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1. 发明申请

US20090141747A1 EXTERNAL CAVITY WAVELENGTH TUNABLE LASER DEVICE AND OPTICAL OUTPUT MODULE 失效
标题翻译：外部波峰波长激光器件和光输出模块
公开(公告)号：US20090141747A1
公开(公告)日：2009-06-04
申请号：US11994085
申请日：2006-06-29
申请人： Kenji Sato , Jan De Merli , Kenji Mizutani , Koji Kudo , Shinya Sudo , Mads L. Nielsen
发明人： Kenji Sato , Jan De Merli , Kenji Mizutani , Koji Kudo , Shinya Sudo , Mads L. Nielsen
IPC分类号： H01S3/10
CPC分类号： H01S5/141
摘要： In an external cavity wavelength tunable laser device including an external cavity (20) which includes a semiconductor optical amplifier (2) and performs laser oscillation operation by feeding back external light, a wavelength tunable mirror (7) having at least a single-peak reflection spectrum characteristic within a laser wavelength tuning range is placed on one end of the external cavity (20), and a Fabry-Perot mode interval determined by the effective length of the external cavity (20) is not less than 1/10 times and not more than 10 times the reflection band full width half maximum of the wavelength tunable mirror (7).
摘要翻译：在包括具有半导体光放大器（2）的外部空腔（20）并通过反馈外部光进行激光振荡操作的外腔波长可调激光器件中，具有至少单峰反射的波长可调谐镜（7）在激光波长调谐范围内的光谱特性被放置在外腔（20）的一端，并且由外腔（20）的有效长度确定的法布里 - 珀罗模式间隔不小于1/10倍波长可调镜（7）的反射带全宽度的最大半数的10倍以上。

2. 发明申请

US20100111119A1 EXTERNAL RESONATOR TYPE WAVELENGTH VARIABLE SEMICONDUCTOR LASER 审中-公开
标题翻译：外部谐振器类型波长可变半导体激光器
公开(公告)号：US20100111119A1
公开(公告)日：2010-05-06
申请号：US12593513
申请日：2008-02-06
申请人： Kenji Sato , Kenji Mizutani , Shinya Sudo , Koji Kudo
发明人： Kenji Sato , Kenji Mizutani , Shinya Sudo , Koji Kudo
IPC分类号： H01S5/06 , H01S5/14
CPC分类号： H01S5/141
摘要： In an external resonator type semiconductor wavelength tunable laser apparatus using a wavelength tunable mirror or a wavelength tunable filter which uses a refractive index change of liquid crystal, a resonant frequency is set as FR, when a response of the refractive index change to a drive voltage frequency of liquid crystal becomes maximum. A frequency F1 of a drive AC power supply voltage to control the refractive index of liquid crystal is set to a frequency largely different from FR. A wavelength tunable mirror or a wavelength tunable filter is driven with a signal in which a dither AC signal F2 of a frequency close to the FR and an AC power supply voltage are superimposed. A PD to monitor a light output from the laser controls an amplitude of the drive AC power voltage such that an amplitude of the dither AC signal F2 become minimum. Thus, high laser mode stability is realized.
摘要翻译：在使用波长可调镜或使用液晶的折射率变化的波长可调滤波器的外部谐振器型半导体波长可调激光装置中，当折射率的响应变化为驱动电压时，共振频率被设定为FR 液晶的频率变得最大。控制液晶的折射率的驱动交流电源电压的频率F1被设定为与FR大不相同的频率。波长可调谐镜或波长可调滤波器由其中叠加了频率接近FR的频率抖动交流信号F2和交流电源电压的信号驱动。用于监视来自激光器的光输出的PD控制驱动AC电源电压的幅度，使得抖动AC信号F2的幅度变得最小。因此，实现了高激光模式的稳定性。

