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1. 发明授权

US07982355B2 Interphase insulating member and rotating electric machine 有权
标题翻译：相间绝缘件和旋转电机
公开(公告)号：US07982355B2
公开(公告)日：2011-07-19
申请号：US12282773
申请日：2007-03-14
申请人： Keiji Takizawa , Masakazu Katoh , Jun Fujiki , Akihiro Oohashi , Masanori Imai , Yoshiki Takahashi , Yasuo Kashiwagi , Yoshihide Kitagawa
发明人： Keiji Takizawa , Masakazu Katoh , Jun Fujiki , Akihiro Oohashi , Masanori Imai , Yoshiki Takahashi , Yasuo Kashiwagi , Yoshihide Kitagawa
IPC分类号： H02K3/34 , H02K15/10
CPC分类号： H02K3/38
摘要： An interphase insulating member allowing reduction in size of a rotating electric machine is provided. The interphase insulating member includes a flat portion interposed between and insulating neighboring two phases of coil ends, and a three-dimensional portion protruding from the flat portion and guiding the coil. On a surface of the flat portion, epoxy resin layer is provided as a reinforcing member.
摘要翻译：提供了允许旋转电机的尺寸减小的相间绝缘构件。相间绝缘构件包括插入在绝缘的相邻两相线圈端部之间的平坦部分和从平坦部分突出并引导线圈的三维部分。在平坦部分的表面上设置环氧树脂层作为增强部件。

2. 发明申请

US20090189476A1 INTERPHASE INSULATING MEMBER AND ROTATING ELECTRIC MACHINE 有权
标题翻译：相间绝缘部件和旋转电机
公开(公告)号：US20090189476A1
公开(公告)日：2009-07-30
申请号：US12282773
申请日：2007-03-14
申请人： Keiji Takizawa , Masakazu Katoh , Jun Fujiki , Akihiro Oohashi , Masanori Imai , Yoshiki Takahashi , Yasuo Kashiwagi , Yoshihide Kitagawa
发明人： Keiji Takizawa , Masakazu Katoh , Jun Fujiki , Akihiro Oohashi , Masanori Imai , Yoshiki Takahashi , Yasuo Kashiwagi , Yoshihide Kitagawa
IPC分类号： H02K3/34
CPC分类号： H02K3/38
摘要： An interphase insulating member allowing reduction in size of a rotating electric machine is provide. The interphase insulating member includes a flat portion interposed between and insulating neighboring two phases of coil ends, and a three-dimensional portion protruding from the flat portion and guiding the coil. On a surface of the flat portion, epoxy resin layer is provided as a reinforcing member.
摘要翻译：提供允许旋转电机尺寸减小的相间绝缘构件。相间绝缘构件包括插入在绝缘的相邻两相线圈端部之间的平坦部分和从平坦部分突出并引导线圈的三维部分。在平坦部分的表面上设置环氧树脂层作为增强部件。

3. 发明授权

US09211472B2 Game device, game control method, and game control program configured to control a game in which a character is moved along a shadow 有权
标题翻译：游戏装置，游戏控制方法和游戏控制程序，被配置为控制字符沿着阴影移动的游戏
公开(公告)号：US09211472B2
公开(公告)日：2015-12-15
申请号：US13394603
申请日：2011-02-07
申请人： Ken Suzuta , Tatsuya Suzuki , Jun Fujiki , Takanori Kikuchi
发明人： Ken Suzuta , Tatsuya Suzuki , Jun Fujiki , Takanori Kikuchi
IPC分类号： A63F13/06 , A63F13/20 , A63F13/219 , A63F13/40 , G06T15/50 , G06T15/60 , G06T19/00
CPC分类号： A63F13/20 , A63F13/04 , A63F13/10 , A63F13/213 , A63F13/42 , A63F13/52 , A63F2300/1087 , A63F2300/609 , A63F2300/6607 , A63F2300/6646 , G06T15/50 , G06T15/60 , G06T19/00
摘要： A game device includes a light control unit configured to change, in a game field in which an object is located, a position of a light source or a direction of radiation by light emitted from the light source based on a control command of a player, a shadow rendering unit configured to render a shadow of the object projected by light emitted from the light source onto a plane of projection defined in the game field; and a character control unit configured to move a character along the shadow of the object.
摘要翻译：游戏装置包括：光控制单元，其被配置为基于玩家的控制命令在物体所在的游戏场中改变光源的位置或者从光源发出的光的射出方向，阴影渲染单元，被配置为将从光源发射的光投射的物体的阴影渲染到游戏场中定义的投影平面上; 以及字符控制单元，被配置为沿着对象的阴影移动字符。

