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1. 发明授权

US5969413A Semiconductor device having a tab chip on a tape carrier with lead wirings provided on the tape carrier used as external leads 失效
标题翻译：半导体器件具有在载带上具有引线布线的片状芯片，该导线布置在用作外部引线的载带上
公开(公告)号：US5969413A
公开(公告)日：1999-10-19
申请号：US855931
申请日：1997-05-14
申请人： Keiichi Yano , Kazuo Kimura , Hironori Asai , Jun Monma , Koji Yamakawa , Mitsuyoshi Endo , Hirohisa Osoguchi
发明人： Keiichi Yano , Kazuo Kimura , Hironori Asai , Jun Monma , Koji Yamakawa , Mitsuyoshi Endo , Hirohisa Osoguchi
IPC分类号： H01L23/10 , H01L23/15 , H01L23/28 , H01L23/495 , H01L23/02 , H01L23/12 , H01L23/48
CPC分类号： H01L23/10 , H01L23/15 , H01L23/49572 , H01L24/50 , H01L2924/01013 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01082 , H01L2924/07802 , H01L2924/30107
摘要： A semiconductor chip is supported on a tape carrier provided with lead wirings. The semiconductor chip is electrically connected to the lead wirings. The semiconductor chip of this quality is bonded in combination with the pe carrier to an aluminum nitride substrate. The lead wirings provided on the carrier combine the two functions as an internal lead and an external lead. The semiconductor package of such a structure as is described above allows multi-terminal connection by the narrowing of pitches between the leads and permits provision of a miniature package excelling in the heat-radiating property. Alternatively, the lead wirings supported on the tape carrier and electrically connected to the semiconductor chip are utilized as internal leads. For the external leads, such lead frames as are bonded to the aluminum nitride substrate are used. The lead frames are electrically connected to the internal leads provided in the tape carrier.
摘要翻译：半导体芯片被支撑在带有引线配线的带载体上。半导体芯片电连接到引线配线。该质量的半导体芯片与pe载体结合到氮化铝衬底上。载体上提供的导线结合了作为内部引线和外部引线的两个功能。如上所述的这种结构的半导体封装允许通过引线之间的间距变窄来实现多端子连接，并且允许提供具有优异的散热性能的微型封装。或者，支撑在带载体上并电连接到半导体芯片的引线配线被用作内部引线。对于外部引线，使用与氮化铝基板结合的引线框架。引线框架电连接到设置在带式载体中的内部引线。

2. 发明授权

US5703397A Semiconductor package having an aluminum nitride substrate 失效
标题翻译：具有氮化铝衬底的半导体封装
公开(公告)号：US5703397A
公开(公告)日：1997-12-30
申请号：US745367
申请日：1996-11-08
申请人： Mitsuyoshi Endo , Hironori Asai , Keiichi Yano , Yoshitoshi Sato
发明人： Mitsuyoshi Endo , Hironori Asai , Keiichi Yano , Yoshitoshi Sato
IPC分类号： H01L23/10 , H01L23/13 , H01L23/15 , H01L23/367 , H01L23/373 , H01L23/498 , H01L23/053 , H01L23/12
CPC分类号： H01L23/13 , H01L23/10 , H01L23/15 , H01L23/3675 , H01L23/3731 , H01L23/49822 , H01L23/49838 , H01L2224/48227 , H01L24/48 , H01L2924/00014 , H01L2924/01078 , H01L2924/01079 , H01L2924/15153 , H01L2924/1517 , H01L2924/15174 , H01L2924/15312 , H01L2924/16152 , H01L2924/16195 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025
摘要： A semiconductor ceramic multilayer package comprising an aluminum nitride substrate having a semiconductor element mounted on one surface thereof and a wiring pattern electrically connected to the semiconductor element, connecting terminals connected to the wiring pattern and disposed on the other surface of the aluminum nitride substrate, and a sealing member connected to the aluminum nitride substrate with a metallic bonding layer or a glass layer having a thickness of not more than 100 .mu.m in such a manner as to seal the semiconductor element possesses a notably improved heat-radiating property and accomplishes the object of increasing the number of pins and reducing the size of package.
摘要翻译：一种半导体陶瓷多层封装，包括具有安装在其一个表面上的半导体元件的氮化铝衬底和与半导体元件电连接的布线图案，连接到布线图案并且设置在氮化铝衬底的另一表面上的连接端子，以及用氮化铝衬底与金属接合层或厚度不大于100μm的玻璃层以密封半导体元件的方式连接的密封构件具有显着提高的散热性能并实现该物体增加引脚数量并减小封装尺寸。

