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1. 发明授权

US5661191A Expandable rubber-modified styrene resin beads, expanded beads thereof, and expanded molded articles obtained therefrom 失效
标题翻译：可膨胀橡胶改性苯乙烯树脂珠，其发泡珠和由其获得的发泡模塑制品
公开(公告)号：US5661191A
公开(公告)日：1997-08-26
申请号：US576561
申请日：1995-12-21
申请人： Kenji Haraguchi , Takanori Suzuki , Mitsuo Furuichi , Hiromi Yamanaka , Masayuki Tanaka
发明人： Kenji Haraguchi , Takanori Suzuki , Mitsuo Furuichi , Hiromi Yamanaka , Masayuki Tanaka
IPC分类号： C08J9/18 , C08L81/04 , C08J9/16
CPC分类号： C08J9/18 , C08L81/04 , C08J2351/04 , Y10T428/249953
摘要： Expandable rubber-modified styrene resin beads, expanded rubber-modified styrene resin beads, and expanded molded rubber-modified styrene resin articles are described. The expandable beads comprise a rubber-modified styrene resin comprising a styrene resin having dispersed therein 8 to 15% by weight of conjugated diene rubber particles having a 1,4-cis structure in a proportion of not less than 70% and an average particle size of 1.5 to 3.0 .mu.m, the rubber-modified styrene resin having a mineral oil content of not more than 3.0% by weight, and the expandable rubber-modified styrene resin beads containing 1 to 15% by weight of a volatile blowing agent. The expanded molded article has excellent appearance, impact resistance and softness.
摘要翻译：可膨胀橡胶改性苯乙烯树脂珠，膨胀橡胶改性苯乙烯树脂珠，发泡成型橡胶改性苯乙烯树脂制品。可发泡珠粒包含橡胶改性苯乙烯树脂，其包含苯乙烯树脂，其中分散有8至15重量％的具有不小于70％的1,4-顺式结构的共轭二烯橡胶颗粒和平均粒度 1.5〜3.0μm的矿物油含量为3.0重量％以下的橡胶改性苯乙烯系树脂和含有1〜15重量％挥发性发泡剂的发泡性橡胶改性苯乙烯系树脂珠。膨胀成型品具有优异的外观，耐冲击性和柔软性。

2. 发明授权

US5693683A Expandable styrene resin beads and process for producing the same 失效
标题翻译：可发性苯乙烯树脂珠及其制造方法
公开(公告)号：US5693683A
公开(公告)日：1997-12-02
申请号：US699823
申请日：1996-08-19
申请人： Hiroki Shinozaki , Masayuki Tanaka , Yonezo Ueda , Takanori Suzuki
发明人： Hiroki Shinozaki , Masayuki Tanaka , Yonezo Ueda , Takanori Suzuki
IPC分类号： C08F2/18 , C08F12/00 , C08J9/00 , C08J9/20
CPC分类号： C08J9/0061 , C08J9/20 , C08J2325/00 , C08J2433/00
摘要： An expandable styrene resin bead containing voids therein, wherein the number of the voids present in the area from the surface of the bead to a depth of 0.1 mm along the radial direction is not more than 100 per mm.sup.2 as counted on a cross section passing through approximately the center of the bead. A process for producing expandable styrene resin beads by suspension polymerization is also disclosed in which a styrene monomer is suspended in an aqueous medium in the presence of an initiator and a suspending agent, and a blowing agent is incorporated into polymer beads produced, wherein an alkali metal salt or ammonium salt of persulfuric acid is added to the reaction system in an amount of 0.5 to 30 ppm based on the aqueous medium while the degree of conversion of said monomer is in the range of from 0 to 30%, and an electrolyte is added to the reaction system in a concentration of 0.02 to 5.0 mol/l based on the aqueous medium when the degree of conversion is 30% or higher. The expandable styrene resin bead does not require aging and, when pre-expanded, show little variation in the state of the cells, i.e., expandable styrene resin beads which hardly undergo influences of storage conditions.
摘要翻译：在其中含有空隙的可膨胀苯乙烯树脂珠，其中存在于从珠粒表面到沿径向方向0.1mm深度的区域中的空隙数不超过每mm 2 100个，大约是珠的中心。还公开了通过悬浮聚合制备可发性苯乙烯树脂珠的方法，其中在引发剂和悬浮剂存在下将苯乙烯单体悬浮在水性介质中，并将发泡剂引入所制备的聚合物珠中，其中碱过硫酸的金属盐或铵盐以相对于水性介质为0.5〜30ppm的量添加到反应体系中，而所述单体的转化率为0〜30％，电解质为当转化率为30％以上时，基于水性介质，以0.02〜5.0mol / l的浓度添加到反应体系中。可发性苯乙烯树脂珠不需要老化，并且当预扩展时，细胞状态几乎没有变化，即几乎不受储存条件影响的可发性苯乙烯树脂珠。

