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1. 发明授权

US07187013B2 Avalanche photodiode 有权
标题翻译：雪崩光电二极管
公开(公告)号：US07187013B2
公开(公告)日：2007-03-06
申请号：US11136466
申请日：2005-05-25
申请人： Masaharu Nakaji , Eitaro Ishimura , Eiji Yagyu , Nobuyuki Tomita
发明人： Masaharu Nakaji , Eitaro Ishimura , Eiji Yagyu , Nobuyuki Tomita
IPC分类号： H01L31/072 , H01L31/109 , H01L31/0328 , H01L31/0336
CPC分类号： H01L31/03046 , H01L31/107 , H01L31/1075 , Y02E10/544
摘要： An avalanche photodiode has improved low-noise characteristics, high-speed response characteristics, and sensitivity. The avalanche photodiode includes a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, a semiconductor multiplication layer interposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, and a semiconductor light-absorbing layer interposed between the semiconductor multiplication layer and the second conductivity type semiconductor layer. The avalanche photodiode further comprises a multiplication suppressing layer which suppresses multiplication of charge carriers in the semiconductor light-absorbing layer, has a thickness of 0.6 μm or less, and is located between the semiconductor light-absorbing layer and the second conductivity type semiconductor layer. The thickness of the semiconductor light-absorbing layer is 0.5 μm or more.
摘要翻译：雪崩光电二极管具有改进的低噪声特性，高速响应特性和灵敏度。雪崩光电二极管包括第一导电类型半导体层，第二导电类型半导体层，介于第一导电类型半导体层和第二导电类型半导体层之间的半导体倍增层，以及插入在半导体乘法层和第二导电类型半导体层。雪崩光电二极管还包括抑制半导体光吸收层中的电荷载流子的倍增的增殖抑制层，其厚度为0.6μm以下，位于半导体光吸收层与第二导电型半导体层之间。半导体光吸收层的厚度为0.5μm以上。

2. 发明申请

US20060017129A1 Avalanche photodiode 有权
标题翻译：雪崩光电二极管
公开(公告)号：US20060017129A1
公开(公告)日：2006-01-26
申请号：US11136466
申请日：2005-05-25
申请人： Masaharu Nakaji , Eitaro Ishimura , Eiji Yagyu , Nobuyuki Tomita
发明人： Masaharu Nakaji , Eitaro Ishimura , Eiji Yagyu , Nobuyuki Tomita
IPC分类号： H01L29/732
CPC分类号： H01L31/03046 , H01L31/107 , H01L31/1075 , Y02E10/544
摘要： An avalanche photodiode has improved low-noise characteristics, high-speed response characteristics, and sensitivity. The avalanche photodiode includes a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, a semiconductor multiplication layer interposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, and a semiconductor light-absorbing layer interposed between the semiconductor multiplication layer and the second conductivity type semiconductor layer. The avalanche photodiode further comprises a multiplication suppressing layer which suppresses multiplication of charge carriers in the semiconductor light-absorbing layer, has a thickness of 0.6 μm or less, and is located between the semiconductor light-absorbing layer and the second conductivity type semiconductor layer. The thickness of the semiconductor light-absorbing layer is 0.5 μm or more.
摘要翻译：雪崩光电二极管具有改进的低噪声特性，高速响应特性和灵敏度。雪崩光电二极管包括第一导电类型半导体层，第二导电类型半导体层，介于第一导电类型半导体层和第二导电类型半导体层之间的半导体倍增层，以及插入在半导体乘法层和第二导电类型半导体层。雪崩光电二极管还包括抑制半导体光吸收层中的载流子的倍增的增殖抑制层，其厚度为0.6μm以下，位于半导体光吸收层与第二导电型半导体层之间。半导体光吸收层的厚度为0.5μm以上。

