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1. 发明授权

US07038283B2 Thin film transistor device, method of manufacturing the same and liquid crystal panel 有权
标题翻译：薄膜晶体管器件及其制造方法和液晶面板
公开(公告)号：US07038283B2
公开(公告)日：2006-05-02
申请号：US10105137
申请日：2002-03-22
申请人： Kenichi Yanai , Yoshio Nagahiro , Kazushige Hotta , Koji Ohgata , Yasuyoshi Mishima , Nobuo Sasaki
发明人： Kenichi Yanai , Yoshio Nagahiro , Kazushige Hotta , Koji Ohgata , Yasuyoshi Mishima , Nobuo Sasaki
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L27/12 , H01L27/1237 , H01L27/1248 , H01L29/66757 , H01L29/78621 , H01L29/78624
摘要： In a case of a liquid crystal display apparatus, a gate insulating film of a TFT driven at a low voltage (3.3 V or 5 V) is constituted by one insulating film, and a thickness thereof is set to, for example, 30 nm. This TFT has a structure in which LDD regions (low concentration impurity regions) are not provided. A TFT having a CMOS structure, which is driven at a high voltage (18 V), has a gate insulating film constituted by two insulating films having a thickness of, for example, 130 nm in total. In an n-type TFT, a low concentration impurity region is provided on a drain side. A p-type TFT has a structure having no LDD region. A pixel TFT has a gate insulating film constituted by two insulating films, and LDD regions provided in both of its source/drain.
摘要翻译：在液晶显示装置的情况下，以低电压（3.3V或5V）驱动的TFT的栅极绝缘膜由一个绝缘膜构成，其厚度设定为例如30nm。该TFT具有不设置LDD区域（低浓度杂质区域）的结构。具有高电压（18V）驱动的具有CMOS结构的TFT具有由两个厚度例如总共为130nm的绝缘膜构成的栅极绝缘膜。在n型TFT中，在漏极侧设置低浓度杂质区域。 p型TFT具有不具有LDD区域的结构。像素TFT具有由两个绝缘膜构成的栅极绝缘膜，以及设置在其源/漏两者中的LDD区。

2. 发明授权

US07399662B2 Method of manufacturing a thin film transistor device 有权
标题翻译：制造薄膜晶体管器件的方法
公开(公告)号：US07399662B2
公开(公告)日：2008-07-15
申请号：US11246812
申请日：2005-10-07
申请人： Ken-ichi Yanai , Yoshio Nagahiro , Kazushige Hotta , Koji Ohgata , Yasuyoshi Mishima , Nobuo Sasaki
发明人： Ken-ichi Yanai , Yoshio Nagahiro , Kazushige Hotta , Koji Ohgata , Yasuyoshi Mishima , Nobuo Sasaki
IPC分类号： H01L21/00
CPC分类号： H01L27/12 , H01L27/1237 , H01L27/1248 , H01L29/66757 , H01L29/78621 , H01L29/78624
摘要： A method of making a thin film transistor device, including forming and patterning a semiconductor film to form first and second semiconductor films in, respectively, low-voltage driven and high-voltage driven thin film transistor formation regions. The method also includes forming a first insulating film on the first and second semiconductor films, and forming a first gate electrode on the first insulating film in the low-voltage driven thin film transistor formation region. Additionally, a second insulating film is formed on the entire surface of the resultant structure above the substrate, and a second gate electrode is formed on the second insulating film in the high-voltage driven thin film transistor formation region. The method also includes etching the first and second insulating films, thus forming first and second gate insulating films below, respectively, the first and second gate electrodes, with the second gate insulating film being wider than the second gate electrode.
摘要翻译：一种制造薄膜晶体管器件的方法，包括形成和构图半导体膜，以分别形成低压驱动和高电压驱动的薄膜晶体管形成区域中的第一和第二半导体膜。该方法还包括在第一和第二半导体膜上形成第一绝缘膜，以及在低电压驱动薄膜晶体管形成区域中的第一绝缘膜上形成第一栅电极。此外，在基板上方的所得结构的整个表面上形成第二绝缘膜，并且在高电压驱动薄膜晶体管形成区域中的第二绝缘膜上形成第二栅电极。该方法还包括蚀刻第一和第二绝缘膜，从而分别在第一和第二栅极电极之下形成第一和第二栅极绝缘膜，其中第二栅极绝缘膜比第二栅极电极宽。