3. 发明授权

US4770953A Aluminum nitride sintered body having conductive metallized layer 失效
标题翻译：具有导电金属化层的氮化铝烧结体
公开(公告)号：US4770953A
公开(公告)日：1988-09-13
申请号：US16557
申请日：1987-02-19
申请人： Akihiro Horiguchi , Mituo Kasori , Fumio Ueno , Hideki Sato , Nobuyuki Mizunoya , Mitsuyoshi Endo , Shun-ichiro Tanaka , Kazuo Shinozaki
发明人： Akihiro Horiguchi , Mituo Kasori , Fumio Ueno , Hideki Sato , Nobuyuki Mizunoya , Mitsuyoshi Endo , Shun-ichiro Tanaka , Kazuo Shinozaki
IPC分类号： C04B41/50 , C04B41/51 , C04B41/87 , C04B41/88 , H01L21/48 , H01L23/15 , H01L23/498 , H05K1/09 , B32B9/00 , C04B35/58
CPC分类号： C04B41/87 , C04B41/5053 , C04B41/51 , C04B41/5133 , C04B41/88 , H01L21/4846 , H01L23/15 , H01L23/49866 , H01L2924/0002 , H05K1/092 , Y10S428/901 , Y10T428/24917 , Y10T428/24926
摘要： For higher thermal conductivity, stronger adhesion strength, excellent insulating characteristics, and multilayer interconnection, an aluminium sintered body for circuit substrates comprises a novel conductive metallized layer on the surface of the sintered body. The metallized layer comprises at least one element selected from the first group of Mo, W and Ta and at least one element selected from the second group of IIa, III, IVa group elements, lanthanide elements, and actinide elements in the periodic table, as the conductive phase element. The first group element serves to improve the heat conductivity and resistance, while the second group serves to increase the wetness and adhesion strength between the insulating body and the metallized layer. Further, the plural insulating ceramic bodies and the plural metallized conductive layers can be sintered simultaneously being stacked one above the other to permit a multilayer interconnection.
摘要翻译：为了更高的导热性，更强的粘合强度，优异的绝缘特性和多层互连，用于电路基板的铝烧结体包括在烧结体表面上的新的导电金属化层。金属化层包括选自Mo，W和Ta的第一组中的至少一种元素和选自元素周期表中第二组IIa，III，IVa族元素，镧系元素和锕系元素中的至少一种元素，如导电相元件。第一组元件用于提高导热性和电阻，而第二组用于增加绝缘体和金属化层之间的湿度和粘合强度。此外，多个绝缘陶瓷体和多个金属化导电层可以同时被烧结而彼此层叠以允许多层互连。

4. 发明授权

US08766407B2 Semiconductor wafer and laminate structure including the same 有权
标题翻译：半导体晶片和包括其的层压结构
公开(公告)号：US08766407B2
公开(公告)日：2014-07-01
申请号：US13365516
申请日：2012-02-03
申请人： Mitsuyoshi Endo
发明人： Mitsuyoshi Endo
IPC分类号： H01L29/06
CPC分类号： H01L24/05 , H01L21/76256 , H01L24/08 , H01L2224/05556 , H01L2224/05559 , H01L2224/05573 , H01L2224/05576 , H01L2224/056 , H01L2224/05686 , H01L2224/08145 , H01L2224/8385 , H01L2224/83895 , H01L2224/83896 , H01L2224/94 , H01L2224/83 , H01L2924/00014 , H01L2924/053 , H01L2924/05442 , H01L2924/049 , H01L2924/05042
摘要： According to one embodiment, a semiconductor wafer includes a semiconductor substrate and an interconnect layer formed on the semiconductor substrate. In the semiconductor wafer, the semiconductor substrate includes a first region that is located on the outer periphery side of the semiconductor substrate and that is not covered with the interconnect layer. The interconnect layer includes a second region where the upper surface of the interconnect layer is substantially flat. A first insulating film is formed in the first region. The upper surface of the interconnect layer within the second region and the upper surface of the first insulating film substantially flush with each other.
摘要翻译：根据一个实施例，半导体晶片包括形成在半导体衬底上的半导体衬底和互连层。在半导体晶片中，半导体衬底包括位于半导体衬底的外周侧并且不被互连层覆盖的第一区域。互连层包括互连层的上表面基本上平坦的第二区域。在第一区域形成第一绝缘膜。第二区域内的互连层的上表面和第一绝缘膜的上表面基本上彼此齐平。

