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1. 发明申请

US20100167112A1 LITHIUM ION SECONDARY BATTERY 失效
标题翻译：锂离子二次电池
公开(公告)号：US20100167112A1
公开(公告)日：2010-07-01
申请号：US12600391
申请日：2008-07-18
申请人： Kazuyoshi Honda , Toshitada Sato , Daisuke Suetsugu , Katsumi Kashiwagi , Kunihiko Bessho
发明人： Kazuyoshi Honda , Toshitada Sato , Daisuke Suetsugu , Katsumi Kashiwagi , Kunihiko Bessho
IPC分类号： H01M6/10 , H01M4/58
CPC分类号： H01M10/0525 , H01M4/0421 , H01M4/131 , H01M4/134 , H01M4/1391 , H01M4/1395 , H01M4/386 , H01M4/387 , H01M4/485 , H01M10/446
摘要： A lithium ion secondary battery including: a positive electrode current collector; a positive electrode active material layer that is provided in contact with the positive electrode current collector; a separator layer that is provided on a side of the positive electrode active material layer on which the positive electrode current collector is not provided; a negative electrode active material layer that is provided on a side of the separator layer on which the positive electrode active material layer is not provided, that primarily contains silicon or tin, and that includes a opposing portion opposing the positive electrode active material layer and a non-opposing portion not opposing the positive electrode active material layer, the opposing portion and the non-opposing portion containing lithium produced by a thin film-forming method; and a negative electrode current collector that is provided on a side of the negative electrode active material layer on which the separator layer is not provided. Thereby, deformation of the negative electrode and deterioration in cycle characteristics accompanied by such deformation can be prevented.
摘要翻译： 1.一种锂离子二次电池，包括：正极集电体; 设置为与正极集电体接触的正极活性物质层; 设置在不设置正极集电体的正极活性物质层的一侧的隔离层; 设置在不设置正极活性物质层的隔板层的一侧的负极活性物质层，其主要含有硅或锡，并且包括与正极活性物质层相对的相对部分和不与正极活性物质层相对的非相对部分，相对部分和非相对部分含有通过薄膜形成方法生产的锂; 以及负极集电体，其设置在不设置隔板层的负极活性物质层的一侧。由此，可以防止负极的变形和伴随这种变形的循环特性的劣化。

2. 发明授权

US08486549B2 Lithium ion secondary battery 失效
标题翻译：锂离子二次电池
公开(公告)号：US08486549B2
公开(公告)日：2013-07-16
申请号：US12600391
申请日：2008-07-18
申请人： Kazuyoshi Honda , Toshitada Sato , Daisuke Suetsugu , Katsumi Kashiwagi , Kunihiko Bessho
发明人： Kazuyoshi Honda , Toshitada Sato , Daisuke Suetsugu , Katsumi Kashiwagi , Kunihiko Bessho
IPC分类号： H01M6/10 , H01M4/58
CPC分类号： H01M10/0525 , H01M4/0421 , H01M4/131 , H01M4/134 , H01M4/1391 , H01M4/1395 , H01M4/386 , H01M4/387 , H01M4/485 , H01M10/446
摘要： A lithium ion secondary battery including: a positive electrode current collector; a positive electrode active material layer that is provided in contact with the positive electrode current collector; a separator layer that is provided on a side of the positive electrode active material layer on which the positive electrode current collector is not provided; a negative electrode active material layer that is provided on a side of the separator layer on which the positive electrode active material layer is not provided, that primarily contains silicon or tin, and that includes a opposing portion opposing the positive electrode active material layer and a non-opposing portion not opposing the positive electrode active material layer, the opposing portion and the non-opposing portion containing lithium produced by a thin film-forming method; and a negative electrode current collector that is provided on a side of the negative electrode active material layer on which the separator layer is not provided. Thereby, deformation of the negative electrode and deterioration in cycle characteristics accompanied by such deformation can be prevented.
摘要翻译： 1.一种锂离子二次电池，包括：正极集电体; 设置为与正极集电体接触的正极活性物质层; 设置在不设置正极集电体的正极活性物质层的一侧的隔离层; 设置在不设置正极活性物质层的隔板层的一侧的负极活性物质层，其主要含有硅或锡，并且包括与正极活性物质层相对的相对部分和不与正极活性物质层相对的非相对部分，相对部分和非相对部分含有通过薄膜形成方法生产的锂; 以及负极集电体，其设置在不设置隔板层的负极活性物质层的一侧。由此，可以防止负极的变形和伴随这种变形的循环特性的劣化。

