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1. 发明授权

US09231185B2 Method for manufacturing a piezoelectric film wafer, piezoelectric film element, and piezoelectric film device 有权
标题翻译：制造压电薄膜晶片，压电薄膜元件和压电薄膜器件的方法
公开(公告)号：US09231185B2
公开(公告)日：2016-01-05
申请号：US13137202
申请日：2011-07-27
申请人： Fumimasa Horikiri , Kenji Shibata , Kazufumi Suenaga , Kazutoshi Watanabe , Akira Nomoto
发明人： Fumimasa Horikiri , Kenji Shibata , Kazufumi Suenaga , Kazutoshi Watanabe , Akira Nomoto
IPC分类号： H01B13/00 , H01L41/08 , H05K3/10 , H01L21/67 , H01L41/187 , H01L41/332 , H01L41/314 , H01L41/316 , H01L41/318
CPC分类号： H01L41/0805 , H01L21/67069 , H01L41/1873 , H01L41/314 , H01L41/316 , H01L41/318 , H01L41/332 , H05K3/108 , Y10T428/24479
摘要： A method for manufacturing a piezoelectric film wafer includes a first processing step for carrying out an ion etching on a KNN piezoelectric film formed on a substrate by using a gas containing Ar, and a second processing step for carrying out a reactive ion etching by using a mixed etching gas containing a fluorine-based reactive gas and Ar after the first processing step.
摘要翻译：一种压电薄膜晶片的制造方法，其特征在于，包括：通过使用含有Ar的气体，在形成于基板上的KNN压电薄膜进行离子蚀刻的第一加工工序;以及第二加工工序，含有氟系反应性气体的混合蚀刻气体和第一处理工序后的Ar。

2. 发明授权

US08446074B2 Piezoelectric thin-film element and piezoelectric thin-film device 有权
标题翻译：压电薄膜元件和压电薄膜器件
公开(公告)号：US08446074B2
公开(公告)日：2013-05-21
申请号：US13636883
申请日：2011-03-24
申请人： Kenji Shibata , Kazufumi Suenaga , Kazutoshi Watanabe , Akira Nomoto , Fumimasa Horikiri
发明人： Kenji Shibata , Kazufumi Suenaga , Kazutoshi Watanabe , Akira Nomoto , Fumimasa Horikiri
IPC分类号： H01L41/187
CPC分类号： C23C14/025 , C23C14/088 , C23C14/35 , H01L41/0805 , H01L41/1873 , H01L41/316
摘要： There is provided a piezoelectric thin film element, comprising: a substrate 1; and a piezoelectric thin film 3 having an alkali niobium oxide-based perovskite structure represented by a composition formula (K1-xNax)yNbO3 provided on the substrate 1, wherein a carbon concentration of the piezoelectric thin film 3 is 2×1019/cm3 or less, or a hydrogen concentration of the piezoelectric thin film 3 is 4×1019/cm3 or less.
摘要翻译：提供了一种压电薄膜元件，包括：基板1; 以及设置在基板1上的由组成式（K1-xNax）yNbO3表示的碱铌氧化物系钙钛矿结构的压电薄膜3，其中压电薄膜3的碳浓度为2×1019 / cm3以下，或压电薄膜3的氢浓度为4×1019 / cm3以下。

3. 发明申请

US20120056508A1 Method for manufacturing a piezoelectric film wafer, piezolelectric film element, and piezoelectric film device 有权
标题翻译：压电薄膜晶片的制造方法，压电薄膜元件和压电薄膜元件
公开(公告)号：US20120056508A1
公开(公告)日：2012-03-08
申请号：US13137689
申请日：2011-09-02
申请人： Fumimasa Horikiri , Kenji Shibata , Kazufumi Suenaga , Kazutoshi Watanabe , Akira Nomoto
发明人： Fumimasa Horikiri , Kenji Shibata , Kazufumi Suenaga , Kazutoshi Watanabe , Akira Nomoto
IPC分类号： H01L41/047 , H01L41/22 , B32B3/00 , H01L41/113 , H01L41/09
CPC分类号： H01L41/0805 , H01L41/1873 , H01L41/314 , H01L41/316 , H01L41/318 , H01L41/332 , Y10T428/24479
摘要： A method for manufacturing a piezoelectric film wafer includes an etching step for carrying out a dry etching on a piezoelectric film formed on a substrate by using a gas containing Ar, and a step of changing a rate of the dry etching by detecting a change in an emission peak intensity of Na in emitted ion plasma the piezoelectric film. The piezoelectric film is made of an alkali niobate-based perovskite structure expressed in a composition formula (K1-xNax)NbO3 (0.4≦x≦0.7).
摘要翻译：一种压电薄膜晶片的制造方法，其特征在于，包括：通过使用含有Ar的气体，对形成在基板上的压电薄膜进行干蚀刻的蚀刻工序;以及通过检测所述干蚀刻发射离子等离子体中Na的发射峰强度为压电薄膜。压电膜由组成式（K1-xNax）NbO3（0.4＆amp; NlE; x＆amp; NlE; 0.7）表示的基于铌酸盐的钙钛矿结构制成。

