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1. 发明授权

US07047021B2 Communication system 失效
标题翻译：通讯系统
公开(公告)号：US07047021B2
公开(公告)日：2006-05-16
申请号：US10731864
申请日：2003-12-10
申请人： Yasunori Ohto , Yuichi Ueda , Kenji Kameda
发明人： Yasunori Ohto , Yuichi Ueda , Kenji Kameda
IPC分类号： H04Q7/20
CPC分类号： H04L67/1008 , H04L67/04 , H04L67/1002 , H04L67/1021 , H04L67/1029 , H04L67/18 , H04W36/32 , H04W40/20 , H04W40/248 , H04W40/36
摘要： A communication system adopts communication means having a small effective communication range for communication between mobile terminals and a server functioning as a cell station, so that each server is responsible for a small range only. In this manner, the communication system produces information about how servers are distributed on the network based on the geographic location of each server, thereby pre-delivering the information about such geographic locations and estimating how much and when data is to be delivered based on the positional relationship between servers and mobile terminals for load sharing.
摘要翻译：通信系统采用具有小的有效通信范围的通信装置，用于移动终端和用作小区站的服务器之间的通信，使得每个服务器仅负责小范围。以这种方式，通信系统基于每个服务器的地理位置产生关于如何在网络上分发服务器的信息，从而预先传递关于这样的地理位置的信息，并且基于服务器与移动终端之间的位置关系用于负载分担。

2. 发明申请

US20060143266A1 Communication system 审中-公开
公开(公告)号：US20060143266A1
公开(公告)日：2006-06-29
申请号：US11345387
申请日：2006-02-02
申请人： Yasunori Ohto , Yuichi Ueda , Kenji Kameda
发明人： Yasunori Ohto , Yuichi Ueda , Kenji Kameda
IPC分类号： G06F15/16
CPC分类号： H04L67/1008 , H04L67/04 , H04L67/1002 , H04L67/1021 , H04L67/1029 , H04L67/18 , H04W36/32 , H04W40/20 , H04W40/248 , H04W40/36
摘要： A communication system adopts communication means having a small effective communication range for communication between mobile terminals and a server functioning as a cell station, so that each server is responsible for a small range only. In this manner, the communication system produces information about how servers are distributed on the network based on the geographic location of each server, thereby pre-delivering the information about such geographic locations and estimating how much and when data is to be delivered based on the positional relationship between servers and mobile terminals for load sharing.

3. 发明授权

US08679989B2 Method of manufacturing semiconductor device including removal of deposits from process chamber and supply portion 有权
标题翻译：制造半导体器件的方法，包括从处理室和供应部分去除沉积物
公开(公告)号：US08679989B2
公开(公告)日：2014-03-25
申请号：US12224879
申请日：2007-03-27
申请人： Sadao Nakashima , Takahiro Maeda , Kiyohiko Maeda , Kenji Kameda , Yushin Takasawa
发明人： Sadao Nakashima , Takahiro Maeda , Kiyohiko Maeda , Kenji Kameda , Yushin Takasawa
IPC分类号： H01L21/31
CPC分类号： C23C16/4405 , B08B7/00
摘要： A method of manufacturing a semiconductor device has: carrying a substrate into a process chamber; depositing a thin film on the substrate by supplying inside the process chamber a first film deposition gas including at least one element among plural elements forming a thin film to be deposited and capable of accumulating a film solely and a second film deposition gas including at least another element among the plural elements and incapable of accumulating a film solely; carrying the substrate on which is deposited the thin film out from inside the process chamber; and removing a first sediment adhering to an interior of the process chamber and a second sediment adhering to an interior of the supply portion and having a chemical composition different from a chemical composition of the first sediment by supplying cleaning gases inside the process chamber and inside a supply portion that supplies the first film deposition gas while changing at least one of a supply flow rate, a concentration, and a type between a cleaning gas to be supplied inside the process chamber and a cleaning gas to be supplied inside the supply portion.
摘要翻译：制造半导体器件的方法具有：将衬底运送到处理室中; 通过在所述处理室内部供给包括形成要沉积的薄膜的多个元素中的至少一个元素并且能够单独地积聚膜的第一膜沉积气体和包括至少另一个的第二膜沉积气体而在所述基板上沉积薄膜元素，不能单独积聚; 携带其上沉积有薄膜的基板从处理室内部; 以及除去附着在处理室内部的第一沉淀物和附着在供应部分内部的第二沉淀物，并且具有与第一沉积物的化学成分不同的化学组成，其中通过在处理室内部和内部提供清洁气体供给部，其供给第一成膜气体，同时改变供给流量，浓度和待处理室内供给的清洗气体与要供给到供给部内部的清洗气体之间的种类中的至少一种。

