专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06226060B1 Active matrix type liquid crystal display device having chromium alloy connecting portions at pixel electrode or near driving circuit terminals 失效
标题翻译：在像素电极或驱动电路端子附近具有铬合金连接部分的有源矩阵型液晶显示装置
公开(公告)号：US06226060B1
公开(公告)日：2001-05-01
申请号：US08958672
申请日：1997-10-27
申请人： Kenichi Onisawa , Kikuo Ono , Toshiki Kaneko , Kenichi Chahara , Katsunori Nakajima , Etsuko Nishimura , Takeshi Satou , Tetsuro Minemura
发明人： Kenichi Onisawa , Kikuo Ono , Toshiki Kaneko , Kenichi Chahara , Katsunori Nakajima , Etsuko Nishimura , Takeshi Satou , Tetsuro Minemura
IPC分类号： G02F1136
CPC分类号： G02F1/13458 , G02F1/1345 , G02F1/13452 , G02F1/136286 , G02F2001/13629 , H05K1/09
摘要： In an active matrix type liquid crystal display device, at least material of one element, forming the connecting portion between signal transfer lines related to the scan lines and the data signal lines of the device, is an alloy of at least a chemical element selected from the group consisting of Nb, Mo, Ta, and W, with Cr, the scan lines and means for generating scan pulses are connected to each other via a first opening formed in an insulating film, the data signal lines and the means for generating image data are connected to each other via a second opening formed in an insulating film, a polycrystalline thin film, which is connected to the means for generating scan pulses, is inserted into the first opening, and a polycrystalline thin film, which is connected to the means for generating image data, is inserted into the second opening, and the polycrystalline thin film is composed of indium tin oxide, which is made of mainly indium oxide and added tin oxide, having a specific resistance of, at the utmost, 6×10−4 &OHgr;cm.
摘要翻译：在有源矩阵型液晶显示装置中，形成与扫描线相关的信号传送线与该装置的数据信号线之间的连接部分的至少一个元件的材料是至少选自以下的化学元素的合金：由Nb，Mo，Ta和W组成的组与Cr，扫描线和用于产生扫描脉冲的装置通过形成在绝缘膜中的第一开口彼此连接，数据信号线和用于产生图像的装置数据通过形成在绝缘膜中的第二开口彼此连接，连接到产生扫描脉冲的装置的多晶薄膜被插入到第一开口中，并且多晶薄膜连接到第一开口用于生成图像数据的装置插入到第二开口中，并且多晶薄膜由主要由氧化铟制成的氧化铟锡和添加有氧化锡的氧化铟锡组成，具有特定的电阻最大的是6x10-4欧米伽。