4. 发明申请

US20110121690A1 PIEZOELECTRIC THIN FILM ELEMENT AND PIEZOELECTRIC THIN FILM DEVICE 有权
标题翻译：压电薄膜元件和压电薄膜器件
公开(公告)号：US20110121690A1
公开(公告)日：2011-05-26
申请号：US12948083
申请日：2010-11-17
申请人： Kenji SHIBATA , Kazufumi Suenaga , Akira Nomoto , Kazutoshi Watanabe
发明人： Kenji SHIBATA , Kazufumi Suenaga , Akira Nomoto , Kazutoshi Watanabe
IPC分类号： H01L41/18 , H01L41/047
CPC分类号： H01L41/316 , C04B35/495 , C04B2235/3201 , C04B2235/3251 , C04B2235/656 , C04B2235/762 , C04B2235/768 , C04B2235/787 , H01L41/0477 , H01L41/094 , H01L41/1873 , H01L41/29
摘要： To provide a piezoelectric thin film element comprising: a piezoelectric thin film on a substrate, having an alkali-niobium oxide-based perovskite structure expressed by a composition formula (K1-xNax)yNbO3, wherein composition ratios x, y of the piezoelectric thin film expressed by (K1-xNax)yNbO3 are in a range of 0.4≦x≦0.7 and 0.7≦y≦0.94.
摘要翻译：本发明提供一种压电薄膜元件，其特征在于，具有：基板上具有由组成式（K1-xNax）yNbO3表示的碱铌氧化物系钙钛矿结构的压电薄膜，其中，压电薄膜的组成比x，y 由（K1-xNax）yNbO3表示，在0.4≤n1E的范围内，x＆lt; l1; 0.7和0.7＆lt; nEE; y＆nlE; 0.94。

5. 发明授权

US09166142B2 Manufacturing method of piezoelectric film element, piezoelectric film element and piezoelectric device 有权
标题翻译：压电薄膜元件，压电薄膜元件和压电元件的制造方法
公开(公告)号：US09166142B2
公开(公告)日：2015-10-20
申请号：US13567157
申请日：2012-08-06
申请人： Fumimasa Horikiri , Kenji Shibata , Kazufumi Suenaga , Kazutoshi Watanabe , Akira Nomoto
发明人： Fumimasa Horikiri , Kenji Shibata , Kazufumi Suenaga , Kazutoshi Watanabe , Akira Nomoto
IPC分类号： H01L41/332 , H01L41/08 , H01L41/047 , H01G5/18 , H01L41/09 , H01L41/187
CPC分类号： H01L41/332 , H01G5/18 , H01L41/047 , H01L41/0477 , H01L41/0805 , H01L41/094 , H01L41/1873
摘要： A manufacturing method of a piezoelectric film element includes forming a piezoelectric film including a lead-free alkali niobate based compound having a perovskite structure represented by a compositional formula of (K1-XNaX)NbO3 on a substrate, and dry-etching the piezoelectric film by using a low-pressure plasma including a fluorine system reactive gas.
摘要翻译：压电薄膜元件的制造方法包括在基板上形成具有由（K1-XNaX）NbO3组成式表示的钙钛矿结构的无铅碱铌酸酯系化合物的压电膜，并通过以下方式对压电膜进行干法蚀刻使用包含氟系反应气体的低压等离子体。