4. 发明申请

US20140264141A1 INSULATING FILM 审中-公开
标题翻译：绝缘膜
公开(公告)号：US20140264141A1
公开(公告)日：2014-09-18
申请号：US14239727
申请日：2012-06-29
申请人： Shunsuke Masaki , Toshimasa Nishimori , Hiroyuki Fujita , Kazunori Hayashi , Jun Fujiki
发明人： Shunsuke Masaki , Toshimasa Nishimori , Hiroyuki Fujita , Kazunori Hayashi , Jun Fujiki
IPC分类号： H01B3/30
CPC分类号： H01B3/305 , C08G73/14 , C08J5/18 , C08J2379/08 , C08K3/22 , C08K3/346 , C08K3/36 , C08K2003/2227 , C08K2003/2237 , C08K2003/2241 , C08K2201/003 , C08L79/08
摘要： Provided is an insulating film which can be produced easily at low cost and which is excellent in discharge deterioration resistance and mechanical characteristics. The insulating film includes a polyamide imide resin having a weight average molecular weight of 35,000 to 75,000 and an insulating fine particle having an average primary particle diameter of 200 nm or less.
摘要翻译：提供了能够以低成本容易地制造并且耐放电劣化性和机械特性优异的绝缘膜。绝缘膜包括重均分子量为35,000〜75,000的聚酰胺酰亚胺树脂和平均一次粒径为200nm以下的绝缘性微粒。

5. 发明授权

US08251817B2 Game device, game control method, and game control program 有权
标题翻译：游戏装置，游戏控制方法和游戏控制程序
公开(公告)号：US08251817B2
公开(公告)日：2012-08-28
申请号：US12601535
申请日：2008-11-14
申请人： Tatsuya Suzuki , Jun Fujiki , Takanori Kikuchi
发明人： Tatsuya Suzuki , Jun Fujiki , Takanori Kikuchi
IPC分类号： G06F17/00
CPC分类号： A63F13/525 , A63F13/10 , A63F13/422 , A63F13/60 , A63F2300/308 , A63F2300/6018 , A63F2300/6054 , A63F2300/6676 , A63F2300/8094
摘要： A game device includes a shape data storage which stores data of an object disposed in a three-dimensional space, a first rendering unit which sets a point of view and a line of sight and renders the object, a viewpoint changing unit which receives a change instruction indicating a change of the point of view or line of sight and changes the point of view or line of sight, and a character controller which moves a character along the outer surface of the object. The character controller allows the character to move between two-dimensional planes of objects rendered in such a manner that the objects are adjacent to each other in the two-dimensional planes generated by the first rendering unit, and the game device further includes a search unit which searches a set of objects lying within a predetermined range of distance in the two-dimensional plane, and changes the point of view or line of sight so that the searched objects can be rendered adjacently to each other in the two-dimensional plane.
摘要翻译：一种游戏装置，包括存储设置在三维空间中的物体的数据的形状数据存储器，设置观察点和视线并呈现物体的第一渲染单元，接收变化的视点改变单元指示视点或视线的变化并改变视点或视线的指令，以及沿对象的外表面移动字符的字符控制器。字符控制器允许角色在由第一渲染单元生成的二维平面中的对象彼此相邻的方式呈现的对象的二维平面之间移动，并且游戏装置还包括搜索单元其搜索位于二维平面内的预定距离范围内的一组对象，并且改变视点或视线，使得可以在二维平面中彼此相邻地进行搜索到的对象。