3. 发明申请

US20090257460A1 EXTERNAL RESONATOR VARIABLE WAVELENGTH LASER AND ITS PACKAGING METHOD 审中-公开
标题翻译：外部谐振器可变波长激光器及其包装方法
公开(公告)号：US20090257460A1
公开(公告)日：2009-10-15
申请号：US11995554
申请日：2006-07-13
申请人： Kenji Mizutani , Jan De Merli , Koji Kudo , Kenji Sato , Shinya Sudo
发明人： Kenji Mizutani , Jan De Merli , Koji Kudo , Kenji Sato , Shinya Sudo
IPC分类号： H01S3/10 , H01S3/00
CPC分类号： H01S5/141 , H01S5/028 , H01S5/0287 , H01S5/0625 , H01S5/0687 , H01S5/142
摘要： The reflectance of a semiconductor optical amplifier (1) on the side where an external cavity is formed is 0.1% at most. The finesse value obtained by dividing the period of the transmission characteristic of the wavelength selection filter (3) by the half value width of the transmission characteristic is 4 or more and 25 or less. Even when the reflectance of a cavity side end face (1bb) of the semiconductor optical amplifier (1) is about 0.1%, a wavelength accuracy of ±1.5 GHz can be achieved by setting the finesse to 4 or more. In addition, a wavelength accuracy of about ±0.5 GHz can be achieved by setting the finesse to 8 or more. In order to suppress insertion loss, it is preferable to set the finesse of the FP etalon to 25 or less. This makes it possible to implement an external cavity wavelength tunable laser with high wavelength accuracy.
摘要翻译：半导体光放大器（1）在形成外部空腔的一侧的反射率最多为0.1％。通过将波长选择滤波器（3）的传输特性的周期除以传输特性的半值宽度获得的精细度值为4以上且25以下。即使当半导体光放大器（1）的腔侧端面（1bb）的反射率为约0.1％时，通过将精细度设定为4以上可以实现±1.5GHz的波长精度。此外，通过将精细度设定为8以上可以实现约±0.5GHz的波长精度。为了抑制插入损耗，优选将FP标准具的精细度设定为25以下。这使得可以实现具有高波长精度的外部腔波长可调谐激光器。

4. 发明授权

US08457168B2 Semiconductor laser, module and optical transmitter 失效
标题翻译：半导体激光器，模块和光发射机
公开(公告)号：US08457168B2
公开(公告)日：2013-06-04
申请号：US12086287
申请日：2007-01-10
申请人： Koji Kudo , Shinya Sudo , Kenji Sato , Kenji Mizutani
发明人： Koji Kudo , Shinya Sudo , Kenji Sato , Kenji Mizutani
IPC分类号： H01S5/00
CPC分类号： H01S5/026
摘要： A semiconductor optical waveguide-A having an optical amplification function and a semiconductor optical waveguide-B having a light control function are integrated together on the same substrate. A facet of the semiconductor optical waveguide-A facing an isolation trench and a facet of the semiconductor optical waveguide-B facing the isolation trench are configured as a composite optical reflector/optical connector using an optical interference. The facet of the semiconductor optical waveguide-A achieves an optical reflectivity not higher than the reflectivity corresponding to a cleaved facet and not smaller than several percent, and an optical coupling coefficient of not lower than 50% between the semiconductor optical waveguide-A and the semiconductor optical waveguide-B.
摘要翻译：具有光放大功能的半导体光波导A和具有光控功能的半导体光波导-B一起集成在同一基板上。面向隔离沟槽的半导体光波导A的面和面向隔离沟槽的半导体光波导-B的面被配置为使用光学干涉的复合光反射器/光连接器。半导体光波导A的小面实现不高于对应于切割面的反射率并且不小于几个百分比的光学反射率，并且半导体光波导A与第二半导体光波导A之间的光耦合系数不低于50％半导体光波导-B。