3. 发明申请

US20050230706A1 Avalanche photodiode 有权
标题翻译：雪崩光电二极管
公开(公告)号：US20050230706A1
公开(公告)日：2005-10-20
申请号：US11098558
申请日：2005-04-05
申请人： Eiji Yagyu , Nobuyuki Tomita , Eitaro Ishimura , Masaharu Nakaji
发明人： Eiji Yagyu , Nobuyuki Tomita , Eitaro Ishimura , Masaharu Nakaji
IPC分类号： H01L31/107 , H01L31/072
CPC分类号： H01L31/107
摘要： An objective is to provide an avalanche photodiode that is excellent in device characteristics such as reliability. An avalanche photodiode is provided, which includes a substrate 1 formed with a light receiving region 3 on a multiplication layer 119, and formed with layers of differing semiconductor type with the multiplication layer 119 intervening, a ring-shaped groove 7 formed on the end face of the substrate 1 on its light-receiving-region side, in such a way that the groove surrounds the light receiving region 3, and one or more steps 5 provided on a side wall of the ring-shaped groove 7, in a range of from ¼ to ¾ of the depth of the groove. In the avalanche photodiode described above, because one or more steps provided on the side wall of the ring-shaped groove in the range of from ¼ to ¾ of the depth of the groove, discontinuity at the edge of the ring-shaped groove can be effectively prevented from occurring; consequently, an avalanche photodiode excellent in device characteristics such as reliability can be obtained.
摘要翻译：目的是提供一种在可靠性等装置特性方面优异的雪崩光电二极管。提供了一种雪崩光电二极管，其包括：在乘法层119上形成有受光区域3的基板1，并且形成有具有不同半导体类型的层和乘法层119，形成在端面上的环形槽7 基板1在其受光区域侧，使得沟槽围绕光接收区域3，以及设置在环形槽7的侧壁上的一个或多个台阶5在一定范围内从凹槽的深度的1/4到¾。在上述雪崩光电二极管中，由于在槽的深度的1/4至3/4的范围内设置在环状槽的侧壁上的一个或多个台阶，所以环形槽的边缘处的不连续性可以是有效防止发生; 因此，可以获得诸如可靠性的器件特性优异的雪崩光电二极管。

4. 发明授权

US07462889B2 Avalanche photodiode 有权
标题翻译：雪崩光电二极管
公开(公告)号：US07462889B2
公开(公告)日：2008-12-09
申请号：US11088770
申请日：2005-03-25
申请人： Eiji Yagyu , Nobuyuki Tomita , Eitaro Ishimura , Masaharu Nakaji
发明人： Eiji Yagyu , Nobuyuki Tomita , Eitaro Ishimura , Masaharu Nakaji
IPC分类号： H01L31/107
CPC分类号： H01L31/1075 , H01L31/022416
摘要： An avalanche photodiode according to this invention include a light receiving region 101 surrounded by a ring-shaped trench 13, a first electrode 11 formed on the light receiving region 101, a second electrode 12 formed on the periphery of the ring-shaped trench 13 surrounding the light receiving region, a first semiconductor layer lying just under the first electrode 11, and a second semiconductor layer lying just under the second electrode 12. Conductivity types of the first semiconductor and the second semiconductor are identical.
摘要翻译：根据本发明的雪崩光电二极管包括被环形沟槽13包围的光接收区域101，形成在光接收区域101上的第一电极11，形成在环形沟槽13周围的第二电极12 光接收区域，位于第一电极11正下方的第一半导体层，以及位于第二电极12正下方的第二半导体层。第一半导体和第二半导体的导电类型相同。

5. 发明授权

US07345325B2 Avalanche photodiode 有权
标题翻译：雪崩光电二极管
公开(公告)号：US07345325B2
公开(公告)日：2008-03-18
申请号：US11670576
申请日：2007-02-02
申请人： Masaharu Nakaji , Eitaro Ishimura , Eiji Yagyu , Nobuyuki Tomita
发明人： Masaharu Nakaji , Eitaro Ishimura , Eiji Yagyu , Nobuyuki Tomita
IPC分类号： H01L31/72
CPC分类号： H01L31/03046 , H01L31/107 , H01L31/1075 , Y02E10/544
摘要： An avalanche photodiode has improved low-noise characteristics, high-speed response characteristics, and sensitivity. The avalanche photodiode includes a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, a semiconductor multiplication layer interposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, and a semiconductor light-absorbing layer interposed between the semiconductor multiplication layer and the second conductivity type semiconductor layer. The avalanche photodiode further comprises a multiplication suppressing layer which suppresses multiplication of charge carriers in the semiconductor light-absorbing layer, located between the semiconductor light-absorbing layer and the second conductivity type semiconductor layer.
摘要翻译：雪崩光电二极管具有改进的低噪声特性，高速响应特性和灵敏度。雪崩光电二极管包括第一导电类型半导体层，第二导电类型半导体层，介于第一导电类型半导体层和第二导电类型半导体层之间的半导体倍增层，以及插入在半导体乘法层和第二导电类型半导体层。雪崩光电二极管还包括乘法抑制层，其抑制位于半导体光吸收层和第二导电类型半导体层之间的半导体光吸收层中的载流子的乘法。

