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1. 发明授权

US08310136B2 Piezoelectric thin film element, and piezoelectric thin film device 有权
标题翻译：压电薄膜元件和压电薄膜器件
公开(公告)号：US08310136B2
公开(公告)日：2012-11-13
申请号：US12814544
申请日：2010-06-14
申请人： Kazufumi Suenaga , Kenji Shibata , Hideki Sato , Akira Nomoto
发明人： Kazufumi Suenaga , Kenji Shibata , Hideki Sato , Akira Nomoto
IPC分类号： H01L41/187
CPC分类号： H01L41/316 , H01L41/1873
摘要： A piezoelectric thin film element, comprising a piezoelectric thin film lamination with at least a lower electrode, a piezoelectric thin film represented by a general formula (NaxKyLiz)NbO3 (0≦x 1≦, 0≦y≦1, 0≦z≦0.2, x+y+z=1), and an upper electrode disposed on a substrate, wherein the piezoelectric thin film has a crystal structure of a pseudo-cubic crystal or a tetragonal crystal or an orthorhombic crystal, or has a composition in which one of these crystals exists or at least two or more of them coexist, and is preferentially oriented to a specific axis smaller than or equal to two axes of these crystals, and in the ratio of component (001) to component (111), volume fraction of the component (001) falls within a range of 60% or more and 100% or less, and the volume fraction of the component (111) falls within a range of 0% or more and 40% or less, in a case that the total of the component (001) and the component (111) is set to be 100%.
摘要翻译：一种压电薄膜元件，包括具有至少一个下电极的压电薄膜层压体，由通式（NaxKyLiz）NbO 3表示的压电薄膜（0＆amp; nlE; x 1＆nlE; 0＆nlE; y＆nlE; 1,0＆amp; nlE; z＆nlE; 0.2 ，x + y + z = 1），以及设置在基板上的上电极，其中，所述压电薄膜具有假立方晶体或四方晶体或正交晶体的晶体结构，或者具有其中一个存在这些晶体，或者其中至少两种以上共存，并且优选地定向为小于或等于这些晶体的两个轴的特定轴，并且以组分（001）与组分（111）的比例，体积分数的组分（001）的含量在60％以上且100％以下的范围内，成分（111）的体积分数在0％以上且40％以下的范围内，在组分（001）和组分（111）的总和被设置为100％。

2. 发明授权

US08232708B2 Piezoelectric thin film element, and piezoelectric thin film device 有权
标题翻译：压电薄膜元件和压电薄膜器件
公开(公告)号：US08232708B2
公开(公告)日：2012-07-31
申请号：US12816848
申请日：2010-06-16
申请人： Kenji Shibata , Hideki Sato , Kazufumi Suenaga , Akira Nomoto
发明人： Kenji Shibata , Hideki Sato , Kazufumi Suenaga , Akira Nomoto
IPC分类号： H01L41/04
CPC分类号： H01L41/094 , H01L41/1873 , H01L41/316
摘要： To stably provide a KNN piezoelectric thin film element having piezoelectric characteristics replaceable with a PZT thin film. A piezoelectric thin film element includes: a piezoelectric thin film on a substrate, having an alkali niobium oxide series perovskite structure expressed by a general formula (K1-xNax)NbO3 (0
摘要翻译：稳定地提供具有可以用PZT薄膜替代的压电特性的KNN压电薄膜元件。压电薄膜元件包括：基底上的压电薄膜，其具有由通式（K1-xNax）NbO3（0