5. 发明授权

US07991024B2 External cavity wavelength tunable laser device and optical output module 失效
标题翻译：外腔波长可调激光器件和光输出模块
公开(公告)号：US07991024B2
公开(公告)日：2011-08-02
申请号：US11994085
申请日：2006-06-29
申请人： Kenji Sato , Jan De Merli , Kenji Mizutani , Koji Kudo , Shinya Sudo , Mads. L Nielsen
发明人： Kenji Sato , Jan De Merli , Kenji Mizutani , Koji Kudo , Shinya Sudo , Mads. L Nielsen
IPC分类号： H01S3/13 , H01S3/08
CPC分类号： H01S5/141
摘要： In an external cavity wavelength tunable laser device including an external cavity (20) which includes a semiconductor optical amplifier (2) and performs laser oscillation operation by feeding back external light, a wavelength tunable mirror (7) having at least a single-peak reflection spectrum characteristic within a laser wavelength tuning range is placed on one end of the external cavity (20), and a Fabry-Perot mode interval determined by the effective length of the external cavity (20) is not less than 1/10 times and not more than 10 times the reflection band full width half maximum of the wavelength tunable mirror (7).
摘要翻译：在包括具有半导体光放大器（2）的外部空腔（20）并通过反馈外部光进行激光振荡操作的外腔波长可调激光器件中，具有至少单峰反射的波长可调谐镜（7）在激光波长调谐范围内的光谱特性被放置在外腔（20）的一端，并且由外腔（20）的有效长度确定的法布里 - 珀罗模式间隔不小于1/10倍波长可调镜（7）的反射带全宽度的最大半数的10倍以上。

6. 发明申请

US20090122817A1 VARIABLE-WAVELENGTH FILTER AND VARIABLE-WAVELENGTH LASER 审中-公开
标题翻译：可变波长滤波器和可变波长激光器
公开(公告)号：US20090122817A1
公开(公告)日：2009-05-14
申请号：US12064441
申请日：2006-09-04
申请人： Kenji Sato , Jan De Merli , Kenji Mizutani , Shinya Sudo , Koji Kudo , Hiroyuki Yamazaki
发明人： Kenji Sato , Jan De Merli , Kenji Mizutani , Shinya Sudo , Koji Kudo , Hiroyuki Yamazaki
IPC分类号： H01S3/10 , G02B6/10
CPC分类号： G02B6/12007 , G02F1/313 , G02F2203/15 , G02F2203/585 , H01S5/02248 , H01S5/0687 , H01S5/101 , H01S5/1032 , H01S5/142
摘要： Only the light at an overlapping wavelength of the transmission characteristics of at least two wavelength selecting filters is looped, and at least one of the wavelength selecting filters varies a selected wavelength. Since a loss due to the optical filters is small and there is not a loss caused by a highly reflecting film, the output of an external-resonator variable-wavelength laser can be increased. Optical circuit component (8) divides light input from external device (1) into at least two ports. Loop waveguide (11) interconnects at least ports (9, 10) divided by optical circuit component (8) in the form of a loop. At least two first wavelength selecting filters (12, 13) are inserted in series in a path of loop waveguide (11), and have periodic transmission characteristics on a frequency axis which are different from each other. At least one of first wavelength selecting filters (12, 13) varies the selected wavelength.
摘要翻译：只有至少两个波长选择滤波器的传输特性的重叠波长的光被环绕，并且至少一个波长选择滤波器改变选定的波长。由于由于滤光器引起的损耗小，并且不会由高反射膜引起的损耗，所以可以增加外部谐振器可变波长激光器的输出。光电路部件（8）将从外部设备（1）输入的光分成至少两个端口。环形波导（11）至少以循环形式的由光电路部件（8）划分的端口（9,10）互连。至少两个第一波长选择滤波器（12,13）串联插入到环形波导（11）的路径中，并且在频率轴上具有彼此不同的周期性传输特性。第一波长选择滤光器（12,13）中的至少一个改变所选择的波长。

