专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US4581579A Optical magnetic-field measuring apparatus having improved temperature characteristics 失效
标题翻译：具有改善的温度特性的光磁场测量装置
公开(公告)号：US4581579A
公开(公告)日：1986-04-08
申请号：US545643
申请日：1983-10-26
申请人： Kazuyuki Nagatsuma , Hiroyoshi Matsumura , Tsuneo Suganuma , Norio Ohta , Keikichi Ando , Yuzuru Hosoe , Yutaka Sugita
发明人： Kazuyuki Nagatsuma , Hiroyoshi Matsumura , Tsuneo Suganuma , Norio Ohta , Keikichi Ando , Yuzuru Hosoe , Yutaka Sugita
IPC分类号： G01R33/032 , G02F1/09 , G01R33/02 , G02B5/30 , G02F1/29 , G02F1/31
CPC分类号： G01R33/0322
摘要： In a magnetic-field measuring apparatus having a Faraday rotation property, a medium having the Faraday rotation property includes at least one magnetic garnet thin film having a composition represented by a general formula of R.sub.3 (Fe.sub.5-x M.sub.x)O.sub.12 (where R is at least one element selected from a group consisting of La, Sm, Lu, Ca and Bi, or at least two elements selected from the group with Y being added thereto, M is at least one element selected from a group consisting of Ga, Ge, Al, Si, Sc, In and Cr, and a range of x is 0.ltoreq.x.ltoreq.1.5), and magnetized in a direction of light transmission, whereby an overall temperature characteristic of a ratio (4.pi.Ms/Ho) of a saturation flux density 4.pi.Ms to a collapse field Ho of a strip domain of the thin film is improved. The magnetic-field measuring apparatus offers a stable measurement of magnetic-field irrespective of a temperature change.
摘要翻译：在具有法拉第旋转特性的磁场测量装置中，具有法拉第旋转特性的介质包括至少一种具有由通式R3（Fe5-xMx）O12表示的组成的磁性石榴石薄膜（其中R至少为选自La，Sm，Lu，Ca和Bi中的一种元素，或选自添加有Y的基团中的至少两种元素，M为选自Ga，Ge，Al中的至少一种元素，Si，Sc，In和Cr，x的范围为0

2. 发明授权

US4604577A Temperature-compensated magnetic field measuring instrument 失效
标题翻译：温度补偿磁场测量仪
公开(公告)号：US4604577A
公开(公告)日：1986-08-05
申请号：US462765
申请日：1983-02-01
申请人： Hiroyoshi Matsumura , Toshio Katsuyama , Norio Ohta , Tsuneo Suganuma , Kazuyuki Nagatsuma , Yutaka Sugita
发明人： Hiroyoshi Matsumura , Toshio Katsuyama , Norio Ohta , Tsuneo Suganuma , Kazuyuki Nagatsuma , Yutaka Sugita
IPC分类号： G01R33/032 , G02F1/00 , G02F1/09 , G01R33/02 , G02B5/30
CPC分类号： G02F1/0036 , G01R33/0322
摘要： A measuring instrument of magnetic field utilizing Faraday rotation is disclosed in which a medium exhibiting Faraday rotation includes at least one thin magnetic garnet film magnetized in a propagation direction of light and having a composition expressed by a general formula R.sub.3-x Q.sub.x (Fe.sub.5-y M.sub.y)O.sub.12 (where R indicates at least one element selected from a group consisting of Y, La, Lu, Ca, Sm and Bi, Q indicates at least one element selected from a group consisting of Gd, Eu, Er, Tm, Tb, Yb, Ho and Dy, M is at least one element selected from a group consisting of Ga, Al, Ge, Si, Sc, Mn, In, V and Cr, the value of x lies in a range expressed by a formula 0.1.ltoreq.x.ltoreq.3.0, and the value of y lies in a range expressed by a formula 0.ltoreq.y.ltoreq.5.0). According to this instrument, stable measured values are obtained independently of temperature variation.
摘要翻译：公开了利用法拉第旋转的磁场测量仪器，其中显示法拉第旋转的介质包括在光传播方向上被磁化并具有通式R3-xQx（Fe5-yMy）表示的组成的至少一个薄磁石榴石薄膜， O12（其中R表示选自Y，La，Lu，Ca，Sm和Bi中的至少一种元素，Q表示选自由Gd，Eu，Er，Tm，Tb，Yb组成的组中的至少一种元素），Ho和Dy，M是选自Ga，Al，Ge，Si，Sc，Mn，In，V和Cr中的至少一种元素，x的值在由式0.1表示的范围内， = x <= 3.0，y的值位于由公式0表示的范围内。根据该仪器，独立于温度变化获得稳定的测量值。