6. 发明授权

US08058681B2 Nonvolatile semiconductor memory element, nonvolatile semiconductor memory, and method for operating nonvolatile semiconductor memory element 有权
标题翻译：非易失性半导体存储元件，非易失性半导体存储器以及用于操作非易失性半导体存储元件
公开(公告)号：US08058681B2
公开(公告)日：2011-11-15
申请号：US12405626
申请日：2009-03-17
申请人： Masao Shingu , Jun Fujiki , Naoki Yasuda , Koichi Muraoka
发明人： Masao Shingu , Jun Fujiki , Naoki Yasuda , Koichi Muraoka
IPC分类号： H01L29/792
CPC分类号： H01L29/7883 , G11C11/40 , G11C16/0408 , G11C16/0466 , G11C16/10 , G11C16/12 , G11C16/14 , G11C16/26 , H01L21/28282 , H01L27/11521 , H01L27/11556 , H01L27/11582 , H01L29/4234 , H01L29/495 , H01L29/4966 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/788 , H01L29/792
摘要： According to an aspect of the present invention, there is provided a nonvolatile semiconductor memory element including: a semiconductor substrate including: a source region; a drain region; and a channel region; a lower insulating film that is formed on the channel region; a charge storage film that is formed on the lower insulating film and that stores data; an upper insulating film that is formed on the charge storage film; and a control gate that is formed on the upper insulating film, wherein the upper insulating film includes: a first insulting film; and a second insulating film that is laminated with the first insulating film, and wherein the first insulating film is formed to have a trap level density larger than that of the second insulating film.
摘要翻译：根据本发明的一个方面，提供了一种非易失性半导体存储元件，包括：半导体衬底，包括：源极区; 漏区; 和通道区域; 形成在沟道区上的下绝缘膜; 电荷存储膜，形成在下绝缘膜上并存储数据; 形成在电荷存储膜上的上绝缘膜; 以及形成在所述上绝缘膜上的控制栅极，其中所述上绝缘膜包括：第一绝缘膜; 以及与所述第一绝缘膜层压的第二绝缘膜，并且其中所述第一绝缘膜形成为具有比所述第二绝缘膜的陷阱级密度大的陷阱级密度。

7. 发明授权

US07943981B2 Semiconductor memory element 有权
标题翻译：半导体存储元件
公开(公告)号：US07943981B2
公开(公告)日：2011-05-17
申请号：US12233073
申请日：2008-09-18
申请人： Tsunehiro Ino , Naoki Yasuda , Koichi Muraoka , Jun Fujiki , Shoko Kikuchi , Keiko Ariyoshi
发明人： Tsunehiro Ino , Naoki Yasuda , Koichi Muraoka , Jun Fujiki , Shoko Kikuchi , Keiko Ariyoshi
IPC分类号： H01L29/788
CPC分类号： H01L29/792 , H01L29/42348 , H01L29/513 , H01L29/518
摘要： A semiconductor memory element includes: a tunnel insulating film formed on a semiconductor substrate; a HfON charge storage film with Bevan clusters formed on the tunnel insulating film; a blocking film formed on the HfON charge storage film; and a gate electrode formed on the blocking film.
摘要翻译：半导体存储元件包括：形成在半导体衬底上的隧道绝缘膜; 在隧道绝缘膜上形成具有Bevan簇的HfON电荷存储膜; 形成在HfON电荷存储膜上的阻挡膜; 以及形成在阻挡膜上的栅电极。

8. 发明授权

US07688076B2 Insulation inspection apparatus 失效
标题翻译：绝缘检查装置
公开(公告)号：US07688076B2
公开(公告)日：2010-03-30
申请号：US11885053
申请日：2006-03-01
申请人： Hiroshi Aihara , Jun Fujiki , Susumu Kiyohara
发明人： Hiroshi Aihara , Jun Fujiki , Susumu Kiyohara
IPC分类号： G01R31/06 , G01R31/12
CPC分类号： G01R31/346
摘要： An insulation inspection apparatus includes a chamber in which a stator with a winding can be stored, an electrode movable along the outer circumference of a coil end of the stator winding, a voltage application unit applying voltage between the coil end and electrode, a sensor unit sensing leakage current and/or voltage drop between the coil end and electrode, and a pressure reduction unit reducing the pressure in the chamber.
摘要翻译：一种绝缘检查装置，包括可以存储具有绕组的定子的室，可沿定子绕组的线圈端的外周移动的电极，在线圈端和电极之间施加电压的电压施加单元，传感器单元感测线圈端和电极之间的泄漏电流和/或电压降，以及降低腔室中的压力的减压单元。

