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1. 发明授权

US07192687B2 Positive resist composition and method of forming resist pattern using same 失效
标题翻译：正型抗蚀剂组合物和使用其形成抗蚀剂图案的方法
公开(公告)号：US07192687B2
公开(公告)日：2007-03-20
申请号：US10931958
申请日：2004-09-01
申请人： Kazuyuki Nitta , Waki Ohkubo , Satoshi Shimatani
发明人： Kazuyuki Nitta , Waki Ohkubo , Satoshi Shimatani
IPC分类号： G03F7/40 , G03F7/004
CPC分类号： G03F7/0392 , G03F7/0045
摘要： A positive resist composition capable of realizing an improvement in resolution, a reduction in LER, and a reduction in the level of defects, as well as a method of forming a resist pattern. This composition and method provide: a positive resist composition comprising a resin component (A) containing a structural unit (a1) derived from an (α-methyl)hydroxystyrene, represented by a general formula (1) shown below, and a structural unit (a2) represented by a general formula (2) shown below, wherein the solubility rate of the component (A) in a 2.38% by weight aqueous solution of TMAH (tetramethylammonium hydroxide) is within a range from 100 to 1000 Å/second, as well as a method of forming a resist pattern that uses such a composition; (wherein in the general formulas (1) and (2), R represents a hydrogen atom or a methyl group).
摘要翻译：能够实现分辨率提高，LER降低和缺陷水平降低的正型抗蚀剂组合物以及形成抗蚀剂图案的方法。该组合物和方法提供：包含含有由（α-甲基）羟基苯乙烯衍生的结构单元（a1）的树脂组分（A）的正性抗蚀剂组合物，由下述通式（1）表示，和结构单元（ a2），其中组分（A）在2.38重量％的TMAH（氢氧化四甲铵）水溶液中的溶解度在100至1000埃/秒的范围内，如以及形成使用这种组合物的抗蚀剂图案的方法; （其中在通式（1）和（2）中，R表示氢原子或甲基）。

2. 发明申请

US20050079445A1 Positive resist composition and method of forming resist pattern using same 失效
标题翻译：正型抗蚀剂组合物和使用其形成抗蚀剂图案的方法
公开(公告)号：US20050079445A1
公开(公告)日：2005-04-14
申请号：US10931958
申请日：2004-09-01
申请人： Kazuyuki Nitta , Waki Ohkubo , Satoshi Shimatani
发明人： Kazuyuki Nitta , Waki Ohkubo , Satoshi Shimatani
IPC分类号： C08F212/14 , G03C1/76 , G03F7/004 , G03F7/022 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0392 , G03F7/0045
摘要： A positive resist composition capable of realizing an improvement in resolution, a reduction in LER, and a reduction in the level of defects, as well as a method of forming a resist pattern. This composition and method provide: a positive resist composition comprising a resin component (A) containing a structural unit (a1) derived from an (α-methyl)hydroxystyrene, represented by a general formula (1) shown below, and a structural unit (a2) represented by a general formula (2) shown below, wherein the solubility rate of the component (A) in a 2.38% by weight aqueous solution of TMAH (tetramethylammonium hydroxide) is within a range from 100 to 1000 Å/second, as well as a method of forming a resist pattern that uses such a composition. (wherein in the general formulas (1) and (2), R represents a hydrogen atom or a methyl group)
摘要翻译：能够实现分辨率提高，LER降低和缺陷水平降低的正型抗蚀剂组合物以及形成抗蚀剂图案的方法。该组合物和方法提供：包含含有由（α-甲基）羟基苯乙烯衍生的结构单元（a1）的树脂组分（A）的正性抗蚀剂组合物，由下述通式（1）表示，和结构单元（ a2），其中组分（A）在2.38重量％的TMAH（氢氧化四甲铵）水溶液中的溶解度在100至1000埃/秒的范围内，如以及形成使用这种组合物的抗蚀剂图案的方法。（其中在通式（1）和（2）中，R表示氢原子或甲基）