7. 发明授权

US08189631B2 External resonator-type wavelength tunable laser device 有权
标题翻译：外部谐振器型波长可调激光器件
公开(公告)号：US08189631B2
公开(公告)日：2012-05-29
申请号：US12664294
申请日：2008-05-22
申请人： Shinya Sudo , Kenji Sato , Koji Kudo , Kenji Mizutani , Jan De Merlier
发明人： Shinya Sudo , Kenji Sato , Koji Kudo , Kenji Mizutani , Jan De Merlier
IPC分类号： H01S3/13
CPC分类号： H01S5/141 , H01S5/02248 , H01S5/028 , H01S5/0287 , H01S5/1039
摘要： The present invention provides an external resonator-type wavelength tunable laser device that can properly fulfill a wavelength tuning function even with the use of a planar wavelength tunable reflector involving a considerable level of residual reflection. The external resonator-type wavelength tunable laser device includes a planar reflection structure enabling a reflection spectral peak wavelength to be varied and a semiconductor element as a semiconductor gain medium. The semiconductor gain medium is composed of a multiple quantum well in which product Γ·L of optical confinement constant Γ and semiconductor gain medium length L (μm) of a gain layer is at least 25 μm and at most 40 μm and in which gain peak wavelength λ0 (nm) observed during carrier injected with a maximum modal gain equal to an internal loss of the semiconductor gain medium is larger than −3·ΔR/2+(λc+35) and smaller than (−(Γ·L)/7+8)·ΔR+(−(Γ·L)+λc+45). Here, ΔR (dB) denotes a reflectance difference, and λc (nm) denotes a wavelength at a center of an operating wavelength range of the wavelength tunable laser device.
摘要翻译：本发明提供一种外部谐振器型波长可调激光器件，其即使使用涉及相当程度的残余反射的平面波长可调谐反射器也能适当地实现波长调谐功能。外部谐振器型波长可调激光器件包括能够使反射光谱峰值波长变化的平面反射结构和半导体元件作为半导体增益介质。半导体增益介质由多重量子阱组成，其中光学限制常数Ggr; 并且增益层的半导体增益介质长度L（μm）为至少25μm且至多40μm，并且其中以最大模态增益注入的载流子注入的增益峰值波长λ0（nm）等于半导体的内部损耗增益介质大于-3·＆Dgr; R / 2 +（λc+ 35）且小于（ - （＆Ggr;·L）/ 7 + 8）·＆Dgr; R +（ - （＆Ggr;·L）+λc+ 45）。这里，＆Dgr; R（dB）表示反射率差，λc（nm）表示波长可调激光器件的工作波长范围的中心处的波长。

8. 发明授权

US08144738B2 External cavity wavelength tunable laser device and optical output module 失效
标题翻译：外腔波长可调激光器件和光输出模块
公开(公告)号：US08144738B2
公开(公告)日：2012-03-27
申请号：US13165288
申请日：2011-06-21
申请人： Kenji Sato , Jan De Merli , Kenji Mizutani , Koji Kudo , Shinya Sudo , Mads L. Nielsen
发明人： Kenji Sato , Jan De Merli , Kenji Mizutani , Koji Kudo , Shinya Sudo , Mads L. Nielsen
IPC分类号： H01S3/10 , H01S3/08
CPC分类号： H01S5/141
摘要： In an external cavity wavelength tunable laser device including an external cavity (20) which includes a semiconductor optical amplifier (2) and performs laser oscillation operation by feeding back external light, a wavelength tunable mirror (7) having at least a single peak reflection spectrum characteristic within a laser wavelength tuning range is placed on one end of the external cavity (20), and a Fabry Perot mode interval determined by the effective length of the external cavity (20) is not less than 1/10 times and not more than 10 times the reflection band full width half maximum of the wavelength tunable mirror (7).
摘要翻译：在包括具有半导体光放大器（2）的外部空腔（20）并通过反馈外部光进行激光振荡操作的外腔波长可调激光器件中，具有至少一个单峰反射光谱的波长可调谐镜（7）在激光波长调谐范围内的特征放置在外腔（20）的一端，由外腔（20）的有效长度确定的法布里珀罗模式间隔不小于1/10倍，不大于 10倍波长可调镜（7）的反射带全宽半最大值。

