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1. 发明申请

US20100101387A1 CRYSTAL GROWING SYSTEM AND METHOD THEREOF 审中-公开
标题翻译：晶体生长系统及其方法
公开(公告)号：US20100101387A1
公开(公告)日：2010-04-29
申请号：US12588656
申请日：2009-10-22
申请人： Kedar Prasad Gupta , Carl Richard Schwerdtfeger, JR. , Govindhan Dhanaraj
发明人： Kedar Prasad Gupta , Carl Richard Schwerdtfeger, JR. , Govindhan Dhanaraj
IPC分类号： B26D9/00 , C30B15/20
CPC分类号： C30B11/003 , C30B11/14 , C30B29/06 , C30B29/12 , C30B29/20 , H01L21/67109 , Y10T83/0524 , Y10T117/1064 , Y10T117/1068
摘要： A controlled heat extraction system and method thereof is disclosed. In one embodiment, a system includes a housing to form a chamber. The system further includes a seed cooling component adapted to support a bottom of the crucible and to receive a coolant fluid to cool the supported portion of the crucible. The system also includes at least one heating element substantially surrounding the seed cooling component and the crucible to heat the crucible, where the seed cooling component along with the crucible is movable relative to the at least one heating element. Furthermore, the system includes an insulating element substantially surrounding the crucible, the seed cooling component and the at least one heating element. Additionally, the system includes a gradient control device (GCD) movable relative to the insulating element, the at least one heating element, the seed cooling component and the crucible over a range of positions.
摘要翻译：公开了一种受控热提取系统及其方法。在一个实施例中，系统包括形成腔室的壳体。该系统还包括适于支撑坩埚底部并接收冷却剂流体以冷却坩埚的支撑部分的种子冷却部件。该系统还包括基本上围绕种子冷却部件和坩埚以加热坩埚的至少一个加热元件，其中种子冷却部件与坩埚一起可相对于至少一个加热元件移动。此外，该系统包括基本上围绕坩埚，种子冷却部件和至少一个加热元件的绝缘元件。另外，该系统包括一梯度控制装置（GCD），该梯度控制装置可相对于绝缘元件移动，至少一个加热元件，种子冷却部件和坩埚在一定范围内。

2. 发明申请

US20110253033A1 CRYSTAL GROWING SYSTEM AND METHOD THEREOF 审中-公开
标题翻译：晶体生长系统及其方法
公开(公告)号：US20110253033A1
公开(公告)日：2011-10-20
申请号：US13095073
申请日：2011-04-27
申请人： Govindhan Dhanaraj , Chandra P. Khattak , Carl Richard Schwerdtfeger, JR. , Kedar Prasad Gupta
发明人： Govindhan Dhanaraj , Chandra P. Khattak , Carl Richard Schwerdtfeger, JR. , Kedar Prasad Gupta
IPC分类号： C30B11/00
CPC分类号： C30B11/003 , C30B11/14 , C30B29/06 , C30B29/12 , C30B29/20 , H01L21/67109 , Y10T117/1092
摘要： Provided is a system and method for growing crystals. The method includes substantially fully covering a seed crystal in a charge material, using a heat source to melt the charge material, cooling the seed crystal to keep the seed crystal at least partially intact as the charge material melts, allowing at least a portion of the seed crystal to melt into the molten charge material, and continually growing the crystal by reducing the temperature of the heat source, moving the molten charge material and seed crystal from the heat source, and increasing a rate of cooling of the seed crystal.
摘要翻译：提供了一种用于生长晶体的系统和方法。该方法包括基本上完全覆盖电荷材料中的晶种，使用热源熔化电荷材料，冷却晶种以使晶种在充电材料熔化时至少部分保持不变，从而允许至少一部分晶种熔化成熔融填充材料，并且通过降低热源的温度，使来自热源的熔融填充材料和晶种的移动，并且提高晶种的冷却速度来不断地生长晶体。

3. 发明申请

US20110179992A1 CRYSTAL GROWTH METHODS AND SYSTEMS 审中-公开
标题翻译：晶体生长方法和系统
公开(公告)号：US20110179992A1
公开(公告)日：2011-07-28
申请号：US12909471
申请日：2010-10-21
申请人： Carl Richard Schwerdtfeger, JR. , Govindhan Dhanaraj , Kedar Prasad Gupta
发明人： Carl Richard Schwerdtfeger, JR. , Govindhan Dhanaraj , Kedar Prasad Gupta
IPC分类号： C30B11/02
CPC分类号： C30B11/003 , C30B11/14 , C30B29/06 , C30B29/20
摘要： Methods and systems related to an improved controlled heat extraction system for crystal growth, such as sapphire crystal growth are described, including methods and systems for mechanical probe-based and pyrometer-based inspection and automation processes, methods and systems for avoiding fusion of components, methods and systems for purging an inspection window, and methods and systems related to alternative crucible shapes.
摘要翻译：描述了与用于晶体生长的改进的受控热萃取系统相关的方法和系统，例如蓝宝石晶体生长，包括用于机械探针和基于高温计的检查和自动化过程的方法和系统，用于避免部件熔合的方法和系统，用于清洗检查窗的方法和系统，以及与替代坩埚形状相关的方法和系统。

4. 发明授权

US06284312B1 Method and apparatus for chemical vapor deposition of polysilicon 失效
标题翻译：多晶硅化学气相沉积的方法和装置
公开(公告)号：US06284312B1
公开(公告)日：2001-09-04
申请号：US09507711
申请日：2000-02-18
申请人： Mohan Chandra , Ijaz Hussain Jafri , Kedar Prasad Gupta , Vishwanath Prasad , Jonathan A. Talbott
发明人： Mohan Chandra , Ijaz Hussain Jafri , Kedar Prasad Gupta , Vishwanath Prasad , Jonathan A. Talbott
IPC分类号： B05D722
CPC分类号： C01B33/027 , C23C16/045 , C23C16/24
摘要： A method and apparatus, and product by process, for the production of bulk polysilicon by broad area chemical vapor deposition, consisting of a quartz envelope and base plate forming a reactor enclosure, with external radiant heaters providing the heat source. A thin wall, edge-defined film fed growth (EFG) silicon tube section is used as the deposition casing and reaction chamber wall. The tube is capped at the top and sealed to the base plate to form the reaction chamber. External heaters radiate heat through the quartz enclosure to heat the tube wall to deposition temperature. A through flow of process gas is introduced to initiate the deposition. A uniform wide surface area deposit occurs on the inside surface of the tube, causing the diameter to become increasingly smaller as the yield accumulates. In a two tube reactor, a smaller core tube is uniformly spaced and supported inside the outer tube for full flow of process gas around the core tube so that deposition occurs on both the outside and inside surface of the core tube. The outer tube may be configured for preheating by a flow of electrical current from the base plate to the cover plate.
摘要翻译：一种用于通过广泛化学气相沉积生产大块多晶硅的方法和装置，以及由形成反应器外壳的石英壳和基板组成的产品，外部辐射加热器提供热源。使用薄壁边缘限定薄膜进料生长（EFG）硅管部分作为沉积套管和反应室壁。管被顶盖顶盖并密封到基板上以形成反应室。外部加热器通过石英外壳辐射热量，以将管壁加热至沉积温度。引入工艺气体的流动以引发沉积。在管的内表面上发生均匀的宽表面积沉积，导致直径随着收率积累而变得越来越小。在双管反应器中，较小的芯管被均匀间隔并支撑在外管内，用于使芯管周围的工艺气体完全流动，从而在芯管的外表面和内表面上均发生沉积。外管可以被配置为通过电流从基板到盖板的预热。

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