3. 发明申请

US20080199780A1 ELECTROCHEMICAL ELEMENT, METHOD FOR MANUFACTURING ELECTRODE THEREOF, AND LITHIATION TREATMENT METHOD AND LITHIATION TREATMENT APPARATUS 审中-公开
标题翻译：电化学元件，其制造方法及其电极处理方法和放电处理装置
公开(公告)号：US20080199780A1
公开(公告)日：2008-08-21
申请号：US12035190
申请日：2008-02-21
申请人： Hiroshi HAYATA , Toshitada Sato , Kunihiko Bessho , Kazuyoshi Honda
发明人： Hiroshi HAYATA , Toshitada Sato , Kunihiko Bessho , Kazuyoshi Honda
IPC分类号： H01M4/38 , C23C16/06 , C23C16/00
CPC分类号： C23C14/562 , C23C14/226 , C23C14/228 , C23C14/243 , H01M4/0421 , H01M4/139 , H01M4/1391
摘要： A method for manufacturing an electrode for an electrochemical element capable of absorbing and releasing lithium ions includes a lithiation treatment method for compensating an irreversible capacity of the electrode for an electrochemical element. In the lithiation treatment method, lithium is provided to the electrode by allowing a lithium vapor to flow with a movement route of the lithium vapor limited.
摘要翻译：一种用于制造用于吸收和释放锂离子的电化学元件的电极的方法包括用于补偿用于电化学元件的电极的不可逆容量的锂化处理方法。在锂化处理方法中，通过使锂蒸汽以限制锂蒸气的移动路径流动而向电极提供锂。

4. 发明申请

US20100196623A1 FILM FORMING METHOD AND FILM FORMING APPARATUS 审中-公开
标题翻译：薄膜成型方法和薄膜成型装置
公开(公告)号：US20100196623A1
公开(公告)日：2010-08-05
申请号：US12680043
申请日：2008-09-09
申请人： Kazuyoshi Honda , Yuma Kamiyama , Kunihiko Bessho , Tomofumi Yanagi , Yasuharu Shinokawa , Toshitada Sato
发明人： Kazuyoshi Honda , Yuma Kamiyama , Kunihiko Bessho , Tomofumi Yanagi , Yasuharu Shinokawa , Toshitada Sato
IPC分类号： B05D3/06 , B05D3/02 , B05D3/00 , B05C5/04
CPC分类号： C23C14/246 , B22D11/10 , B22D11/143 , C23C14/30 , C23C14/562
摘要： The present invention provides a film forming method and a film forming apparatus each of which is capable of forming films at low cost. The film forming method of the present invention includes the steps of (i) melting a solid material 51 of a thin film to prepare a melted liquid, solidifying the melted liquid 51a to form a rod-shaped body 51b, and pulling out the rod-shaped body 51b, (ii) melting and supplying a part of the rod-shaped body 51b to a melted liquid (evaporation source) 51d, and (iii) using the melted liquid (evaporation source) 51d to form the thin film. The steps (i), (ii), and (iii) are carried out in vacuum.
摘要翻译：本发明提供一种能够以低成本形成膜的成膜方法和成膜装置。本发明的成膜方法包括以下步骤：（i）熔化薄膜的固体材料51以制备熔融液体，使熔融液体51a固化形成杆状体51b，（ii）将棒状体51b的一部分熔融并供给到熔融液体（蒸发源）51d，（iii）使用熔融液（蒸发源）51d来形成薄膜。步骤（i），（ii）和（iii）在真空中进行。

