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1. 发明授权

US08004006B2 Nitride semiconductor light emitting element 有权
标题翻译：氮化物半导体发光元件
公开(公告)号：US08004006B2
公开(公告)日：2011-08-23
申请号：US12084634
申请日：2006-11-07
申请人： Ken Nakahara , Atsushi Yamaguchi
发明人： Ken Nakahara , Atsushi Yamaguchi
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L21/78 , H01L33/0095 , H01L33/44
摘要： Provided are a nitride semiconductor light emitting element which does not suffer a damage on a light emitting region and has a high luminance without deterioration, even though the nitride semiconductor light emitting element is one in which electrodes are disposed opposite to each other and an isolation trench for chip separation and laser lift-off is formed by etching; and a manufacturing method thereof. An n-type nitride semiconductor layer 2 has a step, formed in a position beyond an active layer 3 when viewed from a p side. Up to the position of this step A, a protective insulating film 6 covers a part of the n-type nitride semiconductor layer 2, the active layer 3, a p-type nitride semiconductor layer 4, the side of a p electrode 5 and a part of the top side of the p electrode 5. The use of a structure having a chip side face covered with the protective insulating film 6 prevents the active layer or the like from being exposed to an etching gas for a long time when an isolation trench for chip separation or laser lift-off is formed by etching.
摘要翻译：提供一种氮化物半导体发光元件，即使氮化物半导体发光元件是彼此相对设置的电极和隔离沟槽，也不会对发光区域造成损害并具有高亮度而不劣化通过蚀刻形成芯片分离和激光剥离; 及其制造方法。当从p侧观察时，n型氮化物半导体层2具有形成在超过有源层3的位置的台阶。直到该步骤A的位置，保护绝缘膜6覆盖n型氮化物半导体层2，有源层3，p型氮化物半导体层4，p型电极5的一侧以及部分使用由保护绝缘膜6覆盖的具有芯片侧面的结构使得有源层等长时间暴露于蚀刻气体时，当用于通过蚀刻形成芯片分离或激光剥离。

2. 发明申请

US20090127570A1 Double Wavelength Semiconductor Light Emitting Device and Method of Manufacturing the Same 失效
标题翻译：双波长半导体发光器件及其制造方法
公开(公告)号：US20090127570A1
公开(公告)日：2009-05-21
申请号：US12224287
申请日：2007-02-23
申请人： Shinichi Tamai , Ken Nakahara , Atsushi Yamaguchi
发明人： Shinichi Tamai , Ken Nakahara , Atsushi Yamaguchi
IPC分类号： H01L21/20 , H01L33/00
CPC分类号： H01S5/4031 , B82Y20/00 , H01S5/0425 , H01S5/20 , H01S5/22 , H01S5/2214 , H01S5/305 , H01S5/3063 , H01S5/3211 , H01S5/34333 , H01S5/4087 , H01S2304/04
摘要： Provided are a double wavelength semiconductor light emitting device, having an n electrode and p electrode disposed on the same surface side, in which the area of a chip is reduced to increase the number of chips taken from one single wafer, in which light focusing performance of double wavelength optical beams are improved, and in which an active layer of a light emitting element having a longer wavelength can be prevented from deteriorating in a process of manufacturing; and a method of manufacturing the same.Semiconductor lasers D1 and D2 as two light emitting elements having different wavelengths are integrally formed on a common substrate 1. A semiconductor laminate A is deposited on an n-type contact layer 21 in a semiconductor laser D1, and a semiconductor laminate B is deposited in a semiconductor laser D2. The semiconductor laminate A and semiconductor laminate B are configured to have different layer structures. An n electrode 12 formed between the semiconductor lasers D1 and D2 is shared by the semiconductor lasers D1 and D2, and serves as a common electrode on an n side. Additionally, the semiconductor laminate having a shorter wavelength is crystal-grown firstly.
摘要翻译：提供了一种双波长半导体发光器件，其具有设置在同一表面侧的n电极和p电极，其中芯片的面积减小以增加从单个晶片获取的芯片的数量，其中光聚焦性能双波长光束的改善，其中可以防止在制造过程中具有较长波长的发光元件的有源层劣化; 及其制造方法。作为具有不同波长的两个发光元件的半导体激光器D1和D2一体地形成在公共基板1上。半导体层叠体A沉积在半导体激光器D1中的n型接触层21上，并且半导体层叠体B沉积在半导体激光器D2。半导体层叠体A和半导体层叠体B具有不同的层结构。形成在半导体激光器D1和D2之间的n电极12由半导体激光器D1和D2共享，并且用作n侧的公共电极。此外，首先将具有较短波长的半导体层叠体晶体生长。

