专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06740416B1 Aerogel substrate and method for preparing the same 有权
标题翻译：气凝胶底物及其制备方法
公开(公告)号：US06740416B1
公开(公告)日：2004-05-25
申请号：US09830572
申请日：2001-05-08
申请人： Hiroshi Yokogawa , Masaru Yokoyama , Kenji Tsubaki , Kenji Kawano , Kenji Sonoda
发明人： Hiroshi Yokogawa , Masaru Yokoyama , Kenji Tsubaki , Kenji Kawano , Kenji Sonoda
IPC分类号： B32B1304
CPC分类号： C23C16/045 , B05D1/202 , C03C17/34 , C03C17/3411 , C03C17/3417 , C03C17/36 , C03C17/42 , C03C2217/75 , C03C2217/76 , C03C2218/32 , C23C14/046 , C23C14/06 , G02B6/02042 , G02B6/122 , H01L33/005 , H01L33/0066 , H01L33/0079 , H01L51/5262 , H05K1/0306 , Y10S428/913 , Y10T428/24917
摘要： An aerogel substrate useful for an electrically conductive substrate, a heat insulating substrate, an optical waveguide substrate, a substrate for a light emitting device or a light emitting device is provided. The aerogel substrate is characterized by comprising a functional layer and an aerogel layer, and an intermediate layer formed between the functional layer and the aerogel layer to allow the functional layer to be formed uniformly thereon. The intermediate layer is formed on at least one surface of the aerogel layer by a gas phase method, by the Langmuir-Blodgett method or by adsorption of an inorganic layered compound; or formed by a hydrophilicizing treatment of at least one surface of the aerogel layer followed by coating and drying an aqueous coating fluid, by an annealing treatment of at least one surface of the aerogel layer, or by a hydrophilicizing treatment of at least one surface of the aerogel layer.
摘要翻译：提供了可用于导电基板，隔热基板，光波导基板，发光器件用基板或发光元件的气凝胶基板。气凝胶基板的特征在于，具有功能层和气凝胶层，以及形成在功能层和气凝胶层之间的中间层，以使功能层均匀地形成。中间层通过气相法，Langmuir-Blodgett法或通过无机层状化合物的吸附形成在气凝胶层的至少一个表面上; 或通过对气凝胶层的至少一个表面进行亲水化处理，然后通过涂覆和干燥水性涂布液，通过对气凝胶层的至少一个表面的退火处理，或通过亲水化处理至少一个表面气凝胶层。

2. 发明授权

US6154595A Side-face illuminating optical fiber 失效
标题翻译：侧面照明光纤
公开(公告)号：US6154595A
公开(公告)日：2000-11-28
申请号：US113507
申请日：1998-07-10
申请人： Hiroshi Yokogawa , Masaru Yokoyama , Kenji Tsubaki , Kenji Sonoda , Keishi Kousaka , Mikio Sei , Nobuaki Yabunouchi
发明人： Hiroshi Yokogawa , Masaru Yokoyama , Kenji Tsubaki , Kenji Sonoda , Keishi Kousaka , Mikio Sei , Nobuaki Yabunouchi
IPC分类号： F21V8/00 , G02B6/00 , G02B6/02 , G02B6/22
CPC分类号： G02B6/02033 , G02B6/001 , G02B6/0001 , G02B6/02395
摘要： A side-face illuminating optical fiber comprising a core 1 transmitting therethrough light entering from an incident end of the optical fiber, a cladding 2 made of silica aerogel which covers an outer peripheral surface of the core, a transparent coating layer 3 which covers an outer periphery of the cladding, and an illuminating portion formed at least in a part of an interface between the core and the cladding. The light transmitting though said core radiates through the illuminating portion to the cladding.
摘要翻译：一种侧面照明光纤，包括从光纤入射端透射的光的芯1，覆盖芯的外周表面的由二氧化硅气凝胶制成的包层2，覆盖外部的透明涂层3 并且至少形成在芯和包层之间的界面的一部分中的照明部分。通过所述芯透射的光通过照明部分辐射到包层。

3. 发明授权

US5790742A Optical fiber 失效
标题翻译：光纤
公开(公告)号：US5790742A
公开(公告)日：1998-08-04
申请号：US723246
申请日：1996-09-30
申请人： Kenji Tsubaki , Tsuneyoshi Kamae , Hiroshi Yokogawa , Masaru Yokoyama , Kenji Sonoda
发明人： Kenji Tsubaki , Tsuneyoshi Kamae , Hiroshi Yokogawa , Masaru Yokoyama , Kenji Sonoda
IPC分类号： C03B37/012 , C03B37/016 , C03C13/04 , G02B6/02 , G02B6/00
CPC分类号： C03C13/045 , C03B37/0128 , C03B37/016 , G02B6/02033 , C03B2201/02
摘要： An optical fiber comprises a core 1 extending in a longitudinal direction and a cladding 3 of silica aerogel preferably having a hydrophobic property to provide a high optical transmission efficiency. The silica aerogel of the cladding is prepared by polymerizing a hydrolyzed alkoxysilane before a supercritical drying treatment and is subjected to a hydrophobic treatment before or during the supercritical drying.
摘要翻译：光纤包括沿纵向方向延伸的芯部1和优选具有疏水性的二氧化硅气凝胶包层3以提供高的光传输效率。包层的二氧化硅气凝胶通过在超临界干燥处理之前聚合水解的烷氧基硅烷并在超临界干燥之前或期间进行疏水处理来制备。

