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1. 发明授权

US06455874B1 Thin film transistor and fabrication method thereof 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US06455874B1
公开(公告)日：2002-09-24
申请号：US09893655
申请日：2001-06-29
申请人： Kee-Chan Park , Juhn-Suk Yoo , Min-Koo Han
发明人： Kee-Chan Park , Juhn-Suk Yoo , Min-Koo Han
IPC分类号： H01L2904
CPC分类号： H01L29/78696 , H01L27/1296 , H01L29/66757 , H01L29/78618 , H01L29/78666 , H01L29/78675
摘要： The present invention discloses a thin film transistor (TFT) and fabrication method thereof for a liquid crystal display device. The thin film transistor includes a substrate; a buffer layer on the substrate; an amorphous silicon layer having a pure amorphous silicon area and doped amorphous silicon areas, the pure amorphous silicon area having vertical offsets in both sides thereof, the doped amorphous silicon areas having source and drain areas, the doped amorphous silicon areas being doped by a dopant, the source and drain areas positioned on both sides of the pure amorphous silicon area and etched to expose the vertical offsets; an oxidized layer on the pure amorphous silicon area; a polycrystalline silicon layer on the oxidized layer; a gate insulating layer on the polycrystalline silicon layer; a gate electrode on the gate insulating layer; an inter layer insulator having first and second contact holes, the inter layer insulator covering the amorphous silicon layer, the oxidized layer, the polycrystalline silicon layer, the gate insulating layer, and the gate electrode; and source and drain electrodes contacting the source areas through the first contact hole and the drain area through the second contact hole, respectively.
摘要翻译：本发明公开了一种用于液晶显示装置的薄膜晶体管（TFT）及其制造方法。薄膜晶体管包括基板; 衬底上的缓冲层; 具有纯非晶硅区域和掺杂的非晶硅区域的非晶硅层，纯非晶硅区域在其两侧具有垂直偏移，掺杂的非晶硅区域具有源极和漏极区域，掺杂的非晶硅区域被掺杂剂掺杂源极和漏极区域位于纯非晶硅区域的两侧，并被蚀刻以暴露垂直偏移; 在纯非晶硅区域上的氧化层; 氧化层上的多晶硅层; 多晶硅层上的栅极绝缘层; 栅绝缘层上的栅电极; 具有第一和第二接触孔的层间绝缘体，覆盖非晶硅层，氧化层，多晶硅层，栅极绝缘层和栅电极的层间绝缘体; 以及源极和漏极电极分别通过第一接触孔和漏极区域通过第二接触孔接触源极区域。

2. 发明授权

US06566180B2 Thin film transistor and fabrication method thereof 有权
公开(公告)号：US06566180B2
公开(公告)日：2003-05-20
申请号：US10133314
申请日：2002-04-29
申请人： Kee-Chan Park , Juhn-Suk Yoo , Min-Koo Han
发明人： Kee-Chan Park , Juhn-Suk Yoo , Min-Koo Han
IPC分类号： H01L2184
CPC分类号： H01L29/78696 , H01L27/1296 , H01L29/66757 , H01L29/78618 , H01L29/78666 , H01L29/78675
摘要： The present invention discloses a thin film transistor (TFT) and fabrication method thereof for a liquid crystal display device. The thin film transistor includes a substrate; a buffer layer on the substrate; an amorphous silicon layer having a pure amorphous silicon area and doped amorphous silicon areas, the pure amorphous silicon area having vertical offsets in both sides thereof, the doped amorphous silicon areas having source and drain areas, the doped amorphous silicon areas being doped by a dopant, the source and drain areas positioned on both sides of the pure amorphous silicon area and etched to expose the vertical offsets; an oxidized layer on the pure amorphous silicon area; a polycrystalline silicon layer on the oxidized layer; a gate insulating layer on the polycrystalline silicon layer; a gate electrode on the gate insulating layer; an inter layer insulator having first and second contact holes, the inter layer insulator covering the amorphous silicon layer, the oxidized layer, the polycrystalline silicon layer, the gate insulating layer, and the gate electrode; and source and drain electrodes contacting the source areas through the first contact hole and the drain area through the second contact hole, respectively.