3. 发明申请

US20060003260A1 Chemical amplified positive photo resist composition and method for forming resist pattern 有权
标题翻译：化学放大正光致抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US20060003260A1
公开(公告)日：2006-01-05
申请号：US10528617
申请日：2004-05-20
申请人： Yusuke Nakagawa , Shinichi Hidesaka , Kenji Maruyama , Satoshi Shimatani , Masahiro Masujima , Kazuyuki Nitta
发明人： Yusuke Nakagawa , Shinichi Hidesaka , Kenji Maruyama , Satoshi Shimatani , Masahiro Masujima , Kazuyuki Nitta
IPC分类号： G03C1/73
CPC分类号： G03F7/0392 , G03F7/168 , Y10S430/106
摘要： To provide a chemical amplification type positive photoresist composition, which has high sensitivity, high heat resistance and high resolution (high contrast) and is capable of suppressing an undulation phenomenon, and a method for formation of a resist pattern, a chemical amplification type positive photoresist composition comprising (A) an alkali soluble resin comprising a hydroxystyrene constituent unit (a1) and a styrene constituent unit (a2), (B) a crosslinking agent, (C) a photo acid generator, and an organic solvent is prepared and a resist pattern is formed by using the same.
摘要翻译：为了提供具有高灵敏度，高耐热性和高分辨率（高对比度）并且能够抑制起伏现象的化学放大型正性光致抗蚀剂组合物，以及形成抗蚀剂图案的方法，化学放大型正性光致抗蚀剂制备包含（A）包含羟基苯乙烯构成单元（a1）和苯乙烯构成单元（a2）的碱溶性树脂，（B）交联剂，（C）光酸反应器和有机溶剂的组合物，通过使用它们形成图案。

4. 发明授权

US07150956B2 Chemical amplification type positive resist composition, resist laminated material, resist pattern forming method and method of manufacturing semiconductor device 失效
标题翻译：化学放大型正型抗蚀剂组合物，抗蚀剂层压材料，抗蚀剂图案形成方法和制造半导体器件的方法
公开(公告)号：US07150956B2
公开(公告)日：2006-12-19
申请号：US11028456
申请日：2005-01-03
申请人： Kazuyuki Nitta , Takeyoshi Mimura , Satoshi Shimatani , Waki Okubo , Tatsuya Matsumi
发明人： Kazuyuki Nitta , Takeyoshi Mimura , Satoshi Shimatani , Waki Okubo , Tatsuya Matsumi
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/0392 , G03F7/11 , Y10S430/106
摘要： The present invention provides a resist composition comprising (A) polyhydroxystyrene in which at least a portion of hydrogen atoms of hydroxyl groups are substituted with an acid-dissociable dissolution inhibiting group, and the solubility in an alkali solution of the polyhydroxystyrene increasing when the acid-dissociable dissolution inhibiting group is eliminated by an action of an acid, and (B) a component capable of generating an acid by irradiation with radiation, wherein a retention rate of the acid-dissociable dissolution inhibiting group of the component (A) after a dissociation test using hydrochloric acid is 40% or less, and also provides a chemical amplification type positive resist composition which contains polyhydroxystyrene in which at least a portion of hydrogen atoms of hydroxyl groups are substituted with a lower alkoxy-alkyl group having a straight-chain or branched alkoxy group, and the solubility in an alkali solution of the polyhydroxystyrene increasing when the lower alkoxy-alkyl group is eliminated by an action of an acid, in place of the component (A).
摘要翻译：本发明提供了一种抗蚀剂组合物，其包含（A）聚羟基苯乙烯，其中羟基的至少一部分氢原子被酸解离的溶解抑制基团取代，并且当所述多羟基苯乙烯的碱溶液中的溶解度增加时，通过酸的作用除去可离解的溶解抑制基团，和（B）通过辐射照射产生酸的成分，其中解离后的成分（A）的酸解离溶解抑制基团的保留率使用盐酸的试验为40％以下，并且还提供了含有聚羟基苯乙烯的化学扩增型正性抗蚀剂组合物，其中羟基的至少一部分氢原子被具有直链的低级烷氧基 - 烷基取代，支链烷氧基，并且当聚羟基苯乙烯的碱溶液中的溶解度增加时低级烷氧基 - 烷基通过酸的作用代替组分（A）而被除去。

