会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 3. 发明授权
    • Evaluation mask, focus measuring method and aberration measuring method
    • 评估面膜,聚焦测量方法和像差测量方法
    • US06940585B2
    • 2005-09-06
    • US10657251
    • 2003-09-09
    • Hiroshi NomuraKenji Konomi
    • Hiroshi NomuraKenji Konomi
    • G01B11/00G01M11/02G03F1/44G03F7/20G03F7/207H01L21/027G03B27/52G03B27/32G03B25/42
    • G03F7/706G03F7/70641
    • An evaluation mask for evaluating a projection-type exposure apparatus, the mask including at least one diffraction grating pattern for producing a diffracted light of the positive first-order and a diffracted light of negative first-order, diffraction efficiencies of the diffracted lights being different respectively, one of the diffracted lights having a magnitude that is zero, and an image of the at least one diffraction grating pattern being projected onto a test substrate by the projection-type exposure apparatus, and a reference pattern for obtaining a reference image to measure a displacement of the image of the diffraction grating pattern, and an image of the reference pattern being projected onto the test substrate or the image detector by the projection-type exposure apparatus, wherein the images of the diffraction grating pattern and the reference pattern projected onto the test substrate or the image detector are used for evaluating the projection-type exposure apparatus.
    • 用于评估投影型曝光装置的评估掩模,所述掩模包括至少一个用于产生正一级的衍射光的衍射光栅图案和负一级的衍射光,衍射光的衍射效率不同 分别具有大小为零的衍射光中的一个,并且通过投影型曝光装置将至少一个衍射光栅图案的图像投影到测试基板上,以及用于获得用于测量的参考图像的参考图案 衍射光栅图案的图像的位移和通过投影型曝光装置投影到测试基板或图像检测器上的参考图案的图像,其中衍射光栅图案和参考图案的图像投影到 使用测试基板或图像检测器来评估投影型曝光装置。
    • 5. 发明授权
    • Evaluation mask, focus measuring method and aberration measuring method
    • 评估面膜,聚焦测量方法和像差测量方法
    • US06674511B2
    • 2004-01-06
    • US09923443
    • 2001-08-08
    • Hiroshi NomuraKenji Konomi
    • Hiroshi NomuraKenji Konomi
    • G03B2752
    • G03F7/706G03F7/70641
    • An evaluation mask for evaluating a projection-type exposure apparatus, the mask including at least one diffraction grating pattern for producing a diffracted light of the positive first-order and a diffracted light of negative first-order, diffraction efficiencies of the diffracted lights being different respectively, one of the diffracted lights having a magnitude that is zero, and an image of the at least one diffraction grating pattern being projected onto a test substrate by the projection-type exposure apparatus, and a reference pattern for obtaining a reference image to measure a displacement of the image of the diffraction grating pattern, and an image of the reference pattern being projected onto the test substrate or the image detector by the projection-type exposure apparatus, wherein the images of the diffraction grating pattern and the reference pattern projected onto the test substrate or the image detector are used for evaluating the projection-type exposure apparatus.
    • 用于评估投影型曝光装置的评估掩模,所述掩模包括至少一个用于产生正一级的衍射光的衍射光栅图案和负一级的衍射光,衍射光的衍射效率不同 分别具有大小为零的衍射光中的一个,并且通过投影型曝光装置将至少一个衍射光栅图案的图像投影到测试基板上,以及用于获得用于测量的参考图像的参考图案 衍射光栅图案的图像的位移和通过投影型曝光装置投影到测试基板或图像检测器上的参考图案的图像,其中衍射光栅图案和参考图案的图像投影到 使用测试基板或图像检测器来评估投影型曝光装置。
    • 10. 发明申请
    • METHOD AND SYSTEM FOR LEVELING TOPOGRAPHY OF SEMICONDUCTOR CHIP SURFACE
    • 用于层次半导体芯片表面的方法和系统
    • US20090190108A1
    • 2009-07-30
    • US12022560
    • 2008-01-30
    • Tatsuhiko EmaKenji Konomi
    • Tatsuhiko EmaKenji Konomi
    • G03B27/42G03B27/68
    • G03B27/42G03B27/68G03F7/70258G03F7/70641G03F7/70783
    • A system and method of leveling the topography of a semiconductor wafer surface is presented. The system may induce low-order lens aberration to control the focal plane dynamically. The system may include a leveling sensor which measures the changes in topography on the surface, as well as an analyzer to determine the aberration to be induced. In addition, the system may include a controller that dynamically adjusts at least one lens to induce such aberration. In another arrangement, the system may control the focal plane by dividing the exposure slit into smaller slits. In this arrangement, the analyzer may be used to determine the appropriate number of divisions to make to produce a focal plane that closely matches the surface of the wafer. In addition, the controller may adjust the stage height and tilt for each division to produce such a focal plane.
    • 提出了一种调整半导体晶片表面形貌的系统和方法。 该系统可能会诱发低阶透镜像差来动态控制焦平面。 该系统可以包括测量表面上的形貌变化的调平传感器,以及用于确定要感应的像差的分析器。 另外,该系统可以包括一个控制器,该控制器动态地调整至少一个透镜以引起这种像差。 在另一种布置中,系统可以通过将曝光狭缝分成更小的狭缝来控制焦平面。 在这种布置中,分析器可以用于确定适当数量的分割以产生与晶片表面紧密匹配的焦平面。 此外,控制器可以调整每个分区的平台高度和倾斜度以产生这样的焦平面。