3. 发明授权

US07586358B2 Level shifter and driving method 有权
标题翻译：电平转换器和驱动方式
公开(公告)号：US07586358B2
公开(公告)日：2009-09-08
申请号：US11771138
申请日：2007-06-29
申请人： Kee-Chan Park , Min-Koo Han , Woo-Jin Nam , Jae-Hoon Lee
发明人： Kee-Chan Park , Min-Koo Han , Woo-Jin Nam , Jae-Hoon Lee
IPC分类号： H03L5/00
CPC分类号： H03K3/35613 , G09G3/3611 , G09G3/3648 , G09G2300/0408 , G09G2310/0289 , G09G2310/08
摘要： A level shifter includes; a level conversion unit which receives a first input signal and a second input signal, wherein the second input signal is an inversion of the first input signal, and generates a first output signal having substantially a same phase of the first input signal and a voltage which is higher than the first input signal and a second output signal having substantially a same phase as the first input signal and a voltage which is lower than the first input signal; and wherein the level shifter further includes an amplifying unit which receives the first and second output signals and generates a third output signal having substantially a same phase as the first input signal and an amplitude which is greater than the first input signal.
摘要翻译：电平转换器包括：电平转换单元，其接收第一输入信号和第二输入信号，其中所述第二输入信号是所述第一输入信号的反相，并且产生具有与所述第一输入信号基本上相同相位的第一输出信号和高于第一输入信号，第二输出信号具有与第一输入信号基本相同的相位和低于第一输入信号的电压; 并且其中所述电平移位器还包括放大单元，其接收所述第一和第二输出信号，并产生具有与所述第一输入信号基本相同的相位的第三输出信号和大于所述第一输入信号的幅度。

4. 发明授权

US07843446B2 Direct current to direct current converting circuit, display apparatus having the same and method of driving the direct current to direct current converting circuit 有权
标题翻译：直流电流转换电路，具有相同的显示装置以及将直流驱动到直流转换电路的方法
公开(公告)号：US07843446B2
公开(公告)日：2010-11-30
申请号：US11772583
申请日：2007-07-02
申请人： Kee-Chan Park , Min-Koo Han , Woo-Jin Nam , Hye-Jin Lee
发明人： Kee-Chan Park , Min-Koo Han , Woo-Jin Nam , Hye-Jin Lee
IPC分类号： G09G3/36 , G09G5/00
CPC分类号： H02M3/073 , G09G3/3611 , G09G3/3648 , G09G3/3696 , G09G2300/0408 , G09G2300/0426 , G09G2330/02
摘要： In a DC-DC converting circuit, a charge pumping part receives an input voltage, a first clock and a second clock and outputs first and second voltages to first and second nodes, which are boosted by high voltages of the first and second clocks with respect to the input voltage. An output part is connected to the first and second nodes of the charge pumping part, and a level boosting part turns on or turns off the charge pumping part in response to the first and second clocks. The output part outputs the first and second voltages through an output terminal during a high period of the first clock and during a high period of the second clock, respectively. Thus, an output voltage having a voltage level corresponding to two times that of the input voltage may be output from the output terminal while the first and second clocks are provided.
摘要翻译：在DC-DC转换电路中，电荷泵送部分接收输入电压，第一时钟和第二时钟，并将第一和第二电压输出到第一和第二节点，第一和第二节点被第一和第二时钟的高电压升压，到输入电压。输出部分连接到电荷泵送部分的第一和第二节点，并且电平升高部分响应于第一和第二时钟而导通或关闭电荷泵送部分。输出部分分别在第一时钟的高周期期间和在第二时钟的高周期期间通过输出端子输出第一和第二电压。因此，当提供第一和第二时钟时，可以从输出端子输出具有对应于输入电压的两倍的电压电平的输出电压。

