
摘要： The invention provides an etchant composition employed for selectively etching a metallic material in production of a semiconductor device from an insulating material having high dielectric constant, an insulating material of silicon oxide film or silicon nitride film, and a metallic material, characterized in that the etchant composition is an aqueous solution containing a fluorine compound, and a chelating agent having, in the molecular structure thereof, a phosphorus oxo-acid as a functional group; or is an aqueous solution containing a fluorine compound, a chelating agent having, in the molecular structure thereof, a phosphorus oxo-acid as a functional group, and an inorganic acid and/or an organic acid. The invention also provides a method for producing a semiconductor device employing the etchant composition. According to the invention, a metallic material can be etched selectively and efficiently.
摘要翻译：本发明提供了一种蚀刻剂组合物，用于从具有高介电常数的绝缘材料，氧化硅膜或氮化硅膜的绝缘材料和金属材料中选择性地蚀刻半导体器件中的金属材料，其特征在于蚀刻剂组合物是含有氟化合物的水溶液和在其分子结构中具有作为官能团的含氧酸的螯合剂; 或者是含有氟化合物的水溶液，在分子结构中具有作为官能团的含氧酸的螯合剂，以及无机酸和/或有机酸。本发明还提供一种使用该蚀刻剂组合物制造半导体器件的方法。根据本发明，可以选择性且有效地蚀刻金属材料。

4. 发明授权

US08658053B2 Etching composition for metal material and method for manufacturing semiconductor device by using same 有权
标题翻译：金属材料的蚀刻组合物及其制造方法
公开(公告)号：US08658053B2
公开(公告)日：2014-02-25
申请号：US11917646
申请日：2006-06-22
申请人： Kazuyoshi Yaguchi , Kojiro Abe , Masaru Ohto
发明人： Kazuyoshi Yaguchi , Kojiro Abe , Masaru Ohto
IPC分类号： C09K13/08
CPC分类号： H01L21/32134 , C09K13/08 , C23F1/16 , C23F1/26 , H01L29/513 , H01L29/518
摘要： Disclosed is an etchant composition employed for selectively etching a metallic material in production of a semiconductor device, which is an aqueous solution containing a fluorine compound, and a chelating agent having, in the molecular structure thereof, a phosphorus oxo-acid as a functional group; or is an aqueous solution containing a fluorine compound, a chelating agent having, in the molecular structure thereof, a phosphorus oxo-acid as a functional group, and an inorganic acid and/or an organic acid. Also disclosed is a method for producing a semiconductor device employing the etchant composition.
摘要翻译：公开了用于选择性地蚀刻金属材料的蚀刻剂组合物，该半导体器件是含有氟化合物的水溶液，以及在其分子结构中具有作为官能团的磷氧基酸的螯合剂 ; 或者是含有氟化合物的水溶液，在分子结构中具有作为官能团的含氧酸的螯合剂，以及无机酸和/或有机酸。还公开了使用蚀刻剂组合物的半导体器件的制造方法。

5. 发明授权

US09334161B2 Processing liquid for suppressing pattern collapse of fine metal structure and method for producing fine metal structure using same 有权
标题翻译：用于抑制细金属结构的图案塌陷的处理液和使用其制造精细金属结构的方法
公开(公告)号：US09334161B2
公开(公告)日：2016-05-10
申请号：US13499462
申请日：2010-09-29
申请人： Masaru Ohto , Hiroshi Matsunaga , Kenji Yamada
发明人： Masaru Ohto , Hiroshi Matsunaga , Kenji Yamada
IPC分类号： H01B13/00 , B44C1/22 , B81C1/00 , C09K13/00 , C23G1/26 , H01L21/02
CPC分类号： B81C1/0092 , C09K13/00 , C23G1/26 , H01L21/02057
摘要： There are provided a processing liquid for suppressing pattern collapse of a fine metal structure, containing at least one member selected from an imidazolium halide having an alkyl group containing 12, 14 or 16 carbon atoms, a pyridinium halide having an alkyl group containing 14 or 16 carbon atoms, an ammonium halide having an alkyl group containing 14, 16 or 18 carbon atoms, a betaine compound having an alkyl group containing 12, 14 or 16 carbon atoms, and an amine oxide compound having an alkyl group containing 14, 16 or 18 carbon atoms, and a method for producing a fine metal structure using the same.
摘要翻译：提供了一种用于抑制精细金属结构的图案塌陷的处理液，其含有至少一种选自具有12,14或16个碳原子的烷基的咪唑卤化物，具有14或16个烷基的吡啶鎓卤化物碳原子，具有14,16或18个碳原子的烷基的卤化铵，具有12,14或16个碳原子的烷基的甜菜碱化合物和具有14,16或18个烷基的氧化胺化合物碳原子，以及使用其制造精细金属结构体的方法。

