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    • 2. 发明申请
    • EXTERNAL RESONATOR TYPE WAVELENGTH VARIABLE SEMICONDUCTOR LASER
    • 外部谐振器类型波长可变半导体激光器
    • US20100111119A1
    • 2010-05-06
    • US12593513
    • 2008-02-06
    • Kenji SatoKenji MizutaniShinya SudoKoji Kudo
    • Kenji SatoKenji MizutaniShinya SudoKoji Kudo
    • H01S5/06H01S5/14
    • H01S5/141
    • In an external resonator type semiconductor wavelength tunable laser apparatus using a wavelength tunable mirror or a wavelength tunable filter which uses a refractive index change of liquid crystal, a resonant frequency is set as FR, when a response of the refractive index change to a drive voltage frequency of liquid crystal becomes maximum. A frequency F1 of a drive AC power supply voltage to control the refractive index of liquid crystal is set to a frequency largely different from FR. A wavelength tunable mirror or a wavelength tunable filter is driven with a signal in which a dither AC signal F2 of a frequency close to the FR and an AC power supply voltage are superimposed. A PD to monitor a light output from the laser controls an amplitude of the drive AC power voltage such that an amplitude of the dither AC signal F2 become minimum. Thus, high laser mode stability is realized.
    • 在使用波长可调镜或使用液晶的折射率变化的波长可调滤波器的外部谐振器型半导体波长可调激光装置中,当折射率的响应变化为驱动电压时,共振频率被设定为FR 液晶的频率变得最大。 控制液晶的折射率的驱动交流电源电压的频率F1被设定为与FR大不相同的频率。 波长可调谐镜或波长可调滤波器由其中叠加了频率接近FR的频率抖动交流信号F2和交流电源电压的信号驱动。 用于监视来自激光器的光输出的PD控制驱动AC电源电压的幅度,使得抖动AC信号F2的幅度变得最小。 因此,实现了高激光模式的稳定性。
    • 4. 发明授权
    • Semiconductor laser, module and optical transmitter
    • 半导体激光器,模块和光发射机
    • US08457168B2
    • 2013-06-04
    • US12086287
    • 2007-01-10
    • Koji KudoShinya SudoKenji SatoKenji Mizutani
    • Koji KudoShinya SudoKenji SatoKenji Mizutani
    • H01S5/00
    • H01S5/026
    • A semiconductor optical waveguide-A having an optical amplification function and a semiconductor optical waveguide-B having a light control function are integrated together on the same substrate. A facet of the semiconductor optical waveguide-A facing an isolation trench and a facet of the semiconductor optical waveguide-B facing the isolation trench are configured as a composite optical reflector/optical connector using an optical interference. The facet of the semiconductor optical waveguide-A achieves an optical reflectivity not higher than the reflectivity corresponding to a cleaved facet and not smaller than several percent, and an optical coupling coefficient of not lower than 50% between the semiconductor optical waveguide-A and the semiconductor optical waveguide-B.
    • 具有光放大功能的半导体光波导A和具有光控功能的半导体光波导-B一起集成在同一基板上。 面向隔离沟槽的半导体光波导A的面和面向隔离沟槽的半导体光波导-B的面被配置为使用光学干涉的复合光反射器/光连接器。 半导体光波导A的小面实现不高于对应于切割面的反射率并且不小于几个百分比的光学反射率,并且半导体光波导A与第二半导体光波导A之间的光耦合系数不低于50% 半导体光波导-B。
    • 7. 发明授权
    • External resonator-type wavelength tunable laser device
    • 外部谐振器型波长可调激光器件
    • US08189631B2
    • 2012-05-29
    • US12664294
    • 2008-05-22
    • Shinya SudoKenji SatoKoji KudoKenji MizutaniJan De Merlier
    • Shinya SudoKenji SatoKoji KudoKenji MizutaniJan De Merlier
    • H01S3/13
    • H01S5/141H01S5/02248H01S5/028H01S5/0287H01S5/1039
    • The present invention provides an external resonator-type wavelength tunable laser device that can properly fulfill a wavelength tuning function even with the use of a planar wavelength tunable reflector involving a considerable level of residual reflection. The external resonator-type wavelength tunable laser device includes a planar reflection structure enabling a reflection spectral peak wavelength to be varied and a semiconductor element as a semiconductor gain medium. The semiconductor gain medium is composed of a multiple quantum well in which product Γ·L of optical confinement constant Γ and semiconductor gain medium length L (μm) of a gain layer is at least 25 μm and at most 40 μm and in which gain peak wavelength λ0 (nm) observed during carrier injected with a maximum modal gain equal to an internal loss of the semiconductor gain medium is larger than −3·ΔR/2+(λc+35) and smaller than (−(Γ·L)/7+8)·ΔR+(−(Γ·L)+λc+45). Here, ΔR (dB) denotes a reflectance difference, and λc (nm) denotes a wavelength at a center of an operating wavelength range of the wavelength tunable laser device.
