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1. 发明申请

US20130126906A1 SILICON CARBIDE EPITAXIAL WAFER AND MANUFACTURING METHOD THEREFOR, SILICON CARBIDE BULK SUBSTRATE FOR EPITAXIAL GROWTH AND MANUFACTURING METHOD THEREFOR AND HEAT TREATMENT APPARATUS 有权
标题翻译：硅碳化硅外延晶片及其制造方法，用于外延生长的硅碳化硅基板及其制造方法及热处理设备
公开(公告)号：US20130126906A1
公开(公告)日：2013-05-23
申请号：US13696943
申请日：2011-03-18
申请人： Nobuyuki Tomita , Kenichi Hamano , Masayoshi Tarutani , Yoichiro Mitani , Takeharu Kuroiwa , Masayuki Imaizumi , Hiroaki Sumitani , Kenichi Ohtsuka , Tomoaki Furusho , Takao Sawada , Yuji Abe
发明人： Nobuyuki Tomita , Kenichi Hamano , Masayoshi Tarutani , Yoichiro Mitani , Takeharu Kuroiwa , Masayuki Imaizumi , Hiroaki Sumitani , Kenichi Ohtsuka , Tomoaki Furusho , Takao Sawada , Yuji Abe
IPC分类号： H01L21/02 , H01L29/16
CPC分类号： H01L21/02529 , C30B25/02 , C30B25/186 , C30B29/36 , H01L21/02378 , H01L21/02433 , H01L21/02587 , H01L21/0262 , H01L21/02661 , H01L21/6719 , H01L21/68771 , H01L29/1608
摘要： A method is provided in order to manufacture a silicon carbide epitaxial wafer whose surface flatness is very good and has a very low density of carrot defects and triangular defects arising after epitaxial growth. The silicon carbide epitaxial wafer is manufactured by a first step of annealing a silicon carbide bulk substrate that is tilted less than 5 degrees from face, in a reducing gas atmosphere at a first temperature T1 for a treatment time t, a second step of reducing the temperature of the substrate in the reducing gas atmosphere, and a third step of performing epitaxial growth at a second temperature T2 below the annealing temperature T1 in the first step, while supplying at least a gas including silicon atoms and a gas including carbon atoms.
摘要翻译：提供了一种方法来制造其表面平坦度非常好并且具有非常低的胡萝卜缺陷密度和外延生长后产生的三角形缺陷的碳化硅外延晶片。碳化硅外延晶片是通过第一步骤，在还原气体气氛中，在第一温度T1处理处理时间t，退火碳化硅本体衬底，其从<0001>面倾斜小于5度;第二步骤在第一步骤中，在低于退火温度T1的第二温度T2下进行外延生长的第三步骤，同时至少提供包含硅原子的气体和包括碳的气体原子

2. 发明授权

US08569106B2 Method for manufacturing silicon carbide semiconductor device 有权
标题翻译：制造碳化硅半导体器件的方法
公开(公告)号：US08569106B2
公开(公告)日：2013-10-29
申请号：US13148537
申请日：2010-02-15
申请人： Kenichi Hamano , Kenichi Ohtsuka , Nobuyuki Tomita , Masayoshi Tarutani
发明人： Kenichi Hamano , Kenichi Ohtsuka , Nobuyuki Tomita , Masayoshi Tarutani
IPC分类号： H01L21/00
CPC分类号： H01L29/7802 , C30B25/02 , C30B29/36 , H01L21/02378 , H01L21/02433 , H01L21/02447 , H01L21/02529 , H01L21/0262 , H01L29/045 , H01L29/0878 , H01L29/1608 , H01L29/6606 , H01L29/66068 , H01L29/7395 , H01L29/7828 , H01L29/872
摘要： A film of an epitaxial layer that allows the reduction in both the height of a bunching step and crystal defects caused by a failure in migration of reactive species on a terrace is formed on a SiC semiconductor substrate having an off angle of 5 degrees or less. A film of a first-layer epitaxial layer is formed on and in contact with a surface of the SiC semiconductor substrate having an off angle of 5 degrees or less. Subsequently, the temperature in a reactor is lowered. A second-layer epitaxial layer is caused to epitaxially grow on and in contact with a surface of the first-layer epitaxial layer. In the above-described manner, the epitaxial layer is structured with two layers, and the growth temperature for the second epitaxial layer is set lower than the growth temperature for the first epitaxial layer.
摘要翻译：在偏离角度为5度以下的SiC半导体基板上，形成外延层的薄膜，该外延层能够降低聚束步骤的高度，并且由于活性物质在平台上的迁移失败而导致的晶体缺陷。第一层外延层的膜形成在具有5度或更小的偏离角的SiC半导体衬底的表面上并与之接触。随后，反应器中的温度降低。使第二层外延层在第一层外延层的表面上外延生长并与其接触。以上述方式，外延层由两层构成，第二外延层的生长温度被设定为低于第一外延层的生长温度。