6. 发明申请

US20130165365A1 TREATMENT LIQUID FOR INHIBITING PATTERN COLLAPSE IN MICROSTRUCTURES, AND MICROSTRUCTURE MANUFACTURING METHOD USING SAID TREATMENT LIQUID 有权
标题翻译：用于抑制微结构中的图案皱纹的处理液和使用合适处理液的微结构制造方法
公开(公告)号：US20130165365A1
公开(公告)日：2013-06-27
申请号：US13820899
申请日：2011-07-14
申请人： Hiroshi Matsunaga , Masaru Ohto
发明人： Hiroshi Matsunaga , Masaru Ohto
IPC分类号： C11D7/32
CPC分类号： H01L21/0206 , B81C1/00825 , C11D7/3209 , C11D7/3281
摘要： There are provided a processing liquid for suppressing pattern collapse of a microstructure which includes at least one compound selected from the group consisting of an imidazolium halide containing an alkyl group having 12, 14 or 16 carbon atoms, a pyridinium halide containing an alkyl group having 14 or 16 carbon atoms and an ammonium halide containing an alkyl group having 16 or 18 carbon atoms, and water; and a method for producing a microstructure formed of silicon oxide using the processing liquid.
摘要翻译：提供了一种用于抑制显微组织的图案塌陷的处理液体，其包括至少一种选自包含具有12,14或16个碳原子的烷基的咪唑鎓卤化物的化合物，含有14个或16个碳原子和含有16或18个碳原子的烷基的卤化铵和水; 以及使用该处理液制造由氧化硅形成的微观结构的方法。

7. 发明授权

US08980812B2 Treatment liquid for inhibiting pattern collapse in microstructures, and microstructure manufacturing method using said treatment liquid 有权
标题翻译：用于抑制微结构中的图案塌陷的处理液，以及使用所述处理液的微结构制造方法
公开(公告)号：US08980812B2
公开(公告)日：2015-03-17
申请号：US13820899
申请日：2011-07-14
申请人： Hiroshi Matsunaga , Masaru Ohto
发明人： Hiroshi Matsunaga , Masaru Ohto
IPC分类号： C11D7/32 , H01L21/02 , B81C1/00
CPC分类号： H01L21/0206 , B81C1/00825 , C11D7/3209 , C11D7/3281
摘要： There are provided a processing liquid for suppressing pattern collapse of a microstructure which includes at least one compound selected from the group consisting of an imidazolium halide containing an alkyl group having 12, 14 or 16 carbon atoms, a pyridinium halide containing an alkyl group having 14 or 16 carbon atoms and an ammonium halide containing an alkyl group having 16 or 18 carbon atoms, and water; and a method for producing a microstructure formed of silicon oxide using the processing liquid.
摘要翻译：提供了一种用于抑制显微组织的图案塌陷的处理液体，其包括至少一种选自包含具有12,14或16个碳原子的烷基的咪唑鎓卤化物的化合物，含有14个或16个碳原子和含有16或18个碳原子的烷基的卤化铵和水; 以及使用该处理液制造由氧化硅形成的微观结构的方法。

