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1. 发明授权

US08482817B2 Image reading apparatus and method for controlling the same 有权
标题翻译：图像读取装置及其控制方法
公开(公告)号：US08482817B2
公开(公告)日：2013-07-09
申请号：US12766462
申请日：2010-04-23
申请人： Kenji Kubozono , Yasuyuki Shinada
发明人： Kenji Kubozono , Yasuyuki Shinada
IPC分类号： H04N1/04 , H04N1/21 , H04N1/46 , H04N1/36 , H04N1/393 , G06F3/12 , H04B10/00 , G03G9/08 , B41J2/435 , G01J1/32 , H01J3/14 , G05F3/04
CPC分类号： H04N1/02815 , H04N1/00978 , H04N1/00997 , H04N1/0282 , H04N1/02835 , H04N1/40056
摘要： An image reading apparatus capable of reading documents includes a reading unit including a light emitting element, a mechanism configured to move the reading unit, and a control unit configured to control the reading unit and the mechanism both to carry out reading by turning on the light emitting element and moving the reading unit and to temporarily stop moving the reading unit upon occurrence of a predetermined factor. The control unit sets a first current value which is caused to flow through the light emitting element when reading is carried out and sets a second current value which is less than the first current value and which is caused to flow through the light emitting element when the reading unit is temporarily stopped.
摘要翻译：能够读取文件的图像读取装置包括：读取单元，包括发光元件，被配置为移动读取单元的机构;以及控制单元，被配置为控制读取单元和机构，以通过打开光来执行读取并且在发生预定因素时移动读取单元并暂时停止移动读取单元。控制单元设置在执行读取时被引导通过发光元件的第一电流值，并且设定小于第一电流值的第二电流值，并且当第二电流值流过发光元件时阅读单位暂时停止。

2. 发明申请

US20100315690A1 IMAGE READING APPARATUS AND METHOD FOR CONTROLLING THE SAME 有权
标题翻译：图像读取装置及其控制方法
公开(公告)号：US20100315690A1
公开(公告)日：2010-12-16
申请号：US12766462
申请日：2010-04-23
申请人： Kenji Kubozono , Yasuyuki Shinada
发明人： Kenji Kubozono , Yasuyuki Shinada
IPC分类号： H04N1/04
CPC分类号： H04N1/02815 , H04N1/00978 , H04N1/00997 , H04N1/0282 , H04N1/02835 , H04N1/40056
摘要： An image reading apparatus capable of reading documents includes a reading unit including a light emitting element, a mechanism configured to move the reading unit, and a control unit configured to control the reading unit and the mechanism both to carry out reading by turning on the light emitting element and moving the reading unit and to temporarily stop moving the reading unit upon occurrence of a predetermined factor. The control unit sets a first current value which is caused to flow through the light emitting element when reading is carried out and sets a second current value which is less than the first current value and which is caused to flow through the light emitting element when the reading unit is temporarily stopped.
摘要翻译：能够读取文件的图像读取装置包括：读取单元，包括发光元件，被配置为移动读取单元的机构;以及控制单元，被配置为控制读取单元和机构，以通过打开光来执行读取并且在发生预定因素时移动读取单元并暂时停止移动读取单元。控制单元设置在执行读取时被引导通过发光元件的第一电流值，并且设定小于第一电流值的第二电流值，并且当第二电流值流过发光元件时阅读单位暂时停止。

3. 发明授权

US08553298B2 Sensor and sensor control method 有权
标题翻译：传感器和传感器控制方式
公开(公告)号：US08553298B2
公开(公告)日：2013-10-08
申请号：US13090087
申请日：2011-04-19
申请人： Kenji Kubozono , Takahiro Ode
发明人： Kenji Kubozono , Takahiro Ode
IPC分类号： H04N1/04
CPC分类号： H04N1/02805 , H04N1/1017 , H04N5/361 , H04N5/3692
摘要： A sensor includes a photoelectric conversion unit including a first photoelectric conversion element array and a second photoelectric conversion element array, each having an array of a plurality of photoelectric conversion elements arranged in a predetermined direction, a storage unit configured to store a charge generated by the photoelectric conversion unit, a transfer unit configured to transfer the charge generated by the photoelectric conversion unit to an outside of the sensor, a control unit configured to serially execute a first transfer control for transporting unit configured to transport a charge stored in the second photoelectric conversion element array to the transfer unit via the storage unit and a second transfer control for transporting unit configured to transport a charge stored in the first photoelectric conversion element array to the transfer unit via the second photoelectric conversion element array and the storage unit.
摘要翻译：传感器包括：光电转换单元，包括第一光电转换元件阵列和第二光电转换元件阵列，每个具有沿预定方向布置的多个光电转换元件的阵列;存储单元，被配置为存储由光电转换单元，被配置为将由光电转换单元生成的电荷传送到传感器的外部的传送单元，被配置为串行地执行传输单元的第一传送控制，该第一传送控制被配置为传送存储在第二光电转换中的电荷元件阵列经由存储单元传送到传送单元，以及用于传送单元的第二传送控制器，其被配置为经由第二光电转换元件阵列和存储单元将存储在第一光电转换元件阵列中的电荷传送到传送单元。