9. 发明申请

US20100246618A1 EXTERNAL RESONATOR-TYPE WAVELENGTH TUNABLE LASER DEVICE 有权
标题翻译：外部谐振器型波长激光器激光器件
公开(公告)号：US20100246618A1
公开(公告)日：2010-09-30
申请号：US12664294
申请日：2008-05-22
申请人： Shinya Sudo , Kenji Sato , Koji Kudo , Kenji Mizutani , Jan De Merlier
发明人： Shinya Sudo , Kenji Sato , Koji Kudo , Kenji Mizutani , Jan De Merlier
IPC分类号： H01S3/13
CPC分类号： H01S5/141 , H01S5/02248 , H01S5/028 , H01S5/0287 , H01S5/1039
摘要： The present invention provides an external resonator-type wavelength tunable laser device that can properly fulfill a wavelength tuning function even with the use of a planar wavelength tunable reflector involving a considerable level of residual reflection. The external resonator-type wavelength tunable laser device includes a planar reflection structure enabling a reflection spectral peak wavelength to be varied and a semiconductor element as a semiconductor gain medium. The semiconductor gain medium is composed of a multiple quantum well in which product Γ·L of optical confinement constant Γ and semiconductor gain medium length L (μm) of a gain layer is at least 25 μm and at most 40 μm and in which gain peak wavelength λ0 (nm) observed during carrier injected with a maximum modal gain equal to an internal loss of the semiconductor gain medium is larger than −3·ΔR/2+(λc+35) and smaller than (−(Γ·L)/7+8)·ΔR+(−(Γ·L)+λc+45). Here, ΔR (dB) denotes a reflectance difference, and he (nm) denotes a wavelength at a center of an operating wavelength range of the wavelength tunable laser device.
摘要翻译：本发明提供一种外部谐振器型波长可调激光器件，其即使使用涉及相当程度的残余反射的平面波长可调谐反射器也能适当地实现波长调谐功能。外部谐振器型波长可调激光器件包括能够使反射光谱峰值波长变化的平面反射结构和半导体元件作为半导体增益介质。半导体增益介质由多重量子阱组成，其中光学限制常数Ggr; 并且增益层的半导体增益介质长度L（μm）为至少25μm且至多40μm，并且其中以最大模态增益注入的载流子注入的增益峰值波长λ0（nm）等于半导体的内部损耗增益介质大于-3·＆Dgr; R / 2 +（λc+ 35）且小于（ - （＆Ggr;·L）/ 7 + 8）·＆Dgr; R +（ - （＆Ggr;·L）+λc+ 45）。这里，＆Dgr; R（dB）表示反射率差，he（nm）表示波长可调激光器件的工作波长范围的中心处的波长。

10. 发明申请

US20090274187A1 Semiconductor Laser, Module and Optical Transmitter 失效
标题翻译：半导体激光器，模块和光发射机
公开(公告)号：US20090274187A1
公开(公告)日：2009-11-05
申请号：US12086287
申请日：2007-01-10
申请人： Koji Kudo , Shinya Sudo , Kenji Sato , Kenji Mizutani
发明人： Koji Kudo , Shinya Sudo , Kenji Sato , Kenji Mizutani
IPC分类号： H01S5/028 , H01S5/026 , H01S5/24
CPC分类号： H01S5/026
摘要： A semiconductor optical waveguide-A having an optical amplification function and a semiconductor optical waveguide-B having a light control function are integrated together on the same substrate. A facet of the semiconductor optical waveguide-A facing an isolation trench and a facet of the semiconductor optical waveguide-B facing the isolation trench are configured as a composite optical reflector/optical connector using an optical interference. The facet of the semiconductor optical waveguide-A achieves an optical reflectivity not higher than the reflectivity corresponding to a cleaved facet and not smaller than several percent, and an optical coupling coefficient of not lower than 50% between the semiconductor optical waveguide-A and the semiconductor optical waveguide-B.
摘要翻译：具有光放大功能的半导体光波导A和具有光控功能的半导体光波导-B一起集成在同一基板上。面向隔离沟槽的半导体光波导A的面和面向隔离沟槽的半导体光波导-B的面被配置为使用光学干涉的复合光反射器/光连接器。半导体光波导A的小面实现不高于对应于切割面的反射率并且不小于几个百分比的光学反射率，并且半导体光波导A与第二半导体光波导A之间的光耦合系数不低于50％半导体光波导-B。

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