3. 发明申请

US20060081946A1 Method of manufacturing a thin film transistor device 有权
标题翻译：制造薄膜晶体管器件的方法
公开(公告)号：US20060081946A1
公开(公告)日：2006-04-20
申请号：US11246812
申请日：2005-10-07
申请人： Ken-ichi Yanai , Yoshio Nagahiro , Kazushige Hotta , Koji Ohgata , Yasuyoshi Mishima , Nobuo Sasaki
发明人： Ken-ichi Yanai , Yoshio Nagahiro , Kazushige Hotta , Koji Ohgata , Yasuyoshi Mishima , Nobuo Sasaki
IPC分类号： H01L29/94
CPC分类号： H01L27/12 , H01L27/1237 , H01L27/1248 , H01L29/66757 , H01L29/78621 , H01L29/78624
摘要： In a case of a liquid crystal display apparatus, a gate insulating film of a TFT driven at a low voltage (3.3 V or 5 V) is constituted by one insulating film, and a thickness thereof is set to, for example, 30 nm. This TFT has a structure in which LDD regions (low concentration impurity regions) are not provided. A TFT having a CMOS structure, which is driven at a high voltage (18 V), has a gate insulating film constituted by two insulating films having a thickness of, for example, 130 nm in total. In an n-type TFT, a low concentration impurity region is provided on a drain side. A p-type TFT has a structure having no LDD region. A pixel TFT has a gate insulating film constituted by two insulating films, and LDD regions provided in both of its source/drain.
摘要翻译：在液晶显示装置的情况下，以低电压（3.3V或5V）驱动的TFT的栅极绝缘膜由一个绝缘膜构成，其厚度设定为例如30nm。该TFT具有不设置LDD区域（低浓度杂质区域）的结构。具有高电压（18V）驱动的具有CMOS结构的TFT具有由两个厚度例如总共为130nm的绝缘膜构成的栅极绝缘膜。在n型TFT中，在漏极侧设置低浓度杂质区域。 p型TFT具有不具有LDD区域的结构。像素TFT具有由两个绝缘膜构成的栅极绝缘膜，以及设置在其源/漏两者中的LDD区。

4. 发明授权

US08687163B2 Display panel and liquid crystal display device having particular sealing structure 有权
标题翻译：具有特殊密封结构的显示面板和液晶显示装置
公开(公告)号：US08687163B2
公开(公告)日：2014-04-01
申请号：US13509941
申请日：2010-08-09
申请人： Nobuo Sasaki
发明人： Nobuo Sasaki
IPC分类号： G02F1/1339 , G02F1/1337
CPC分类号： G02F1/1339 , G02F1/1337
摘要： The present invention provides a display panel that can improve the adhesion strength of a sealing member and that can reduce moisture permeation caused by an alignment film without performing a treatment to remove the alignment film. A display panel according to the present invention is a display panel having a pair of substrates attached to each other via a sealing member. At least one of the pair of substrates has a configuration in which a transparent resin film and an alignment film are laminated. In the display panel, a side face of an edge of the transparent resin film has a reverse tapered shape; the alignment film is separated at the side face of the edge; and the transparent resin film and the sealing member are attached to each other without having the alignment film therebetween.
摘要翻译：本发明提供一种显示面板，其可以提高密封构件的粘合强度，并且可以减少由取向膜引起的水分渗透，而不进行处理以除去取向膜。根据本发明的显示面板是具有经由密封构件彼此附接的一对基板的显示面板。一对基板中的至少一个具有层叠透明树脂膜和取向膜的构造。在显示面板中，透明树脂膜的边缘的侧面呈倒锥状，取向膜在边缘的侧面分离; 并且透明树脂膜和密封构件彼此附接而不在其间具有取向膜。

