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1. 发明申请

US20050170104A1 Stress-tuned, single-layer silicon nitride film 审中-公开
标题翻译：应力调整的单层氮化硅膜
公开(公告)号：US20050170104A1
公开(公告)日：2005-08-04
申请号：US10768577
申请日：2004-01-29
申请人： KeeBum Jung , Sum-Yee Tang , Martin Seamons , Reza Arghavani , Eller Juco
发明人： KeeBum Jung , Sum-Yee Tang , Martin Seamons , Reza Arghavani , Eller Juco
IPC分类号： C23C16/34 , H01L21/314 , H01L21/318 , H05H1/24 , C23C16/00
CPC分类号： H01L21/0217 , C23C16/345 , H01J37/32165 , H01L21/02274 , H01L21/3185 , H01L29/7842 , H01L29/7843
摘要： We have discovered that is possible to tune the stress of a single-layer silicon nitride film by manipulating certain film deposition parameters. These parameters include: use of multiple (typically dual) power input sources operating within different frequency ranges; the deposition temperature; the process chamber pressure; and the composition of the deposition source gas. In particular, we have found that it is possible to produce a single-layer, thin (300 Å to 1000 Å thickness) silicon nitride film having a stress tuned to be within the range of about −1.4 GPa (compressive) to about +1.5 GPa (tensile) by depositing the film by PECVD, in a single deposition step, at a substrate temperature within the range of about 375° C. to about 525 ° C., and over a process chamber pressure ranging from about 2 Torr to about 15 Torr.
摘要翻译：我们已经发现可以通过操纵某些膜沉积参数来调节单层氮化硅膜的应力。这些参数包括：使用在不同频率范围内工作的多个（通常为双重）电源输入源; 沉积温度; 处理室压力; 和沉积源气体的组成。特别地，我们已经发现可以生产具有调节在约-1.4GPa（压缩）至约+1.5范围内的应力的单层薄（厚度为300埃）的氮化硅膜 GPa（拉伸）通过在单一沉积步骤中通过PECVD沉积膜，在约375℃至约525℃范围内的衬底温度下，并且在约2托至约 15乇

2. 发明申请

US20080084650A1 APPARATUS AND METHOD FOR SUBSTRATE CLAMPING IN A PLASMA CHAMBER 审中-公开
标题翻译：用于在等离子体室中衬底夹紧的装置和方法
公开(公告)号：US20080084650A1
公开(公告)日：2008-04-10
申请号：US11866646
申请日：2007-10-03
申请人： Ganesh Balasubramanian , Amit Bansal , Eller Juco , Mohamad Ayoub , Hyung-Joon Kim , Karthik Janakiraman , Sudha Rathi , Deenesh Padhi , Martin Seamons , Visweswaren Sivaramakrishnan , Bok Kim , Amir Al-Bayati , Derek Witty , Hichem M'Saad , Anton Baryshnikov , Chiu Chan , Shuang Liu
发明人： Ganesh Balasubramanian , Amit Bansal , Eller Juco , Mohamad Ayoub , Hyung-Joon Kim , Karthik Janakiraman , Sudha Rathi , Deenesh Padhi , Martin Seamons , Visweswaren Sivaramakrishnan , Bok Kim , Amir Al-Bayati , Derek Witty , Hichem M'Saad , Anton Baryshnikov , Chiu Chan , Shuang Liu
IPC分类号： H01L21/683
CPC分类号： H01L21/6831 , C23C16/52 , H01J37/32431 , H01L21/67069 , H01L21/67253
摘要： The present invention generally provides methods and apparatus for monitoring and maintaining flatness of a substrate in a plasma reactor. Certain embodiments of the present invention provide a method for processing a substrate comprising positioning the substrate on an electrostatic chuck, applying an RF power between the an electrode in the electrostatic chuck and a counter electrode positioned parallel to the electrostatic chuck, applying a DC bias to the electrode in the electrostatic chuck to clamp the substrate on the electrostatic chuck, and measuring an imaginary impedance of the electrostatic chuck.
摘要翻译：本发明通常提供了用于监测和维持等离子体反应器中的基板的平坦度的方法和装置。本发明的某些实施例提供了一种处理衬底的方法，包括将衬底定位在静电吸盘上，在静电吸盘中的电极与平行于静电吸盘的对置电极之间施加RF功率，将DC偏压施加到静电卡盘中的电极将基板夹在静电卡盘上，并测量静电卡盘的假想阻抗。