5. 发明申请

US20120248624A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120248624A1
公开(公告)日：2012-10-04
申请号：US13308826
申请日：2011-12-01
申请人： Mitsuyoshi Endo
发明人： Mitsuyoshi Endo
IPC分类号： H01L23/48 , H01L21/302
CPC分类号： H01L25/0657 , H01L21/6836 , H01L21/76898 , H01L22/22 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/16 , H01L24/24 , H01L24/82 , H01L24/83 , H01L24/92 , H01L25/50 , H01L2221/68372 , H01L2224/03002 , H01L2224/0401 , H01L2224/0557 , H01L2224/05571 , H01L2224/05647 , H01L2224/13025 , H01L2224/16145 , H01L2224/16146 , H01L2224/24146 , H01L2224/32145 , H01L2224/82005 , H01L2224/82031 , H01L2224/83005 , H01L2224/9202 , H01L2224/92132 , H01L2224/94 , H01L2225/06513 , H01L2225/06544 , H01L2924/00014 , H01L2924/12042 , H01L2224/80 , H01L2224/03 , H01L2224/83 , H01L2924/00012 , H01L2224/05552 , H01L2924/00
摘要： According to one embodiment, a first back surface of a first substrate and a second front surface of a second substrate are jointed together so as to connect a first conductor with a second conductor. The first conductor includes a portion having a diameter equal to that of a first gap formed above a first metal layer in a range between the first metal layer and a first front surface, and a portion having a diameter greater than that of the first gap and smaller than an outer diameter of the first metal layer in a range between the first metal layer and the first back surface. A first insulating layer has a gap formed above the first metal layer, the gap being greater than the first gap and smaller than the outer diameter of the first metal layer.
摘要翻译：根据一个实施例，将第一基板的第一后表面和第二基板的第二前表面接合在一起，以将第一导体与第二导体连接。第一导体包括直径等于在第一金属层和第一前表面之间的范围内形成在第一金属层之上的第一间隙的直径的部分和具有大于第一间隙的直径的部分，在第一金属层和第一背面之间的范围内小于第一金属层的外径。第一绝缘层具有形成在第一金属层上方的间隙，该间隙大于第一间隙并小于第一金属层的外径。

6. 发明申请

US20110007448A1 VARIABLE CAPACITY ELEMENT 有权
标题翻译：可变能力元素
公开(公告)号：US20110007448A1
公开(公告)日：2011-01-13
申请号：US12714773
申请日：2010-03-01
申请人： Mitsuyoshi Endo
发明人： Mitsuyoshi Endo
IPC分类号： H01G5/16
CPC分类号： H01G5/16
摘要： A variable capacity element has a substrate, a pair of capacitor electrodes, a pair of driver electrodes, and a pair of capacitor wirings why one of the capacitor electrodes is movable by applying a voltage between the driver electrodes. A pair of driver electrodes are connected to the pair of capacitor electrodes, being insulated from the capacitor electrodes. A pair of capacitor wiring extend in parallel each other from connecting portions with the pairs of the capacitor electrodes, being electrically connected with the capacitor electrodes.
摘要翻译：可变容量元件具有基板，一对电容器电极，一对驱动电极和一对电容器布线，为什么通过在驱动电极之间施加电压可以使电容器电极之一移动。一对驱动电极连接到一对电容器电极，与电容器电极绝缘。一对电容器配线从与电容器电极对的连接部分平行地延伸，与电容器电极电连接。

