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1. 发明申请

US20090149032A1 Method for manufacturing semiconductor device and substrate processing apparatus 审中-公开
标题翻译：半导体装置及基板处理装置的制造方法
公开(公告)号：US20090149032A1
公开(公告)日：2009-06-11
申请号：US12292995
申请日：2008-12-02
申请人： Kenji Kameda , Jie Wang , Yuji Urano
发明人： Kenji Kameda , Jie Wang , Yuji Urano
IPC分类号： H01L21/321 , B05C11/00 , H01L21/02
CPC分类号： C23C16/4405
摘要： The present invention suppresses metallic contamination in a processing chamber and a breakage of a quartz member, while suppressing decrease in film formation rate in a thin film formation process immediately after dry cleaning of the inside of the processing chamber, and enhances the operation rate of a apparatus. The method according to the invention includes the steps of: removing the thin film on the inside of the processing chamber by supplying a fluorine gas solely or a fluorine gas diluted by an inert gas solely, as the cleaning gas, to the inside of the processing chamber heated to a first temperature; and removing an adhered material remaining on the inside of the processing chamber after removing the thin film by supplying a fluorine gas solely or a fluorine gas diluted by an inert gas solely, as the cleaning gas, to the inside of the processing chamber heated to a second temperature.
摘要翻译：本发明抑制处理室中的金属污染和石英部件的破损，同时在干燥清洁处理室之后立即在薄膜形成过程中抑制成膜速率的降低，并且提高了仪器。根据本发明的方法包括以下步骤：通过仅将单独的氟气或仅由惰性气体稀释的氟气作为清洁气体来除去处理室内部的薄膜到处理的内部室加热至第一温度; 并且通过仅将单独的氟气或仅由惰性气体稀释的氟气作为清洁气体除去薄膜而除去残留在处理室内部的粘附材料到加热到第二温度。

2. 发明授权

US09856560B2 Method for manufacturing semiconductor device and substrate processing apparatus 有权
公开(公告)号：US09856560B2
公开(公告)日：2018-01-02
申请号：US12379471
申请日：2009-02-23
申请人： Kenji Kameda , Jie Wang , Yuji Urano
发明人： Kenji Kameda , Jie Wang , Yuji Urano
IPC分类号： H01L21/311 , C23C16/44
CPC分类号： C23C16/4405
摘要： The method according to the invention includes the steps of: purging an inside of the processing chamber with gas while applying a thermal impact onto the thin film deposited on the inside of the processing chamber by decreasing the temperature in the processing chamber, so as to forcibly generate a crack in the thin film and forcibly peel the adhered material with a weak adhesive force, in a state where the substrate is not present in the processing chamber; removing the thin film deposited on the inside of the processing chamber by supplying a fluorine-based gas to the inside of the processing chamber heated to a first temperature, in the state where the substrate is not present in the processing chamber; and removing an adhered material remaining on the inside of the processing chamber after removing the thin film by supplying a fluorine-based gas to the inside of the processing chamber heated to a second temperature, in the state where the substrate is not present in the processing chamber.

3. 发明申请

US20090170328A1 Method for manufacturing semiconductor device and substrate processing method 有权
标题翻译：制造半导体器件的方法和基板处理方法
公开(公告)号：US20090170328A1
公开(公告)日：2009-07-02
申请号：US12379471
申请日：2009-02-23
申请人： Kenji Kameda , Jie Wang , Yuji Urano
发明人： Kenji Kameda , Jie Wang , Yuji Urano
IPC分类号： H01L21/311
CPC分类号： C23C16/4405
摘要： The method according to the invention includes the steps of: purging an inside of the processing chamber with gas while applying a thermal impact onto the thin film deposited on the inside of the processing chamber by decreasing the temperature in the processing chamber, so as to forcibly generate a crack in the thin film and forcibly peel the adhered material with a weak adhesive force, in a state where the substrate is not present in the processing chamber; removing the thin film deposited on the inside of the processing chamber by supplying a fluorine-based gas to the inside of the processing chamber heated to a first temperature, in the state where the substrate is not present in the processing chamber; and removing an adhered material remaining on the inside of the processing chamber after removing the thin film by supplying a fluorine-based gas to the inside of the processing chamber heated to a second temperature, in the state where the substrate is not present in the processing chamber.
摘要翻译：根据本发明的方法包括以下步骤：通过降低处理室中的温度，在气体中吹扫处理室内部，同时对沉积在处理室内部的薄膜进行热冲击，以强制在基板不存在于处理室中的状态下，在薄膜中产生裂纹并以弱的粘合力强制剥离粘附材料; 在基板不存在于处理室中的状态下，通过向被加热到第一温度的处理室的内部供应氟基气体来除去沉积在处理室内部的薄膜; 在加工到第二温度的处理室的内部，通过向处理室内部供给氟系气体而除去薄膜后残留在处理室内部的粘附物质，房间。

