专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07781301B2 Method of fabricating semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07781301B2
公开(公告)日：2010-08-24
申请号：US12536631
申请日：2009-08-06
申请人： Kei Watanabe , Akifumi Gawase , Kenichi Otsuka
发明人： Kei Watanabe , Akifumi Gawase , Kenichi Otsuka
IPC分类号： H01L21/76
CPC分类号： H01L21/7682 , H01L21/76807 , H01L21/76832 , H01L21/76835
摘要： A method of fabricating a semiconductor device according to one embodiment includes: forming an interlayer sacrificial film and an insulating film located thereon above a semiconductor substrate having a semiconductor element, the interlayer sacrificial film having a wiring provided therein; etching the insulating film, or, etching the insulating film and the interlayer sacrificial film to form a trench reaching the interlayer sacrificial film; forming a gas permeable film in the trench; gasifying and removing the interlayer sacrificial film through the trench and the gas permeable film; and forming a sealing film on the gas permeable film for sealing the vicinity of an opening of the trench after removing the interlayer sacrificial film.
摘要翻译：根据一个实施例的制造半导体器件的方法包括：在具有半导体元件的半导体衬底之上形成层间牺牲膜和绝缘膜，所述层间牺牲膜具有设置在其中的布线; 蚀刻绝缘膜，或者蚀刻绝缘膜和层间牺牲膜以形成到达层间牺牲膜的沟槽; 在沟槽中形成透气膜; 通过沟槽和透气膜气化和去除层间牺牲膜; 在透气膜上形成密封膜，用于在除去层间牺牲膜之后密封沟槽的开口附近。

2. 发明申请

US20100055893A1 METHOD OF FABRICATING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20100055893A1
公开(公告)日：2010-03-04
申请号：US12536631
申请日：2009-08-06
申请人： Kei WATANABE , Akifumi Gawase , Kenichi Otsuka
发明人： Kei WATANABE , Akifumi Gawase , Kenichi Otsuka
IPC分类号： H01L21/3205
CPC分类号： H01L21/7682 , H01L21/76807 , H01L21/76832 , H01L21/76835
摘要： A method of fabricating a semiconductor device according to one embodiment includes: forming an interlayer sacrificial film and an insulating film located thereon above a semiconductor substrate having a semiconductor element, the interlayer sacrificial film having a wiring provided therein; etching the insulating film, or, etching the insulating film and the interlayer sacrificial film to form a trench reaching the interlayer sacrificial film; forming a gas permeable film in the trench; gasifying and removing the interlayer sacrificial film through the trench and the gas permeable film; and forming a sealing film on the gas permeable film for sealing the vicinity of an opening of the trench after removing the interlayer sacrificial film.
摘要翻译：根据一个实施例的制造半导体器件的方法包括：在具有半导体元件的半导体衬底之上形成层间牺牲膜和绝缘膜，所述层间牺牲膜具有设置在其中的布线; 蚀刻绝缘膜，或者蚀刻绝缘膜和层间牺牲膜以形成到达层间牺牲膜的沟槽; 在沟槽中形成透气膜; 通过沟槽和透气膜气化和去除层间牺牲膜; 在透气膜上形成密封膜，用于在除去层间牺牲膜之后密封沟槽的开口附近。

3. 发明授权

US07017507B2 Steering assembly for watercraft 有权
标题翻译：船舶转向总成
公开(公告)号：US07017507B2
公开(公告)日：2006-03-28
申请号：US10902733
申请日：2004-07-29
申请人： Toshiyuki Hattori , Kenichi Otsuka
发明人： Toshiyuki Hattori , Kenichi Otsuka
IPC分类号： B63H25/10
CPC分类号： B63H25/02 , B63B35/731 , B63H2025/024
摘要： A watercraft can include seats having hip supports for the riders including an operator and/or passengers thereof. Additionally, the watercraft can include a handlebar cover that is configured to prevent water from entering a steering mechanism. For example, the handlebar cover can include a lower portion and an upper portion extending downwardly over the lower portion.
摘要翻译：船舶可以包括具有臀部支撑的座椅，其包括操作者和/或其乘客。另外，船舶可以包括构造成防止水进入转向机构的把手盖。例如，把手盖可以包括下部和在下部向下延伸的上部。