3. 发明授权

US4570064A Optical D.C. electric-field measuring apparatus with optic sensing means exhibiting both electrooptic and photoelectric effects 失效
标题翻译：具有光电感测装置的光学直流电场测量装置具有电光和光电效应
公开(公告)号：US4570064A
公开(公告)日：1986-02-11
申请号：US513314
申请日：1983-07-13
申请人： Kazuyuki Nagatsuma , Hiroyoshi Matsumura , Toshio Katsuyama , Tsuneo Suganuma
发明人： Kazuyuki Nagatsuma , Hiroyoshi Matsumura , Toshio Katsuyama , Tsuneo Suganuma
IPC分类号： G01R29/08 , G01R15/24 , G01R19/00 , G01R29/12 , G01D5/34
CPC分类号： G01R15/242 , G01R29/12
摘要： An electric-field measuring apparatus utilizing electrooptic effect for measuring the intensity of an electric DC field includes a material exhibiting both electrooptic effect and photoelectric effect or both a material exhibiting the electrooptic effect and a material exhibiting the photoelectric effect which material or materials are irradiated with a continuous light ray of a wavelength capable of inducing the electrooptic effect and an intermittently interrupted light ray of a wavelength capable of inducing the photoelectric effect.
摘要翻译：利用电光效应测量电场的强度的电场测量装置包括既具有电光效应又具有光电效应的材料，或具有电光效应的材料和表现出光电效应的材料，该材料或材料被照射能够引起电光效应的波长的连续光线以及能够引起光电效应的波长的间歇性中断的光线。

4. 发明授权

US4737015A Optical waveguide having a silicon oxi-nitride layer 失效
标题翻译：具有硅氧化物层的光波导
公开(公告)号：US4737015A
公开(公告)日：1988-04-12
申请号：US674770
申请日：1984-11-26
申请人： Koji Ishida , Hiroyoshi Matsumura , Kenji Hiruma , Kazuyuki Nagatsuma , Akihito Hongo
发明人： Koji Ishida , Hiroyoshi Matsumura , Kenji Hiruma , Kazuyuki Nagatsuma , Akihito Hongo
IPC分类号： G02B6/00 , G02B6/02 , G02B6/122 , G02B6/13 , G02B6/132
CPC分类号： G02B6/132 , G02B6/122
摘要： An optical waveguide comprising a layer formed on a substrate, having a mixed composition of silicon oxide and silicon nitride and having an arbitrary value of refractive index ranging between those of the silicon oxide and the silicon nitride. The layer of said mixed composition can be formed on the substrate to easily fabricate the optical waveguide of the present invention by conducting a sputtering method employing a Si target and controlling the composition of a sputtering gas composed of a mixture of N.sub.2 and O.sub.2 gases.
摘要翻译：一种光波导，包括形成在基板上的层，其具有氧化硅和氮化硅的混合组成，并且具有范围在氧化硅和氮化硅的折射率之间的任意值。所述混合组合物的层可以形成在基板上，以通过使用Si靶的溅射方法和控制由N 2和O 2气体的混合物组成的溅射气体的组成来容易地制造本发明的光波导。

5. 发明授权

US4631402A Optical electric-field measuring apparatus 失效
标题翻译：光电测量仪
公开(公告)号：US4631402A
公开(公告)日：1986-12-23
申请号：US575783
申请日：1984-02-01
申请人： Kazuyuki Nagatsuma , Kazumasa Takagi , Hiroyoshi Matsumura
发明人： Kazuyuki Nagatsuma , Kazumasa Takagi , Hiroyoshi Matsumura
IPC分类号： G01R15/24 , G01R29/08 , G01R29/12 , G02F1/03 , G01D5/34
CPC分类号： G01R29/0885 , G01R29/12 , G02F1/03
摘要： An apparatus for measuring electric field by making use of electrooptic effect includes an electrooptical crystal having a crystallographically eulytite structure such as Bi.sub.4 Ge.sub.3 O.sub.12, Bi.sub.4 Si.sub.3 O.sub.12 or Bi.sub.4 (Ge, Si).sub.3 O.sub.12 as a material with electrooptic effect. The optical electric-field measuring apparatus has an increased measuring sensitivity and a stabilized temperature characteristic and scarcely disturbs the distribution of electric field to be measured.
摘要翻译：利用电光效应测量电场的装置包括具有结晶学eulytite结构的电光晶体，例如Bi4Ge3O12，Bi4Si3O12或Bi4（Ge，Si）3O12作为具有电光效应的材料。光电测量装置具有增加的测量灵敏度和稳定的温度特性，并且几乎不干扰待测电场的分布。

