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    • 7. 发明授权
    • Semiconductor device and method of manufacturing the same
    • 半导体装置及其制造方法
    • US06297532B1
    • 2001-10-02
    • US08787332
    • 1997-01-27
    • Fumitoshi YamamotoTomohide Terashima
    • Fumitoshi YamamotoTomohide Terashima
    • H01L2978
    • H01L29/408H01L21/76801H01L21/76804H01L23/485H01L23/5329H01L2924/0002H01L2924/12044H01L2924/00
    • The present invention aims to provide a semiconductor device in which a satisfactory breakdown voltage can be obtained without increasing its chip size, and a method of manufacturing the same. A first electrode layer and a second electrode layer are formed. An inorganic type silicon oxide film is formed so as to cover first and second electrodes. An organic type silicon oxide film is formed on a surface of inorganic type silicon oxide film above a portion of a surface of first electrode layer. At a region of inorganic type silicon oxide film where organic type silicon oxide film is not formed, a through hole is formed, exposing a portion of a surface of second electrode layer. An interconnection layer is formed so as to be in contact with second electrode layer via through hole and opposing first electrode layer with inorganic and organic type silicon oxide films therebetween.
    • 本发明的目的在于提供一种在不增加芯片尺寸的情况下可获得令人满意的击穿电压的半导体器件及其制造方法。 形成第一电极层和第二电极层。 形成无机型氧化硅膜,以覆盖第一和第二电极。 在第一电极层的表面的一部分上方的无机型氧化硅膜的表面上形成有机型氧化硅膜。 在没有形成有机氧化硅膜的无机型氧化硅膜的区域,形成通孔,露出第二电极层的一部分表面。 形成互连层,以便经由通孔与第二电极层接触,并且在其间具有无机和有机型氧化硅膜的相对的第一电极层。
    • 10. 发明授权
    • Semiconductor device supplying charging current to element to be charged
    • 为要充电的元件提供充电电流的半导体器件
    • US08674471B2
    • 2014-03-18
    • US13596209
    • 2012-08-28
    • Tomohide Terashima
    • Tomohide Terashima
    • H01L21/70H01L21/762
    • H02J7/022H01L27/0629H01L27/0635H03K17/6871H03K17/6872H03K17/6874H03K19/017509Y02B40/90
    • A semiconductor device supplying a charging current to a charging-target element includes: a semiconductor layer of a first conductivity type; a first semiconductor region of a second conductivity type formed on a main surface of the semiconductor layer and having a first node coupled to a first electrode of the charging-target element and a second node coupled to a power supply potential node supplied with a power supply voltage; a second semiconductor region of the first conductivity type formed in a surface of the first semiconductor region at a distance from the semiconductor layer and having a third node coupled to the power supply potential node; and a charge carrier drift restriction portion restricting drift of charge carrier from the third node to the semiconductor layer.
    • 向充电目标元件提供充电电流的半导体器件包括:第一导电类型的半导体层; 第二导电类型的第一半导体区域形成在半导体层的主表面上并且具有耦合到充电目标元件的第一电极的第一节点和耦合到被提供有电源的电源电位节点的第二节点 电压; 第一导电类型的第二半导体区域形成在距离半导体层一定距离的第一半导体区域的表面中,并且具有耦合到电源电位节点的第三节点; 以及电荷载流子漂移限制部分,其限制载流子从第三节点到半导体层的漂移。