4. 发明申请

US20090305517A1 Method of Manufacturing Semiconductor Device and Substrate Processing Apparatus 有权
标题翻译：制造半导体器件和衬底处理设备的方法
公开(公告)号：US20090305517A1
公开(公告)日：2009-12-10
申请号：US12224879
申请日：2007-03-27
申请人： Sadao Nakashima , Takahiro Maeda , Kiyohiko Maeda , Kenji Kameda , Yushin Takasawa
发明人： Sadao Nakashima , Takahiro Maeda , Kiyohiko Maeda , Kenji Kameda , Yushin Takasawa
IPC分类号： H01L21/469 , C23C16/46
CPC分类号： C23C16/4405 , B08B7/00
摘要： A method of manufacturing a semiconductor device has: carrying a substrate into a process chamber; depositing a thin film on the substrate by supplying inside the process chamber a first film deposition gas including at least one element among plural elements forming a thin film to be deposited and capable of accumulating a film solely and a second film deposition gas including at least another element among the plural elements and incapable of accumulating a film solely; carrying the substrate on which is deposited the thin film out from inside the process chamber; and removing a first sediment adhering to an interior of the process chamber and a second sediment adhering to an interior of the supply portion and having a chemical composition different from a chemical composition of the first sediment by supplying cleaning gases inside the process chamber and inside a supply portion that supplies the first film deposition gas while changing at least one of a supply flow rate, a concentration, and a type between a cleaning gas to be supplied inside the process chamber and a cleaning gas to be supplied inside the supply portion.
摘要翻译：制造半导体器件的方法具有：将衬底运送到处理室中; 通过在所述处理室内部供给包括形成要沉积的薄膜的多个元素中的至少一个元素并且能够单独地积聚膜的第一膜沉积气体和包括至少另一个的第二膜沉积气体而在所述基板上沉积薄膜元素，不能单独积聚; 携带其上沉积有薄膜的基板从处理室内部; 以及除去附着在处理室内部的第一沉淀物和附着在供应部分内部的第二沉淀物，并且具有与第一沉积物的化学成分不同的化学组成，其中通过在处理室内部和内部提供清洁气体供给部，其供给第一成膜气体，同时改变供给流量，浓度和待处理室内供给的清洗气体与要供给到供给部内部的清洗气体之间的种类中的至少一种。

5. 发明授权

US08895457B2 Method of manufacturing semiconductor device and substrate processing apparatus 有权
标题翻译：制造半导体器件和衬底处理设备的方法
公开(公告)号：US08895457B2
公开(公告)日：2014-11-25
申请号：US13582861
申请日：2011-02-18
申请人： Naonori Akae , Kotaro Murakami , Yoshiro Hirose , Kenji Kameda
发明人： Naonori Akae , Kotaro Murakami , Yoshiro Hirose , Kenji Kameda
IPC分类号： C23C16/34 , C23C16/40 , B08B5/00 , H01L21/31 , C23C16/00 , C23C16/44 , C23C16/30 , C23C16/455 , H01L21/02
CPC分类号： C23C16/4405 , C23C16/30 , C23C16/345 , C23C16/347 , C23C16/402 , C23C16/45531 , H01L21/02126 , H01L21/0228 , Y10S438/905
摘要： To provide a method of manufacturing a semiconductor device, including: forming a thin film different from a silicon oxide film on a substrate by supplying a processing gas into a processing vessel in which the substrate is housed; removing a deposit including the thin film adhered to an inside of the processing vessel by supplying a fluorine-containing gas into the processing vessel after executing forming the thin film prescribed number of times; and forming a silicon oxide film having a prescribed film thickness on the inside of the processing vessel by alternately supplying a silicon-containing gas, and an oxygen-containing gas and a hydrogen-containing gas into the heated processing vessel in which a pressure is set to be less than an atmospheric pressure after removing the deposit.
摘要翻译：提供一种制造半导体器件的方法，包括：通过将处理气体供应到容纳衬底的处理容器中，在衬底上形成与氧化硅膜不同的薄膜; 通过在执行规定次数的薄膜之后，通过在处理容器中供给含氟气体，除去附着在处理容器内部的薄膜的沉积物; 通过在加压处理容器中交替地供给含硅气体和含氧气体和含氢气体，在处理容器的内部形成具有规定膜厚度的氧化硅膜在去除沉积物之后要小于大气压力。