5. 发明申请

US20110111277A1 CURRENT COLLECTOR FOR NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY, ELECTRODE FOR NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY, PRODUCTION METHODS THEREOF, AND NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY 审中-公开
标题翻译：用于非水电解质二次电池的电流收集器，非水电解质二次电池的电极，其生产方法和非水电解质二次电池
公开(公告)号：US20110111277A1
公开(公告)日：2011-05-12
申请号：US13054146
申请日：2009-07-21
申请人： Kunihiko Bessho , Daisuke Suetsugu , Seiichi Kato
发明人： Kunihiko Bessho , Daisuke Suetsugu , Seiichi Kato
IPC分类号： H01M4/70 , H01M4/485 , H01M2/02 , B21D31/00 , H01M10/36 , H01M4/04
CPC分类号： H01M4/70 , H01M4/0404 , H01M4/131 , H01M4/1391 , H01M4/661 , H01M10/052 , H01M10/0587 , Y10T29/49108 , Y10T29/49115
摘要： A current collector includes a metal foil and protrusions formed on one face or both faces of the metal foil in a predetermined arrangement. The protrusions are substantially rhombic and aligned in a zigzag. Also, both end portions of each protrusion in each of two orthogonal axial directions protrude outward. Middle portions between the end portions are recessed inward. When columnar blocks of an active material are formed on the protrusions to form an active material layer, the gaps between the protrusions can be increased at portions where the interval between the protrusions is the smallest. As a result, internal stress of the active material layer created by charge/discharge of the battery can be alleviated, and the battery life can be increased.
摘要翻译：集电器包括以预定布置形成在金属箔的一个面或两个面上的金属箔和突起。突起是基本菱形的并且以锯齿形对准。另外，两个正交轴向的每一个中的每个突起的两个端部向外突出。端部之间的中间向内凹入。当在突起上形成活性材料的柱状块以形成活性材料层时，突起之间的间隔最小的部分可以增加突起之间的间隙。结果，可以减轻由电池的充电/放电产生的活性材料层的内部应力，并且可以提高电池寿命。

6. 发明授权

US08877291B2 Method of manufacturing thin film which suppresses unnecessary scattering and deposition of a source material 有权
标题翻译：制造薄膜的方法，其抑制源材料的不必要的散射和沉积
公开(公告)号：US08877291B2
公开(公告)日：2014-11-04
申请号：US13390633
申请日：2011-06-01
申请人： Kazuyoshi Honda , Kunihiko Bessho , Takashi Shimada
发明人： Kazuyoshi Honda , Kunihiko Bessho , Takashi Shimada
IPC分类号： C23C16/00 , C23C14/56 , C23C14/24 , C23C14/54
CPC分类号： C23C14/562 , C23C14/24 , C23C14/243 , C23C14/54 , H01M4/0423 , H01M4/139
摘要： The present invention provides a thin film manufacturing method which realizes stable, highly-efficient film formation using a nozzle-type evaporation source while avoiding unnecessary scattering and deposition of a film formation material before the start of the film formation. Used is a film forming apparatus including: an evaporation chamber 16; a film forming chamber 17 in which a substrate 21 is provided; an evaporation source 19 holding a film formation material 15 and including an opening surface 14; a moving mechanism 35 configured to cause the evaporation source 19 to move; and a conductance variable structure 34. The film forming chamber 17 and the evaporation chamber 16 are evacuated. In a state where the differential pressure between these chambers can be secured by the conductance variable structure 34, the nonreactive gas is introduced to the evaporation chamber 16 to adjust the pressure in the evaporation chamber 16 to predetermined pressure or more. Thus, the evaporation of the film formation material is suppressed. In the same state as above, the nonreactive gas is introduced to the film forming chamber 17 to adjust the pressure in the film forming chamber 17 to the predetermined pressure or more. The conductance variable structure 34 is activated to cancel the above state. Then, the evaporation source 19 is moved by the moving mechanism 35, so that the opening surface 14 is located close to the substrate 21. The pressure in each chamber is decreased to less than the predetermined pressure. Thus, the suppression of the evaporation of the film formation material is canceled, and the film formation is started.
摘要翻译：本发明提供一种薄膜制造方法，其使用喷嘴型蒸发源实现稳定，高效的成膜，同时避免在成膜开始之前成膜材料的不必要的散射和沉积。使用的成膜装置包括：蒸发室16; 设置有基板21的成膜室17; 保持成膜材料15并包括开口表面14的蒸发源19; 构造成使蒸发源19移动的移动机构35; 和导电可变结构34.成膜室17和蒸发室16被抽真空。在通过电导可变结构34可以确保这些室之间的压差的状态下，将非反应性气体引入蒸发室16，以将蒸发室16中的压力调节至预定压力或更大。因此，抑制了成膜材料的蒸发。在与上述相同的状态下，将非反应性气体引入成膜室17，以将成膜室17中的压力调节至预定压力或更大。电导变量结构34被激活以消除上述状态。然后，蒸发源19被移动机构35移动，使得开口表面14位于靠近基板21的位置。每个室中的压力降低到小于预定压力。因此，抑制成膜材料的蒸发被消除，并且开始成膜。