5. 发明申请

US20080122812A1 DIRECT CURRENT TO DIRECT CURRENT CONVERTING CIRCUIT, DISPLAY APPARATUS HAVING THE SAME AND METHOD OF DRIVING THE DIRECT CURRENT TO DIRECT CURRENT CONVERTING CIRCUIT 有权
标题翻译：直流电直流电流转换电路，具有该直流电流转换电路的显示装置和驱动直流电直接转换电流的方法
公开(公告)号：US20080122812A1
公开(公告)日：2008-05-29
申请号：US11772583
申请日：2007-07-02
申请人： Kee-Chan Park , Min-Koo Han , Woo-Jin Nam , Hya-Jin Lee
发明人： Kee-Chan Park , Min-Koo Han , Woo-Jin Nam , Hya-Jin Lee
IPC分类号： G06F3/038 , G05F1/10 , H02M3/07
CPC分类号： H02M3/073 , G09G3/3611 , G09G3/3648 , G09G3/3696 , G09G2300/0408 , G09G2300/0426 , G09G2330/02
摘要： In a DC-DC converting circuit, a charge pumping part receives an input voltage, a first clock and a second clock and outputs first and second voltages to first and second nodes, which are boosted by high voltages of the first and second clocks with respect to the input voltage. An output part is connected to the first and second nodes of the charge pumping part, and a level boosting part turns on or turns off the charge pumping part in response to the first and second clocks. The output part outputs the first and second voltages through an output terminal during a high period of the first clock and during a high period of the second clock, respectively. Thus, an output voltage having a voltage level corresponding to two times that of the input voltage may be output from the output terminal while the first and second clocks are provided.
摘要翻译：在DC-DC转换电路中，电荷泵送部分接收输入电压，第一时钟和第二时钟，并将第一和第二电压输出到第一和第二节点，第一和第二节点被第一和第二时钟的高电压升压，到输入电压。输出部分连接到电荷泵送部分的第一和第二节点，并且电平升高部分响应于第一和第二时钟而导通或关闭电荷泵送部分。输出部分分别在第一时钟的高周期期间和在第二时钟的高周期期间通过输出端子输出第一和第二电压。因此，当提供第一和第二时钟时，可以从输出端子输出具有对应于输入电压的两倍的电压电平的输出电压。

6. 发明授权

US07868280B2 Illumination sensing apparatus, driving method thereof and display device having the illumination sensing apparatus 有权
标题翻译：照明感测装置及其驱动方法以及具有照明感测装置的显示装置
公开(公告)号：US07868280B2
公开(公告)日：2011-01-11
申请号：US12179360
申请日：2008-07-24
申请人： Hyun-Sang Park , Min-Koo Han , Doo-Hyung Woo , Jae-Beom Choi , Kwang-Sub Shin
发明人： Hyun-Sang Park , Min-Koo Han , Doo-Hyung Woo , Jae-Beom Choi , Kwang-Sub Shin
IPC分类号： G01J1/32 , G02F1/1335
CPC分类号： G09G3/3406 , G09G2320/0626 , G09G2330/021 , G09G2360/144
摘要： Provided are an illumination sensing apparatus, a driving method thereof and a display device having the illumination sensing apparatus. The illumination sensing apparatus includes an illumination sensor unit configured to generate a sensing signal according to peripheral illumination, an illumination determination unit configured to generate an illumination signal according to the sensing signal, and an illumination judgment unit configured to output a brightness select signal using the illumination signal, wherein the illumination sensor unit controls sensitivity of sensing the peripheral illumination to be varied according to the brightness select signal. Therefore, the sensitivity of an illumination sensor is automatically controlled according to the peripheral illumination, thus improving peripheral illumination sensibility. Further, an illumination signal corresponding to the peripheral illumination is provided to a light source module to thereby control the output brightness of the light source module, which makes it possible to reduce power consumption and improve image quality.
摘要翻译：提供了一种照明感测装置，其驱动方法和具有该照明感测装置的显示装置。该照明感测装置具备：照明传感器单元，被配置为根据周边照明产生感测信号;照明判定单元，其根据感测信号生成照明信号;照明判断单元，其使用照明信号，其中所述照明传感器单元控制根据所述亮度选择信号来感测要周边照明的灵敏度。因此，根据周边照明自动控制照明传感器的灵敏度，从而提高周边照明灵敏度。此外，将与周边照明相对应的照明信号提供给光源模块，从而控制光源模块的输出亮度，这使得可以降低功耗并提高图像质量。