3. 发明申请

US20100314972A1 PIEZOELECTRIC THIN FILM ELEMENT AND PIEZOELECTRIC THIN FILM DEVICE INCLUDING THE SAME 有权
标题翻译：压电薄膜元件和包括其的压电薄膜器件
公开(公告)号：US20100314972A1
公开(公告)日：2010-12-16
申请号：US12797340
申请日：2010-06-09
申请人： Kazufumi Suenaga , Kenji Shibata , Hideki Sato , Akira Nomoto
发明人： Kazufumi Suenaga , Kenji Shibata , Hideki Sato , Akira Nomoto
IPC分类号： H01L41/04
CPC分类号： H01L41/18
摘要： A piezoelectric thin film element is provided, including on a substrate: a piezoelectric thin film expressed by a general formula (NaxKyLiz)NbO3 (0≦x≦1, 0≦y≦1, 0≦z≦0.2, x+y+z=1); and an upper electrode laminated thereon, wherein the piezoelectric thin film has a crystal structure of any one of a pseudo-cubic crystal, a tetragonal crystal, or an orthorhombic crystal, or has a crystal structure of coexistence of at least two of the pseudo-cubic crystal, the tetragonal crystal, or the orthorhombic crystal, and in such crystal structures, there is a coexistence of (001) oriented crystal grains oriented in (001) direction, and (111) oriented crystal grains oriented in (111) direction, with an angle formed by at least one of the crystal axes of the crystal grains and a normal line of the substrate surface set to be in a range of 0° to 10°.
摘要翻译：提供了一种压电薄膜元件，其包括在基板上：由通式（NaxKyLiz）NbO3（0＆amp; nlE; x＆lt; lE; 1,0＆amp; nlE; y＆nlE; 1,0＆amp; nlE; z＆nlE; 0.2，x + y + z表示的压电薄膜 = 1）; 其上层叠有上电极，其中，所述压电薄膜具有假立方晶体，四方晶体或正交晶体中的任一种的晶体结构，或者具有至少两个所述伪晶体的晶体结构，立方晶体，四方晶体或正交晶体，并且在这样的晶体结构中，（001）取向的（001）取向晶粒与（111）方向取向的（111）取向晶粒共存，由晶粒的晶轴和衬底表面的法线中的至少一个形成的角度设定在0°至10°的范围内。

4. 发明授权

US08310135B2 Piezoelectric thin film element and piezoelectric thin film device including the same 有权
标题翻译：压电薄膜元件和包括该压电薄膜元件的压电薄膜器件
公开(公告)号：US08310135B2
公开(公告)日：2012-11-13
申请号：US12797340
申请日：2010-06-09
申请人： Kazufumi Suenaga , Kenji Shibata , Hideki Sato , Akira Nomoto
发明人： Kazufumi Suenaga , Kenji Shibata , Hideki Sato , Akira Nomoto
IPC分类号： H01L41/187
CPC分类号： H01L41/18
摘要： A piezoelectric thin film element is provided, including on a substrate: a piezoelectric thin film expressed by a general formula (NaxKyLiz)NbO3 (0≦x≦1, 0≦y≦1, 0≦z≦0.2, x+y+z=1); and an upper electrode laminated thereon, wherein the piezoelectric thin film has a crystal structure of any one of a pseudo-cubic crystal, a tetragonal crystal, or an orthorhombic crystal, or has a crystal structure of coexistence of at least two of the pseudo-cubic crystal, the tetragonal crystal, or the orthorhombic crystal, and in such crystal structures, there is a coexistence of (001) oriented crystal grains oriented in (001) direction, and (111) oriented crystal grains oriented in (111) direction, with an angle formed by at least one of the crystal axes of the crystal grains and a normal line of the substrate surface set to be in a range of 0° to 10°.
摘要翻译：提供了一种压电薄膜元件，其包括在基板上：由通式（NaxKyLiz）NbO3（0＆amp; nlE; x＆lt; lE; 1,0＆amp; nlE; y＆nlE; 1,0＆amp; nlE; z＆nlE; 0.2，x + y + z表示的压电薄膜 = 1）; 其上层叠有上电极，其中，所述压电薄膜具有假立方晶体，四方晶体或正交晶体中的任一种的晶体结构，或者具有至少两个所述伪晶体的晶体结构，立方晶体，四方晶体或正交晶体，并且在这样的晶体结构中，（001）取向的（001）取向晶粒与（111）方向取向的（111）取向晶粒共存，由晶粒的晶轴和衬底表面的法线中的至少一个形成的角度设定在0°至10°的范围内。

5. 发明授权

US08304966B2 Piezoelectric thin film element and manufacturing method of the piezoelectric thin film element, piezoelectric thin film device 有权
标题翻译：压电薄膜元件和压电薄膜元件的制造方法，压电薄膜器件
公开(公告)号：US08304966B2
公开(公告)日：2012-11-06
申请号：US12819424
申请日：2010-06-21
申请人： Kazufumi Suenaga , Kenji Shibata , Hideki Sato , Akira Nomoto
发明人： Kazufumi Suenaga , Kenji Shibata , Hideki Sato , Akira Nomoto
IPC分类号： H01L41/187
CPC分类号： C04B35/495 , C04B2235/3201 , C04B2235/3203 , C04B2235/3251 , H01L41/187 , H01L41/1873 , H01L41/316
摘要： To provide a piezoelectric thin film element capable of improving piezoelectric characteristics and realize a piezoelectric thin film device with high performance and high reliability, comprising: a substrate; and a piezoelectric thin film formed on the substrate by a sputtering method, with perovskite oxide expressed by (NaxKyLiz)NbO3 (0≦x≦1, 0≦y≦1, 0≦z≦0, 2, x+y+z=1) as a main phase, wherein an absolute value of an internal stress of the piezoelectric thin film is 1.6 GPa or less.
摘要翻译：为了提供能够改善压电特性并实现具有高性能和高可靠性的压电薄膜器件的压电薄膜元件，包括：衬底; （NaxKyLiz）NbO3（0＆nlE; x＆nlE; 1,0＆amp; nlE; y＆nlE; 1,0＆amp; nlE; z＆nlE; 0,2，x + y + z = 0）表示的由钙钛矿氧化物形成的基板上的压电薄膜， 1）作为主相，其中压电薄膜的内应力的绝对值为1.6GPa以下。