4. 发明授权

US08741783B2 Cleaning method, method of manufacturing semiconductor device, substrate processing apparatus and recording medium 有权
标题翻译：清洗方法，制造半导体装置的方法，基板处理装置和记录介质
公开(公告)号：US08741783B2
公开(公告)日：2014-06-03
申请号：US13616872
申请日：2012-09-14
申请人： Kenji Kameda , Yuji Urano
发明人： Kenji Kameda , Yuji Urano
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： B08B9/08 , C23C16/4405 , C23C16/56 , H01L21/02104
摘要： A method of cleaning an inside of a processing chamber is provided according to an embodiment of the present disclosure. The method includes supplying a fluorine-based gas and a nitrogen oxide-based gas as the cleaning gas, into the processing chamber heated to a first temperature, and removing a deposit by a thermochemical reaction. The method further includes changing a temperature in the processing chamber to a second temperature higher than the first temperature, and supplying the fluorine-based gas and the nitrogen oxide-based gas as the cleaning gas, and removing extraneous materials, remaining on the surface of the member in the processing chamber, by a thermochemical reaction.
摘要翻译：根据本公开的实施例提供了一种清洁处理室内部的方法。该方法包括将氟基气体和氮氧化物基气体作为清洗气体供入加热至第一温度的处理室中，并通过热化学反应除去沉积物。该方法还包括将处理室中的温度改变到高于第一温度的第二温度，并且供应氟基气体和氮氧化物基气体作为清洁气体，并除去留在表面上的外来材料处理室中的成员，通过热化学反应。

5. 发明申请

US20130065402A1 CLEANING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS AND RECORDING MEDIUM 有权
标题翻译：清洗方法，制造半导体器件的方法，基板处理装置和记录介质
公开(公告)号：US20130065402A1
公开(公告)日：2013-03-14
申请号：US13616872
申请日：2012-09-14
申请人： Kenji Kameda , Yuji Urano
发明人： Kenji Kameda , Yuji Urano
IPC分类号： B08B9/08 , H01L21/02 , C23C16/56
CPC分类号： B08B9/08 , C23C16/4405 , C23C16/56 , H01L21/02104
摘要： A method of cleaning an inside of a processing chamber is provided according to an embodiment of the present disclosure. The method includes supplying a fluorine-based gas and a nitrogen oxide-based gas as the cleaning gas, into the processing chamber heated to a first temperature, and removing a deposit by a thermochemical reaction. The method further includes changing a temperature in the processing chamber to a second temperature higher than the first temperature, and supplying the fluorine-based gas and the nitrogen oxide-based gas as the cleaning gas, and removing extraneous materials, remaining on the surface of the member in the processing chamber, by a thermochemical reaction.
摘要翻译：根据本公开的实施例提供了一种清洁处理室内部的方法。该方法包括将氟基气体和氮氧化物基气体作为清洗气体供入加热至第一温度的处理室中，并通过热化学反应除去沉积物。该方法还包括将处理室中的温度改变到高于第一温度的第二温度，并且供应氟基气体和氮氧化物基气体作为清洁气体，并除去留在表面上的外来材料处理室中的成员，通过热化学反应。