9. 发明授权

US08451659B2 Method for driving a nonvolatile semiconductor memory device 失效
标题翻译：用于驱动非易失性半导体存储器件的方法
公开(公告)号：US08451659B2
公开(公告)日：2013-05-28
申请号：US13094534
申请日：2011-04-26
申请人： Jun Fujiki
发明人： Jun Fujiki
IPC分类号： G11C16/10
CPC分类号： G11C16/10 , G11C11/5671 , G11C16/0466 , G11C16/0483
摘要： A method for driving a nonvolatile semiconductor memory device is provided. The nonvolatile semiconductor memory device has source/drain diffusion layers spaced from each other in a surface portion of a semiconductor substrate, a laminated insulating film formed on a channel between the source/drain diffusion layers and including a charge storage layer, and a gate electrode formed on the laminated insulating film, the nonvolatile semiconductor memory device changing its data memory state by injection of charges into the charge storage layer. The method includes, before injecting charges to change the data memory state into the charge storage layer: injecting charges having a polarity identical to that of the charges to be injected; and further injecting charges having a polarity opposite to that of the injected charges.
摘要翻译：提供一种用于驱动非易失性半导体存储器件的方法。非易失性半导体存储器件在半导体衬底的表面部分中具有彼此间隔开的源极/漏极扩散层，形成在源极/漏极扩散层之间并且包括电荷存储层的沟道上的层叠绝缘膜，以及栅电极形成在层叠绝缘膜上的非易失性半导体存储器件通过将电荷注入电荷存储层来改变其数据存储状态。该方法包括：在注入电荷以将数据存储状态改变为电荷存储层之前，注入具有与要注入的电荷相同极性的电荷; 并且进一步注入与注入的电荷的极性相反极性的电荷。

10. 发明申请

US20120205735A1 NONVOLATILE SEMICONDUCTOR STORAGE DEVICE 失效
标题翻译：非易失性半导体存储器件
公开(公告)号：US20120205735A1
公开(公告)日：2012-08-16
申请号：US13404073
申请日：2012-02-24
申请人： Naoki YASUDA , Jun Fujiki
发明人： Naoki YASUDA , Jun Fujiki
IPC分类号： H01L27/115
CPC分类号： H01L21/28282 , H01L27/1157 , H01L29/66833 , H01L29/792
摘要： In one embodiment, there is provided a nonvolatile semiconductor storage device. The device includes: a plurality of nonvolatile memory cells. Each of the nonvolatile memory cells includes: a first semiconductor layer including a first source region, a first drain region, and a first channel region; a block insulating film formed on the first channel region; a charge storage layer formed on the block insulating film; a tunnel insulating film formed on the charge storage layer; a second semiconductor layer formed on the tunnel insulating film and including a second source region, a second drain region, and a second channel region. The second channel region is formed on the tunnel insulating film such that the tunnel insulating film is located between the second source region and the second drain region. A dopant impurity concentration of the first channel region is higher than that of the second channel region.
摘要翻译：在一个实施例中，提供了一种非易失性半导体存储装置。该装置包括：多个非易失性存储单元。每个非易失性存储单元包括：第一半导体层，包括第一源极区，第一漏极区和第一沟道区; 形成在所述第一沟道区上的块绝缘膜; 形成在所述块绝缘膜上的电荷存储层; 形成在电荷存储层上的隧道绝缘膜; 形成在所述隧道绝缘膜上并且包括第二源极区域，第二漏极区域和第二沟道区域的第二半导体层。第二沟道区形成在隧道绝缘膜上，使得隧道绝缘膜位于第二源区和第二漏区之间。第一沟道区的掺杂剂杂质浓度高于第二沟道区的掺杂剂杂质浓度。

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