6. 发明授权

US09231185B2 Method for manufacturing a piezoelectric film wafer, piezoelectric film element, and piezoelectric film device 有权
标题翻译：制造压电薄膜晶片，压电薄膜元件和压电薄膜器件的方法
公开(公告)号：US09231185B2
公开(公告)日：2016-01-05
申请号：US13137202
申请日：2011-07-27
申请人： Fumimasa Horikiri , Kenji Shibata , Kazufumi Suenaga , Kazutoshi Watanabe , Akira Nomoto
发明人： Fumimasa Horikiri , Kenji Shibata , Kazufumi Suenaga , Kazutoshi Watanabe , Akira Nomoto
IPC分类号： H01B13/00 , H01L41/08 , H05K3/10 , H01L21/67 , H01L41/187 , H01L41/332 , H01L41/314 , H01L41/316 , H01L41/318
CPC分类号： H01L41/0805 , H01L21/67069 , H01L41/1873 , H01L41/314 , H01L41/316 , H01L41/318 , H01L41/332 , H05K3/108 , Y10T428/24479
摘要： A method for manufacturing a piezoelectric film wafer includes a first processing step for carrying out an ion etching on a KNN piezoelectric film formed on a substrate by using a gas containing Ar, and a second processing step for carrying out a reactive ion etching by using a mixed etching gas containing a fluorine-based reactive gas and Ar after the first processing step.
摘要翻译：一种压电薄膜晶片的制造方法，其特征在于，包括：通过使用含有Ar的气体，在形成于基板上的KNN压电薄膜进行离子蚀刻的第一加工工序;以及第二加工工序，含有氟系反应性气体的混合蚀刻气体和第一处理工序后的Ar。

7. 发明授权

US08446074B2 Piezoelectric thin-film element and piezoelectric thin-film device 有权
标题翻译：压电薄膜元件和压电薄膜器件
公开(公告)号：US08446074B2
公开(公告)日：2013-05-21
申请号：US13636883
申请日：2011-03-24
申请人： Kenji Shibata , Kazufumi Suenaga , Kazutoshi Watanabe , Akira Nomoto , Fumimasa Horikiri
发明人： Kenji Shibata , Kazufumi Suenaga , Kazutoshi Watanabe , Akira Nomoto , Fumimasa Horikiri
IPC分类号： H01L41/187
CPC分类号： C23C14/025 , C23C14/088 , C23C14/35 , H01L41/0805 , H01L41/1873 , H01L41/316
摘要： There is provided a piezoelectric thin film element, comprising: a substrate 1; and a piezoelectric thin film 3 having an alkali niobium oxide-based perovskite structure represented by a composition formula (K1-xNax)yNbO3 provided on the substrate 1, wherein a carbon concentration of the piezoelectric thin film 3 is 2×1019/cm3 or less, or a hydrogen concentration of the piezoelectric thin film 3 is 4×1019/cm3 or less.
摘要翻译：提供了一种压电薄膜元件，包括：基板1; 以及设置在基板1上的由组成式（K1-xNax）yNbO3表示的碱铌氧化物系钙钛矿结构的压电薄膜3，其中压电薄膜3的碳浓度为2×1019 / cm3以下，或压电薄膜3的氢浓度为4×1019 / cm3以下。