4. 发明申请

US20110261421A1 SENSOR AND SENSOR CONTROL METHOD 有权
标题翻译：传感器和传感器控制方法
公开(公告)号：US20110261421A1
公开(公告)日：2011-10-27
申请号：US13090087
申请日：2011-04-19
申请人： Kenji Kubozono , Takahiro Ode
发明人： Kenji Kubozono , Takahiro Ode
IPC分类号： H04N1/04
CPC分类号： H04N1/02805 , H04N1/1017 , H04N5/361 , H04N5/3692
摘要： A sensor includes a photoelectric conversion unit including a first photoelectric conversion element array and a second photoelectric conversion element array, each having an array of a plurality of photoelectric conversion elements arranged in a predetermined direction, a storage unit configured to store a charge generated by the photoelectric conversion unit, a transfer unit configured to transfer the charge generated by the photoelectric conversion unit to an outside of the sensor, a control unit configured to serially execute a first transfer control for transporting unit configured to transport a charge stored in the second photoelectric conversion element array to the transfer unit via the storage unit and a second transfer control for transporting unit configured to transport a charge stored in the first photoelectric conversion element array to the transfer unit via the second photoelectric conversion element array and the storage unit.
摘要翻译：传感器包括：光电转换单元，包括第一光电转换元件阵列和第二光电转换元件阵列，每个具有沿预定方向布置的多个光电转换元件的阵列;存储单元，被配置为存储由光电转换单元，被配置为将由光电转换单元生成的电荷传送到传感器的外部的传送单元，被配置为串行地执行传输单元的第一传送控制，该第一传送控制被配置为传送存储在第二光电转换中的电荷元件阵列经由存储单元传送到传送单元，以及用于传送单元的第二传送控制器，其被配置为经由第二光电转换元件阵列和存储单元将存储在第一光电转换元件阵列中的电荷传送到传送单元。

5. 发明授权

US5833920A Copper alloy for electronic parts, lead-frame, semiconductor device and connector 失效
标题翻译：铜合金用于电子零件，引线框架，半导体器件和连接器
公开(公告)号：US5833920A
公开(公告)日：1998-11-10
申请号：US802868
申请日：1997-02-19
申请人： Teruo Nakanishi , Akira Maeda , Mikio Watanabe , Toshikazu Kawahata , Toshihiro Kurita , Kenji Kubozono
发明人： Teruo Nakanishi , Akira Maeda , Mikio Watanabe , Toshikazu Kawahata , Toshihiro Kurita , Kenji Kubozono
IPC分类号： C22C9/06 , H01B1/02 , H01B1/00
CPC分类号： H01L24/85 , C22C9/06 , H01B1/026 , H01L23/49513 , H01L23/49579 , H01L24/32 , H01L24/48 , H01L24/83 , H01L2224/29111 , H01L2224/2919 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48463 , H01L2224/48599 , H01L2224/48639 , H01L2224/49171 , H01L2224/73265 , H01L2224/83439 , H01L2224/83801 , H01L2224/85201 , H01L2224/85203 , H01L2224/85439 , H01L24/45 , H01L24/49 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01039 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01327 , H01L2924/0133 , H01L2924/014 , H01L2924/078 , H01L2924/14 , H01L2924/15747 , H01L2924/181
摘要： The present invention provides a copper alloy for electronic part which is excellent in adhesion of silver(Ag) and reliability of solderability and adhesion of plating without impairing excellent strength and electrical conductivity of a copper-nickel-silicon alloy. The copper alloy for electronic parts in the present invention consist essentially of 1.7 to 4.0% by weight of nickel, 0.3 to 0.8% by weight of silicon, 0.002 to 0.3% by weight of silver, 0.5 to 2.0% by weight of zinc, and a residual of copper.
摘要翻译：本发明提供了一种电子部件用铜合金，其具有优异的银（Ag）粘合性，可焊性和电镀附着性，而不损害铜镍硅合金的优异强度和导电性。本发明的电子部件用铜合金基本上由1.7〜4.0重量％的镍，0.3〜0.8重量％的硅，0.002〜0.3重量％的银，0.5〜2.0重量％的锌和铜的残留。