3. 发明申请

US20090026475A1 Semiconductor Light Emitting Device and Method for Manufacturing the Same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20090026475A1
公开(公告)日：2009-01-29
申请号：US12087173
申请日：2006-12-28
申请人： Atsushi Yamaguchi , Ken Nakahara
发明人： Atsushi Yamaguchi , Ken Nakahara
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/20 , H01L33/44 , H01L2933/0083
摘要： Concaves and convexes are formed in a light transmitting conductive layer provided on a surface of a light emitting device made of nitride semiconductor, thereby light emitted from a light emitting layer is totally reflected repeatedly in a semiconductor lamination portion and a substrate and can be effectively taken out without attenuation, and external quantum efficiency can be improved. A semiconductor lamination portion (6) is formed by laminating nitride semiconductor layers including an n-type layer (3) and a p-type layer (5) on one side of a substrate (1) so as to form a light emitting layer, and a light transmitting conductive layer (7) is provided at a surface side of the semiconductor lamination portion. A concave-convex pattern, i.e., concaves (7a), is provided on a surface of the light transmitting conductive layer. A p-side electrode (8) is provided on the light transmitting conductive layer, and an n-side electrode (9) is electrically connected to the n-type layer exposed by etching a part of the semiconductor lamination portion.
摘要翻译：凹凸形成在由氮化物半导体制成的发光元件的表面上的透光性导电层中，从发光层发出的光在半导体层叠部和基板中反复全反射，能够有效地取出没有衰减，可以提高外部量子效率。通过在衬底（1）的一侧层叠包括n型层（3）和p型层（5）的氮化物半导体层以形成发光层，形成半导体层叠部（6）并且在半导体层叠部的表面侧设置有透光性导电层（7）。在透光导电层的表面上设置凹凸图案，即凹部（7a）。 p侧电极（8）设置在透光导电层上，n侧电极（9）与通过蚀刻半导体层叠部分的一部分露出的n型层电连接。

4. 发明授权

US08124985B2 Semiconductor light emitting device and method for manufacturing the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US08124985B2
公开(公告)日：2012-02-28
申请号：US11815759
申请日：2006-02-07
申请人： Mitsuhiko Sakai , Atsushi Yamaguchi , Ken Nakahara , Masayuki Sonobe , Tsuyoshi Tsutsui
发明人： Mitsuhiko Sakai , Atsushi Yamaguchi , Ken Nakahara , Masayuki Sonobe , Tsuyoshi Tsutsui
IPC分类号： H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00
CPC分类号： H01L33/20 , H01L33/0079 , H01L33/60
摘要： There are provided a nitride semiconductor light emitting device having a structure enabling enhanced external quantum efficiency by effectively taking out light which is apt to repeat total reflection within a semiconductor lamination portion and a substrate and attenuate, and a method for manufacturing the same. A semiconductor lamination portion (6) including a first conductivity type layer and a second conductivity type layer, made of nitride semiconductor, is provided on a surface of the substrate (1) made of, for example, sapphire or the like. A first electrode (for example, p-side electrode (8)) is provided electrically connected to the first conductivity type layer (for example, p-type layer (5)) on a surface side of the semiconductor lamination portion (6), and a second electrode (for example, n-side electrode (9)) is provided electrically connected to the second conductivity type layer (for example, n-type layer (3)). A part of the semiconductor lamination portion (6) is removed at a surrounding region of a chip of the semiconductor lamination portion (6) by etching so that column portions (6a) stand side by side by leaving the semiconductor lamination portion without etching, and the n-type layer (3) expose around the column portions (6a).
摘要翻译：提供了具有通过有效地取出在半导体层叠部分和衬底内易于重复全反射的光而衰减的能够提高外部量子效率的结构的氮化物半导体发光器件及其制造方法。在由例如蓝宝石等制成的基板（1）的表面上设置包括由氮化物半导体构成的第一导电型层和第二导电型层的半导体层叠部（6）。第一电极（例如，p侧电极（8））在半导体层叠部分（6）的表面侧电连接到第一导电类型层（例如，p型层（5）），并且第二电极（例如，n侧电极（9））被设置为电连接到第二导电类型层（例如，n型层（3））。通过蚀刻在半导体层叠部（6）的芯片的周围区域去除半导体层叠部（6）的一部分，使得柱部（6a）不经蚀刻而离开半导体层叠部而并排放置，并且 n型层（3）围绕柱部（6a）露出。