    • 本发明提供一种外部谐振器型波长可调激光器件,其即使使用涉及相当程度的残余反射的平面波长可调谐反射器也能适当地实现波长调谐功能。 外部谐振器型波长可调激光器件包括能够使反射光谱峰值波长变化的平面反射结构和半导体元件作为半导体增益介质。 半导体增益介质由多重量子阱组成,其中光学限制常数Ggr; 并且增益层的半导体增益介质长度L(μm)为至少25μm且至多40μm,并且其中以最大模态增益注入的载流子注入的增益峰值波长λ0(nm)等于半导体的内部损耗 增益介质大于-3·&Dgr; R / 2 +(λc+ 35)且小于( - (&Ggr;·L)/ 7 + 8)·&Dgr; R +( - (&Ggr;·L)+λc+ 45)。 这里,&Dgr; R(dB)表示反射率差,λc(nm)表示波长可调激光器件的工作波长范围的中心处的波长。
    • 9. 发明申请
    • EXTERNAL RESONATOR-TYPE WAVELENGTH TUNABLE LASER DEVICE
    • 外部谐振器型波长激光器激光器件
    • US20100246618A1
    • 2010-09-30
    • US12664294
    • 2008-05-22
    • Shinya SudoKenji SatoKoji KudoKenji MizutaniJan De Merlier
    • Shinya SudoKenji SatoKoji KudoKenji MizutaniJan De Merlier
    • H01S3/13
    • H01S5/141H01S5/02248H01S5/028H01S5/0287H01S5/1039
    • The present invention provides an external resonator-type wavelength tunable laser device that can properly fulfill a wavelength tuning function even with the use of a planar wavelength tunable reflector involving a considerable level of residual reflection. The external resonator-type wavelength tunable laser device includes a planar reflection structure enabling a reflection spectral peak wavelength to be varied and a semiconductor element as a semiconductor gain medium. The semiconductor gain medium is composed of a multiple quantum well in which product Γ·L of optical confinement constant Γ and semiconductor gain medium length L (μm) of a gain layer is at least 25 μm and at most 40 μm and in which gain peak wavelength λ0 (nm) observed during carrier injected with a maximum modal gain equal to an internal loss of the semiconductor gain medium is larger than −3·ΔR/2+(λc+35) and smaller than (−(Γ·L)/7+8)·ΔR+(−(Γ·L)+λc+45). Here, ΔR (dB) denotes a reflectance difference, and he (nm) denotes a wavelength at a center of an operating wavelength range of the wavelength tunable laser device.
    • 本发明提供一种外部谐振器型波长可调激光器件,其即使使用涉及相当程度的残余反射的平面波长可调谐反射器也能适当地实现波长调谐功能。 外部谐振器型波长可调激光器件包括能够使反射光谱峰值波长变化的平面反射结构和半导体元件作为半导体增益介质。 半导体增益介质由多重量子阱组成,其中光学限制常数Ggr; 并且增益层的半导体增益介质长度L(μm)为至少25μm且至多40μm,并且其中以最大模态增益注入的载流子注入的增益峰值波长λ0(nm)等于半导体的内部损耗 增益介质大于-3·&Dgr; R / 2 +(λc+ 35)且小于( - (&Ggr;·L)/ 7 + 8)·&Dgr; R +( - (&Ggr;·L)+λc+ 45)。 这里,&Dgr; R(dB)表示反射率差,he(nm)表示波长可调激光器件的工作波长范围的中心处的波长。
    • 10. 发明申请
    • Semiconductor Laser, Module and Optical Transmitter
    • 半导体激光器,模块和光发射机
    • US20090274187A1
    • 2009-11-05
    • US12086287
    • 2007-01-10
    • Koji KudoShinya SudoKenji SatoKenji Mizutani
    • Koji KudoShinya SudoKenji SatoKenji Mizutani
    • H01S5/028H01S5/026H01S5/24
    • H01S5/026
    • A semiconductor optical waveguide-A having an optical amplification function and a semiconductor optical waveguide-B having a light control function are integrated together on the same substrate. A facet of the semiconductor optical waveguide-A facing an isolation trench and a facet of the semiconductor optical waveguide-B facing the isolation trench are configured as a composite optical reflector/optical connector using an optical interference. The facet of the semiconductor optical waveguide-A achieves an optical reflectivity not higher than the reflectivity corresponding to a cleaved facet and not smaller than several percent, and an optical coupling coefficient of not lower than 50% between the semiconductor optical waveguide-A and the semiconductor optical waveguide-B.
    • 具有光放大功能的半导体光波导A和具有光控功能的半导体光波导-B一起集成在同一基板上。 面向隔离沟槽的半导体光波导A的面和面向隔离沟槽的半导体光波导-B的面被配置为使用光学干涉的复合光反射器/光连接器。 半导体光波导A的小面实现不高于对应于切割面的反射率并且不小于几个百分比的光学反射率,并且半导体光波导A与第二半导体光波导A之间的光耦合系数不低于50% 半导体光波导-B。