6. 发明授权

US5248351A Copper Ni-Si-P alloy for an electronic device 失效
标题翻译：用于电子器件的铜镍硅合金
公开(公告)号：US5248351A
公开(公告)日：1993-09-28
申请号：US835082
申请日：1992-02-18
申请人： Kenji Kubozono , Takashi Nakagima , Takefumi Itou , Kimio Hashizume , Shinichi Iwase
发明人： Kenji Kubozono , Takashi Nakagima , Takefumi Itou , Kimio Hashizume , Shinichi Iwase
IPC分类号： C22C9/06 , H01L21/48 , H01L23/495
CPC分类号： H01L23/49579 , C22C9/06 , H01L21/4821 , H01L2924/00011 , H01L2924/0002 , H01L2924/01015
摘要： A copper alloy for an electronic device comprises 2.0 wt% -8 wt% of Ni, 0.1 wt% -0.8 wt% of P, 0.06 wt% -1 wt% of Si and the rest being Cu and unavoidable impurities.The rest may include 0.03 wt% -2.0 wt% of Zn. The copper allow has an oxygen content of 20 ppm or less.
摘要翻译：用于电子器件的铜合金包括2.0重量％-8重量％的Ni，0.1重量％-0.8重量％的P，0.06重量％-1重量％的Si，其余为Cu和不可避免的杂质。其余的可以包括0.03wt％-2.0wt％的Zn。铜允许的氧含量为20ppm以下。

7. 发明授权

US5373890A Horizontal continuous casting method and its device 失效
标题翻译：水平连铸法及其装置
公开(公告)号：US5373890A
公开(公告)日：1994-12-20
申请号：US162803
申请日：1993-12-07
申请人： Yoshihiro Taketsu , Eichi Miyazu , Iwao Asamizu , Naotake Wada , Kenji Kubozono
发明人： Yoshihiro Taketsu , Eichi Miyazu , Iwao Asamizu , Naotake Wada , Kenji Kubozono
IPC分类号： B22D11/04 , B22D11/047 , B22D11/18 , B22D11/10
CPC分类号： B22D11/047
摘要： A molten metal stored in a heat-reserving furnace is maintained at a constant temperature by heating the molten metal by a heating source. The molten metal in the heat-reserving furnace is then introduced into a mold by passing the molten metal through a gate made of a refractory with the molten metal then passed through a casting space in the horizontal direction, to thereby cast a cast block.
摘要翻译：储存在储热炉中的熔融金属通过加热源将熔融金属加热而保持在恒定温度。然后通过使熔融金属通过熔融金属制成的由耐火材料制成的浇口，然后在水平方向上通过铸造空间，将储热炉中的熔融金属引入模具中，从而铸造铸块。

8. 发明授权

US5019185A Method for producing high strength Cu-Ni-Sn alloy containing manganese 失效
标题翻译：含有锰的高强度Cu-Ni-Sn合金的制造方法
公开(公告)号：US5019185A
公开(公告)日：1991-05-28
申请号：US436737
申请日：1989-11-15
申请人： Takashi Nakajima , Kenji Kubozono , Toshihiko Mori , Takefumi Ito , Kimio Hashitsume , Shinichi Iwase
发明人： Takashi Nakajima , Kenji Kubozono , Toshihiko Mori , Takefumi Ito , Kimio Hashitsume , Shinichi Iwase
IPC分类号： C22C9/06 , C22F1/00 , C22F1/08
CPC分类号： C22F1/08 , C22C9/06
摘要： A high strength Cu-Ni-Sn alloy, comprising 3-25% Ni, 3-9% Sn, 0.05-1.5% Mn, balance Cu, is heated to a temperature of 800.degree. C. or above in a single-phase region. This heat treatment is followed by quenching and subsequent heating at a temperature range of 600.degree.-770.degree. C. in a two-phase region, followed by quenching and a finishing process with a ratio of 0-60%. Thereafter, the processed alloy is subjected to a final heat-treatment at a temperature of 350.degree.-500.degree. C.
摘要翻译：将包含3-25％Ni，3-9％Sn，0.05-1.5％Mn余量Cu的高强度Cu-Ni-Sn合金在单相区域中加热到800℃以上的温度。进行该热处理后，在600℃-770℃的温度范围内淬火，随后在两相区域中进行加热，然后以0-60％的比例淬火和精加工。然后，将处理后的合金在350〜-500℃的温度下进行最终的热处理。