3. 发明授权

US08791521B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08791521B2
公开(公告)日：2014-07-29
申请号：US13423664
申请日：2012-03-19
申请人： Koji Nakahara , Kazuhiro Matsuo , Masayuki Tanaka , Hirofumi Iikawa
发明人： Koji Nakahara , Kazuhiro Matsuo , Masayuki Tanaka , Hirofumi Iikawa
IPC分类号： H01L29/788
CPC分类号： H01L27/11521 , H01L29/42324 , H01L29/7881
摘要： A semiconductor device includes an interelectrode insulating film formed between a charge storage layer and a control electrode layer. The interelectrode insulating film is formed in a first region above an upper surface of an element isolation insulating film, a second region along a sidewall of the charge storage layer, and a third region above an upper surface of the charge storage layer. The interelectrode insulating film includes a first stack including a first silicon nitride film or a high dielectric constant film interposed between a first and a second silicon oxide film or a second stack including a second high dielectric constant film and a third silicon oxide film, and a second silicon nitride film formed between the control electrode layer and the first or the second stack. The second silicon nitride film is relatively thinner in the third region than in the first region.
摘要翻译：半导体器件包括在电荷存储层和控制电极层之间形成的电极间绝缘膜。电极间绝缘膜形成在元件隔离绝缘膜的上表面上方的第一区域，沿着电荷存储层的侧壁的第二区域和电荷存储层的上表面上方的第三区域。电极间绝缘膜包括：第一堆叠，其包括介于第一和第二氧化硅膜之间的第一氮化硅膜或高介电常数膜，或包括第二高介电常数膜和第三氧化硅膜的第二堆叠，形成在控制电极层和第一或第二堆叠之间的第二氮化硅膜。在第三区域中，第二氮化硅膜比第一区域相对薄。

4. 发明授权

US08525252B2 Nonvolatile semiconductor memory device and method of fabricating the same 有权
公开(公告)号：US08525252B2
公开(公告)日：2013-09-03
申请号：US13233788
申请日：2011-09-15
申请人： Kenichiro Toratani , Masayuki Tanaka , Kazuhiro Matsuo
发明人： Kenichiro Toratani , Masayuki Tanaka , Kazuhiro Matsuo
IPC分类号： H01L29/792
CPC分类号： H01L29/792 , G11C16/0466 , H01L21/28282 , H01L27/11568 , H01L27/11582 , H01L29/4234 , H01L29/66833 , H01L29/7926
摘要： According to one embodiment, a nonvolatile semiconductor memory device includes a semiconductor region, a tunnel insulator provided above the semiconductor region, a charge storage insulator provided above the tunnel insulator, a block insulator provided above the charge storage insulator, a control gate electrode provided above the block insulator, and an interface region including a metal element, the interface region being provided at one interface selected from between the semiconductor region and the tunnel insulator, the tunnel insulator and the charge storage insulator, the charge storage insulator and the block insulator, and the block insulator and the control gate electrode.

5. 发明申请

US20130119531A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20130119531A1
公开(公告)日：2013-05-16
申请号：US13423818
申请日：2012-03-19
申请人： Masayuki Tanaka , Kenichiro Toratani
发明人： Masayuki Tanaka , Kenichiro Toratani
IPC分类号： H01L23/48 , H01L21/283
CPC分类号： H01L27/11578 , H01L21/02164 , H01L21/02271 , H01L21/02304 , H01L21/28273 , H01L21/28282 , H01L27/11521 , H01L27/11568 , H01L27/11582 , H01L29/94
摘要： According to one embodiment, a method for manufacturing a semiconductor device includes: forming an underlayer film that contains atoms selected from the group consisting of aluminum, boron and alkaline earth metal; and forming a silicon oxide film on the underlayer film by a CVD method or an ALD method by use of a silicon source containing at least one of an ethoxy group, a halogen group, an alkyl group and an amino group, or a silicon source of a siloxane system.
摘要翻译：根据一个实施例，制造半导体器件的方法包括：形成含有选自铝，硼和碱土金属的原子的底层膜; 或通过使用含有乙氧基，卤素基团，烷基和氨基中的至少一个的硅源或硅源的硅源，通过CVD法或ALD法在下层膜上形成氧化硅膜硅氧烷体系。