5. 发明申请

US20090294784A1 Nitride Semiconductor Light Emitting Element and Method for Producing Nitride Semiconductor Light Emitting Element 有权
标题翻译：氮化物半导体发光元件和氮化物半导体发光元件的制造方法
公开(公告)号：US20090294784A1
公开(公告)日：2009-12-03
申请号：US12084634
申请日：2006-11-07
申请人： Ken Nakahara , Atsushi Yamaguchi
发明人： Ken Nakahara , Atsushi Yamaguchi
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L21/78 , H01L33/0095 , H01L33/44
摘要： Provided are a nitride semiconductor light emitting element which does not suffer a damage on a light emitting region and has a high luminance without deterioration, even though the nitride semiconductor light emitting element is one in which electrodes are disposed opposite to each other and an isolation trench for chip separation and laser lift-off is formed by etching; and a manufacturing method thereof. An n-type nitride semiconductor layer 2 has a step, formed in a position beyond an active layer 3 when viewed from a p side. Up to the position of this step A, a protective insulating film 6 covers a part of the n-type nitride semiconductor layer 2, the active layer 3, a p-type nitride semiconductor layer 4, the side of a p electrode 5 and a part of the top side of the p electrode 5. The use of a structure having a chip side face covered with the protective insulating film 6 prevents the active layer or the like from being exposed to an etching gas for a long time when an isolation trench for chip separation or laser lift-off is formed by etching.
摘要翻译：提供一种氮化物半导体发光元件，即使氮化物半导体发光元件是彼此相对设置的电极和隔离沟槽，也不会对发光区域造成损害并具有高亮度而不劣化通过蚀刻形成芯片分离和激光剥离; 及其制造方法。当从p侧观察时，n型氮化物半导体层2具有形成在超过有源层3的位置的台阶。直到该步骤A的位置，保护绝缘膜6覆盖n型氮化物半导体层2，有源层3，p型氮化物半导体层4，p型电极5的一侧和一部分使用由保护绝缘膜6覆盖的具有芯片侧面的结构使得有源层等长时间暴露于蚀刻气体时，当用于通过蚀刻形成芯片分离或激光剥离。

6. 发明授权

US08304795B2 Semiconductor light emitting device with concave-convex pattern and method for manufacturing the same 有权
标题翻译：具有凹凸图案的半导体发光器件及其制造方法
公开(公告)号：US08304795B2
公开(公告)日：2012-11-06
申请号：US12087173
申请日：2006-12-28
申请人： Atsushi Yamaguchi , Ken Nakahara
发明人： Atsushi Yamaguchi , Ken Nakahara
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/20 , H01L33/44 , H01L2933/0083
摘要： A semiconductor lamination portion (6) is formed by laminating nitride semiconductor layers including an n-type layer (3) and a p-type layer (5) on one side of a substrate (1) so as to form a light emitting layer, and a light transmitting conductive layer (7) is provided at a surface side of the semiconductor lamination portion. A concave-convex pattern, i.e., concaves (7a), is provided on a surface of the light transmitting conductive layer. A p-side electrode (8) is provided on the light transmitting conductive layer, and an n-side electrode (9) is electrically connected to the n-type layer exposed by etching a part of the semiconductor lamination portion. Light emitted from the light emitting layer is therefore totally reflected repeatedly in the semiconductor lamination portion and the substrate and can be effectively taken out without attenuation, so external quantum efficiency can be improved.
摘要翻译：通过在衬底（1）的一侧层叠包括n型层（3）和p型层（5）的氮化物半导体层以形成发光层，形成半导体层叠部（6）并且在半导体层叠部的表面侧设置有透光性导电层（7）。在透光导电层的表面上设置凹凸图案，即凹部（7a）。 p侧电极（8）设置在透光导电层上，n侧电极（9）与通过蚀刻半导体层叠部分的一部分露出的n型层电连接。因此，从半导体层叠部和基板反射全反射从发光层发出的光，能够有效地取出而不衰减，能够提高外部的量子效率。