6. 发明授权

US07259408B2 Avalanche photodiode 有权
标题翻译：雪崩光电二极管
公开(公告)号：US07259408B2
公开(公告)日：2007-08-21
申请号：US11098558
申请日：2005-04-05
申请人： Eiji Yagyu , Nobuyuki Tomita , Eitaro Ishimura , Masaharu Nakaji
发明人： Eiji Yagyu , Nobuyuki Tomita , Eitaro Ishimura , Masaharu Nakaji
IPC分类号： H01L21/0328
CPC分类号： H01L31/107
摘要： An objective is to provide an avalanche photodiode that is excellent in device characteristics such as reliability. An avalanche photodiode is provided, which includes a substrate 1 formed with a light receiving region 3 on a multiplication layer 119, and formed with layers of differing semiconductor type with the multiplication layer 119 intervening, a ring-shaped groove 7 formed on the end face of the substrate 1 on its light-receiving-region side, in such a way that the groove surrounds the light receiving region 3, and one or more steps 5 provided on a side wall of the ring-shaped groove 7, in a range of from ¼ to ¾ of the depth of the groove. In the avalanche photodiode described above, because one or more steps provided on the side wall of the ring-shaped groove in the range of from ¼ to ¾ of the depth of the groove, discontinuity at the edge of the ring-shaped groove can be effectively prevented from occurring; consequently, an avalanche photodiode excellent in device characteristics such as reliability can be obtained.
摘要翻译：目的是提供一种在可靠性等装置特性方面优异的雪崩光电二极管。提供了一种雪崩光电二极管，其包括在乘法层119上形成有受光区域3的基板1，并且形成有具有不同半导体类型的层和乘法层119，环形槽7形成在端面基板1在其受光区域侧，使得沟槽围绕光接收区域3，以及设置在环形槽7的侧壁上的一个或多个台阶5在一定范围内从凹槽的深度的1/4到¾。在上述雪崩光电二极管中，由于在槽的深度的1/4至3/4的范围内设置在环状槽的侧壁上的一个或多个台阶，所以环形槽的边缘处的不连续性可以是有效防止发生; 因此，可以获得诸如可靠性的器件特性优异的雪崩光电二极管。

7. 发明申请

US20050263787A1 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US20050263787A1
公开(公告)日：2005-12-01
申请号：US11038254
申请日：2005-01-21
申请人： Eitaro Ishimura , Masaharu Nakaji , Eiji Yagyu , Nobuyuki Tomita
发明人： Eitaro Ishimura , Masaharu Nakaji , Eiji Yagyu , Nobuyuki Tomita
IPC分类号： H01L31/107 , H01L29/861 , H01L31/0328
CPC分类号： H01L31/107
摘要： A semiconductor devices has a structure reducing resistances to a high frequency current. The semiconductor device includes a semi-insulating substrate, a first n-type layer made of a compound semiconductor, and a first p-type layer made of a compound semiconductor in which a signal current flows in a lateral direction, parallel to the semi-insulating substrate. The first p-type layer is sandwiched between the semi-insulating substrate and the first n-type layer. A second n type layer made of a compound semiconductor is between the semi-insulating substrate and the first p type layer. An alternating current component of the signal current flows through the second n type layer.
摘要翻译：半导体器件具有降低对高频电流的电阻的结构。半导体器件包括半绝缘衬底，由化合物半导体制成的第一n型层和由化合物半导体制成的第一p型层，其中信号电流在横向上流动，平行于半导体层，绝缘基板。第一p型层被夹在半绝缘衬底和第一n型层之间。由半导体制成的第二n型层位于半绝缘基板和第一p型层之间。信号电流的交流分量流过第二n型层。