5. 发明申请

US20050244740A1 Chemically amplified positive photo resist composition and method for forming resist pattern 有权
标题翻译：化学放大的正光致抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US20050244740A1
公开(公告)日：2005-11-03
申请号：US10522036
申请日：2004-05-19
申请人： Kenji Maruyama , Masaki Kurihara , Ken Miyagi , Satoshi Niikura , Satoshi Shimatani , Masahiro Masujima , Kazuyuki Nitta , Toshihiro Yamaguchi , Kousuke Doi
发明人： Kenji Maruyama , Masaki Kurihara , Ken Miyagi , Satoshi Niikura , Satoshi Shimatani , Masahiro Masujima , Kazuyuki Nitta , Toshihiro Yamaguchi , Kousuke Doi
IPC分类号： G03C1/492 , G03F7/039
CPC分类号： G03F7/0392 , Y10S430/106 , Y10S430/12 , Y10S430/122
摘要： The present invention provides a chemical amplification type positive photoresist composition which is excellent in storage stability as a resist solution in a bottle. A novolak resin or a hydroxystyrenic resin is reacted with a crosslinking agent to give a slightly alkali-soluble or alkali-insoluble resin having such a property that solubility in an aqueous alkali solution is enhanced in the presence of an acid, which is then dissolved in an organic solvent, together with (B) a compound generating an acid under irradiation with radiation to obtain a chemical amplification type positive photoresist composition wherein the content of an acid component is 10 ppm or less.
摘要翻译：本发明提供了作为瓶中的抗蚀剂溶液的储存稳定性优异的化学增幅型正性光致抗蚀剂组合物。将酚醛清漆树脂或羟基苯乙烯类树脂与交联剂反应，得到轻微碱溶性或碱不溶性树脂，其具有在酸存在下在碱溶液中的溶解度增强的性质，然后将其溶解于有机溶剂与（B）在辐射照射下产生酸的化合物一起获得化学扩增型正性光致抗蚀剂组合物，其中酸成分的含量为10ppm以下。

6. 发明申请

US20070117045A1 CHEMICAL AMPLIFICATION TYPE POSITIVE PHOTORESIST COMPOSITION AND RESIST PATTERN FORMING METHOD 审中-公开
标题翻译：化学放大型积极光电组合物和电阻形成方法
公开(公告)号：US20070117045A1
公开(公告)日：2007-05-24
申请号：US11622988
申请日：2007-01-12
申请人： Kenji Maruyama , Masaki Kurihara , Ken Miyagi , Satoshi Niikura , Satoshi Shimatani , Masahiro Masujima , Kazuyuki Nitta , Toshihiro Yamaguchi , Kousuke Doi
发明人： Kenji Maruyama , Masaki Kurihara , Ken Miyagi , Satoshi Niikura , Satoshi Shimatani , Masahiro Masujima , Kazuyuki Nitta , Toshihiro Yamaguchi , Kousuke Doi
IPC分类号： G03C1/00
CPC分类号： G03F7/0392 , Y10S430/106 , Y10S430/12 , Y10S430/122
摘要： The present invention provides a chemical amplification type positive photoresist composition which is excellent in storage stability as a resist solution in a bottle A novolak resin or a hydroxystyrenic resin is reacted with a crosslinking agent to give a slightly alkali-soluble or alkali-insoluble resin having such a property that solubility in an aqueous alkali solution is enhanced in the presence of an acid, which is then dissolved in an organic solvent, together with (B) a compound generating an acid under irradiation with radiation to obtain a chemical amplification type positive photoresist composition wherein the content of an acid component is 10 ppm or less.
摘要翻译：本发明提供一种化学放大型正性光致抗蚀剂组合物，其作为瓶中的抗蚀剂溶液具有优异的储存稳定性将酚醛清漆树脂或羟基乙烯基树脂与交联剂反应，得到略微碱溶性或碱不溶性树脂，其具有在碱的存在下，在溶解于有机溶剂中的酸的存在下，与（B）在辐射照射下产生酸的化合物一起溶解在碱溶液中的这种性质得到化学扩增型正性光致抗蚀剂组分，其中酸成分的含量为10ppm以下。