6. 发明申请

US20130017685A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：制造半导体器件和衬底加工设备的方法
公开(公告)号：US20130017685A1
公开(公告)日：2013-01-17
申请号：US13582861
申请日：2011-02-18
申请人： Naonori Akae , Kotaro Murakami , Yoshiro Hirose , Kenji Kameda
发明人： Naonori Akae , Kotaro Murakami , Yoshiro Hirose , Kenji Kameda
IPC分类号： H01L21/316 , H01L21/311
CPC分类号： C23C16/4405 , C23C16/30 , C23C16/345 , C23C16/347 , C23C16/402 , C23C16/45531 , H01L21/02126 , H01L21/0228 , Y10S438/905
摘要： To provide a method of manufacturing a semiconductor device, including: forming a thin film different from a silicon oxide film on a substrate by supplying a processing gas into a processing vessel in which the substrate is housed; removing a deposit including the thin film adhered to an inside of the processing vessel by supplying a fluorine-containing gas into the processing vessel after executing forming the thin film prescribed number of times; and forming a silicon oxide film having a prescribed film thickness on the inside of the processing vessel by alternately supplying a silicon-containing gas, and an oxygen-containing gas and a hydrogen-containing gas into the heated processing vessel in which a pressure is set to be less than an atmospheric pressure after removing the deposit.
摘要翻译：提供一种制造半导体器件的方法，包括：通过将处理气体供应到容纳衬底的处理容器中，在衬底上形成与氧化硅膜不同的薄膜; 通过在执行规定次数的薄膜之后，通过在处理容器中供给含氟气体，除去附着在处理容器内部的薄膜的沉积物; 通过在加压处理容器中交替地供给含硅气体和含氧气体和含氢气体，在处理容器的内部形成具有规定膜厚度的氧化硅膜在去除沉积物之后要小于大气压力。

7. 发明授权

US08277560B2 CVD apparatus and method of cleaning the CVD apparatus 有权
标题翻译： CVD装置和清洁CVD装置的方法
公开(公告)号：US08277560B2
公开(公告)日：2012-10-02
申请号：US10492539
申请日：2003-03-19
申请人： Katsuo Sakai , Seiji Okura , Masaji Sakamura , Kaoru Abe , Hitoshi Murata , Etsuo Wani , Kenji Kameda , Yuki Mitsui , Yutaka Ohira , Taisuke Yonemura , Akira Sekiya
发明人： Katsuo Sakai , Seiji Okura , Masaji Sakamura , Kaoru Abe , Hitoshi Murata , Etsuo Wani , Kenji Kameda , Yuki Mitsui , Yutaka Ohira , Taisuke Yonemura , Akira Sekiya
IPC分类号： H01L21/00 , C23C16/00
CPC分类号： C23C16/45593 , C23C16/4405 , C23C16/4412 , H01L21/02046 , Y02C20/30 , Y02P70/605
摘要： A CVD apparatus cleaning method that efficiently removes by-product such as SiO2 or Si3N4 adhered to and deposited on surfaces of an inner wall, an electrode, and the like in a reaction chamber at a film forming step. In the cleaning method the discharged cleaning gas amount is very small, environmental influences such as global warming can be lessened, and cost can be reduced. A CVD apparatus supplying reactive gas into a reaction chamber and forming a deposited film on a surface of a base material provided in the reaction chamber includes an exhaust gas recycling path recycling an exhaust gas reaching the reaction chamber from downstream of a pump on an exhaust path for exhausting a gas from an inner part of the reaction chamber through the pump.
摘要翻译：一种CVD装置清洗方法，其在成膜步骤中有效地除去在反应室内附着和沉积在内壁，电极等的表面上的副产物如SiO 2或Si 3 N 4。在清洁方法中，排出的清洁气体量非常小，可以减少诸如全球变暖的环境影响，并且可以降低成本。将反应气体供应到反应室中并在设置在反应室中的基材的表面上形成沉积膜的CVD装置包括排气回收路径，从排气路径上的泵下游到达反应室的废气再循环用于从反应室的内部通过泵排出气体。

8. 发明申请

US20060284879A1 Animation generating apparatus, animation generating method, and animation generating program 有权
公开(公告)号：US20060284879A1
公开(公告)日：2006-12-21
申请号：US11114030
申请日：2005-04-26
申请人： Hisanori Nagata , Kenji Kameda , Natsuo Koda
发明人： Hisanori Nagata , Kenji Kameda , Natsuo Koda
IPC分类号： G09G5/00
CPC分类号： G06T13/20 , G01C21/3638 , G06T19/003
摘要： An animation generating apparatus for generating a three-dimensional animation tracking a moving object includes a camera parameter setting section setting a point of regard and a point of view based on a current position of the moving object using route data indicating a route of the moving object so that the point of regard is located on the route and the point of view is located behind the point of regard along the route, and a rendering processor generating an image by retrieving necessary rendering data from three-dimensional map data based on the point of regard and point of view set by the camera parameter setting section.