6. 发明授权

US5488386A Imaging apparatus and operation method of the same 失效
标题翻译：成像装置及其操作方法相同
公开(公告)号：US5488386A
公开(公告)日：1996-01-30
申请号：US160655
申请日：1993-12-02
申请人： Toshio Yamagishi , Masakazu Nanba , Norifumi Egami , Kenkichi Tanioka , Mitsuhiro Kurashige , Kazutaka Tsuji , Yoshiyuki Kaneko , Tatsuo Makishima , Kazuyuki Nagatsuma , Tetsuya Ohshima , Yasushi Nakano
发明人： Toshio Yamagishi , Masakazu Nanba , Norifumi Egami , Kenkichi Tanioka , Mitsuhiro Kurashige , Kazutaka Tsuji , Yoshiyuki Kaneko , Tatsuo Makishima , Kazuyuki Nagatsuma , Tetsuya Ohshima , Yasushi Nakano
IPC分类号： H01J29/04 , H01J29/45 , H01J31/26 , H01J31/38 , H04N5/225 , H04N5/335 , H04N5/355 , H04N5/357 , H04N5/369 , H04N5/378 , G09G3/22
CPC分类号： H01J31/38 , H01J31/26
摘要： A photoconductive target having a transparent electrode layer and a photoconductive layer on a transparent substrate is disposed opposite to a group of integrated electron beam emitters having gate electrodes. A number of the electron emitters are activated to apply electron beams to the photoconductive target and the activated ones of the electron beam emitters are temporally changed over by an electron emitter selector circuit and a gate selector circuit. Signal charge generated and stored in the photoconductive layer is read. A time-series electric signal corresponding to a spatial distribution of the incident light is generated. A thin imaging apparatus suitable for a larger area is thus provided.
摘要翻译：在透明基板上具有透明电极层和光电导层的光导体靶设置成与具有栅电极的一组集成电子束发射体相对。多个电子发射器被激活以将电子束施加到光电导目标上，并且激活的电子束发射器在时间上被电子发射极选择器电路和栅选择器电路切换。读取产生并存储在光电导层中的信号电荷。产生对应于入射光的空间分布的时间序列电信号。因此，提供了适合于较大面积的薄的成像装置。

7. 发明授权

US4816890A Optoelectronic device 失效
标题翻译：光电器件
公开(公告)号：US4816890A
公开(公告)日：1989-03-28
申请号：US915410
申请日：1986-10-06
申请人： Hirobumi Ouchi , Ichiro Fujiwara , Hiroshi Matsuda , Kazuhiro Ito , Kazuyuki Nagatsuma
发明人： Hirobumi Ouchi , Ichiro Fujiwara , Hiroshi Matsuda , Kazuhiro Ito , Kazuyuki Nagatsuma
IPC分类号： H01L31/107 , H01L27/14 , H01L31/00
CPC分类号： H01L31/1075
摘要： An avalanche photodiode including a substrate, a first semiconductor region of a first conductivity type having a relatively large band gap, a second semiconductor region of a second conductivity type having a relatively large band gap, and a third semiconductor region of the first conductivity type having a band gap smaller than the band gap of the first and second semiconductor regions, is disclosed in which, in order to suppress an increase in dark current and to cause the avalanche photodiode to operate on a low voltage, a fourth semiconductor region equal in conductivity type to and larger in impurity concentration than the first semiconductor region is formed in the first semiconductor region at a position below a central portion of a pn junction formed between the first semiconductor region and the second semiconductor region. The avalanche photodiode formed with this structure has low-noise and low operation voltage characteristics.
摘要翻译：一种雪崩光电二极管，包括基板，具有相对较大带隙的第一导电类型的第一半导体区域，具有相对较大带隙的第二导电类型的第二半导体区域，以及具有第一导电类型的第三半导体区域，公开了一种小于第一和第二半导体区域的带隙的带隙，其中为了抑制暗电流的增加并使雪崩光电二极管在低电压下工作，等于导电性的第四半导体区域在形成在第一半导体区域和第二半导体区域之间的pn结的中心部分下方的位置处，在第一半导体区域中形成并且具有比第一半导体区域更大的杂质浓度。用这种结构形成的雪崩光电二极管具有低噪声和低工作电压特性。