6. 发明授权

US08860286B2 Piezoelectric thin film element, and piezoelectric thin film device 有权
标题翻译：压电薄膜元件和压电薄膜器件
公开(公告)号：US08860286B2
公开(公告)日：2014-10-14
申请号：US13577405
申请日：2011-02-15
申请人： Kazufumi Suenaga , Kenji Shibata , Kazutoshi Watanabe , Akira Nomoto
发明人： Kazufumi Suenaga , Kenji Shibata , Kazutoshi Watanabe , Akira Nomoto
IPC分类号： H01L41/187 , H01L41/08 , H01L41/316
CPC分类号： H01L41/0805 , H01L41/1873 , H01L41/316
摘要： Disclosed are a piezoelectric thin film element and a piezoelectric thin film device which have improved piezoelectric properties and high performance and can be produced in improved yields. The piezoelectric thin film element (1) comprises: a substrate (10), and a piezoelectric thin film (40) which is arranged on the substrate (10), has at least one crystal structure represented by general formula (NaxKyLiz)NbO3 (0≦x≦1, 0≦y≦1, 0≦z≦0.2, x+y+z=1) and selected from the group consisting of pseudo-cubic crystal, a hexagonal crystal, and an orthorhombic crystal, and contains an inert gas element at a ratio of 80 ppm or less by mass.
摘要翻译：公开了一种压电薄膜元件和压电薄膜器件，其具有改进的压电性能和高性能，并且可以以提高的产率制造。压电薄膜元件（1）包括：基板（10）和布置在基板（10）上的压电薄膜（40），具有至少一个由通式（NaxKyLiz）NbO 3（0＆nlE）表示的晶体结构 ; x＆nlE; 1,0，nlE; y＆nlE; 1,0，nlE; z＆nlE; 0.2，x + y + z = 1），选自假立方晶体，六方晶体和正交晶体，气体元素的比例为80ppm以下。

7. 发明授权

US08896187B2 Piezoelectric film and method for manufacturing the same, piezoelectric film element and method for manufacturing the same, and piezoelectric film device 有权
标题翻译：压电薄膜及其制造方法，压电薄膜元件及其制造方法以及压电薄膜器件
公开(公告)号：US08896187B2
公开(公告)日：2014-11-25
申请号：US13532081
申请日：2012-06-25
申请人： Kazufumi Suenaga , Kenji Shibata , Kazutoshi Watanabe , Akira Nomoto , Fumimasa Horikiri
发明人： Kazufumi Suenaga , Kenji Shibata , Kazutoshi Watanabe , Akira Nomoto , Fumimasa Horikiri
IPC分类号： H01L41/083 , H01L41/08 , H01L41/187 , H01L41/316
CPC分类号： H01L41/0805 , H01L41/1873 , H01L41/316
摘要： There is provided a piezoelectric film having an alkali niobate-based perovskite structure expressed by a general formula (NaxKyLiz)NbO3(0≦x≦1, 0≦y≦1, 0≦z≦0.2, x+y+z=1), wherein the alkali niobate has a crystal structure of a pseudo-cubic crystal, a tetragonal crystal, an orthorhombic crystal, a monoclinic crystal, a rhombohedral crystal, or has a crystal structure of coexistence of them, and when total of K—O bonding and K-Metal bonding is set as 100% in a binding state around K-atom of the alkali niobate, a K—O bonding ratio is 46.5% or more and a K-Metal bonding ratio is 53.5% or less, wherein the Metal indicates a metal atom included in the piezoelectric film.
摘要翻译：提供了一种由通式（NaxKyLiz）NbO3（0＆amp; nlE; x＆nlE; 1,0＆amp; nlE; y＆nlE; 1,0＆amp; nlE; z＆nlE; 0.2，x + y + z = 1）表示的碱铌酸盐类钙钛矿结构的压电膜，其中铌酸锂具有假立方晶体，四方晶体，正交晶体，单斜晶体，菱方晶体的晶体结构，或者具有共晶的晶体结构，并且当总共K-O键合并且在铌酸碱钾的K原子附近的结合状态下将K金属键合设定为100％，K-O键合比为46.5％以上，K-金属键合比为53.5％以下，其中，金属表示包含在压电膜中的金属原子。

8. 发明授权

US08519602B2 Piezoelectric thin film element and piezoelectric thin film device using a piezoelectric thin film of alkali-niobium oxide series 有权
标题翻译：压电薄膜元件和使用碱铌氧化物系列的压电薄膜的压电薄膜器件
公开(公告)号：US08519602B2
公开(公告)日：2013-08-27
申请号：US13006842
申请日：2011-01-14
申请人： Kenji Shibata , Kazufumi Suenaga , Akira Nomoto , Kazutoshi Watanabe
发明人： Kenji Shibata , Kazufumi Suenaga , Akira Nomoto , Kazutoshi Watanabe
IPC分类号： H01L41/187
CPC分类号： H01L41/094 , H01L41/1873 , H03H9/02031
摘要： To provide a piezoelectric thin film on a substrate, having an alkali-niobium oxide-based perovskite structure expressed by a composition formula (K1-xNax)yNbO3, wherein the composition ratio x of the piezoelectric thin film expressed by (K1-xNax)yNbO3 is in a range of 0.4≦x≦0.7, and a half width of a rocking curve of (001) plane by X-ray diffraction measurement is in a range of 0.5° or more and 2.5° or less.
摘要翻译：为了在基板上提供具有由组成式（K1-xNax）yNbO3表示的碱金属氧化铌基钙钛矿结构的压电薄膜，其中由（K1-xNax）yNbO3表示的压电薄膜的组成比x 在0.4 @ x @ 0.7的范围内，并且通过X射线衍射测量的（001）面的摇摆曲线的半宽度在0.5°以上且2.5°以下的范围内。