4. 发明授权

US5496393A Gas purification capability measuring method for gas purification apparatus and gas purification apparatus 失效
标题翻译：气体净化装置和气体净化装置的气体净化能力测定方法
公开(公告)号：US5496393A
公开(公告)日：1996-03-05
申请号：US441114
申请日：1995-05-15
申请人： Kenichi Otsuka , Kazuya Mori
发明人： Kenichi Otsuka , Kazuya Mori
IPC分类号： B01D46/46 , B01D53/04 , B01D53/047
CPC分类号： B01D53/047 , B01D46/46 , B01D2256/18 , B01D2259/40003 , B01D2259/40009 , B01D2259/402 , B01D53/0446
摘要： A gas purification apparatus has two gas purification units which are alternately operated. A gas purification capacity measuring means includes a means including valves for separating a target gas purification unit from a line, an evacuating means for evacuating the separated gas purification unit at a high vacuum, a means including a supply tank for supplying a predetermined very small amount of an impurity gas to an inlet of the high-vacuum separated gas purification unit, an auxiliary tank (e.g., a pressure reduction tank, a metering tank, and a pressure reduction valve), and a vacuum gauge for measuring a change in pressure at the outlet upon supply of the impurity gas to the inlet. In the gas purification apparatus having gas purification units each incorporating a getter material, the gas purification capacity of each gas purification unit can be more accurately and easily measured.
摘要翻译：气体净化装置具有交替操作的两个气体净化单元。气体净化能力测量装置包括一个装置，它包括用于从一条管线上分离一个目标气体净化单元的阀门，一个用于在高真空下排空分离的气体净化单元的排气装置，一个装置，该装置包括供给罐，用于提供预定的极少量的杂质气体输送到高真空分离气体净化单元的入口，辅助箱（例如减压箱，计量罐和减压阀）和用于测量压力变化的真空计在向入口供应杂质气体时的出口。在具有各自含有吸气剂材料的气体净化单元的气体净化装置中，能够更准确，容易地测量各气体净化单元的气体净化能力。

5. 发明授权

US08222649B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08222649B2
公开(公告)日：2012-07-17
申请号：US12161592
申请日：2006-11-17
申请人： Naruhisa Miura , Keiko Fujihira , Kenichi Otsuka , Masayuki Imaizumi
发明人： Naruhisa Miura , Keiko Fujihira , Kenichi Otsuka , Masayuki Imaizumi
IPC分类号： H01L29/161 , H01L29/167 , H01L21/36
CPC分类号： H01L29/0661 , H01L29/0615 , H01L29/0878 , H01L29/1608 , H01L29/7811
摘要： A semiconductor device and a method of manufacturing the same, to appropriately determine an impurity concentration distribution of a field relieving region and reduce an ON-resistance. The semiconductor device includes a substrate, a first drift layer, a second drift layer, a first well region, a second well region, a current control region, and a field relieving region. The first well region is disposed continuously from an end portion adjacent to the vicinity of outer peripheral portion of the second drift layer to a portion of the first drift layer below the vicinity of outer peripheral portion. The field relieving region is so disposed in the first drift layer as to be adjacent to the first well region.
摘要翻译：一种半导体器件及其制造方法，用于适当地确定场释放区域的杂质浓度分布并降低导通电阻。半导体器件包括衬底，第一漂移层，第二漂移层，第一阱区，第二阱区，电流控制区和场释放区。第一阱区从与第二漂移层的外周部附近相邻的端部连续配置到第一漂移层的位于外周部附近的部分。场解除区域被布置在第一漂移层中以与第一阱区域相邻。