6. 发明授权

US08679989B2 Method of manufacturing semiconductor device including removal of deposits from process chamber and supply portion 有权
标题翻译：制造半导体器件的方法，包括从处理室和供应部分去除沉积物
公开(公告)号：US08679989B2
公开(公告)日：2014-03-25
申请号：US12224879
申请日：2007-03-27
申请人： Sadao Nakashima , Takahiro Maeda , Kiyohiko Maeda , Kenji Kameda , Yushin Takasawa
发明人： Sadao Nakashima , Takahiro Maeda , Kiyohiko Maeda , Kenji Kameda , Yushin Takasawa
IPC分类号： H01L21/31
CPC分类号： C23C16/4405 , B08B7/00
摘要： A method of manufacturing a semiconductor device has: carrying a substrate into a process chamber; depositing a thin film on the substrate by supplying inside the process chamber a first film deposition gas including at least one element among plural elements forming a thin film to be deposited and capable of accumulating a film solely and a second film deposition gas including at least another element among the plural elements and incapable of accumulating a film solely; carrying the substrate on which is deposited the thin film out from inside the process chamber; and removing a first sediment adhering to an interior of the process chamber and a second sediment adhering to an interior of the supply portion and having a chemical composition different from a chemical composition of the first sediment by supplying cleaning gases inside the process chamber and inside a supply portion that supplies the first film deposition gas while changing at least one of a supply flow rate, a concentration, and a type between a cleaning gas to be supplied inside the process chamber and a cleaning gas to be supplied inside the supply portion.
摘要翻译：制造半导体器件的方法具有：将衬底运送到处理室中; 通过在所述处理室内部供给包括形成要沉积的薄膜的多个元素中的至少一个元素并且能够单独地积聚膜的第一膜沉积气体和包括至少另一个的第二膜沉积气体而在所述基板上沉积薄膜元素，不能单独积聚; 携带其上沉积有薄膜的基板从处理室内部; 以及除去附着在处理室内部的第一沉淀物和附着在供应部分内部的第二沉淀物，并且具有与第一沉积物的化学成分不同的化学组成，其中通过在处理室内部和内部提供清洁气体供给部，其供给第一成膜气体，同时改变供给流量，浓度和待处理室内供给的清洗气体与要供给到供给部内部的清洗气体之间的种类中的至少一种。

7. 发明申请

US20090305517A1 Method of Manufacturing Semiconductor Device and Substrate Processing Apparatus 有权
标题翻译：制造半导体器件和衬底处理设备的方法
公开(公告)号：US20090305517A1
公开(公告)日：2009-12-10
申请号：US12224879
申请日：2007-03-27
申请人： Sadao Nakashima , Takahiro Maeda , Kiyohiko Maeda , Kenji Kameda , Yushin Takasawa
发明人： Sadao Nakashima , Takahiro Maeda , Kiyohiko Maeda , Kenji Kameda , Yushin Takasawa
IPC分类号： H01L21/469 , C23C16/46
CPC分类号： C23C16/4405 , B08B7/00
摘要： A method of manufacturing a semiconductor device has: carrying a substrate into a process chamber; depositing a thin film on the substrate by supplying inside the process chamber a first film deposition gas including at least one element among plural elements forming a thin film to be deposited and capable of accumulating a film solely and a second film deposition gas including at least another element among the plural elements and incapable of accumulating a film solely; carrying the substrate on which is deposited the thin film out from inside the process chamber; and removing a first sediment adhering to an interior of the process chamber and a second sediment adhering to an interior of the supply portion and having a chemical composition different from a chemical composition of the first sediment by supplying cleaning gases inside the process chamber and inside a supply portion that supplies the first film deposition gas while changing at least one of a supply flow rate, a concentration, and a type between a cleaning gas to be supplied inside the process chamber and a cleaning gas to be supplied inside the supply portion.
摘要翻译：制造半导体器件的方法具有：将衬底运送到处理室中; 通过在所述处理室内部供给包括形成要沉积的薄膜的多个元素中的至少一个元素并且能够单独地积聚膜的第一膜沉积气体和包括至少另一个的第二膜沉积气体而在所述基板上沉积薄膜元素，不能单独积聚; 携带其上沉积有薄膜的基板从处理室内部; 以及除去附着在处理室内部的第一沉淀物和附着在供应部分内部的第二沉淀物，并且具有与第一沉积物的化学成分不同的化学组成，其中通过在处理室内部和内部提供清洁气体供给部，其供给第一成膜气体，同时改变供给流量，浓度和待处理室内供给的清洗气体与要供给到供给部内部的清洗气体之间的种类中的至少一种。

8. 发明授权

US07047021B2 Communication system 失效
标题翻译：通讯系统
公开(公告)号：US07047021B2
公开(公告)日：2006-05-16
申请号：US10731864
申请日：2003-12-10
申请人： Yasunori Ohto , Yuichi Ueda , Kenji Kameda
发明人： Yasunori Ohto , Yuichi Ueda , Kenji Kameda
IPC分类号： H04Q7/20
CPC分类号： H04L67/1008 , H04L67/04 , H04L67/1002 , H04L67/1021 , H04L67/1029 , H04L67/18 , H04W36/32 , H04W40/20 , H04W40/248 , H04W40/36
摘要： A communication system adopts communication means having a small effective communication range for communication between mobile terminals and a server functioning as a cell station, so that each server is responsible for a small range only. In this manner, the communication system produces information about how servers are distributed on the network based on the geographic location of each server, thereby pre-delivering the information about such geographic locations and estimating how much and when data is to be delivered based on the positional relationship between servers and mobile terminals for load sharing.
摘要翻译：通信系统采用具有小的有效通信范围的通信装置，用于移动终端和用作小区站的服务器之间的通信，使得每个服务器仅负责小范围。以这种方式，通信系统基于每个服务器的地理位置产生关于如何在网络上分发服务器的信息，从而预先传递关于这样的地理位置的信息，并且基于服务器与移动终端之间的位置关系用于负载分担。