3. 发明申请

US20110312161A1 METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE 有权
标题翻译：制造碳化硅半导体器件的方法
公开(公告)号：US20110312161A1
公开(公告)日：2011-12-22
申请号：US13148537
申请日：2010-02-15
申请人： Kenichi Hamano , Kenichi Ohtsuka , Nobuyuki Tomita , Masayoshi Tarutani
发明人： Kenichi Hamano , Kenichi Ohtsuka , Nobuyuki Tomita , Masayoshi Tarutani
IPC分类号： H01L21/20
CPC分类号： H01L29/7802 , C30B25/02 , C30B29/36 , H01L21/02378 , H01L21/02433 , H01L21/02447 , H01L21/02529 , H01L21/0262 , H01L29/045 , H01L29/0878 , H01L29/1608 , H01L29/6606 , H01L29/66068 , H01L29/7395 , H01L29/7828 , H01L29/872
摘要： A film of an epitaxial layer that allows the reduction in both the height of a bunching step and crystal defects caused by a failure in migration of reactive species on a terrace is formed on a SiC semiconductor substrate having an off angle of 5 degrees or less. A film of a first-layer epitaxial layer is formed on and in contact with a surface of the SiC semiconductor substrate having an off angle of 5 degrees or less. Subsequently, the temperature in a reactor is lowered. A second-layer epitaxial layer is caused to epitaxially grow on and in contact with a surface of the first-layer epitaxial layer. In the above-described manner, the epitaxial layer is structured with two layers, and the growth temperature for the second epitaxial layer is set lower than the growth temperature for the first epitaxial layer.
摘要翻译：在偏离角度为5度以下的SiC半导体基板上，形成外延层的薄膜，该外延层能够降低聚束步骤的高度，并且由于活性物质在平台上的迁移失败而导致的晶体缺陷。第一层外延层的膜形成在具有5度或更小的偏离角的SiC半导体衬底的表面上并与之接触。随后，反应器中的温度降低。使第二层外延层在第一层外延层的表面上外延生长并与其接触。以上述方式，外延层由两层构成，第二外延层的生长温度被设定为低于第一外延层的生长温度。

4. 发明授权

US08679952B2 Method of manufacturing silicon carbide epitaxial wafer 有权
标题翻译：制造碳化硅外延片的方法
公开(公告)号：US08679952B2
公开(公告)日：2014-03-25
申请号：US13696943
申请日：2011-03-18
申请人： Nobuyuki Tomita , Kenichi Hamano , Masayoshi Tarutani , Yoichiro Mitani , Takeharu Kuroiwa , Masayuki Imaizumi , Hiroaki Sumitani , Kenichi Ohtsuka , Tomoaki Furusho , Takao Sawada , Yuji Abe
发明人： Nobuyuki Tomita , Kenichi Hamano , Masayoshi Tarutani , Yoichiro Mitani , Takeharu Kuroiwa , Masayuki Imaizumi , Hiroaki Sumitani , Kenichi Ohtsuka , Tomoaki Furusho , Takao Sawada , Yuji Abe
IPC分类号： H01L21/20
CPC分类号： H01L21/02529 , C30B25/02 , C30B25/186 , C30B29/36 , H01L21/02378 , H01L21/02433 , H01L21/02587 , H01L21/0262 , H01L21/02661 , H01L21/6719 , H01L21/68771 , H01L29/1608
摘要： A method is provided in order to manufacture a silicon carbide epitaxial wafer whose surface flatness is very good and has a very low density of carrot defects and triangular defects arising after epitaxial growth. The silicon carbide epitaxial wafer is manufactured by a first step of annealing a silicon carbide bulk substrate that is tilted less than 5 degrees from face, in a reducing gas atmosphere at a first temperature T1 for a treatment time t, a second step of reducing the temperature of the substrate in the reducing gas atmosphere, and a third step of performing epitaxial growth at a second temperature T2 below the annealing temperature T1 in the first step, while supplying at least a gas including silicon atoms and a gas including carbon atoms.
摘要翻译：提供了一种方法来制造其表面平坦度非常好并且具有非常低的胡萝卜缺陷密度和外延生长后产生的三角形缺陷的碳化硅外延晶片。碳化硅外延晶片是通过第一步骤，在还原气体气氛中，在第一温度T1处理处理时间t，退火碳化硅本体衬底，其从<0001>面倾斜小于5度;第二步骤在第一步骤中，在低于退火温度T1的第二温度T2下进行外延生长的第三步骤，同时至少提供包含硅原子的气体和包括碳的气体原子