7. 发明授权

US08884396B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08884396B2
公开(公告)日：2014-11-11
申请号：US13238705
申请日：2011-09-21
申请人： Mitsuyoshi Endo
发明人： Mitsuyoshi Endo
IPC分类号： H01L23/52 , H01L21/768 , H01L25/065 , H01L21/683 , H01L21/66 , H01L25/00 , H01L23/00
CPC分类号： H01L25/0657 , H01L21/6836 , H01L21/76898 , H01L22/22 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/16 , H01L24/24 , H01L24/82 , H01L24/83 , H01L24/92 , H01L25/50 , H01L2221/68372 , H01L2224/03002 , H01L2224/0401 , H01L2224/0557 , H01L2224/05571 , H01L2224/05647 , H01L2224/13025 , H01L2224/16145 , H01L2224/16146 , H01L2224/24146 , H01L2224/32145 , H01L2224/82005 , H01L2224/82031 , H01L2224/83005 , H01L2224/9202 , H01L2224/92132 , H01L2224/94 , H01L2225/06513 , H01L2225/06544 , H01L2924/00014 , H01L2924/12042 , H01L2224/80 , H01L2224/03 , H01L2224/83 , H01L2924/00012 , H01L2224/05552 , H01L2924/00
摘要： According to one embodiment, a first back surface of a first substrate and a second front surface of a second substrate are jointed together so as to connect a first conductor with a second conductor. The first conductor includes a portion having a diameter equal to that of a first gap formed above a first metal layer in a range between the first metal layer and a first front surface, and a portion having a diameter greater than that of the first gap and smaller than an outer diameter of the first metal layer in a range between the first metal layer and the first back surface. A first insulating layer has a gap formed above the first metal layer, the gap being greater than the first gap and smaller than the outer diameter of the first metal layer.
摘要翻译：根据一个实施例，将第一基板的第一后表面和第二基板的第二前表面接合在一起，以将第一导体与第二导体连接。第一导体包括直径等于在第一金属层和第一前表面之间的范围内形成在第一金属层之上的第一间隙的直径的部分和具有大于第一间隙的直径的部分，在第一金属层和第一背面之间的范围内小于第一金属层的外径。第一绝缘层具有形成在第一金属层上方的间隙，该间隙大于第一间隙并小于第一金属层的外径。

8. 发明授权

US08427808B2 Variable capacity element 有权
标题翻译：可变容量元素
公开(公告)号：US08427808B2
公开(公告)日：2013-04-23
申请号：US12714773
申请日：2010-03-01
申请人： Mitsuyoshi Endo
发明人： Mitsuyoshi Endo
IPC分类号： H01G5/00 , H01G7/00
CPC分类号： H01G5/16
摘要： A variable capacity element has a substrate, a pair of capacitor electrodes, a pair of driver electrodes, and a pair of capacitor wirings why one of the capacitor electrodes is movable by applying a voltage between the driver electrodes. A pair of driver electrodes are connected to the pair of capacitor electrodes, being insulated from the capacitor electrodes. A pair of capacitor wiring extend in parallel each other from connecting portions with the pairs of the capacitor electrodes, being electrically connected with the capacitor electrodes.
摘要翻译：可变容量元件具有基板，一对电容器电极，一对驱动电极和一对电容器布线，为什么通过在驱动电极之间施加电压可以使电容器电极之一移动。一对驱动电极连接到一对电容器电极，与电容器电极绝缘。一对电容器配线从与电容器电极对的连接部分平行地延伸，与电容器电极电连接。