5. 发明授权

US08455038B2 Method for producing artificial bone and artificial bone produced by the method 有权
标题翻译：通过该方法生产人造骨和人造骨的方法
公开(公告)号：US08455038B2
公开(公告)日：2013-06-04
申请号：US12946299
申请日：2010-11-15
申请人： Koichi Amaya , Yukinori Urushizaki , Hideto Matsubara , Nobuo Sasaki , Yuichi Tei
发明人： Koichi Amaya , Yukinori Urushizaki , Hideto Matsubara , Nobuo Sasaki , Yuichi Tei
IPC分类号： A61F2/30 , B32B37/02 , B32B43/00 , B23K15/00
CPC分类号： A61L27/50 , A61L2430/02 , B33Y40/00 , B33Y80/00
摘要： A method for producing an artificial bone capable of accurate molding at a joined part with appropriate strength, in which electromagnetic waves or electron beams are irradiated to a layer of at least type of powder selected from metal biomaterials, ceramics for the artificial bone and plastic resins for the artificial bone based on image data corresponding to a shape of the artificial bone, thereby effecting sintering or melting, and the thus sintered layer or melted and solidified layer is laminated, such that a surface finish step is adopted that inner faces and/or outer faces of both ends and their vicinities configuring the joined part to a human bone part are polished by a rotating tool based on the image data and also irradiation of electromagnetic waves or electron beams at both ends and their vicinities constituting the joined part is set greater than that at other regions.
摘要翻译：一种用于制造能够以适当强度在接合部分精确模制的人造骨的方法，其中电磁波或电子束照射到选自金属生物材料，人造骨的陶瓷和塑料树脂中的至少一种粉末的层基于对应于人造骨的形状的图像数据进行人造骨，由此进行烧结或熔化，并且将这样的烧结层或熔融固化层层合，从而采用表面精加工步骤，即内表面和/或基于图像数据，通过旋转工具对构成接合部的人骨部分的两端及其附近的外表面进行抛光，并且构成接合部的两端及其附近的电磁波或电子束的照射被设定为更大比其他地区。

6. 发明授权

US07664922B2 Data transfer arbitration apparatus and data transfer arbitration method 有权
标题翻译：数据传输仲裁设备和数据传输仲裁方法
公开(公告)号：US07664922B2
公开(公告)日：2010-02-16
申请号：US11431965
申请日：2006-05-11
申请人： Katsushi Ohtsuka , Nobuo Sasaki
发明人： Katsushi Ohtsuka , Nobuo Sasaki
IPC分类号： G06F12/00
CPC分类号： G06F13/1647
摘要： When a concentration of access requests on a specific bank occurs, the delay time is caused due to the competition among the accesses, thereby lowering the processing speed of an information processing apparatus as a whole. A data transfer arbitration unit 172 sequentially transfers data to be recorded to a memory controller 160 that records data in memory having a plurality of banks. A selector 174 selects any DMAC 170 from among a plurality of DMACs, irrespective of priority sequence of transfer service for the DMAC. A transmitter 176 transmits, to a control-side transfer unit 114, data requested to be transferred by the selected DMAC 170. The selector 174 selects consecutively the DMAC 170 so that the transfer service for the same DMAC is consecutively executed, and determines the number of consecutive selections so that a transfer across the banks of the DMAC 170 occurs by a plurality of the transfer services.
摘要翻译：当在特定存储体上存在访问请求的集中时，由于访问之间的竞争引起延迟时间，从而降低了信息处理设备整体的处理速度。数据传输仲裁单元172将要记录的数据顺序地传送到存储器控制器160，存储器控制器160将数据记录在具有多个存储体的存储器中。选择器174从多个DMAC中选择任何DMAC 170，而与DMAC的传送服务的优先顺序无关。发送器176向控制侧传送单元114发送请求由所选择的DMAC 170传送的数据。选择器174连续选择DMAC 170，使得连续执行相同DMAC的传送服务，并确定该号码的连续选择，使得跨越DMAC 170的存储体的传输由多个传送服务发生。