4. 发明授权

US06197270B1 Process for producing aerogel 失效
标题翻译：生产气凝胶的方法
公开(公告)号：US06197270B1
公开(公告)日：2001-03-06
申请号：US08976080
申请日：1997-11-21
申请人： Kenji Sonoda , Hiroshi Yokogawa , Masaru Yokoyama , Kenji Tsubaki
发明人： Kenji Sonoda , Hiroshi Yokogawa , Masaru Yokoyama , Kenji Tsubaki
IPC分类号： C01B33146
CPC分类号： C01B33/1585
摘要： There is provided a process for producing an aerogel which comprises lowering a pH of a water glass solution to obtain a sol, gelling the sol to obtain a hydrogel, replacing water in the gel with an organic solvent, reacting the gel with a hydrophobilizing agent having hydrophobic groups as well as functional groups reactive with silanol groups in liquid phase, followed by supercritically drying; or hydrophobilizing and supercritically drying the resultant gel at the same time. Preferably, the hydrogel is prepared by ion exchanging alkali metals in the water glass solution using an ion exchange resin to obtain a sol which is subjected to suspension polymerization.
摘要翻译：提供了一种制备气凝胶的方法，其包括降低水玻璃溶液的pH以获得溶胶，胶凝溶胶以获得水凝胶，用有机溶剂代替凝胶中的水，使凝胶与疏水化剂反应，所述疏水化剂具有疏水基团以及与液相中的硅烷醇基反应的官能团，然后进行超临界干燥; 或同时疏水化和超临界干燥所得凝胶。优选地，水凝胶通过使用离子交换树脂在水玻璃溶液中离子交换碱金属来制备，以获得进行悬浮聚合的溶胶。

5. 发明授权

US06762553B1 Substrate for light emitting device, light emitting device and process for production of light emitting device 有权
标题翻译：发光元件用基板，发光元件及发光元件的制造方法
公开(公告)号：US06762553B1
公开(公告)日：2004-07-13
申请号：US09708657
申请日：2000-11-09
申请人： Hiroshi Yokogawa , Tetsuo Tsutsui , Masaru Yokoyama , Kenji Tsubaki , Kenji Kawano
发明人： Hiroshi Yokogawa , Tetsuo Tsutsui , Masaru Yokoyama , Kenji Tsubaki , Kenji Kawano
IPC分类号： H01J162
CPC分类号： H01L51/5262 , H01L51/524
摘要： There is provided a substrate for a light emitting device which includes an electrically conductive and transparent film which is in contact with a surface of a low refractive index member of which refractive index is greater than 1 and not greater than 1.30. In a preferable embodiment, the substrate further comprises a transparent member on its surface which is opposed to its surface which has the electrically conductive and transparent film. There is further provided a light emitting device which includes such substrate and a luminous layer, and the luminous layer is located on the electrically conductive and transparent film. With such light emitting device, a ratio of light which is withdrawn outside through the low refractive index member is increased, so that a coupling-out efficiency for surface emission of light withdrawn into the ambient air is increased.
摘要翻译：提供了一种用于发光器件的衬底，其包括导电和透明膜，其与折射率大于1且不大于1.30的低折射率构件的表面接触。在优选实施例中，基板还包括在其表面上与其表面相对的透明构件，该表面具有导电和透明膜。还提供了一种发光器件，其包括这种衬底和发光层，并且发光层位于导电和透明膜上。通过这种发光器件，通过低折射率从外部引出的光的比例成员增加，从而提高了排出到周围空气中的光的表面发射的耦合效率。