7. 发明申请

US20050112498A1 Chemical amplification type positive resist composition, resist laminated material, resist pattern forming method and method of manufacturing semiconductor device 失效
标题翻译：化学放大型正型抗蚀剂组合物，抗蚀剂层压材料，抗蚀剂图案形成方法和制造半导体器件的方法
公开(公告)号：US20050112498A1
公开(公告)日：2005-05-26
申请号：US11028456
申请日：2005-01-03
申请人： Kazuyuki Nitta , Takeyoshi Mimura , Satoshi Shimatani , Waki Okubo , Tatsuya Matsumi
发明人： Kazuyuki Nitta , Takeyoshi Mimura , Satoshi Shimatani , Waki Okubo , Tatsuya Matsumi
IPC分类号： G03F7/039 , G03F7/11 , G03C1/76
CPC分类号： G03F7/0392 , G03F7/11 , Y10S430/106
摘要： The present invention provides a resist composition comprising (A) polyhydroxystyrene in which at least a portion of hydrogen atoms of hydroxyl groups are substituted with an acid-dissociable dissolution inhibiting group, and the solubility in an alkali solution of the polyhydroxystyrene increasing when the acid-dissociable dissolution inhibiting group is eliminated by an action of an acid, and (B) a component capable of generating an acid by irradiation with radiation, wherein a retention rate of the acid-dissociable dissolution inhibiting group of the component (A) after a dissociation test using hydrochloric acid is 40% or less, and also provides a chemical amplification type positive resist composition which contains polyhydroxystyrene in which at least a portion of hydrogen atoms of hydroxyl groups are substituted with a lower alkoxy-alkyl group having a straight-chain or branched alkoxy group, and the solubility in an alkali solution of the polyhydroxystyrene increasing when the lower alkoxy-alkyl group is eliminated by an action of an acid, in place of the component (A).
摘要翻译：本发明提供了一种抗蚀剂组合物，其包含（A）聚羟基苯乙烯，其中羟基的至少一部分氢原子被酸解离的溶解抑制基团取代，并且当所述多羟基苯乙烯的碱溶液中的溶解度增加时，通过酸的作用除去可离解的溶解抑制基团，和（B）通过辐射照射产生酸的成分，其中解离后的成分（A）的酸解离溶解抑制基团的保留率使用盐酸的试验为40％以下，并且还提供了含有聚羟基苯乙烯的化学扩增型正性抗蚀剂组合物，其中羟基的至少一部分氢原子被具有直链的低级烷氧基 - 烷基取代，支链烷氧基，并且当聚羟基苯乙烯的碱溶液中的溶解度增加时低级烷氧基 - 烷基通过酸的作用代替组分（A）而被除去。

8. 发明申请

US20050037291A1 Method for forming fine resist pattern 审中-公开
标题翻译：形成精细抗蚀剂图案的方法
公开(公告)号：US20050037291A1
公开(公告)日：2005-02-17
申请号：US10497016
申请日：2002-12-02
申请人： Kazuyuki Nitta , Satoshi Shimatani , Masahiro Masujima
发明人： Kazuyuki Nitta , Satoshi Shimatani , Masahiro Masujima
IPC分类号： G03F7/004 , G03F7/027 , G03F7/039 , G03F7/40 , H01L21/027
CPC分类号： G03F7/0392 , G03F7/0045 , G03F7/027 , G03F7/40 , H01L21/0273
摘要： The object is to form a resist pattern to be applicable to a thermal flow process with a small changing amount of the resist pattern size per unit temperature, high uniformity within the plane of the resist hole pattern size obtained and an excellent cross sectional profile. In a resist pattern forming method by subjecting a patterned positive-working resist film provided on a substrate to a thermal flow treatment to effect size reduction, it is characterized in (a) that, as the positive-working resist composition to be used, a positive-working resist composition is used which comprises (A) a resinous ingredient capable of being imparted with increased solubility in alkali by an acid, (B) a compound generating an acid by irradiation with a radiation, (C) a compound having at least two vinyl ether groups per molecule to form crosslinks by reacting with the resinous ingredient (A) under heating and (D) an organic amine compound and (b) that the aforemen-tioned thermal flow treatment is conducted by twice or more of heatings within a temperature range of 100-200° C. wherein the temperature of subsequent heating is not lower than the temperature in the preceding heating.
摘要翻译：本发明的目的是形成抗蚀剂图案，以适用于每单位温度下抗蚀剂图案尺寸的变化量小，在获得的抗蚀孔图案尺寸的平面内的高均匀性和优异的横截面轮廓的热流程。在通过对设置在基板上的图案化正性抗蚀剂膜进行热流动处理以实现尺寸减小的抗蚀剂图案形成方法中，其特征在于：（a）作为所使用的正性抗蚀剂组合物，使用正性抗蚀剂组合物，其包含（A）能够通过酸赋予在碱中增加的溶解度的树脂成分，（B）通过辐射照射产生酸的化合物，（C）至少具有每个分子两个乙烯基醚基团，通过在加热下与树脂成分（A）反应形成交联，和（D）有机胺化合物和（b）上述热流动处理是通过两次或更多次加热在温度范围为100-200℃，其中随后加热的温度不低于先前加热中的温度。