7. 发明授权

US07745839B2 Double wavelength semiconductor light emitting device and method of manufacturing the same 失效
标题翻译：双波长半导体发光器件及其制造方法
公开(公告)号：US07745839B2
公开(公告)日：2010-06-29
申请号：US12224287
申请日：2007-02-23
申请人： Shinichi Tamai , Ken Nakahara , Atsushi Yamaguchi
发明人： Shinichi Tamai , Ken Nakahara , Atsushi Yamaguchi
IPC分类号： H01L33/00
CPC分类号： H01S5/4031 , B82Y20/00 , H01S5/0425 , H01S5/20 , H01S5/22 , H01S5/2214 , H01S5/305 , H01S5/3063 , H01S5/3211 , H01S5/34333 , H01S5/4087 , H01S2304/04
摘要： Provided are a double wavelength semiconductor light emitting device, having an n electrode and p electrode disposed on the same surface side, in which the area of a chip is reduced to increase the number of chips taken from one single wafer, in which light focusing performance of double wavelength optical beams are improved, and in which an active layer of a light emitting element having a longer wavelength can be prevented from deteriorating in a process of manufacturing; and a method of manufacturing the same.Semiconductor lasers D1 and D2 as two light emitting elements having different wavelengths are integrally formed on a common substrate 1. A semiconductor laminate A is deposited on an n-type contact layer 21 in a semiconductor laser D1, and a semiconductor laminate B is deposited in a semiconductor laser D2. The semiconductor laminate A and semiconductor laminate B are configured to have different layer structures. An n electrode 12 formed between the semiconductor lasers D1 and D2 is shared by the semiconductor lasers D1 and D2, and serves as a common electrode on an n side. Additionally, the semiconductor laminate having a shorter wavelength is crystal-grown firstly.
摘要翻译：提供了一种双波长半导体发光器件，其具有设置在同一表面侧的n电极和p电极，其中芯片的面积减小以增加从单个晶片获取的芯片的数量，其中光聚焦性能双波长光束的改善，其中可以防止在制造过程中具有较长波长的发光元件的有源层劣化; 及其制造方法。作为具有不同波长的两个发光元件的半导体激光器D1和D2一体地形成在公共基板1上。半导体层叠体A沉积在半导体激光器D1中的n型接触层21上，并且半导体层叠体B沉积在半导体激光器D2。半导体层叠体A和半导体层叠体B具有不同的层结构。形成在半导体激光器D1和D2之间的n电极12由半导体激光器D1和D2共享，并且用作n侧的公共电极。此外，首先将具有较短波长的半导体层叠体晶体生长。