8. 发明申请

US20120205345A1 TREATMENT SOLUTION FOR PREVENTING PATTERN COLLAPSE IN METAL FINE STRUCTURE BODY, AND PROCESS FOR PRODUCTION OF METAL FINE STRUCTURE BODY USING SAME 审中-公开
标题翻译：用于防止金属结构体中图案褶皱的处理方法及其使用金属结构体的生产工艺
公开(公告)号：US20120205345A1
公开(公告)日：2012-08-16
申请号：US13503055
申请日：2010-10-19
申请人： Masaru Ohto , Hiroshi Matsunaga , Kenji Yamada
发明人： Masaru Ohto , Hiroshi Matsunaga , Kenji Yamada
IPC分类号： C23F1/00 , C11D3/20
CPC分类号： H01L21/02057 , B81B2203/0109 , B81B2203/0361 , B81C1/00849 , H01L21/31111
摘要： There are provided a processing liquid for suppressing pattern collapse of a fine metal structure, containing a pattern collapse suppressing agent that has a hydrocarbyl group containing any one of an alkyl group and an alkenyl group, both of which may be substituted partly or entirely by a fluorine atom, and contains an oxyethylene structure, and a method for producing a fine metal structure using the same.
摘要翻译：提供了一种用于抑制细金属结构的图案塌陷的处理液，其含有具有含有烷基和烯基中的任何一个的烃基的图案塌陷抑制剂，它们都可部分或全部被氟原子，并且含有氧化乙烯结构体，以及使用其制造精细金属结构体的方法。

9. 发明申请

US20120181249A1 PROCESSING LIQUID FOR SUPPRESSING PATTERN COLLAPSE OF FINE METAL STRUCTURE AND METHOD FOR PRODUCING FINE METAL STRUCTURE USING SAME 有权
标题翻译：用于抑制精细金属结构的图案的处理液和使用其制造精细金属结构的方法
公开(公告)号：US20120181249A1
公开(公告)日：2012-07-19
申请号：US13499462
申请日：2010-09-29
申请人： Masaru Ohto , Hiroshi Matsunaga , Kenji Yamada
发明人： Masaru Ohto , Hiroshi Matsunaga , Kenji Yamada
IPC分类号： H01L21/306 , C23F1/14 , G03F7/42 , C23F1/12
CPC分类号： B81C1/0092 , C09K13/00 , C23G1/26 , H01L21/02057
摘要： There are provided a processing liquid for suppressing pattern collapse of a fine metal structure, containing at least one member selected from an imidazolium halide having an alkyl group containing 12, 14 or 16 carbon atoms, a pyridinium halide having an alkyl group containing 14 or 16 carbon atoms, an ammonium halide having an alkyl group containing 14, 16 or 18 carbon atoms, a betaine compound having an alkyl group containing 12, 14 or 16 carbon atoms, and an amine oxide compound having an alkyl group containing 14, 16 or 18 carbon atoms, and a method for producing a fine metal structure using the same.
摘要翻译：提供了一种用于抑制精细金属结构的图案塌陷的处理液，其含有至少一种选自具有12,14或16个碳原子的烷基的咪唑卤化物，具有14或16个烷基的吡啶鎓卤化物碳原子，具有14,16或18个碳原子的烷基的卤化铵，具有12,14或16个碳原子的烷基的甜菜碱化合物和具有14,16或18个烷基的氧化胺化合物碳原子，以及使用其制造精细金属结构体的方法。

10. 发明申请

US20120135604A1 PROCESSING LIQUID FOR SUPPRESSING PATTERN COLLAPSE OF FINE METAL STRUCTURE, AND METHOD FOR PRODUCING FINE METAL STRUCTURE USING SAME 有权
标题翻译：用于抑制精细金属结构的图案的处理液和使用其制造精细金属结构的方法
公开(公告)号：US20120135604A1
公开(公告)日：2012-05-31
申请号：US13388462
申请日：2010-07-21
申请人： Masaru Ohto , Hiroshi Matsunaga , Kenji Yamada
发明人： Masaru Ohto , Hiroshi Matsunaga , Kenji Yamada
IPC分类号： H01L21/306 , C09K3/00 , C07F9/09
CPC分类号： H01L21/02057 , B81C1/00928
摘要： There are provided a processing liquid that is capable of suppressing pattern collapse of a fine metal structure, such as a semiconductor device and a micromachine, and a method for producing a fine metal structure using the same. The processing liquid for suppressing pattern collapse of a fine metal structure, contains a phosphate ester and/or a polyoxyalkylene ether phosphate ester, and the method for producing a fine metal structure, uses the same.
摘要翻译：提供了能够抑制诸如半导体器件和微机械的精细金属结构的图案崩溃的处理液以及使用其的精细金属结构的制造方法。用于抑制细金属结构的图案塌陷的处理液含有磷酸酯和/或聚氧化烯醚磷酸酯，以及精细金属结构体的制造方法。

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