7. 发明申请

US20060256057A1 Pixel structure using voltage programming-type for active matrix organic light emitting device 有权
标题翻译：使用有源矩阵有机发光器件的电压编程类型的像素结构
公开(公告)号：US20060256057A1
公开(公告)日：2006-11-16
申请号：US11412525
申请日：2006-04-27
申请人： Min-Koo Han , Jae-Hoon Lee
发明人： Min-Koo Han , Jae-Hoon Lee
IPC分类号： G09G3/36
CPC分类号： G09G3/3258 , G09G2300/0819 , G09G2300/0842 , G09G2320/0233
摘要： A pixel structure using a voltage programming type active matrix organic light emitting diode (OLED) which can minimize a current deterioration phenomenon is disclosed. The pixel structure includes a fifth TFT receiving an external management signal EMS through its gate, having a drain region connected to a cathode part of an OLED, and receiving an input of an OLED current through its source-drain current path when the OLED emits light, a fourth TFT receiving a set scan signal SCAN through its gate and having source and drain regions connected to gate and drain parts of a third TFT T3, respectively, the third TFT T3 being a current driving transistor for determining the OLED current when the OLED emits light, a capacitor C having upper and lower plates connected to the gate part of the third TFT T3 and a ground voltage VSS, respectively, a first TFT receiving the SCAN signal through its gate and transferring a data voltage to a source region of the third TFT T3, a second TFT receiving the EMS signal through its gate and connecting the lower part of the capacitor C to the source region of the third TFT T3, and a sixth TFT having source and drain regions connected to an external clock signal CLK and the gate region of the third TFT T3, respectively, and having a gate connected to the gate part of the third TFT T3. An anode part of the OLED receives a voltage VDD.
摘要翻译：公开了一种可以使电流劣化现象最小化的电压编程型有源矩阵有机发光二极管（OLED）的像素结构。像素结构包括通过其栅极接收外部管理信号EMS的第五TFT，具有连接到OLED的阴极部分的漏极区域，并且当OLED发光时，通过其源极 - 漏极电流路径接收OLED电流的输入，第四TFT通过其栅极接收设置的扫描信号SCAN，并且分别具有连接到第三TFT T 3的栅极和漏极部分的源极和漏极区域，第三TFT T 3是用于确定OLED电流的电流驱动晶体管， OLED发光，具有连接到第三TFT T 3的栅极部分的上板和下板的电容器C和接地电压VSS分别通过其栅极接收SCAN信号的第一TFT并将数据电压传送到源极区域，第二TFT通过其栅极接收EMS信号并将电容器C的下部连接到第三TFT T 3的源极区域，以及第六TFT，其具有源极和栅极连接到外部时钟信号CLK的n个区域和第三TFT T 3的栅极区域，并且具有连接到第三TFT T 3的栅极部分的栅极。 OLED的阳极部分接收电压VDD。

8. 发明授权

US5840602A Methods of forming nonmonocrystalline silicon-on-insulator thin-film transistors 失效
标题翻译：形成非晶硅绝缘体上薄膜晶体管的方法
公开(公告)号：US5840602A
公开(公告)日：1998-11-24
申请号：US686242
申请日：1996-07-25
申请人： Min-Koo Han , Byung-Hyuk Min , Cheol-Min Park , Byung-Seong Bae
发明人： Min-Koo Han , Byung-Hyuk Min , Cheol-Min Park , Byung-Seong Bae
IPC分类号： H01L29/786 , H01L21/77 , H01L21/84 , H01L27/12 , H01L21/8238
CPC分类号： H01L27/1214
摘要： Methods of forming thin-film transistors include the steps of forming an amorphous silicon (a-Si) layer of predetermined conductivity type on a face of an electrically insulating substrate and then forming a first insulating layer on the amorphous silicon layer. The first insulating layer and amorphous silicon layer are then patterned to define spaced amorphous source and drain regions having exposed sidewalls. An amorphous silicon channel region is then deposited in the space between the source and drain regions and in contact with the sidewalls thereof. An annealing step is then performed to convert the amorphous source, drain and channel regions to polycrystalline silicon, prior to the step of forming an insulated gate electrode on the channel region.
摘要翻译：形成薄膜晶体管的方法包括以下步骤：在电绝缘基板的表面上形成预定导电类型的非晶硅（a-Si）层，然后在非晶硅层上形成第一绝缘层。然后对第一绝缘层和非晶硅层进行构图以限定具有暴露的侧壁的间隔开的无定形源极和漏极区域。然后在源区和漏区之间的空间中沉积非晶硅沟道区，并与其侧壁接触。然后在通道区域上形成绝缘栅电极的步骤之前，执行退火步骤以将非晶硅源，漏极和沟道区域转换为多晶硅。