6. 发明授权

US08934703B2 Determination assist system of ultrasonic testing, determination assist method of ultrasonic testing, determination assist program of ultrasonic testing, and computer-readable storage medium for storing determination assist program of ultrasonic testing 有权
标题翻译：超声波测试确定辅助系统，超声波测试确定辅助方法，超声波测试确定辅助程序以及用于存储超声波测试确定辅助程序的计算机可读存储介质
公开(公告)号：US08934703B2
公开(公告)日：2015-01-13
申请号：US13497201
申请日：2010-10-04
申请人： Kenji Tsubaki , Katsumi Nagata , Toshihiro Yamaoka , Hideyuki Hirasawa , Hironori Okauchi
发明人： Kenji Tsubaki , Katsumi Nagata , Toshihiro Yamaoka , Hideyuki Hirasawa , Hironori Okauchi
IPC分类号： G06K9/00 , G01N29/06 , G01N29/44
CPC分类号： G01N29/0654 , G01N29/11 , G01N29/4427 , G01N2291/023 , G01N2291/028
摘要： A determination assist system including a first image generating section for generating a first planar image based on data of a first test index; a second image generating section for generating a second planar image based on data of a second test index; a differentiation section which differentiates the first planar image and the second planar image to generate a first differential image and a second differential image, respectively; a binarization section which binarizes the first differential image to generate a first binary image including a first region which is not less than a first threshold and a second region which is less than the first threshold, and binarizes the second differential image to generate a second binary image including a third region which is not less than a second threshold and a fourth region which is less than the second threshold; and a determination image generating section.
摘要翻译：确定辅助系统，包括：第一图像生成部，用于基于第一测试索引的数据生成第一平面图像; 第二图像生成部，其基于第二测试索引的数据生成第二平面图像; 微分部分，其分别使第一平面图像和第二平面图像分别产生第一差分图像和第二差分图像; 二值化部分，其将所述第一差分图像二值化以生成包括不小于第一阈值的第一区域和小于所述第一阈值的第二区域的第一二进制图像，并且将所述第二差分图像二值化以生成第二二进制图像图像，包括不小于第二阈值的第三区域和小于所述第二阈值的第四区域; 以及确定图像生成部。

7. 发明申请

US20140209857A1 METHOD OF MANUFACTURE FOR NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT, WAFER, AND NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT 有权
标题翻译：硝基半导体发光元件，波长和氮化物半导体发光元件的制造方法
公开(公告)号：US20140209857A1
公开(公告)日：2014-07-31
申请号：US14130345
申请日：2012-07-05
申请人： Takayoshi Takano , Takuya Mino , Norimichi Noguchi , Kenji Tsubaki , Hideki Hirayama
发明人： Takayoshi Takano , Takuya Mino , Norimichi Noguchi , Kenji Tsubaki , Hideki Hirayama
IPC分类号： H01L33/12 , H01L33/06 , H01L33/00
CPC分类号： H01L33/06 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/0262 , H01L21/02661 , H01L33/007 , H01L33/0075 , H01L33/12 , H01L33/32
摘要： In a method of manufacture for a nitride semiconductor light emitting element including: a monocrystalline substrate; and an AlN layer; and a first nitride semiconductor layer of a first electrical conductivity type; and a light emitting layer made of an AlGaN-based material; and a second nitride semiconductor layer of a second electrical conductivity type, a step of forming the AlN layer includes: a first step of supplying an Al source gas and a N source gas into the reactor to generate a group of MN crystal nuclei having Al-polarity to be a part of the AlN layer on the surface of the monocrystalline substrate; and a second step of supplying the Al source gas and the N source gas into the reactor to form the AlN layer, after the first step.
摘要翻译：一种氮化物半导体发光元件的制造方法，包括：单晶基板; 和AlN层; 和第一导电类型的第一氮化物半导体层; 和由AlGaN基材料制成的发光层; 以及第二导电型的第二氮化物半导体层，形成所述AlN层的步骤包括：向所述反应器供给Al源气体和N源气体以产生具有Al- 极性是单晶衬底表面上的AlN层的一部分; 以及在第一步骤之后将Al源气体和N源气体供应到反应器中以形成AlN层的第二步骤。

8. 发明申请

US20130082297A1 ULTRAVIOLET SEMICONDUCTOR LIGHT-EMITTING ELEMENT 有权
标题翻译： ULTRAVIOLET半导体发光元件
公开(公告)号：US20130082297A1
公开(公告)日：2013-04-04
申请号：US13704679
申请日：2011-06-17
申请人： Norimichi Noguchi , Kenji Tsubaki , Takayoshi Takano
发明人： Norimichi Noguchi , Kenji Tsubaki , Takayoshi Takano
IPC分类号： H01L33/60
CPC分类号： H01L33/60 , H01L33/20 , H01L33/38 , H01L33/46
摘要： An ultraviolet semiconductor light-emitting element comprises a light-emitting layer which is arranged between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer, an n-electrode that is in contact with the n-type nitride semiconductor layer, and a p-electrode that is in contact with the p-type nitride semiconductor layer. The p-type nitride semiconductor layer is provided with a p-type contact layer that has a band gap smaller than that of the light-emitting layer and is in ohmic contact with the p-electrode. A depressed part is formed in a reverse side surface of a surface of the p-type nitride semiconductor layer that faces the light-emitting layer so as to avoid a formation region on which the p-electrode is formed. A reflective film that reflects ultraviolet light emitted from the light-emitting layer is formed on an inner bottom surface of the depressed part.
摘要翻译：紫外线半导体发光元件包括布置在n型氮化物半导体层和p型氮化物半导体层之间的发光层，与n型氮化物半导体层接触的n电极，以及与p型氮化物半导体层接触的p电极。 p型氮化物半导体层具有p型接触层，该p型接触层的带隙比发光层的带隙小，与p电极欧姆接触。在p型氮化物半导体层的面向发光层的表面的背面形成凹部，以避免形成有p电极的形成区域。在凹陷部的内底面形成反射从发光层发出的紫外线的反射膜。