9. 发明申请

US20080231518A1 Antenna device and radio communication device 有权
标题翻译：天线设备和无线电通信设备
公开(公告)号：US20080231518A1
公开(公告)日：2008-09-25
申请号：US12004480
申请日：2007-12-21
申请人： Yukako Tsutsumi , Mitsuyoshi Endo , Mitsuhiro Nakao
发明人： Yukako Tsutsumi , Mitsuyoshi Endo , Mitsuhiro Nakao
IPC分类号： H01Q1/38
CPC分类号： H01Q1/38 , H01L23/66 , H01L24/06 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2223/6611 , H01L2223/6677 , H01L2224/05553 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/48624 , H01L2224/48644 , H01L2224/48647 , H01L2224/48724 , H01L2224/48747 , H01L2224/48844 , H01L2224/48847 , H01L2224/49111 , H01L2224/49113 , H01L2224/49171 , H01L2224/85424 , H01L2224/85444 , H01L2224/85447 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01029 , H01L2924/01031 , H01L2924/01032 , H01L2924/01033 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/09701 , H01L2924/10253 , H01L2924/10271 , H01L2924/10329 , H01L2924/15311 , H01L2924/15787 , H01L2924/181 , H01L2924/3011 , H01L2924/30111 , H01L2924/00014 , H01L2924/00 , H01L2224/48824 , H01L2224/48744 , H01L2924/00012
摘要： First and second wires are formed so that the further away from a semiconductor chip, the greater the distance between the first and second wires. This prevents currents flowing through the first and second wires from cancelling out each other, and further enables a metallic plate to be disposed as far away from the semiconductor chip as possible. In addition, configuring the metallic plate to have a constant width that is wider than the diameters of the first and second wires results in a wide connection range, thereby ensuring connection even when mounting misalignments occur between the wires and the metallic plate.
摘要翻译：第一和第二导线形成为使得远离半导体芯片的距离越远，第一和第二导线之间的距离越大。这防止流过第一和第二线的电流相互抵消，并且还使金属板尽可能远离半导体芯片设置。此外，将金属板配置为具有比第一和第二配线的直径宽的恒定宽度，导致宽的连接范围，从而即使在电线和金属板之间发生安装不对准的情况下也可确保连接。

10. 发明授权

US07370412B2 Method for connecting electronic device 失效
标题翻译：电子设备连接方法
公开(公告)号：US07370412B2
公开(公告)日：2008-05-13
申请号：US10611895
申请日：2003-07-03
申请人： Toshiro Hiraoka , Mitsuyoshi Endo , Naoko Yamaguchi , Yasuyuki Hotta , Shigeru Matake , Hideo Aoki , Misa Sawanobori
发明人： Toshiro Hiraoka , Mitsuyoshi Endo , Naoko Yamaguchi , Yasuyuki Hotta , Shigeru Matake , Hideo Aoki , Misa Sawanobori
IPC分类号： H01K3/10
CPC分类号： H01L24/24 , H01L21/568 , H01L21/6835 , H01L23/5389 , H01L24/82 , H01L24/96 , H01L2221/68359 , H01L2221/68363 , H01L2224/0231 , H01L2224/0401 , H01L2224/12105 , H01L2224/2413 , H01L2224/24137 , H01L2224/24195 , H01L2224/76155 , H01L2224/7665 , H01L2224/82039 , H01L2224/82102 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/12042 , H01L2924/19105 , H01L2924/3025 , H01L2924/351 , H05K1/185 , H05K3/185 , H05K3/422 , H05K2201/0116 , Y10T29/4913 , Y10T29/49155 , Y10T29/49156 , Y10T29/49165 , Y10T29/4921 , H01L2924/00
摘要： An electronic device connecting method according to a first aspect of the present invention includes: mounting an electronic device having at least one electrode portion on a sheet-like porous member having a hole therein so that the electrode portion is close to the porous member; selectively irradiating a predetermined region of the porous member, on which the electronic device is mounted, with energy lines to form a latent image in an irradiated or non-irradiated portion of the porous member, the predetermined region including a portion close to the electrode portion; after irradiating with the energy lines, filling a conductive material in a hole of the latent image of the porous member to form a conductive portion; and bonding and integrating the porous member, in which the conductive portion is formed, to and with the electronic device.
摘要翻译：根据本发明的第一方面的电子设备连接方法包括：将具有至少一个电极部分的电子设备安装在其中具有孔的片状多孔构件上，使得电极部分靠近多孔构件; 用能量线选择性地照射安装有电子装置的多孔构件的预定区域，以在多孔构件的照射或未照射部分中形成潜像，该预定区域包括靠近电极部分的部分 ; 在照射能量线之后，在多孔构件的潜像的孔中填充导电材料以形成导电部分; 并且将形成有导电部分的多孔构件与电子装置接合并整合。

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