2. 发明授权

US06587164B2 Active matrix type liquid crystal display device having chromium alloy connecting portions which are other than the material of the data line or gate line 有权
标题翻译：具有不同于数据线或栅线的材料的铬合金连接部分的有源矩阵型液晶显示装置
公开(公告)号：US06587164B2
公开(公告)日：2003-07-01
申请号：US09761187
申请日：2001-01-18
申请人： Kenichi Onisawa , Kikuo Ono , Toshiki Kaneko , Kenichi Chahara , Katsunori Nakajima , Etsuko Nishimura , Takeshi Satou , Tetsuro Minemura
发明人： Kenichi Onisawa , Kikuo Ono , Toshiki Kaneko , Kenichi Chahara , Katsunori Nakajima , Etsuko Nishimura , Takeshi Satou , Tetsuro Minemura
IPC分类号： G02F1136
CPC分类号： G02F1/13458 , G02F1/1345 , G02F1/13452 , G02F1/136286 , G02F2001/13629 , H05K1/09
摘要： In an active matrix type liquid crystal display device, at least material of one element, forming the connecting portion between signal transfer lines related to the scan lines and the data signal lines of the device, is an alloy of at least a chemical element selected from the group consisting of Nb, Mo, Ta, and W, with Cr, the scan lines and means for generating scan pulses are connected to each other via a first opening formed in an insulating film, the data signal lines and the means for generating image data are connected to each other via a second opening formed in an insulating film, a polycrystalline thin film, which is connected to the means for generating scan pulses, is inserted into the first opening, and a polycrystalline thin film, which is connected to the means for generating image data, is inserted into the second opening, and the polycrystalline thin film is composed of indium tin oxide, which is made of mainly indium oxide and added tin oxide, having a specific resistance of, at the utmost, 6×10−4 &OHgr;cm.
摘要翻译：在有源矩阵型液晶显示装置中，形成与扫描线相关的信号传送线与该装置的数据信号线之间的连接部分的至少一个元件的材料是至少选自以下的化学元素的合金：由Nb，Mo，Ta和W组成的组与Cr，扫描线和用于产生扫描脉冲的装置通过形成在绝缘膜中的第一开口彼此连接，数据信号线和用于产生图像的装置数据通过形成在绝缘膜中的第二开口彼此连接，连接到产生扫描脉冲的装置的多晶薄膜被插入到第一开口中，并且多晶薄膜连接到第一开口用于生成图像数据的装置插入到第二开口中，并且多晶薄膜由主要由氧化铟制成的氧化铟锡和添加有氧化锡的氧化铟锡组成，具有特定的电阻最大的是6x10-4欧米伽。

3. 发明授权

US06512270B2 Thin film transistor substrate and process for producing the same 有权
公开(公告)号：US06512270B2
公开(公告)日：2003-01-28
申请号：US09931761
申请日：2001-08-20
申请人： Takeshi Satou , Takuya Takahashi , Tomoya Katou , Toshiki Kaneko , Hajime Ikeda
发明人： Takeshi Satou , Takuya Takahashi , Tomoya Katou , Toshiki Kaneko , Hajime Ikeda
IPC分类号： H01L2701
CPC分类号： H01L27/124 , H01L27/1214 , H01L27/127 , H01L27/1288 , H01L29/42384 , H01L29/4908 , H01L29/66765 , H01L29/78621
摘要： A polycrystalline Si thin film transistor substrate having a self-aligned LDD and provided with a gate made of a Mo—W alloy having a W concentration not lower than 5% by weight and lower than 25% by weight and preferably a W concentration of 17 to 22% by weight, which is formed by a process comprising a wet-etching step using an etching solution having a phosphoric acid concentration of 60% to 70% by weight, has uniform characteristic properties and is excellent in productivity.

4. 发明授权

US06948049B2 Data processing system and control method 有权
标题翻译：数据处理系统及控制方法
公开(公告)号：US06948049B2
公开(公告)日：2005-09-20
申请号：US10175446
申请日：2002-06-20
申请人： Takeshi Satou
发明人： Takeshi Satou
IPC分类号： G06F9/30 , G06F9/38 , G06F15/00
CPC分类号： G06F9/3814 , G06F9/3802 , G06F9/3836 , G06F9/3877
摘要： A data processing system is provided that comprises a special-purpose processing unit (VU), a general-purpose processing unit that is suited to general-purpose data processing unit (PU) and a fetch unit for supplying a special-purpose instruction to the VU and supplying a general-purpose instruction to the PU, wherein the PU is equipped with a first mode for operating based on a first instruction from the fetch unit and a second mode for operating based on a second instruction from the VU. The resources of the PU are made available for use by the VU so that the resources of the PU can be used by the VU with effectively no overheads being required by the transfer of data between the VU and the PU. As a result, a processor with even greater flexibility and faster processing can be provided.
摘要翻译：提供了一种数据处理系统，其包括专用处理单元（VU），适用于通用数据处理单元（PU）的通用处理单元和用于向通用数据处理单元（PU）提供专用指令的提取单元 VU并且向PU提供通用指令，其中PU配备有基于来自提取单元的第一指令进行操作的第一模式和基于来自VU的第二指令进行操作的第二模式。 PU的资源可供VU使用，使得可以由VU使用PU的资源，在VU和PU之间的数据传输中没有必要的开销。因此，可以提供具有更大灵活性和更快处理的处理器。