9. 发明授权

US09293646B2 Method of manufacture for nitride semiconductor light emitting element, wafer, and nitride semiconductor light emitting element 有权
标题翻译：氮化物半导体发光元件，晶片和氮化物半导体发光元件的制造方法
公开(公告)号：US09293646B2
公开(公告)日：2016-03-22
申请号：US14130345
申请日：2012-07-05
申请人： Takayoshi Takano , Takuya Mino , Norimichi Noguchi , Kenji Tsubaki , Hideki Hirayama
发明人： Takayoshi Takano , Takuya Mino , Norimichi Noguchi , Kenji Tsubaki , Hideki Hirayama
IPC分类号： H01L21/00 , H01L33/06 , H01L33/00 , H01L33/12 , H01L21/02 , H01L33/32
CPC分类号： H01L33/06 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/0262 , H01L21/02661 , H01L33/007 , H01L33/0075 , H01L33/12 , H01L33/32
摘要： In a method of manufacture for a nitride semiconductor light emitting element including: a monocrystalline substrate; and an AlN layer; and a first nitride semiconductor layer of a first electrical conductivity type; and a light emitting layer made of an AlGaN-based material; and a second nitride semiconductor layer of a second electrical conductivity type, a step of forming the AlN layer includes: a first step of supplying an Al source gas and a N source gas into the reactor to generate a group of AlN crystal nuclei having Al-polarity to be a part of the AlN layer on the surface of the monocrystalline substrate; and a second step of supplying the Al source gas and the N source gas into the reactor to form the AlN layer, after the first step.
摘要翻译：一种氮化物半导体发光元件的制造方法，包括：单晶基板; 和AlN层; 和第一导电类型的第一氮化物半导体层; 和由AlGaN基材料制成的发光层; 以及第二导电型的第二氮化物半导体层，形成所述AlN层的步骤包括：向所述反应器供给Al源气体和N源气体的第一工序，生成具有Al- 极性是单晶衬底表面上的AlN层的一部分; 以及在第一步骤之后将Al源气体和N源气体供应到反应器中以形成AlN层的第二步骤。

10. 发明授权

US09070847B2 Ultraviolet semiconductor light-emitting element that emits ultraviolet light from one surface side 有权
标题翻译：从一个表面侧发射紫外光的紫外线半导体发光元件
公开(公告)号：US09070847B2
公开(公告)日：2015-06-30
申请号：US13704679
申请日：2011-06-17
申请人： Norimichi Noguchi , Kenji Tsubaki , Takayoshi Takano
发明人： Norimichi Noguchi , Kenji Tsubaki , Takayoshi Takano
IPC分类号： H01L33/00 , H01L27/15 , H01L31/12 , H01L31/062 , H01L31/113 , H01L23/48 , H01L23/52 , H01L29/40 , H01L33/60 , H01L33/20 , H01L33/46 , H01L33/38
CPC分类号： H01L33/60 , H01L33/20 , H01L33/38 , H01L33/46
摘要： An ultraviolet semiconductor light-emitting element comprises a light-emitting layer which is arranged between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer, an n-electrode that is in contact with the n-type nitride semiconductor layer, and a p-electrode that is in contact with the p-type nitride semiconductor layer. The p-type nitride semiconductor layer is provided with a p-type contact layer that has a band gap smaller than that of the light-emitting layer and is in ohmic contact with the p-electrode. A depressed part is formed in a reverse side surface of a surface of the p-type nitride semiconductor layer that faces the light-emitting layer so as to avoid a formation region on which the p-electrode is formed. A reflective film that reflects ultraviolet light emitted from the light-emitting layer is formed on an inner bottom surface of the depressed part.
摘要翻译：紫外线半导体发光元件包括布置在n型氮化物半导体层和p型氮化物半导体层之间的发光层，与n型氮化物半导体层接触的n电极，以及与p型氮化物半导体层接触的p电极。 p型氮化物半导体层具有p型接触层，该p型接触层的带隙比发光层的带隙小，与p电极欧姆接触。在p型氮化物半导体层的面向发光层的表面的背面形成凹部，以避免形成有p电极的形成区域。在凹陷部的内底面形成反射从发光层发出的紫外线的反射膜。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式