9. 发明授权

US08895457B2 Method of manufacturing semiconductor device and substrate processing apparatus 有权
标题翻译：制造半导体器件和衬底处理设备的方法
公开(公告)号：US08895457B2
公开(公告)日：2014-11-25
申请号：US13582861
申请日：2011-02-18
申请人： Naonori Akae , Kotaro Murakami , Yoshiro Hirose , Kenji Kameda
发明人： Naonori Akae , Kotaro Murakami , Yoshiro Hirose , Kenji Kameda
IPC分类号： C23C16/34 , C23C16/40 , B08B5/00 , H01L21/31 , C23C16/00 , C23C16/44 , C23C16/30 , C23C16/455 , H01L21/02
CPC分类号： C23C16/4405 , C23C16/30 , C23C16/345 , C23C16/347 , C23C16/402 , C23C16/45531 , H01L21/02126 , H01L21/0228 , Y10S438/905
摘要： To provide a method of manufacturing a semiconductor device, including: forming a thin film different from a silicon oxide film on a substrate by supplying a processing gas into a processing vessel in which the substrate is housed; removing a deposit including the thin film adhered to an inside of the processing vessel by supplying a fluorine-containing gas into the processing vessel after executing forming the thin film prescribed number of times; and forming a silicon oxide film having a prescribed film thickness on the inside of the processing vessel by alternately supplying a silicon-containing gas, and an oxygen-containing gas and a hydrogen-containing gas into the heated processing vessel in which a pressure is set to be less than an atmospheric pressure after removing the deposit.
摘要翻译：提供一种制造半导体器件的方法，包括：通过将处理气体供应到容纳衬底的处理容器中，在衬底上形成与氧化硅膜不同的薄膜; 通过在执行规定次数的薄膜之后，通过在处理容器中供给含氟气体，除去附着在处理容器内部的薄膜的沉积物; 通过在加压处理容器中交替地供给含硅气体和含氧气体和含氢气体，在处理容器的内部形成具有规定膜厚度的氧化硅膜在去除沉积物之后要小于大气压力。

10. 发明申请

US20130017685A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：制造半导体器件和衬底加工设备的方法
公开(公告)号：US20130017685A1
公开(公告)日：2013-01-17
申请号：US13582861
申请日：2011-02-18
申请人： Naonori Akae , Kotaro Murakami , Yoshiro Hirose , Kenji Kameda
发明人： Naonori Akae , Kotaro Murakami , Yoshiro Hirose , Kenji Kameda
IPC分类号： H01L21/316 , H01L21/311
CPC分类号： C23C16/4405 , C23C16/30 , C23C16/345 , C23C16/347 , C23C16/402 , C23C16/45531 , H01L21/02126 , H01L21/0228 , Y10S438/905
摘要： To provide a method of manufacturing a semiconductor device, including: forming a thin film different from a silicon oxide film on a substrate by supplying a processing gas into a processing vessel in which the substrate is housed; removing a deposit including the thin film adhered to an inside of the processing vessel by supplying a fluorine-containing gas into the processing vessel after executing forming the thin film prescribed number of times; and forming a silicon oxide film having a prescribed film thickness on the inside of the processing vessel by alternately supplying a silicon-containing gas, and an oxygen-containing gas and a hydrogen-containing gas into the heated processing vessel in which a pressure is set to be less than an atmospheric pressure after removing the deposit.
摘要翻译：提供一种制造半导体器件的方法，包括：通过将处理气体供应到容纳衬底的处理容器中，在衬底上形成与氧化硅膜不同的薄膜; 通过在执行规定次数的薄膜之后，通过在处理容器中供给含氟气体，除去附着在处理容器内部的薄膜的沉积物; 通过在加压处理容器中交替地供给含硅气体和含氧气体和含氢气体，在处理容器的内部形成具有规定膜厚度的氧化硅膜在去除沉积物之后要小于大气压力。

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