3. 发明授权

US5994678A Apparatus for ceramic pedestal and metal shaft assembly 失效
标题翻译：陶瓷基座和金属轴组件的装置
公开(公告)号：US5994678A
公开(公告)日：1999-11-30
申请号：US798004
申请日：1997-02-12
申请人： Jun Zhao , Talex Sajoto , Leonid Selyutin , Charles Dornfest , Stefan Wolff , Lee Luo , Eller Juco
发明人： Jun Zhao , Talex Sajoto , Leonid Selyutin , Charles Dornfest , Stefan Wolff , Lee Luo , Eller Juco
IPC分类号： C23C16/458 , C23C16/46 , C23C16/509 , H05B3/06 , C23C16/00
CPC分类号： C23C16/463 , C23C16/4586 , C23C16/46 , C23C16/5096
摘要： The present invention provides systems, methods and apparatus for depositing titanium films at rates up to 200 .ANG./minute on semiconductor substrates from a titanium tetrachloride source. In accordance with an embodiment of the invention, a ceramic heater assembly with an integrated RF plane for bottom powered RF capability allows PECVD deposition at a temperature of at least 400.degree. C. for more efficient plasma treatment. A thermal choke isolates the heater from its support shaft, reducing the thermal gradient across the heater to reduce the risk of breakage and improving temperature uniformity of the heater. A deposition system incorporates a flow restrictor ring and other features that allow a 15 liters/minute flow rate through the chamber with minimal backside deposition and minimized deposition on the bottom of the chamber, thereby reducing the frequency of chamber cleanings, and reducing clean time and seasoning. Deposition and clean processes are also further embodiments of the present invention.
摘要翻译：本发明提供了用于从四氯化钛源在半导体衬底上以高达200安培/分钟的速率沉积钛膜的系统，方法和装置。根据本发明的实施例，具有用于底部供电RF能力的集成射频平面的陶瓷加热器组件允许在至少400℃的温度下进行PECVD沉积以用于更有效的等离子体处理。热扼流器将加热器与其支撑轴隔离，减少了加热器两端的热梯度，以减少加热器断裂的危险并改善加热器的温度均匀性。沉积系统包括限流器环和其它特征，其允许通过腔室的15升/分钟的流速具有最小的背侧沉积并且最小化在室的底部上的沉积，从而降低室清洁的频率，并且减少清洁时间和调味料。沉积和清洁过程也是本发明的进一步的实施方案。

4. 发明申请

US20050235916A1 Universal mid-frquency matching network 失效
标题翻译：通用中频匹配网络
公开(公告)号：US20050235916A1
公开(公告)日：2005-10-27
申请号：US10829520
申请日：2004-04-21
申请人： Eller Juco , Visweswaren Sivaramakrishnan , Mario Silvetti , Talex Sajoto
发明人： Eller Juco , Visweswaren Sivaramakrishnan , Mario Silvetti , Talex Sajoto
IPC分类号： C23C16/00 , C23C16/509 , H01J37/32
CPC分类号： H01J37/32082 , C23C16/5096 , H01J37/32183
摘要： A substrate processing system is provided with a processing chamber, an alternating voltage supply, and an impedance matching network. The processing chamber holds a substrate during processing and the alternating voltage supply is connected with the processing chamber to capacitively couple energy to a plasma formed within the processing chamber. The impedance matching network is coupled with the alternating voltage supply and has a variable resistive element and a variable reactive element, whose states respectively define distinct real and imaginary parts of an impedance.
摘要翻译：衬底处理系统设置有处理室，交流电压源和阻抗匹配网络。处理室在处理期间保持基板，并且交流电压供应与处理室连接以将能量电容耦合到处理室内形成的等离子体。阻抗匹配网络与交流电源耦合，并具有可变电阻元件和可变无功元件，其状态分别定义阻抗的不同实部和虚部。