8. 发明申请

US20120056508A1 Method for manufacturing a piezoelectric film wafer, piezolelectric film element, and piezoelectric film device 有权
标题翻译：压电薄膜晶片的制造方法，压电薄膜元件和压电薄膜元件
公开(公告)号：US20120056508A1
公开(公告)日：2012-03-08
申请号：US13137689
申请日：2011-09-02
申请人： Fumimasa Horikiri , Kenji Shibata , Kazufumi Suenaga , Kazutoshi Watanabe , Akira Nomoto
发明人： Fumimasa Horikiri , Kenji Shibata , Kazufumi Suenaga , Kazutoshi Watanabe , Akira Nomoto
IPC分类号： H01L41/047 , H01L41/22 , B32B3/00 , H01L41/113 , H01L41/09
CPC分类号： H01L41/0805 , H01L41/1873 , H01L41/314 , H01L41/316 , H01L41/318 , H01L41/332 , Y10T428/24479
摘要： A method for manufacturing a piezoelectric film wafer includes an etching step for carrying out a dry etching on a piezoelectric film formed on a substrate by using a gas containing Ar, and a step of changing a rate of the dry etching by detecting a change in an emission peak intensity of Na in emitted ion plasma the piezoelectric film. The piezoelectric film is made of an alkali niobate-based perovskite structure expressed in a composition formula (K1-xNax)NbO3 (0.4≦x≦0.7).
摘要翻译：一种压电薄膜晶片的制造方法，其特征在于，包括：通过使用含有Ar的气体，对形成在基板上的压电薄膜进行干蚀刻的蚀刻工序;以及通过检测所述干蚀刻发射离子等离子体中Na的发射峰强度为压电薄膜。压电膜由组成式（K1-xNax）NbO3（0.4＆amp; NlE; x＆amp; NlE; 0.7）表示的基于铌酸盐的钙钛矿结构制成。

9. 发明申请

US20110121690A1 PIEZOELECTRIC THIN FILM ELEMENT AND PIEZOELECTRIC THIN FILM DEVICE 有权
标题翻译：压电薄膜元件和压电薄膜器件
公开(公告)号：US20110121690A1
公开(公告)日：2011-05-26
申请号：US12948083
申请日：2010-11-17
申请人： Kenji SHIBATA , Kazufumi Suenaga , Akira Nomoto , Kazutoshi Watanabe
发明人： Kenji SHIBATA , Kazufumi Suenaga , Akira Nomoto , Kazutoshi Watanabe
IPC分类号： H01L41/18 , H01L41/047
CPC分类号： H01L41/316 , C04B35/495 , C04B2235/3201 , C04B2235/3251 , C04B2235/656 , C04B2235/762 , C04B2235/768 , C04B2235/787 , H01L41/0477 , H01L41/094 , H01L41/1873 , H01L41/29
摘要： To provide a piezoelectric thin film element comprising: a piezoelectric thin film on a substrate, having an alkali-niobium oxide-based perovskite structure expressed by a composition formula (K1-xNax)yNbO3, wherein composition ratios x, y of the piezoelectric thin film expressed by (K1-xNax)yNbO3 are in a range of 0.4≦x≦0.7 and 0.7≦y≦0.94.
摘要翻译：本发明提供一种压电薄膜元件，其特征在于，具有：基板上具有由组成式（K1-xNax）yNbO3表示的碱铌氧化物系钙钛矿结构的压电薄膜，其中，压电薄膜的组成比x，y 由（K1-xNax）yNbO3表示，在0.4≤n1E的范围内，x＆lt; l1; 0.7和0.7＆lt; nEE; y＆nlE; 0.94。

10. 发明授权

US09166142B2 Manufacturing method of piezoelectric film element, piezoelectric film element and piezoelectric device 有权
标题翻译：压电薄膜元件，压电薄膜元件和压电元件的制造方法
公开(公告)号：US09166142B2
公开(公告)日：2015-10-20
申请号：US13567157
申请日：2012-08-06
申请人： Fumimasa Horikiri , Kenji Shibata , Kazufumi Suenaga , Kazutoshi Watanabe , Akira Nomoto
发明人： Fumimasa Horikiri , Kenji Shibata , Kazufumi Suenaga , Kazutoshi Watanabe , Akira Nomoto
IPC分类号： H01L41/332 , H01L41/08 , H01L41/047 , H01G5/18 , H01L41/09 , H01L41/187
CPC分类号： H01L41/332 , H01G5/18 , H01L41/047 , H01L41/0477 , H01L41/0805 , H01L41/094 , H01L41/1873
摘要： A manufacturing method of a piezoelectric film element includes forming a piezoelectric film including a lead-free alkali niobate based compound having a perovskite structure represented by a compositional formula of (K1-XNaX)NbO3 on a substrate, and dry-etching the piezoelectric film by using a low-pressure plasma including a fluorine system reactive gas.
摘要翻译：压电薄膜元件的制造方法包括在基板上形成具有由（K1-XNaX）NbO3组成式表示的钙钛矿结构的无铅碱铌酸酯系化合物的压电膜，并通过以下方式对压电膜进行干法蚀刻使用包含氟系反应气体的低压等离子体。

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