7. 发明申请

US20090098061A1 SOLUTION FOR TISSUE ADHESION PREVENTION AND METHOD FOR TISSUE ADHESION PREVENTION 审中-公开
标题翻译：用于组织粘连预防和组织粘连预防方法的解决方案
公开(公告)号：US20090098061A1
公开(公告)日：2009-04-16
申请号：US11917026
申请日：2006-06-08
申请人： Shigeki Suzuki , Yoshikatsu Miwa , Nobuo Sasaki , Yuiichi Tei
发明人： Shigeki Suzuki , Yoshikatsu Miwa , Nobuo Sasaki , Yuiichi Tei
IPC分类号： A61K9/12 , C13K13/00 , A61K31/715
CPC分类号： A61K31/7016 , A61L31/042
摘要： The objective of the invention is to provide a solution for tissue adhesion prevention and a method for tissue adhesion prevention that are applicable to general surgery and in which covering condition during surgery is stable and convenient. The invention is the solution for tissue adhesion prevention of which the active ingredient is trehalose. Also, it contains at least one or more among antioxidants, chelates, antiseptics, hemostatics, anti-inflammatory agents, and polysaccharides, mucopolysaccharides, salts of polysaccharides and salts of mucopolysaccharides having lubricating properties. This solution for tissue adhesion prevention is provided as any form of perfusion fluid, spray fluid, solution for spray or vaporization administration, foam-like aerosol preparation, injection solution for intravenous fluids, intravenous fluid.
摘要翻译：本发明的目的是提供一种适用于一般手术的组织粘连防止方法和组织粘连防止方法，其中手术中的覆盖状态是稳定和方便的。本发明是用于组织粘附预防的方法，其中活性成分是海藻糖。此外，它还含有至少一种或多种抗氧化剂，螯合物，防腐剂，止血剂，抗炎剂和多糖，粘多糖，多糖的盐和具有润滑性质的粘多糖的盐中的至少一种或多种。用于组织粘附防止的这种解决方案提供为任何形式的灌注液，喷雾液，用于喷雾或蒸发给药的溶液，泡沫状气溶胶制剂，静脉注射液注射液，静脉注射液。

8. 发明授权

US07375712B2 Liquid crystal display with separate positive and negative driving circuits 有权
标题翻译：液晶显示器带有单独的正负驱动电路
公开(公告)号：US07375712B2
公开(公告)日：2008-05-20
申请号：US10316434
申请日：2002-12-11
申请人： Nobuo Sasaki
发明人： Nobuo Sasaki
IPC分类号： G09G3/36
CPC分类号： G09G3/3659 , G02F1/136286 , G02F2001/136245 , G09G3/3614 , G09G2300/0823 , G09G2310/06
摘要： The invention provides an active matrix type TFT LCD in which a driving voltage of pixel TFTs is reduced. A pixel is formed with two thin film transistors, i.e., a positive-voltage-applying n-channel TFT for applying a data voltage having a positive polarity to a pixel electrode and a negative-voltage-applying p-channel TFT for applying a data voltage having a negative polarity to the pixel electrode. A source electrode of the positive-voltage-applying TFT is connected to the pixel electrode; a drain electrode of the same is connected to a data bus line for applying the positive voltage; and a gate electrode of the same is connected to a gate bus line for applying the positive voltage. A source electrode of the other TFT is also connected to the pixel electrode; a drain electrode of the same is connected to a data bus line for applying the negative voltage; and a gate electrode of the same is connected to a gate bus line for applying the negative voltage.
摘要翻译：本发明提供一种有源矩阵型TFT LCD，其中像素TFT的驱动电压降低。像素形成有两个薄膜晶体管，即用于向像素电极施加具有正极性的数据电压的正电压施加n沟道TFT和用于施加数据的负电压施加p沟道TFT 对像素电极具有负极性的电压。正电压施加TFT的源电极连接到像素电极; 其漏电极连接到用于施加正电压的数据总线; 并且其栅电极连接到用于施加正电压的栅极总线。另一TFT的源电极也连接到像素电极; 其漏电极连接到用于施加负电压的数据总线; 并且其栅电极连接到用于施加负电压的栅极总线。