6. 发明授权

US08037781B2 Telescoping steering system and water vehicle including the same 有权
标题翻译：伸缩转向系统和水车包括相同
公开(公告)号：US08037781B2
公开(公告)日：2011-10-18
申请号：US12178081
申请日：2008-07-23
申请人： Michael Augustin Curtin , Kenichi Otsuka
发明人： Michael Augustin Curtin , Kenichi Otsuka
IPC分类号： B62D1/18 , B63H25/04
CPC分类号： B63H25/02 , B62K21/16 , B63H2025/024 , Y10T74/20792
摘要： A steering system for a water vehicle includes a housing having a substantially cylindrical member, at least one case member extending through the substantially cylindrical member, a column shaft extending through the pair of case members, including at least one elongated hole disposed on opposed side of the column shaft, and being arranged to move relative to the pair of case members and the housing in an axial direction of the column shaft, and a telescoping mechanism partially disposed in the column shaft. One of the pair of case members includes a plurality of detents provided on an inner surface thereof. The telescoping mechanism includes at least one elongated hole disposed at one end portion of the telescoping mechanism, a locking pin extending through the at least one elongated hole in the telescoping mechanism and the at least one elongated hole in the column shaft, and a lever disposed at an opposite end portion from the one end portion of the telescoping mechanism. The lever is movable to move the locking pin into and out of engagement with respective ones of the plurality of detents to enable the column shaft to be selectively moved relative to the pair of case members and the housing and fixed at a desired location relative to the pair of case members and the housing.
摘要翻译：一种用于水车辆的转向系统包括具有基本圆柱形构件的壳体，延伸穿过基本圆柱形构件的至少一个壳体构件，延伸穿过该对壳体构件的柱轴，包括至少一个细长孔，柱轴，并且被布置成沿柱轴的轴向相对于一对壳体构件和壳体移动，以及部分地设置在柱轴中的伸缩机构。一对壳体构件中的一个包括设置在其内表面上的多个棘爪。伸缩机构包括设置在伸缩机构的一个端部处的至少一个细长孔，延伸穿过伸缩机构中的至少一个细长孔和柱轴中的至少一个细长孔的锁定销，在与伸缩机构的一个端部相对的端部处。杠杆是可移动的，以将锁定销移动进入和脱离与多个棘爪中的相应的止动器的接合，以使得柱轴能够相对于一对壳体构件和壳体选择性地移动并固定在相对于一对案件成员和房屋。

7. 发明授权

US06180513B2 Apparatus and method for manufacturing a semiconductor device having a multi-wiring layer structure 失效
标题翻译：一种具有多层结构的半导体器件的制造方法
公开(公告)号：US06180513B2
公开(公告)日：2001-01-30
申请号：US08910007
申请日：1997-08-12
申请人： Mari Otsuka , Kenichi Otsuka
发明人： Mari Otsuka , Kenichi Otsuka
IPC分类号： H01L214763
CPC分类号： H01L21/76843 , H01L21/28518 , H01L21/28562 , H01L21/76879
摘要： Disclosed are an apparatus and a method for manufacturing a semiconductor device. A Si wafer set within an L/UL chamber is transferred under the state of a high vacuum through a transfer chamber into a Ti chamber. The wafer is heated to at least 300° C. within the Ti chamber by a heating mechanism arranged within the Ti chamber. Then, a TiSix film is formed at a bottom portion of a contact hole by a plasma CVD method using an Ar gas supplied through a gas line as a carrier gas and a TiCl4 gas supplied through another gas line as a source gas, Ti in the source gas being self-aligned with Si in the wafer. The wafer having the TiSix film formed therein is transferred through the transfer chamber into a W chamber without being exposed to the air atmosphere. Within the W chamber, a W film is consecutively deposited by a selective CVD method on the TiSix film. The particular technique makes it possible to form the TiSix film of a high quality at a bottom portion of the contact hole even if the contact hole has a large aspect ratio.
摘要翻译：公开了一种用于制造半导体器件的装置和方法。 L / UL室内的Si晶片在高真空状态下通过转移室转移到Ti室中。通过设置在Ti室内的加热机构将晶片加热至Ti室内至少300℃。然后，通过等离子体CVD法，使用通过气体管线作为载气供给的Ar气体和通过另一气体管线作为源气体供给的TiCl 4气体，在接触孔的底部形成TiSix膜，Ti 源气体与晶片中的Si自对准。其中形成有TiSix膜的晶片通过传送室转移到W室中而不暴露于空气气氛。在W室内，通过选择性CVD法在TiSix膜上连续沉积W膜。特别的技术使得即使接触孔具有大的纵横比，也可以在接触孔的底部形成高品质的TiSix膜。