5. 发明授权

US06394146B2 Split reed including a weaving reed and an auxiliary reed having a non-planar guide path 失效
标题翻译：分割簧片包括编织芦苇和具有非平面引导路径的辅助筘
公开(公告)号：US06394146B2
公开(公告)日：2002-05-28
申请号：US09855616
申请日：2001-05-16
申请人： Takeshi Satou , Akihiko Nakada , Shigeharu Sawada
发明人： Takeshi Satou , Akihiko Nakada , Shigeharu Sawada
IPC分类号： D03D4962
CPC分类号： D03D49/62 , D03D47/278
摘要： A split reed has a weaving reed formed by successively arranging dents respectively provided with recesses forming a weft yarn guide path having a back surface, and an auxiliary reed respectively provided with recesses forming a weft yarn guide path having a back surface. The weaving reed and the auxiliary reed are attached to a slay or the respective dents of the weaving reed and the auxiliary reed are formed so that the back surface of the weft yarn guide path of the auxiliary reed is included in a plane behind a plane including the back surface of the weaving reed with respect to the cloth fell of a fabric on the loom when the weaving reed and the auxiliary reed are attached to the slay.
摘要翻译：分割簧片具有通过连续布置分别设置有形成具有后表面的纬纱引导路径的凹部的凹槽和分别设置有形成具有后表面的纬纱引导路径的凹部的辅助簧片而形成的编织舌簧。编织筘和辅助筘连接在一个泥土上，或者编织筘和辅助筘的各自的凹痕形成为使得辅助筘的纬纱引导路径的后表面被包括在包括当编织芦苇和辅助芦苇附着在屠宰机上时，编织芦苇的背面相对于织布上的织物的布坠。

6. 发明授权

US08259280B2 Image display device and manufacturing method thereof 有权
标题翻译：图像显示装置及其制造方法
公开(公告)号：US08259280B2
公开(公告)日：2012-09-04
申请号：US12509581
申请日：2009-07-27
申请人： Takashi Hattori , Midori Kato , Mutsuko Hatano , Takeshi Satou
发明人： Takashi Hattori , Midori Kato , Mutsuko Hatano , Takeshi Satou
IPC分类号： G02F1/1333 , G02F1/1335
CPC分类号： G02F1/133345 , G02F1/133528 , G02F1/1362 , G02F2001/133567
摘要： An image display device having a display panel in which a first substrate and a second substrate are disposed to each other, in which the first substrate includes an insulating substrate composed of a resin, a circuit layer having a circuit where a plurality of Thin-film transistors are arranged in a matrix, and a polarizer disposed between the insulating substrate and the circuit layer, the insulating substrate has a thickness of 20 μm or more and 150 μm or less, a transmittance of 80% or more for a visible light at a wavelength of 400 nm or more and 800 nm or less, and a 3% weight reduction temperature of 300° C. or higher, and has no melting point or has a melting point of 300° C. or higher.
摘要翻译：一种具有显示面板的图像显示装置，其中第一基板和第二基板彼此配置，其中第一基板包括由树脂构成的绝缘基板，电路层具有多个薄膜晶体管布置在矩阵中，并且偏振器设置在绝缘基板和电路层之间，绝缘基板的厚度为20μm以上且150μm以下，对于可见光的透射率为80％以上波长400nm以上且800nm以下，3％重量减少温度为300℃以上，无熔点或熔点为300℃以上。