8. 发明申请

US20100019257A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20100019257A1
公开(公告)日：2010-01-28
申请号：US11815759
申请日：2006-02-07
申请人： Mitsuhiko Sakai , Atsushi Yamaguchi , Ken Nakahara , Masayuki Sonobe , Tsuyoshi Tsutsui
发明人： Mitsuhiko Sakai , Atsushi Yamaguchi , Ken Nakahara , Masayuki Sonobe , Tsuyoshi Tsutsui
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/0079 , H01L33/60
摘要： There are provided a nitride semiconductor light emitting device having a structure enabling enhanced external quantum efficiency by effectively taking out light which is apt to repeat total reflection within a semiconductor lamination portion and a substrate and attenuate, and a method for manufacturing the same. A semiconductor lamination portion (6) including a first conductivity type layer and a second conductivity type layer, made of nitride semiconductor, is provided on a surface of the substrate (1) made of, for example, sapphire or the like. A first electrode (for example, p-side electrode (8)) is provided electrically connected to the first conductivity type layer (for example, p-type layer (5)) on a surface side of the semiconductor lamination portion (6), and a second electrode (for example, n-side electrode (9)) is provided electrically connected to the second conductivity type layer (for example, n-type layer (3)). A part of the semiconductor lamination portion (6) is removed at a surrounding region of a chip of the semiconductor lamination portion (6) by etching so that column portions (6a) stand side by side by leaving the semiconductor lamination portion without etching, and the n-type layer (3) expose around the column portions (6a).
摘要翻译：提供了具有通过有效地取出在半导体层叠部分和衬底内易于重复全反射的光而衰减的能够提高外部量子效率的结构的氮化物半导体发光器件及其制造方法。在由例如蓝宝石等制成的基板（1）的表面上设置包括由氮化物半导体构成的第一导电型层和第二导电型层的半导体层叠部（6）。第一电极（例如，p侧电极（8））在半导体层叠部分（6）的表面侧电连接到第一导电类型层（例如，p型层（5）），并且第二电极（例如，n侧电极（9））被设置为电连接到第二导电类型层（例如，n型层（3））。通过蚀刻在半导体层叠部（6）的芯片的周围区域去除半导体层叠部（6）的一部分，使得柱部（6a）不经蚀刻而离开半导体层叠部而并排放置，并且 n型层（3）围绕柱部（6a）露出。

9. 发明授权

US10839829B1 Magnetic head with a main pole including first and second layers and manufacturing method for the same 有权
公开(公告)号：US10839829B1
公开(公告)日：2020-11-17
申请号：US16585640
申请日：2019-09-27
申请人： Yoshitaka Sasaki , Hiroyuki Ito , Kazuki Sato , Shigeki Tanemura , Tetsuya Roppongi , Kei Hirata , Atsushi Yamaguchi , Michitaka Nishiyama
发明人： Yoshitaka Sasaki , Hiroyuki Ito , Kazuki Sato , Shigeki Tanemura , Tetsuya Roppongi , Kei Hirata , Atsushi Yamaguchi , Michitaka Nishiyama
IPC分类号： G11B5/127 , G11B5/31 , G11B5/66 , G11B5/39 , G11B5/265
CPC分类号： G11B5/3123 , G11B5/1278 , G11B5/265 , G11B5/3912 , G11B5/66
摘要： A magnetic head includes a medium facing surface, a coil, a main pole, and a substrate. The main pole includes a first layer, and a second layer lying on the first layer. The first layer includes a thickness-changing portion whose dimension in a direction perpendicular to a top surface of the substrate decreases with decreasing distance to the medium facing surface. At least part of the second layer is located on the thickness-changing portion.

10. 发明授权

US08929761B2 Image forming method and apparatus having induction heat fixing device with temperature sensing of switching element 有权
标题翻译：具有感应热定影装置的图像形成方法和装置，具有开关元件的温度感测
公开(公告)号：US08929761B2
公开(公告)日：2015-01-06
申请号：US13448667
申请日：2012-04-17
申请人： Hitoshi Wakide , Atsushi Yamaguchi
发明人： Hitoshi Wakide , Atsushi Yamaguchi
IPC分类号： G03G15/20 , H05B6/06
CPC分类号： G03G15/205 , G03G2215/00721
摘要： An image forming apparatus uses a switching element to switch current flowing to an excitation coil, so that a heating layer in a fixing member produces heat that fixes an image to a transported sheet. Based on a change in temperature of the switching element over time, a prediction unit determines, at a predetermined first time point, a predicted temperature of the switching element at a second time point at which a tip of the sheet is scheduled to arrive at the fixing member. When the predicted temperature is at least a predetermined value, a control unit controls power supplied to the excitation coil by restricting switching of the switching element and lifting the restriction, so that by the second time point the detected temperature of the fixing member reaches a temperature necessary for fixing.
摘要翻译：图像形成装置使用开关元件来切换流向励磁线圈的电流，使得固定构件中的加热层产生将图像固定到传送的片材上的热量。基于开关元件的温度随时间的变化，预测单元在预定的第一时间点确定在片材的末端到达第二时间点的开关元件的预测温度固定件。当预测温度至少为预定值时，控制单元通过限制开关元件的切换和提升限制来控制提供给励磁线圈的电力，使得在第二时间点，固定构件的检测温度达到温度固定必要

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