9. 发明授权

US5804837A Polysilicon thin-film transistor and method for fabricating the same 失效
标题翻译：多晶硅薄膜晶体管及其制造方法
公开(公告)号：US5804837A
公开(公告)日：1998-09-08
申请号：US687630
申请日：1996-07-26
申请人： Min-Koo Han , Byung-Hyuk Min , Cheol-Min Park
发明人： Min-Koo Han , Byung-Hyuk Min , Cheol-Min Park
IPC分类号： H01L21/28 , H01L21/336 , H01L29/49 , H01L29/786 , H01L29/76 , H01L31/036 , H01L31/112
CPC分类号： H01L29/42384 , H01L21/28105 , H01L29/4908 , H01L29/4983 , H01L29/6675 , H01L29/66757 , H01L29/78621
摘要： To accomplish the objects of the present invention, among others, the present invention provides a thin-film transistor that has a channel region operatively having an offset region only during turn-off. Source and drain regions self-aligned with different ends of the channel region. A gate region is formed on a gate insulating layer disposed over the channel region and has a main gate accepting a gate voltage, a subgate which comes into ohmic contact with the source region, and a junction gate for forming a rectifying junction between the main gate and subgate.
摘要翻译：为了实现本发明的目的，除其他之外，本发明提供一种薄膜晶体管，其具有仅在关断期间可操作地具有偏移区域的沟道区。源极和漏极区域与通道区域的不同端部自对准。栅极区域形成在栅极绝缘层上，栅极绝缘层设置在沟道区上方，并且具有接受栅极电压的主栅极，与源极区域欧姆接触的子栅极和用于在主栅极之间形成整流结的结栅极和subgate。

10. 发明授权

US5773852A Shorted anode lateral insulated gate bipolar transistor 失效
标题翻译：短路阳极横向绝缘栅双极晶体管
公开(公告)号：US5773852A
公开(公告)日：1998-06-30
申请号：US679564
申请日：1996-07-15
申请人： Min-Koo Han , Byeong-Hoon Lee , Moo-Sup Lim , Yearn-Ik Choi , Jung-Eon Park , Won-Oh Lee
发明人： Min-Koo Han , Byeong-Hoon Lee , Moo-Sup Lim , Yearn-Ik Choi , Jung-Eon Park , Won-Oh Lee
IPC分类号： H01L29/78 , H01L29/72 , H01L29/739 , H01L29/786 , H01L29/74 , H01L31/111
CPC分类号： H01L29/7394
摘要： A shorted anode lateral insulated gate bipolar transistor includes a semiconductor layer of a first conductivity type, a first current electrode, a second current electrode, a first insulation layer, a first gate electrode, a second gate electrode, a first high concentration impurity region of a second conductivity type, a low concentration impurity region of the second conductivity type, a first high concentration impurity region of the first conductivity type, a second high concentration impurity region of the second conductivity type, a third high concentration impurity region of the second conductivity type, and a second high concentration impurity region of the first conductivity type.
摘要翻译：短路阳极横向绝缘栅双极晶体管包括第一导电类型的半导体层，第一电流电极，第二电流电极，第一绝缘层，第一栅极电极，第二栅极电极，第一高浓度杂质区域第二导电类型的低浓度杂质区，第二导电类型的第一高浓度杂质区，第二导电类型的第一高浓度杂质区，第二导电类型的第二高浓度杂质区，第二导电类型的第二高浓度杂质区，型和第一导电类型的第二高浓度杂质区。

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