9. 发明授权

US5028282A Cu-Ni-Sn alloy with excellent fatigue properties 失效
标题翻译： Cu-Ni-Sn合金具有优异的疲劳性能
公开(公告)号：US5028282A
公开(公告)日：1991-07-02
申请号：US462352
申请日：1990-01-03
申请人： Kenji Kubozono , Kimio Hashizume , Teruo Nakanishi
发明人： Kenji Kubozono , Kimio Hashizume , Teruo Nakanishi
IPC分类号： C22C9/06 , C22F1/00 , C22F1/08
CPC分类号： C22C9/06
摘要： A Cu-Ni-Sn alloy with excellent fatigue properties comprising 6 to 25 wt % of Ni, 4 to 9 wt % of Sn, 0.04 to 5 wt % in total of at least one element selected from the following elements:Zn . . . 0.03-4 wt %, Zr . . . 0.01-0.2 wt %,Mn . . . 0.03-1.5 wt %, Fe . . . 0.03-0.7 wt %,Mg . . . 0.03-0.5 wt %, P . . . 0.01-0.5 wt %,Ti . . . 0.03-0.7 wt %, B . . . 0.001-0.1 wt %,Cr . . . 0.03-0.7 wt %, Co . . . 0.01-0.5 wt %,and the rest being substantially Cu, and subjected, before final finish working, to heat treatment for structure arrangement at a temperature of 500.degree. to 770.degree. C., then to finish working of at most 50%, followed by age treatment at a temperature of 350.degree. to 500.degree. C. for 3 to 300 minutes.
摘要翻译：具有优异的疲劳特性的Cu-Ni-Sn合金，其包含6〜25重量％的Ni，4〜9重量％的Sn，0.04〜5重量％的总计为至少一种选自以下元素的元素：Zn。。。 0.03-4重量％，Zr。。。 0.01-0.2重量％，Mn。。。 0.03-1.5重量％，Fe。。。 0.03-0.7重量％，Mg。。。 0.03-0.5重量％，P。。。 0.01-0.5重量％，Ti。。。 0.03-0.7重量％，B。。。 0.001-0.1重量％，Cr。。。 0.03-0.7重量％。。 0.01-0.5重量％，其余为基本上Cu，并在最终加工前进行500〜770℃的结构排列的热处理，然后完成最多50％的加工，其次为在350〜500℃的温度下进行3〜300分钟的老化处理。

10. 发明授权

US4950451A Copper alloy for an electronic device and method of preparing the same 失效
标题翻译：电子器件用铜合金及其制备方法
公开(公告)号：US4950451A
公开(公告)日：1990-08-21
申请号：US326645
申请日：1989-03-21
申请人： Takashi Nakajima , Kenji Kubozono , Takefumi Itou , Kimio Hashizume , Shinichi Iwase
发明人： Takashi Nakajima , Kenji Kubozono , Takefumi Itou , Kimio Hashizume , Shinichi Iwase
IPC分类号： C22C9/04 , C22C9/06
CPC分类号： C22C9/06 , C22C9/04
摘要： A copper alloy for an electronic device comprises 1.0 wt %-4.0 wt % of Ni, more than 0.2 wt % and less than 0.8 wt % of P, 0.5 wt %-6.0 wt % of Zn and the rest being copper and unavoidable impurities. The rest may include 0.05 wt %-1.0 wt % of Mg.A wire of the above-mentioned copper alloy is prepared by heating the copper alloy having the composition described above at temperature of 750.degree. C.-950.degree. C. for more than one minute before the final rolling operation, and then, heating the material at a temperature of 350.degree. C.-500.degree. C., or slowly cooling it at a rate of 4.degree. C./min. or less, or cooling it at a rate of 1.degree. C./min. or more until temperature reaches 500.degree. C. and keeping its temperature for at least one hour in a temperature range of 500.degree. C.-350.degree. C.
摘要翻译：用于电子器件的铜合金包括1.0重量％-4.0重量％的Ni，大于0.2重量％且小于0.8重量％的P，0.5重量％-6.0重量％的Zn，其余为铜和不可避免的杂质。其余的可以包括0.05wt％-1.0wt％的Mg。通过在最终轧制操作之前将具有上述组成的铜合金在750℃-950℃的温度下加热超过1分钟来制备上述铜合金的线材，然后加热材料在350℃-500℃的温度下，或以4℃/ min的速度缓慢冷却。或更低，或以1℃/ min的速率冷却。或更高，直到温度达到500℃，并将其温度保持在500℃-350℃的温度范围内至少1小时。

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