8. 发明授权

US5098851A Fabricating a semiconductor photodetector by annealing to smooth the PN junction 失效
标题翻译：通过退火制造半导体光电探测器以平滑PN结
公开(公告)号：US5098851A
公开(公告)日：1992-03-24
申请号：US474336
申请日：1990-02-02
申请人： Kazuhiro Ito , Kazuyuki Nagatsuma , Hiroshi Matsuda , Ichiro Fujiwara
发明人： Kazuhiro Ito , Kazuyuki Nagatsuma , Hiroshi Matsuda , Ichiro Fujiwara
IPC分类号： H01L31/18
CPC分类号： H01L31/184 , H01L31/1844 , H01L31/1864 , Y02E10/544 , Y02P70/521 , Y10S148/167 , Y10S438/965
摘要： A semiconductor photodetector is disclosed which comprises a pn junction formed in a semiconductor substrate and a pair of electrodes for applying a reverse bias to the pn junction, in which at least a part of the junction plane of the pn junction has been metamorphosed by enhanced diffusion. Hence the pn junction from an outer peripheral portion and a central portion is made smooth.
摘要翻译：公开了一种半导体光电检测器，其包括形成在半导体衬底中的pn结和用于向pn结施加反向偏压的一对电极，其中pn结的至少一部分结面已经被增强的扩散变质。因此，使来自外周部和中央部的pn结成为平滑的。

9. 发明授权

US4490641A Three electrode piezoelectric ceramic resonator 失效
标题翻译：三电极压电陶瓷谐振器
公开(公告)号：US4490641A
公开(公告)日：1984-12-25
申请号：US278729
申请日：1981-06-29
申请人： Hiroshi Takeuchi , Shigeru Jyo mura , Kazuyuki Nagatsuma , Mitsutaka Hikita , Yukio Ito , Sakichi Ashida
发明人： Hiroshi Takeuchi , Shigeru Jyo mura , Kazuyuki Nagatsuma , Mitsutaka Hikita , Yukio Ito , Sakichi Ashida
IPC分类号： H03H9/13 , H03H9/17 , H03H9/56 , H01L41/08
CPC分类号： H03H9/562
摘要： The piezoelectric resonator of this invention consists of a piezoelectric ceramic plate which is polarized in the direction of thickness over the entire plate, two split electrodes are formed on one main surface of the piezoelectric ceramic plate, and an electrode is formed on the entire main surface opposed to the above main surface on which are formed the split electrodes. When an operating voltage is supplied to the above two split electrodes, the piezoelectric ceramic plate between the two split electrodes and the other electrode undergoes resonance in a thickness dilatational mode with a phase difference of 180.degree..
摘要翻译：本发明的压电谐振器由在整个板上的厚度方向上极化的压电陶瓷板组成，在压电陶瓷板的一个主表面上形成两个分离电极，并且在整个主表面上形成电极与形成分割电极的上述主表面相对。当向上述两个分割电极提供工作电压时，两个分离电极和另一个电极之间的压电陶瓷板在相位差为180度的厚度膨胀模式下经历谐振。

10. 发明授权

US4333842A Piezoelectric single crystal and surface acoustic wave element employing the same 失效
标题翻译：压电单晶和表面声波元件
公开(公告)号：US4333842A
公开(公告)日：1982-06-08
申请号：US178593
申请日：1980-08-15
申请人： Yukio Ito , Kazuyuki Nagatsuma , Sigeru Jyomura , Sakichi Ashida , Hiroshi Takeuchi
发明人： Yukio Ito , Kazuyuki Nagatsuma , Sigeru Jyomura , Sakichi Ashida , Hiroshi Takeuchi
IPC分类号： H03H9/25 , C30B15/00 , G10K11/36 , H01L41/18 , H01L41/187 , H03H3/08 , C04B35/00
CPC分类号： G10K11/36 , C30B15/00 , C30B29/34 , H01L41/18 , H01L41/1871
摘要： A piezoelectric single crystal which has a composition represented by a general formula (Ba.sub.2-x Sr.sub.x)TiSi.sub.2 O.sub.8, the value x lying within a range of 0.25.ltoreq.x.ltoreq.1.2; and a surface acoustic wave element which is so constructed as to employ surface waves that propagate on a cut plane perpendicular to the Z-axis of the single crystal, or surface waves that propagate in a specified direction on a cut plane containing the X-axis of the single crystal. The piezoelectric single crystal and the surface acoustic wave element employing it have the merits that the electromechanical coupling factor of the surface acoustic waves is great and that the temperature coefficient of delay time of the surface acoustic waves is small.
摘要翻译：具有由通式（Ba2-xSrx）TiSi2O8表示的组成的压电单晶，其值x在0.25≤x≤1.2的范围内; 以及表面声波元件，其被构造成采用在垂直于单晶的Z轴的切割平面上传播的表面波，或者在包含X轴的切割平面上在指定方向上传播的表面波的单晶。使用它的压电单晶和表面声波元件具有表面声波的机电耦合系数大，表面声波的延迟时间的温度系数小的优点。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式