7. 发明授权

US07528408B2 Semiconductor thin film and process for production thereof 有权
标题翻译：半导体薄膜及其制造方法
公开(公告)号：US07528408B2
公开(公告)日：2009-05-05
申请号：US11342602
申请日：2006-01-31
申请人： Kazuo Takeda , Jun Gotou , Masakazu Saito , Makoto Ohkura , Takeshi Satou , Hiroshi Fukuda , Takeo Shiba
发明人： Kazuo Takeda , Jun Gotou , Masakazu Saito , Makoto Ohkura , Takeshi Satou , Hiroshi Fukuda , Takeo Shiba
IPC分类号： H01L29/10
CPC分类号： C30B29/06 , C30B13/00 , Y10S117/904
摘要： To improve the laser annealing process for polycrystallizing amorphous silicon to form silicon thin films having large crystal particle diameters at a high throughput, the present invention is directed to a process of crystallization by irradiation of a semiconductor thin film formed on a substrate with pulsed laser light. The process comprises having a means to shape laser light into a linear beam and a means to periodically and spatially modulate the intensity of pulsed laser in the direction of the long axis of the linear beam by passing through a phase-shifting stripy pattern perpendicular to the long axis, and collectively forming for each shot a polycrystalline film composed of crystals which have grown in a certain direction over the entire region irradiated with the linear beam.
摘要翻译：为了改善多晶非晶硅的激光退火工艺，以高通量形成具有大晶粒直径的硅薄膜，本发明涉及通过用脉冲激光照射形成在基板上的半导体薄膜进行结晶的工艺。该方法包括具有将激光成形为线性光束的装置以及通过穿过垂直于线性光束的相移条纹图案来周期性和空间地调制脉冲激光在线性光束的长轴方向上的强度的装置长轴，并且对于每一次射出，共同形成由在被线束束照射的整个区域上沿一定方向生长的晶体的多晶膜。

8. 发明授权

US07323716B2 Manufacturing method of thin film transistor substrate 失效
标题翻译：薄膜晶体管衬底的制造方法
公开(公告)号：US07323716B2
公开(公告)日：2008-01-29
申请号：US11032026
申请日：2005-01-11
申请人： Takeshi Satou , Toshihiko Itoga , Takeo Shiba
发明人： Takeshi Satou , Toshihiko Itoga , Takeo Shiba
IPC分类号： H01L29/76 , H01L31/036 , H01L31/112 , H01L29/90 , H01L27/01
CPC分类号： H01L27/1237 , H01L27/1255 , H01L29/42384 , H01L29/78621 , H01L29/78627 , H01L29/78645
摘要： This invention provides a manufacturing method for fabricating on the same substrate both high voltage thin film transistors suitable for driving liquid crystal and low voltage drive high performance thin film transistors. In addition, this invention provides a thin film transistor substrate where the area occupied by a storage capacitor in each pixel is reduced to raise the aperture ratio of the display unit.One aspect of this invention provides a manufacturing method characterized in that the impurity regions of both high voltage thin film transistors and high performance thin film transistors which differ in the thickness of gate insulation are formed by implanting a dopant through the same two-layered film. Another aspect of this invention reduces the area occupied by the drive circuit in the display unit by utilizing an extension of one layer of the insulation film included in each thin film transistor.
摘要翻译：本发明提供一种制造方法，用于在同一衬底上制造适于驱动液晶的高电压薄膜晶体管和低电压驱动高性能薄膜晶体管。此外，本发明提供一种薄膜晶体管基板，其中减少了每个像素中的存储电容器占据的面积以提高显示单元的开口率。本发明的一个方面提供一种制造方法，其特征在于，通过将相同的双层膜注入掺杂剂，形成栅极绝缘层厚度不同的高电压薄膜晶体管和高性能薄膜晶体管的杂质区域。本发明的另一方面通过利用包括在每个薄膜晶体管中的一层绝缘膜的延伸来减小显示单元中的驱动电路占据的面积。