9. 发明申请

US20120304429A1 MANUFACTURING METHODS OF PIEZOELECTRIC FILM ELEMENT AND PIEZOELECTRIC DEVICE 审中-公开
标题翻译：压电薄膜元件和压电元件的制造方法
公开(公告)号：US20120304429A1
公开(公告)日：2012-12-06
申请号：US13488230
申请日：2012-06-04
申请人： Fumimasa HORIKIRI , Kenji Shibata , Kazufumi Suenaga , Kazutoshi Watanabe , Akira Nomoto
发明人： Fumimasa HORIKIRI , Kenji Shibata , Kazufumi Suenaga , Kazutoshi Watanabe , Akira Nomoto
IPC分类号： H01L41/22
CPC分类号： H01L41/0815 , H01L41/1873 , H01L41/316 , H01L41/332 , Y10T29/42
摘要： A manufacturing method of a piezoelectric film element includes forming a lower electrode on a substrate, forming a piezoelectric film including a lead-free alkali niobate based compound having a perovskite structure on the lower electrode, forming a mask pattern on the piezoelectric film, dry-etching the piezoelectric film via the mask pattern, removing the mask pattern after the dry etching, and heat-treating the piezoelectric film in an oxidizing atmosphere. A manufacturing method of a piezoelectric device includes forming an upper electrode on the piezoelectric film of the piezoelectric film element formed by the manufacturing method of the piezoelectric film element, and connecting an electric voltage applying means or an electric voltage detecting means to the lower electrode and the upper electrode.
摘要翻译：压电薄膜元件的制造方法包括在基板上形成下电极，在下电极上形成包含具有钙钛矿结构的无铅碱铌酸酯系化合物的压电膜，在压电膜上形成掩模图案，通过掩模图案蚀刻压电膜，在干蚀刻之后去除掩模图案，并在氧化气氛中对压电膜进行热处理。压电器件的制造方法包括：在压电膜元件的制造方法形成的压电膜元件的压电膜上形成上电极，将电压施加单元或电压检测单元连接到下电极，上电极。

10. 发明授权

US08581477B2 Piezoelectric film element using (Na,K,Li)NbO3 有权
标题翻译：使用（Na，K，Li）NbO 3的压电薄膜元件
公开(公告)号：US08581477B2
公开(公告)日：2013-11-12
申请号：US13018693
申请日：2011-02-01
申请人： Kazufumi Suenaga , Kenji Shibata , Kazutoshi Watanabe , Akira Nomoto
发明人： Kazufumi Suenaga , Kenji Shibata , Kazutoshi Watanabe , Akira Nomoto
IPC分类号： H01L41/047 , H01L41/187
CPC分类号： H01L41/187 , H01L41/0477 , H01L41/0805 , H01L41/094 , H01L41/1873 , H01L41/29 , H01L41/316
摘要： A piezoelectric film element is provided, which is capable of improving piezoelectric properties, having on a substrate at least a lower electrode, a lead-free piezoelectric film, and an upper electrode, wherein at least the lower electrode out of the lower electrode and the upper electrode has a crystal structure of a cubic crystal system, a tetragonal crystal system, an orthorhombic crystal system, a hexagonal crystal system, a monoclinic crystal system, a triclinic crystal system, a trigonal crystal system, or has a composition in which one of these crystals exists or two or more of them coexist, and crystal axes of the crystal structure are preferentially oriented to a specific axis smaller than or equal to two axes of these crystals, and a ratio c/a′ is set in a range of 0.992 or more and 0.999 or less, which is the ratio of a crystal lattice spacing c in a direction of a normal line to the substrate surface, with respect to a crystal lattice spacing a′ whose inclination angle from the substrate surface is in a range of 10° or more and 30° or less.
摘要翻译：提供一种能够改善压电性能的压电膜元件，其在基板上至少具有下电极，无铅压电膜和上电极，其中至少下电极中的下电极和上电极具有立方晶系，四方晶系，正交晶系，六方晶系，单斜晶系，三斜晶系，三
晶体系的晶体结构，或其组成为：这些晶体存在或其中的两种以上共存，并且晶体结构的晶轴优先取向小于或等于这些晶体的两个轴的特定轴，并且将比率c / a'设定在0.992的范围内以上且0.999以下，即与法线的方向相对于基板表面的晶格间距c的比例，相对于晶格间距a'，其倾斜角为基板表面的厚度在10°以上且30°以下的范围内。

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