8. 发明授权

US4810285A Process for preparing spherical copper fine powder 失效
标题翻译：制备球形铜细粉的工艺
公开(公告)号：US4810285A
公开(公告)日：1989-03-07
申请号：US170349
申请日：1988-03-18
申请人： Kenichi Otsuka , Minoru Nitta
发明人： Kenichi Otsuka , Minoru Nitta
IPC分类号： B22F9/28 , H01B1/02 , B22F9/12
CPC分类号： B22F9/28 , H01B1/02 , Y10S75/953
摘要： In a process for preparing a spherical copper fine powder having an average grain size ranging from 0.1 .mu.m to a few .mu.m, by use of chemical vapor deposition of cuprous chloride vapor with a reducing gas, the vapor deposition zone is maintained at a temperature ranging 900.degree. C. to less than 1,150.degree. C. and the generated particles are quenched subsequently. The generated powder is utilized as a conductive powder which is the main component of a conductive paste.
摘要翻译：在制备平均粒径为0.1μm至几μm的球形铜细粉末的方法中，通过使用还原气体的化学气相沉积氯化亚铜蒸汽，蒸气区保持在温度 900℃至小于1150℃，随后产生的颗粒骤冷。所产生的粉末用作导电浆料的主要成分的导电粉末。

9. 发明授权

US4371440A Method of treating a waste water rich in protein 失效
标题翻译：处理富含蛋白质的废水的方法
公开(公告)号：US4371440A
公开(公告)日：1983-02-01
申请号：US304965
申请日：1981-09-23
申请人： Kiyoshi Yoshizawa , Kenichi Otsuka , Kikuo Nojiro , Takeo Koizumi , Katsuyoshi Mitsutomi , Seiji Nakamura
发明人： Kiyoshi Yoshizawa , Kenichi Otsuka , Kikuo Nojiro , Takeo Koizumi , Katsuyoshi Mitsutomi , Seiji Nakamura
IPC分类号： C02F3/34 , C12N1/16
CPC分类号： C02F3/34 , C12N1/16 , Y10S210/905 , Y10S435/921 , Y10S435/94
摘要： Newly isolated yeasts assimilating a high amount of protein are added to a waste water rich in protein thereby making such yeasts assimilate protein, so that the B.O.D. of the waste water is efficiently decreased.
摘要翻译：将含有大量蛋白质的新分离的酵母加入富含蛋白质的废水中，从而使这种酵母同化蛋白质，从而使B.O.D. 的废水有效降低。

10. 发明授权

US4349867A Control apparatus for a cycloconverter 失效
标题翻译：循环变频器的控制装置
公开(公告)号：US4349867A
公开(公告)日：1982-09-14
申请号：US241100
申请日：1981-03-06
申请人： Kenichi Otsuka , Hiroshi Uchino , Kihei Nakajima
发明人： Kenichi Otsuka , Hiroshi Uchino , Kihei Nakajima
IPC分类号： H02M5/27 , H02M5/257
CPC分类号： H02M5/27 , H02M5/273
摘要： A control apparatus for a cycloconverter includes m sets of bridge converters connected between the input terminals of an m-phase load (m.gtoreq.3) and is applied for a cycloconverter of which the common connection point of the bridge converters is disconnected from a neutral point of the load. The output voltage of each bridge converter is controlled by a reference voltage signal during a 1/m period of one cycle of the load voltage. The center of the 1/m period is located at a positive or negative maximum amplitude point of the load voltage. The output voltage is also controlled during the remaining period of (1-1/m) by a phase control input signal corresponding to a difference between a reference current signal and the load current. The reference voltage signal and the phase control input signal are selected by switching signals from a logic circuit for detecting phase voltages of the load to alternately be applied to the phase control circuits.
摘要翻译：用于循环换流器的控制装置包括连接在m相负载（m> / = 3）的输入端之间的m组桥式变换器，并被应用于其中桥式变流器的公共连接点与中性点的负载。在负载电压的一个周期的1 / m周期内，每个桥式变换器的输出电压由参考电压信号控制。 1 / m周期的中心位于负载电压的正或负最大振幅点。输出电压也在（1-1 / m）的剩余时间内通过对应于参考电流信号和负载电流之间的差的相位控制输入信号来控制。通过从用于检测负载的相电压的逻辑电路的信号切换来交替地施加到相位控制电路来选择参考电压信号和相位控制输入信号。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式