6. 发明申请

US20130084027A1 IMAGE PROCESSING APPARATUS 有权
标题翻译：图像处理设备
公开(公告)号：US20130084027A1
公开(公告)日：2013-04-04
申请号：US13578542
申请日：2011-02-10
申请人： Shunichi Koga , Masayuki Tanaka , Masatoshi Okutomi
发明人： Shunichi Koga , Masayuki Tanaka , Masatoshi Okutomi
IPC分类号： G06K9/32
CPC分类号： G06K9/32 , G06T3/4053 , H04N1/3871 , H04N5/232
摘要： [Problem]An object of the present invention is to provide an image processing apparatus used for acquisition assistance of optimal low-resolution image set for super-resolution processing.[Means for solving the problem]The image processing apparatus of the present invention comprises a processing unit for computing displacement amounts between a basis image and each reference image, a processing unit for generating a plurality of deformed images based on the displacement amounts, the basis image and a plurality of reference images, a processing unit for setting a threshold of a parameter used at the time of image information selection, a processing unit for selecting image information used in the super-resolution processing from the reference image by using the threshold of the parameter, a processing unit for generating composed images and weighted images based on the basis image, the displacement amounts and the image information, a processing unit for generating high-resolution grid images by dividing the composed image by the weighted image, a processing unit for generating simplified interpolation images based on high-resolution grid images, a processing unit for generating assistance images, a display unit for displaying the assistance images, and a control unit that respectively controls a processing concerning the image input, a processing concerning the basis image selection, a processing concerning the reference image selection and a processing concerning the threshold setting of the parameter as necessary.
摘要翻译：本发明的目的是提供一种用于超分辨率处理的最佳低分辨率图像集的获取辅助的图像处理装置。解决问题的手段本发明的图像处理装置包括：处理单元，用于计算基础图像和每个参考图像之间的位移量;处理单元，用于基于位移量产生多个变形图像;基础图像和多个参考图像，用于设置在图像信息选择时使用的参数的阈值的处理单元，用于从参考图像中选择用于超分辨率处理的图像信息的处理单元，所述参数，用于基于所述基础图像生成合成图像和加权图像的处理单元，所述位移量和所述图像信息，用于通过将所述合成图像除以所述加权图像来生成高分辨率网格图像的处理单元，处理单元用于生成基于高分辨率网格图像的简化插值图像的处理单元生成辅助图像，用于显示辅助图像的显示单元和分别控制与图像输入有关的处理的控制单元，关于基础图像选择的处理，关于参考图像选择的处理以及关于阈值设置的处理必要的参数。

7. 发明申请

US20120112263A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120112263A1
公开(公告)日：2012-05-10
申请号：US13351965
申请日：2012-01-17
申请人： Masayuki Tanaka , Daikuse Nishida , Ryota Fujitsuka , Katsuyuki Sekine , Akihito Yamamoto , Katsuaki Natori , Yoshio Ozawa
发明人： Masayuki Tanaka , Daikuse Nishida , Ryota Fujitsuka , Katsuyuki Sekine , Akihito Yamamoto , Katsuaki Natori , Yoshio Ozawa
IPC分类号： H01L29/788
CPC分类号： H01L29/42324 , H01L27/115 , H01L27/11521 , H01L29/7883
摘要： A semiconductor device includes a semiconductor substrate, a first insulating film formed on the semiconductor substrate, a charge storage layer formed on the first insulating film, a second insulating film formed on the charge storage layer, and a control electrode formed on the second insulating film, the second insulating film including a lower silicon nitride film, a lower silicon oxide film formed on the lower silicon nitride film, an intermediate insulating film formed on the lower silicon oxide film and containing a metal element, the intermediate insulating film having a relative dielectric constant of greater than 7, an upper silicon oxide film formed on the intermediate insulating film, and an upper silicon nitride film formed on the upper silicon oxide film.
摘要翻译：半导体器件包括半导体衬底，形成在半导体衬底上的第一绝缘膜，形成在第一绝缘膜上的电荷存储层，形成在电荷存储层上的第二绝缘膜，以及形成在第二绝缘膜上的控制电极，所述第二绝缘膜包括下氮化硅膜，形成在所述下氮化硅膜上的下氧化硅膜，形成在所述下氧化硅膜上并含有金属元素的中间绝缘膜，所述中间绝缘膜具有相对电介质大于7的常数，形成在中间绝缘膜上的上部氧化硅膜和形成在上部氧化硅膜上的上部氮化硅膜。