5. 发明申请

US20060027165A1 Heated gas box for PECVD applications 有权
标题翻译：用于PECVD应用的加热气箱
公开(公告)号：US20060027165A1
公开(公告)日：2006-02-09
申请号：US10910269
申请日：2004-08-03
申请人： Soovo Sen , Inna Shmurun , Thomas Nowak , Nancy Fung , Brian Hopper , Andrzej Kaszuba , Eller Juco
发明人： Soovo Sen , Inna Shmurun , Thomas Nowak , Nancy Fung , Brian Hopper , Andrzej Kaszuba , Eller Juco
IPC分类号： C23C16/00
CPC分类号： H01L21/67103
摘要： Method and apparatus for obtaining a tailored heat transfer profile in a chamber housing a microprocessor manufacturing process, including estimating heat transfer properties of the chamber; estimating heat absorptive properties of a wafer; adjusting the physical characteristics of the chamber to correct the heat transfer properties; and utilizing the chamber for manufacturing microprocessors.
摘要翻译：用于在容纳微处理器制造过程的腔室中获得定制的传热轮廓的方法和装置，包括估计腔室的传热特性; 估计晶片的吸热性能; 调整室的物理特性以校正传热性能; 并利用该腔室制造微处理器。

6. 发明授权

US07628863B2 Heated gas box for PECVD applications 有权
标题翻译：用于PECVD应用的加热气箱
公开(公告)号：US07628863B2
公开(公告)日：2009-12-08
申请号：US10910269
申请日：2004-08-03
申请人： Soovo Sen , Inna Shmurun , Thomas Nowak , Nancy Fung , Brian Hopper , Andrzej Kaszuba , Eller Juco
发明人： Soovo Sen , Inna Shmurun , Thomas Nowak , Nancy Fung , Brian Hopper , Andrzej Kaszuba , Eller Juco
IPC分类号： C23C16/455 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： H01L21/67103
摘要： A method and apparatus for a chamber for chemical vapor deposition on a substrate in a processing region comprising a gas box having a heated lid comprising a gas inlet passage, and a face plate connected to the heated lid positioned to conduct gas from the heated gas box to a substrate processing region. Also, a method for providing heat to a chemical vapor deposition chamber comprising supplying heat to a lid of a gas box, and heating a face plate connected to the gas box by heat transfer from the lid.
摘要翻译：一种用于在处理区域中的用于化学气相沉积在基板上的室的方法和装置，包括具有加热盖的气体箱，所述加热盖包括气体入口通道，以及连接到加热盖的面板，所述面板定位成将来自加热气体箱到基板处理区域。另外，一种向化学气相沉积室提供热量的方法，包括向燃气箱的盖子供给热量，以及通过从盖子的热传递来加热连接到气体箱的面板。

7. 发明申请

US20070107660A9 Heated gas box for PECVD applications 有权
标题翻译：用于PECVD应用的加热气箱
公开(公告)号：US20070107660A9
公开(公告)日：2007-05-17
申请号：US10910269
申请日：2004-08-03
申请人： Soovo Sen , Inna Shmurun , Thomas Nowak , Nancy Fung , Brian Hopper , Andrzej Kaszuba , Eller Juco
发明人： Soovo Sen , Inna Shmurun , Thomas Nowak , Nancy Fung , Brian Hopper , Andrzej Kaszuba , Eller Juco
IPC分类号： C23C16/00
CPC分类号： H01L21/67103
摘要： A method and apparatus for a chamber for chemical vapor deposition on a substrate in a processing region comprising a gas box having a heated lid comprising a gas inlet passage, and a face plate connected to the heated lid positioned to conduct gas from the heated gas box to a substrate processing region. Also, a method for providing heat to a chemical vapor deposition chamber comprising supplying heat to a lid of a gas box, and heating a face plate connected to the gas box by heat transfer from the lid.
摘要翻译：一种用于在处理区域中的用于化学气相沉积在基板上的室的方法和装置，包括具有加热盖的气体箱，所述加热盖包括气体入口通道，以及连接到加热盖的面板，所述面板定位成将来自加热气体箱到基板处理区域。另外，一种向化学气相沉积室提供热量的方法，包括向燃气箱的盖子供给热量，以及通过从盖子的热传递来加热连接到气体箱的面板。

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