5. 发明申请

US20130099253A1 EPITAXIAL WAFER AND SEMICONDUCTOR DEVICE 有权
标题翻译：外延波形和半导体器件
公开(公告)号：US20130099253A1
公开(公告)日：2013-04-25
申请号：US13808382
申请日：2011-07-14
申请人： Kenichi Ohtsuka , Nobuyuki Tomita , Tomoaki Furusho
发明人： Kenichi Ohtsuka , Nobuyuki Tomita , Tomoaki Furusho
IPC分类号： H01L29/16
CPC分类号： H01L29/1608 , H01L21/02447 , H01L21/02507 , H01L21/02529 , H01L21/02573 , H01L21/0262 , H01L29/6606 , H01L29/66068
摘要： A semiconductor device that can suppress deterioration in crystal quality caused by a lattice mismatch between a substrate and an epitaxial layer and that also can ensure a voltage sustaining performance, and a wafer for forming the semiconductor device. An epitaxial wafer of silicon carbide (SiC), which is used for manufacturing a semiconductor device, includes a low resistance substrate and an epitaxial layer provided thereon. The epitaxial layer is doped with the same dopant as a dopant doped into the substrate, and has a laminated structure including a low concentration layer and an ultrathin high concentration layer. A doping concentration in the low concentration layer is lower than that in the silicon carbide substrate. A doping concentration in the ultrathin high concentration layer is equal to that in the silicon carbide substrate.
摘要翻译：能够抑制由基板与外延层之间的晶格失配引起的晶体质量下降的半导体器件，并且还可以确保电压维持性能，以及用于形成半导体器件的晶片。用于制造半导体器件的碳化硅（SiC）的外延晶片包括低电阻基板和设置在其上的外延层。外延层掺杂有与掺杂到衬底中的掺杂剂相同的掺杂剂，并且具有包括低浓度层和超薄高浓度层的层压结构。低浓度层中的掺杂浓度低于碳化硅衬底中的掺杂浓度。超薄高浓度层中的掺杂浓度等于碳化硅衬底中的掺杂浓度。

6. 发明授权

US08916880B2 Silicon carbide epitaxial wafer and semiconductor device 有权
标题翻译：碳化硅外延片和半导体器件
公开(公告)号：US08916880B2
公开(公告)日：2014-12-23
申请号：US13808382
申请日：2011-07-14
申请人： Kenichi Ohtsuka , Nobuyuki Tomita , Tomoaki Furusho
发明人： Kenichi Ohtsuka , Nobuyuki Tomita , Tomoaki Furusho
IPC分类号： H01L29/16 , H01L21/02 , H01L29/66
CPC分类号： H01L29/1608 , H01L21/02447 , H01L21/02507 , H01L21/02529 , H01L21/02573 , H01L21/0262 , H01L29/6606 , H01L29/66068
摘要： A semiconductor device that can suppress deterioration in crystal quality caused by a lattice mismatch between a substrate and an epitaxial layer and that also can ensure a voltage sustaining performance, and a wafer for forming the semiconductor device. An epitaxial wafer of silicon carbide (SiC), which is used for manufacturing a semiconductor device, includes a low resistance substrate and an epitaxial layer provided thereon. The epitaxial layer is doped with the same dopant as a dopant doped into the substrate, and has a laminated structure including a low concentration layer and an ultrathin high concentration layer. A doping concentration in the low concentration layer is lower than that in the silicon carbide substrate. A doping concentration in the ultrathin high concentration layer is equal to that in the silicon carbide substrate.
摘要翻译：能够抑制由基板与外延层之间的晶格失配引起的晶体质量下降的半导体器件，并且还可以确保电压维持性能，以及用于形成半导体器件的晶片。用于制造半导体器件的碳化硅（SiC）的外延晶片包括低电阻基板和设置在其上的外延层。外延层掺杂有与掺杂到衬底中的掺杂剂相同的掺杂剂，并且具有包括低浓度层和超薄高浓度层的层压结构。低浓度层中的掺杂浓度低于碳化硅衬底中的掺杂浓度。超薄高浓度层中的掺杂浓度等于碳化硅衬底中的掺杂浓度。