9. 发明授权

US07358028B2 Chemically amplified positive photo resist composition and method for forming resist pattern 有权
标题翻译：化学放大的正光致抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US07358028B2
公开(公告)日：2008-04-15
申请号：US10522036
申请日：2004-05-19
申请人： Kenji Maruyama , Masaki Kurihara , Ken Miyagi , Satoshi Niikura , Satoshi Shimatani , Masahiro Masujima , Kazuyuki Nitta , Toshihiro Yamaguchi , Kousuke Doi
发明人： Kenji Maruyama , Masaki Kurihara , Ken Miyagi , Satoshi Niikura , Satoshi Shimatani , Masahiro Masujima , Kazuyuki Nitta , Toshihiro Yamaguchi , Kousuke Doi
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30 , G03F7/38
CPC分类号： G03F7/0392 , Y10S430/106 , Y10S430/12 , Y10S430/122
摘要： The present invention provides a chemical amplification type positive photoresist composition which is excellent in storage stability as a resist solution in a bottle. A novolak resin or a hydroxystyrenic resin is reacted with a crosslinking agent to give a slightly alkali-soluble or alkali-insoluble resin having such a property that solubility in an aqueous alkali solution is enhanced in the presence of an acid, which is then dissolved in an organic solvent, together with (B) a compound generating an acid under irradiation with radiation to obtain a chemical amplification type positive photoresist composition wherein the content of an acid component is 10 ppm or less.
摘要翻译：本发明提供了作为瓶中的抗蚀剂溶液的储存稳定性优异的化学增幅型正性光致抗蚀剂组合物。将酚醛清漆树脂或羟基苯乙烯类树脂与交联剂反应，得到轻微碱溶性或碱不溶性树脂，其具有在酸存在下在碱溶液中的溶解度增强的性质，然后将其溶解于有机溶剂与（B）在辐射照射下产生酸的化合物一起获得化学扩增型正性光致抗蚀剂组合物，其中酸成分的含量为10ppm以下。

10. 发明授权

US07329478B2 Chemical amplified positive photo resist composition and method for forming resist pattern 有权
标题翻译：化学放大正光致抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US07329478B2
公开(公告)日：2008-02-12
申请号：US10528617
申请日：2004-05-20
申请人： Yusuke Nakagawa , Shinichi Hidesaka , Kenji Maruyama , Satoshi Shimatani , Masahiro Masujima , Kazuyuki Nitta
发明人： Yusuke Nakagawa , Shinichi Hidesaka , Kenji Maruyama , Satoshi Shimatani , Masahiro Masujima , Kazuyuki Nitta
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/0392 , G03F7/168 , Y10S430/106
摘要： To provide a chemical amplification type positive photoresist composition, which has high sensitivity, high heat resistance and high resolution (high contrast) and is capable of suppressing an undulation phenomenon, and a method for formation of a resist pattern, a chemical amplification type positive photoresist composition comprising (A) an alkali soluble resin comprising a hydroxystyrene constituent unit (a1) and a styrene constituent unit (a2), (B) a crosslinking agent, (C) a photo acid generator, and an organic solvent is prepared and a resist pattern is formed by using the same.
摘要翻译：为了提供具有高灵敏度，高耐热性和高分辨率（高对比度）并且能够抑制起伏现象的化学放大型正性光致抗蚀剂组合物，以及形成抗蚀剂图案的方法，化学放大型正性光致抗蚀剂制备包含（A）包含羟基苯乙烯构成单元（a1）和苯乙烯构成单元（a2）的碱溶性树脂，（B）交联剂，（C）光酸反应器和有机溶剂的组合物，通过使用它们形成图案。

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