9. 发明授权

US08741783B2 Cleaning method, method of manufacturing semiconductor device, substrate processing apparatus and recording medium 有权
标题翻译：清洗方法，制造半导体装置的方法，基板处理装置和记录介质
公开(公告)号：US08741783B2
公开(公告)日：2014-06-03
申请号：US13616872
申请日：2012-09-14
申请人： Kenji Kameda , Yuji Urano
发明人： Kenji Kameda , Yuji Urano
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： B08B9/08 , C23C16/4405 , C23C16/56 , H01L21/02104
摘要： A method of cleaning an inside of a processing chamber is provided according to an embodiment of the present disclosure. The method includes supplying a fluorine-based gas and a nitrogen oxide-based gas as the cleaning gas, into the processing chamber heated to a first temperature, and removing a deposit by a thermochemical reaction. The method further includes changing a temperature in the processing chamber to a second temperature higher than the first temperature, and supplying the fluorine-based gas and the nitrogen oxide-based gas as the cleaning gas, and removing extraneous materials, remaining on the surface of the member in the processing chamber, by a thermochemical reaction.
摘要翻译：根据本公开的实施例提供了一种清洁处理室内部的方法。该方法包括将氟基气体和氮氧化物基气体作为清洗气体供入加热至第一温度的处理室中，并通过热化学反应除去沉积物。该方法还包括将处理室中的温度改变到高于第一温度的第二温度，并且供应氟基气体和氮氧化物基气体作为清洁气体，并除去留在表面上的外来材料处理室中的成员，通过热化学反应。

10. 发明授权

US08043438B2 Device for cleaning CVD device and method of cleaning CVD device 有权
标题翻译： CVD装置的清洗装置及清洗CVD装置的方法
公开(公告)号：US08043438B2
公开(公告)日：2011-10-25
申请号：US10548874
申请日：2004-03-12
申请人： Katsuo Sakai , Kaoru Abe , Seiji Okura , Masaji Sakamura , Hitoshi Murata , Kenji Kameda , Etsuo Wani , Akira Sekiya
发明人： Katsuo Sakai , Kaoru Abe , Seiji Okura , Masaji Sakamura , Hitoshi Murata , Kenji Kameda , Etsuo Wani , Akira Sekiya
IPC分类号： B08B9/00
CPC分类号： C23C16/52 , C23C16/4405
摘要： An apparatus for cleaning a CVD apparatus that can efficiently remove a by-product such as SiO2 or Si3N4 stuck and deposited onto the surface of an internal wall, an electrode, or the like in a reaction chamber in a film forming process, and a method for cleaning a CVD apparatus. A control monitors luminous intensity data of an F radical in a reaction chamber by optical emission spectroscopy and compares the data with calibrated prestored luminous intensity data, and ends cleaning after a predetermined time passes from reaching a luminous intensity saturation point. Furthermore, concentration data of SiF4 in a gas discharged from the reaction chamber are monitored by a Fourier transform infrared spectrometry and compared with prestored concentration data of SiF4 to decide that the predetermined time has passed when a predetermined cleaning end point concentration is reached, thereby ending the cleaning.
摘要翻译：一种用于清洁CVD装置的装置，其可以有效地除去在成膜过程中在反应室中粘附并沉积到反应室内的表面上的诸如SiO 2或Si 3 N 4的副产物，以及方法用于清洁CVD装置。控制器通过光发射光谱监测反应室中F自由基的发光强度数据，并将该数据与校准的预存的发光强度数据进行比较，并且在经过预定时间从达到发光强度饱和点之后结束清洁。此外，通过傅里叶变换红外光谱法监测从反应室排出的气体中SiF 4的浓度数据，并与SiF 4的预先存储的浓度数据进行比较，以确定在达到预定清洗终点浓度时经过了预定时间，从而结束清洁。

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