8. 发明授权

US07038251B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US07038251B2
公开(公告)日：2006-05-02
申请号：US11038254
申请日：2005-01-21
申请人： Eitaro Ishimura , Masaharu Nakaji , Eiji Yagyu , Nobuyuki Tomita
发明人： Eitaro Ishimura , Masaharu Nakaji , Eiji Yagyu , Nobuyuki Tomita
IPC分类号： H01L29/732
CPC分类号： H01L31/107
摘要： A semiconductor device has a structure reducing resistances to a high frequency current. The semiconductor device includes a semi-insulating substrate, a first n-type layer made of a compound semiconductor, and a first p-type layer made of a compound semiconductor in which a signal current flows in a lateral direction, parallel to the semi-insulating substrate. The first p-type layer is sandwiched between the semi-insulating substrate and the first n-type layer. A second n type layer made of a compound semiconductor is between the semi-insulating substrate and the first p type layer. An alternating current component of the signal current flows through the second n type layer.
摘要翻译：半导体器件具有降低对高频电流的电阻的结构。半导体器件包括半绝缘衬底，由化合物半导体制成的第一n型层和由化合物半导体制成的第一p型层，其中信号电流在横向上流动，平行于半导体层，绝缘基板。第一p型层被夹在半绝缘衬底和第一n型层之间。由半导体制成的第二n型层位于半绝缘基板和第一p型层之间。信号电流的交流分量流过第二n型层。

9. 发明申请

US20050224839A1 Avalanche photodiode 有权
标题翻译：雪崩光电二极管
公开(公告)号：US20050224839A1
公开(公告)日：2005-10-13
申请号：US11088770
申请日：2005-03-25
申请人： Eiji Yagyu , Nobuyuki Tomita , Eitaro Ishimura , Masaharu Nakaji
发明人： Eiji Yagyu , Nobuyuki Tomita , Eitaro Ishimura , Masaharu Nakaji
IPC分类号： H01L31/107 , H01L31/0224 , H01L31/072
CPC分类号： H01L31/1075 , H01L31/022416
摘要： An avalanche photodiode according to this invention include a light receiving region 101 surrounded by a ring-shaped trench 13, a first electrode 11 formed on the light receiving region 101, a second electrode 12 formed on the periphery of the ring-shaped trench 13 surrounding the light receiving region, a first semiconductor layer lying just under the first electrode 11, and a second semiconductor layer lying just under the second electrode 12. Conductivity types of the first semiconductor and the second semiconductor are identical.
摘要翻译：根据本发明的雪崩光电二极管包括被环形沟槽13包围的光接收区域101，形成在光接收区域101上的第一电极11，形成在环形沟槽13周围的第二电极12 光接收区域，位于第一电极11正下方的第一半导体层，以及位于第二电极12正下方的第二半导体层。第一半导体和第二半导体的电导率相同。

10. 发明申请

US20090294787A1 OPTICAL SEMICONDUCTOR DEVICE 有权
标题翻译：光学半导体器件
公开(公告)号：US20090294787A1
公开(公告)日：2009-12-03
申请号：US12269206
申请日：2008-11-12
申请人： Masaharu Nakaji , Eitaro Ishimura , Eiji Yagyu
发明人： Masaharu Nakaji , Eitaro Ishimura , Eiji Yagyu
IPC分类号： H01L33/00
CPC分类号： H01L31/105 , B82Y20/00 , H01L31/02327 , H01L31/103 , H01L31/1075 , H01S5/18361 , H01S5/323 , H01S2301/173
摘要： An optical semiconductor device includes a distributed Bragg reflection layer of a first conductivity type, a distortion elaxation layer of the first conductivity type, a light absorbing layer, and a semiconductor layer of a second conductivity type, sequentially arranged on a semiconductor substrate. The distortion relaxation layer the same material as the semiconductor substrate. The total optical length of layers between the distributed Bragg reflection layer and the light absorbing layer is an integer multiple of one-half the wavelength of incident light that is detected.
摘要翻译：一种光半导体器件包括依次配置在半导体衬底上的第一导电类型的分布布拉格反射层，第一导电类型的失真拉伸层，光吸收层和第二导电类型的半导体层。失真弛豫层与半导体基板相同。分布布拉格反射层和光吸收层之间的层的总光学长度是检测到的入射光的波长的一半的整数倍。

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