9. 发明授权

US06993674B2 System LSI architecture and method for controlling the clock of a data processing system through the use of instructions 失效
标题翻译：用于通过使用指令控制数据处理系统的时钟的系统LSI架构和方法
公开(公告)号：US06993674B2
公开(公告)日：2006-01-31
申请号：US10320622
申请日：2002-12-17
申请人： Toshiaki Kitajima , Takeshi Satou
发明人： Toshiaki Kitajima , Takeshi Satou
IPC分类号： G06F1/04
CPC分类号： G06F9/30083 , G06F1/3203 , G06F1/3237 , G06F1/3243 , G06F1/3275 , G06F1/3287 , G06F9/3877 , Y02D10/128 , Y02D10/14 , Y02D10/152 , Y02D10/171
摘要： A data processing system includes a general-purpose data processing unit (PU) including an instruction issuing unit that fetches and decodes an instruction in a program and issues the instruction and an execution unit that executes general-purpose processing according to a general-purpose instruction in the program; a special-purpose data processing unit (VU), including a data path unit for special-purpose data processing, that executes special-purpose data processing according to a special-purpose instruction in the program; and a first clock supply unit for stopping, based on a wait signal that is issued by the VU and shows that the PU is waiting for processing of the VU, a first clock signal for a part of the PU.
摘要翻译：数据处理系统包括通用数据处理单元（PU），该通用数据处理单元包括：指令发布单元，用于取得和解码程序中的指令并发出指令;以及执行单元，该执行单元根据通用指令执行通用处理在程序中专用数据处理单元（VU），包括用于专用数据处理的数据路径单元，其执行根据程序中的专用指令的专用数据处理; 以及第一时钟提供单元，用于基于由所述VU发出的等待信号，并且示出所述PU正在等待所述VU的处理，停止所述PU的一部分的第一时钟信号。

10. 发明申请

US20050121673A1 Manufacturing method of thin film transistor substrate 失效
标题翻译：薄膜晶体管衬底的制造方法
公开(公告)号：US20050121673A1
公开(公告)日：2005-06-09
申请号：US11032026
申请日：2005-01-11
申请人： Takeshi Satou , Toshihiko Itoga , Takeo Shiba
发明人： Takeshi Satou , Toshihiko Itoga , Takeo Shiba
IPC分类号： G02F1/1368 , H01L21/20 , H01L21/336 , H01L21/77 , H01L21/8234 , H01L21/84 , H01L27/08 , H01L27/088 , H01L27/12 , H01L27/13 , H01L29/423 , H01L29/786 , H01L29/10
CPC分类号： H01L27/1237 , H01L27/1255 , H01L29/42384 , H01L29/78621 , H01L29/78627 , H01L29/78645
摘要： This invention provides a manufacturing method for fabricating on the same substrate both high voltage thin film transistors suitable for driving liquid crystal and low voltage drive high performance thin film transistors. In addition, this invention provides a thin film transistor substrate where the area occupied by a storage capacitor in each pixel is reduced to raise the aperture ratio of the display unit. One aspect of this invention provides a manufacturing method characterized in that the impurity regions of both high voltage thin film transistors and high performance thin film transistors which differ in the thickness of gate insulation are formed by implanting a dopant through the same two-layered film. Another aspect of this invention reduces the area occupied by the drive circuit in the display unit by utilizing an extension of one layer of the insulation film included in each thin film transistor.
摘要翻译：本发明提供一种制造方法，用于在同一衬底上制造适于驱动液晶的高电压薄膜晶体管和低电压驱动高性能薄膜晶体管。此外，本发明提供一种薄膜晶体管基板，其中减少了每个像素中的存储电容器占据的面积以提高显示单元的开口率。本发明的一个方面提供一种制造方法，其特征在于，通过将相同的双层膜注入掺杂剂，形成栅极绝缘层厚度不同的高电压薄膜晶体管和高性能薄膜晶体管的杂质区域。本发明的另一方面通过利用包括在每个薄膜晶体管中的一层绝缘膜的延伸来减小显示单元中的驱动电路占据的面积。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式