8. 发明授权

US08064331B2 Transmitting apparatus and method for maintaining learned information 有权
标题翻译：用于维护学习信息的发送装置和方法
公开(公告)号：US08064331B2
公开(公告)日：2011-11-22
申请号：US11442221
申请日：2006-05-30
申请人： Masayuki Tanaka , Satoshi Tanaka , Yasuhiro Ooba
发明人： Masayuki Tanaka , Satoshi Tanaka , Yasuhiro Ooba
IPC分类号： G01R31/08 , H04L12/28
CPC分类号： H04L67/2823 , H04L67/28 , H04L69/08
摘要： A protocol converting unit stores identification information for identifying a transfer path for data in a second network and a transmission source address specified in a packet in a corresponding manner. A failure detecting unit detects a transfer path in which a failure has occurred in the second network. A dummy-packet transmitting unit obtains a transmission source address corresponding to identification information of the transfer path in which the failure is detected, and transmits a dummy packet in which the obtained transmission source address is specified as the transmission source address to a first network.
摘要翻译：协议转换单元以相应的方式存储用于识别在第二网络中的数据的传送路径和分组中指定的传输源地址的标识信息。故障检测单元检测在第二网络中发生故障的传送路径。虚拟分组发送单元获得与检测到故障的传送路径的识别信息相对应的发送源地址，并将所获得的发送源地址被指定为发送源地址的虚拟分组发送到第一网络。

9. 发明授权

US08038832B2 Curable composition and sealing method 有权
标题翻译：可固化组合物和密封方法
公开(公告)号：US08038832B2
公开(公告)日：2011-10-18
申请号：US11994169
申请日：2006-06-30
申请人： Masayuki Tanaka
发明人： Masayuki Tanaka
IPC分类号： B29C65/00 , B32B37/00 , B32B38/04 , C04B37/00 , A61K6/083
CPC分类号： C09K3/10 , C08F265/04 , C08F265/06 , C08F290/04 , C08F290/06 , C08F292/00 , C08L2666/02 , C09D151/10 , C09J151/10 , C09K2200/0247 , C09K2200/0625 , C08F230/08 , C08F220/26
摘要： An object of the present invention is to provide a curable composition excellent in on-site formability, excellent in heat resistance, chemical resistance and oil resistance, and low in compression set. The invention relates to a curable composition comprising (a) a vinyl-based polymer containing at least one (meth)acryloyl group in a molecule thereof and having a number average molecular weight of 500 to 1,000,000, (b) an ethylenic unsaturated group-containing compound, (c) a thixotropic property-imparting agent, (d) fumed silica surface-treated with a (meth)acryloyl group-containing silane and (e) a photopolymerization initiator.
摘要翻译：本发明的目的是提供现场成型性优异，耐热性，耐化学性，耐油性优异，压缩变形性低的固化性组合物。本发明涉及一种可固化组合物，其包含（a）在其分子中含有至少一个（甲基）丙烯酰基的乙烯基类聚合物，其数均分子量为500〜1,000,000，（b）含烯属不饱和基团化合物，（c）触变性赋予剂，（d）用（甲基）丙烯酰基的硅烷表面处理的热解法二氧化硅和（e）光聚合引发剂。

10. 发明授权

US08022467B2 Nonvolatile semiconductor memory device and method of fabricating the same 有权
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US08022467B2
公开(公告)日：2011-09-20
申请号：US12467424
申请日：2009-05-18
申请人： Hirofumi Iikawa , Masayuki Tanaka
发明人： Hirofumi Iikawa , Masayuki Tanaka
IPC分类号： H01L29/792
CPC分类号： H01L29/42336 , H01L21/76224 , H01L27/11519 , H01L27/11521 , H01L27/11524 , H01L29/513 , H01L29/7881
摘要： A nonvolatile semiconductor memory device includes a first insulating layer, charge storage layers, element isolation insulating films, and a second insulating layer formed on the charge storage layers and the element isolation insulating films and including a stacked structure of a first silicon nitride film, first silicon oxide film, intermediate insulating film and second silicon oxide film. The first silicon nitride film has a nitrogen concentration of not less than 21×1015 atoms/cm2. Each element isolation insulating film includes a high-temperature oxide film formed along lower side surfaces of the charge storage layers between the charge storage layers and a coating type insulating film. The first silicon nitride film is formed on an upper surface of the high-temperature oxide film in upper surfaces of the element isolation insulating films and not on the upper surface of the coating type insulating film.
摘要翻译：非易失性半导体存储器件包括第一绝缘层，电荷存储层，元件隔离绝缘膜和形成在电荷存储层和元件隔离绝缘膜上的第二绝缘层，并且包括第一氮化硅膜的堆叠结构，第一氧化硅膜，中间绝缘膜和第二氧化硅膜。第一氮化硅膜的氮浓度不小于21×10 15原子/ cm 2。每个元件隔离绝缘膜包括沿电荷存储层和涂层型绝缘膜之间的电荷存储层的下侧表面形成的高温氧化膜。第一氮化硅膜形成在元件隔离绝缘膜的上表面的高温氧化膜的上表面上，而不是在涂层型绝缘膜的上表面上。

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