7. 发明申请

US20100289056A1 SEMICONDUCTOR LIGHT-EMITTING DEVICES 审中-公开
标题翻译：半导体发光器件
公开(公告)号：US20100289056A1
公开(公告)日：2010-11-18
申请号：US12835772
申请日：2010-07-14
申请人： Akihito Ohno , Masayoshi Takemi , Nobuyuki Tomita
发明人： Akihito Ohno , Masayoshi Takemi , Nobuyuki Tomita
IPC分类号： H01L33/12
CPC分类号： H01S5/22 , B82Y20/00 , H01L33/02 , H01L33/32 , H01S5/0021 , H01S5/2009 , H01S5/2201 , H01S5/305 , H01S5/3063 , H01S5/3072 , H01S5/3077 , H01S5/34333 , H01S2304/04
摘要： A semiconductor laser device comprises an n-type cladding layer, a p-type cladding layer, and an active layer which is sandwiched between the n-type cladding layer and the p-type cladding layer. The p-type cladding layer contains magnesium as a dopant impurity. Further, an n-type diffusion blocking layer of a nitride compound semiconductor material located between the active layer and the p-type cladding layer and is InxAlyGa1-x-yN, where x≧0, y≧0, and (x+y)
摘要翻译：半导体激光器件包括n型包覆层，p型覆层和夹在n型覆层和p型覆层之间的有源层。 p型包覆层含有镁作为掺杂剂杂质。此外，位于有源层和p型覆层之间的氮化物半导体材料的n型扩散阻挡层是In x Al y Ga 1-x-y N，其中x≥0，y≥0和（x + y） <1。 n型扩散阻挡层优选具有在5×1017cm-3至5×1019cm-3的范围内产生n型导电性的掺杂剂杂质的浓度。

8. 发明申请

US20080070387A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权
标题翻译：半导体器件制造方法
公开(公告)号：US20080070387A1
公开(公告)日：2008-03-20
申请号：US11941195
申请日：2007-11-16
申请人： Akihito Ohno , Masayoshi Takemi , Nobuyuki Tomita
发明人： Akihito Ohno , Masayoshi Takemi , Nobuyuki Tomita
IPC分类号： H01L21/20
CPC分类号： H01S5/2231 , B82Y20/00 , H01L33/16 , H01L33/32 , H01S5/0207 , H01S5/2201 , H01S5/2214 , H01S5/34333 , H01S2304/04
摘要： A technique is provided which enables formation of nitride semiconductor layers with excellent flatness and excellent crystallinity on a gallium nitride substrate (GaN substrate), while improving the producibility of the semiconductor device using the GaN substrate. A gallium nitride substrate is prepared which has an upper surface having an off-angle of not less than 0.1° nor more than 1.0° in a direction, with respect to a (0001) plane. Then, a plurality of nitride semiconductor layers including an n-type semiconductor layer are stacked on the upper surface of the gallium nitride substrate to form a semiconductor device such as a semiconductor laser.
摘要翻译：提供了一种能够在氮化镓衬底（GaN衬底）上形成具有优异的平坦度和优异的结晶度的氮化物半导体层的技术，同时提高了使用GaN衬底的半导体器件的可制造性。制备氮化镓衬底，其具有相对于（0001）面在<1-100>方向上具有不小于0.1°且不大于1.0°的偏角的上表面。然后，在氮化镓衬底的上表面上堆叠包括n型半导体层的多个氮化物半导体层，以形成诸如半导体激光器的半导体器件。