9. 发明申请

US20080062498A1 Apparatus for crystallizing semiconductor with laser beams 失效
标题翻译：用激光束使半导体结晶的装置
公开(公告)号：US20080062498A1
公开(公告)日：2008-03-13
申请号：US11980287
申请日：2007-10-30
申请人： Nobuo Sasaki , Tatsuya Uzuka , Koichi Ohki
发明人： Nobuo Sasaki , Tatsuya Uzuka , Koichi Ohki
IPC分类号： G02B26/02 , G02B27/10
CPC分类号： H01L21/02683 , B23K26/067 , B23K26/0676 , B23K26/08 , B23K26/0884 , B23K2101/006 , B23K2101/40 , C30B13/24 , C30B35/00 , G02B19/0014 , G02B19/0057 , G02B27/144 , G02B27/145 , H01L21/02422 , H01L21/02532 , H01L21/02691 , H01L21/2026 , H01L27/1285 , H01L29/6675 , H01L29/78672 , Y10T29/41
摘要： Laser beams emitted by a plurality of laser sources are divided into a plurality of sub-beams, which are irradiated onto selected portions of an amorphous semiconductor on a substrate to crystallize the amorphous semiconductor. A difference in diverging angles between the laser beams is corrected by a beam expander. The apparatus includes a sub-beam selective irradiating system including a sub-beam dividing assembly and a sub-beam focussing assembly. Also, the apparatus includes laser sources, a focussing optical system, and a combining optical system. A stage for supporting a substrate includes a plurality of first stage members, a second stage member disposed above the first stage members, and a third stage member 38C, rotatably disposed above the second stage to support an amorphous semiconductor.
摘要翻译：由多个激光源发射的激光束被分成多个子光束，这些子光束照射到衬底上的非晶半导体的选定部分上以使非晶半导体结晶。通过光束扩展器校正激光束之间的发散角度的差异。该装置包括一个子光束选择性照射系统，它包括一个子光束分割组件和一个子光束聚焦组件。而且，该装置还包括激光源，聚焦光学系统和组合光学系统。用于支撑基板的台阶包括多个第一平台构件，设置在第一平台构件上方的第二平台构件以及可旋转地设置在第二平台上方以支撑非晶半导体的第三平台构件38C。

10. 发明申请

US20070085169A1 Semiconductor thin film forming method and semiconductor device 审中-公开
标题翻译：半导体薄膜形成方法和半导体器件
公开(公告)号：US20070085169A1
公开(公告)日：2007-04-19
申请号：US11634111
申请日：2006-12-06
申请人： Akito Hara , Nobuo Sasaki
发明人： Akito Hara , Nobuo Sasaki
IPC分类号： H01L29/864
CPC分类号： H01L21/02686 , H01L21/02532 , H01L21/2026 , H01L27/1281 , H01L29/04 , H01L29/66757 , H01L29/66772 , H01L29/78654 , H01L29/78675 , H01L29/78696
摘要： A polycrystal thin film forming method comprising the step of forming a semiconductor thin film on a substrate 14, and the step of flowing a heated gas to the semiconductor thin film while an energy beam 38 is being applied to the semiconductor thin film at a region to which the gas is being applied to thereby melt the semiconductor film, and crystallizing the semiconductor thin film in its solidification. The energy beam is applied while the high-temperature gas is being flowed, whereby the melted semiconductor thin film can have low solidification rate, whereby the polycrystal thin film can have large crystal grain diameters and can have good quality of little defects in crystal grains and little twins.
摘要翻译：一种多晶薄膜形成方法，包括在衬底14上形成半导体薄膜的步骤，以及将能量束38在一个区域施加到半导体薄膜的同时使加热的气体流到半导体薄膜的步骤，将该气体施加于熔融半导体膜，并使其半导体薄膜凝固。当高温气体流动时施加能量束，由此熔融的半导体薄膜可以具有低固化速率，由此多晶薄膜可以具有大的晶粒直径，并且可以具有良好的晶粒缺陷质量，小双胞胎

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