9. 发明申请

US20050230706A1 Avalanche photodiode 有权
标题翻译：雪崩光电二极管
公开(公告)号：US20050230706A1
公开(公告)日：2005-10-20
申请号：US11098558
申请日：2005-04-05
申请人： Eiji Yagyu , Nobuyuki Tomita , Eitaro Ishimura , Masaharu Nakaji
发明人： Eiji Yagyu , Nobuyuki Tomita , Eitaro Ishimura , Masaharu Nakaji
IPC分类号： H01L31/107 , H01L31/072
CPC分类号： H01L31/107
摘要： An objective is to provide an avalanche photodiode that is excellent in device characteristics such as reliability. An avalanche photodiode is provided, which includes a substrate 1 formed with a light receiving region 3 on a multiplication layer 119, and formed with layers of differing semiconductor type with the multiplication layer 119 intervening, a ring-shaped groove 7 formed on the end face of the substrate 1 on its light-receiving-region side, in such a way that the groove surrounds the light receiving region 3, and one or more steps 5 provided on a side wall of the ring-shaped groove 7, in a range of from ¼ to ¾ of the depth of the groove. In the avalanche photodiode described above, because one or more steps provided on the side wall of the ring-shaped groove in the range of from ¼ to ¾ of the depth of the groove, discontinuity at the edge of the ring-shaped groove can be effectively prevented from occurring; consequently, an avalanche photodiode excellent in device characteristics such as reliability can be obtained.
摘要翻译：目的是提供一种在可靠性等装置特性方面优异的雪崩光电二极管。提供了一种雪崩光电二极管，其包括：在乘法层119上形成有受光区域3的基板1，并且形成有具有不同半导体类型的层和乘法层119，形成在端面上的环形槽7 基板1在其受光区域侧，使得沟槽围绕光接收区域3，以及设置在环形槽7的侧壁上的一个或多个台阶5在一定范围内从凹槽的深度的1/4到¾。在上述雪崩光电二极管中，由于在槽的深度的1/4至3/4的范围内设置在环状槽的侧壁上的一个或多个台阶，所以环形槽的边缘处的不连续性可以是有效防止发生; 因此，可以获得诸如可靠性的器件特性优异的雪崩光电二极管。

10. 发明授权

US5235786A Hourglass worm gear 失效
标题翻译：沙漏蜗轮
公开(公告)号：US5235786A
公开(公告)日：1993-08-17
申请号：US933206
申请日：1992-08-21
申请人： Tohru Kobayashi , Nobuyuki Tomita , Tsunetoshi Sonohara , Hiroshi Kawada , Shigeyuki Shimachi , Hiroshi Gunbara
发明人： Tohru Kobayashi , Nobuyuki Tomita , Tsunetoshi Sonohara , Hiroshi Kawada , Shigeyuki Shimachi , Hiroshi Gunbara
IPC分类号： B23F13/08 , F16H55/22
CPC分类号： B23F13/08 , F16H55/22
摘要： The improved hourglass worm gear which has been produced by grinding a blank for the worm gear by rotating a grinding wheel about a grinding wheel shaft A while turning the grinding wheel shaft A about a tool shaft A3 which extends in parallel with a wheel shaft A2 perpendicular to a worm shaft A1 is characterized in that a cross-sectional shape of the grinding wheel taken in a plane inclusive of the grinding wheel shaft A exhibits a circular arc.Since the cross-sectional shape of the grinding wheel for successively grinding a series of gear tooth surfaces on the hourglass worm gear is contoured in the form of a circular arc, the hourglass worm gear assures that a radius r of the circular arc has an increased degree of freedom and an ideal contact pattern can be obtained by properly adjusting the radius r.A contour of each gear tooth shape having few variation of gear tooth engagement is determined by correctly adjusting the radius r of the circular arc as well as various conditions associated with correct generation of a series of gear tooth surfaces on the worm gear in order to assure the ideal contact pattern regardless of displacement of shafts as well as displacement of each gear tooth under a large magnitude of load.
摘要翻译：改进的沙漏蜗轮通过在研磨轮轴A周围旋转研磨轮，同时使研磨轮轴A围绕与轴A2垂直延伸的工具轴A3旋转而研磨用于蜗轮的坯料而制造的蜗杆轴A1的特征在于，在包括砂轮轴A的平面中的砂轮的横截面形状呈圆弧状。由于用于连续磨削沙漏蜗轮上的一系列齿轮齿面的砂轮的横截面形状是圆弧形的轮廓，所以沙漏蜗轮确保圆弧的半径r增加通过适当调整半径r可以获得自由度和理想接触图形。通过正确调整圆弧的半径r以及与蜗轮上的一系列齿轮齿面正确生成相关的各种条件来确定齿轮齿啮合变化较小的每个齿轮齿轮的轮廓，以确保理想的接触图形，无论轴的位移以及在大载荷下各齿轮的位移。

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