7. 发明授权

US08865258B2 Method of manufacturing thin film which suppresses unnecessary scattering and deposition of a source material 有权
标题翻译：制造薄膜的方法，其抑制源材料的不必要的散射和沉积
公开(公告)号：US08865258B2
公开(公告)日：2014-10-21
申请号：US13392433
申请日：2011-06-01
申请人： Kazuyoshi Honda , Kunihiko Bessho , Takashi Shimada
发明人： Kazuyoshi Honda , Kunihiko Bessho , Takashi Shimada
IPC分类号： C23C14/00 , C23C14/24 , C23C14/56 , C23C14/54
CPC分类号： C23C14/24 , C23C14/243 , C23C14/542 , C23C14/562 , H01M4/0423 , H01M4/1391 , H01M4/1395
摘要： The present invention provides a thin film manufacturing method which realizes stable, highly-efficient film formation using a nozzle-type evaporation source while avoiding unnecessary scattering and deposition of a film formation material after the termination of the film formation. Used is a film forming apparatus including: an evaporation chamber 16; a film forming chamber 17 in which a substrate 21 is provided; an evaporation source 19 holding a film formation material 15 and including an opening surface 14; a moving mechanism 35 configured to cause the evaporation source 19 to move; and a conductance variable structure 34. The film formation is performed in a state where the opening surface 14 of the evaporation source 19 holding the heated film formation material is located close to the substrate 21 while evacuating the evaporation chamber 16 and the film forming chamber 17 without shutting off communication between the evaporation chamber 16 and the film forming chamber 17 by the conductance variable structure 34. Next, the evaporation of the film formation material is suppressed by introducing a nonreactive gas to the evaporation chamber 16 and the film forming chamber 17 to adjust pressure in each chamber to predetermined pressure or more. Then, the evaporation source 19 is moved by the moving mechanism 35 such that the opening surface 14 is located away from the substrate 21. The conductance variable structure is activated to shut off the communication between these chambers, and the film formation material is cooled while continuously introducing the nonreactive gas to the evaporation chamber 16.
摘要翻译：本发明提供一种薄膜制造方法，其使用喷嘴型蒸发源实现稳定，高效的成膜，同时避免成膜材料终止后不必要的成膜材料的散射和沉积。使用的成膜装置包括：蒸发室16; 设置有基板21的成膜室17; 保持成膜材料15并包括开口表面14的蒸发源19; 构造成使蒸发源19移动的移动机构35; 和导电可变结构34.成膜是在保持加热成膜材料的蒸发源19的开口表面14位于靠近基板21的同时抽空蒸发室16和成膜室17的状态下进行的而不用电导可变结构34关闭蒸发室16和成膜室17之间的连通。接下来，通过向蒸发室16和成膜室17引入非反应性气体来抑制成膜材料的蒸发，将每个室中的压力调节至预定压力或更大。然后，蒸发源19被移动机构35移动，使得开口表面14远离基板21.导电可变结构被激活以切断这些室之间的连通，并且成膜材料被冷却，同时将非反应性气体连续引入蒸发室16。

8. 发明申请

US20120148746A1 METHOD OF MANUFACTURING THIN FILM 有权
标题翻译：制造薄膜的方法
公开(公告)号：US20120148746A1
公开(公告)日：2012-06-14
申请号：US13392433
申请日：2011-06-01
申请人： Kazuyoshi Honda , Kunihiko Bessho , Takashi Shimada
发明人： Kazuyoshi Honda , Kunihiko Bessho , Takashi Shimada
IPC分类号： C23C16/448 , C23C16/455
CPC分类号： C23C14/24 , C23C14/243 , C23C14/542 , C23C14/562 , H01M4/0423 , H01M4/1391 , H01M4/1395
摘要： The present invention provides a thin film manufacturing method which realizes stable, highly-efficient film formation using a nozzle-type evaporation source while avoiding unnecessary scattering and deposition of a film formation material after the termination of the film formation. Used is a film forming apparatus including: an evaporation chamber 16; a film forming chamber 17 in which a substrate 21 is provided; an evaporation source 19 holding a film formation material 15 and including an opening surface 14; a moving mechanism 35 configured to cause the evaporation source 19 to move; and a conductance variable structure 34. The film formation is performed in a state where the opening surface 14 of the evaporation source 19 holding the heated film formation material is located close to the substrate 21 while evacuating the evaporation chamber 16 and the film forming chamber 17 without shutting off communication between the evaporation chamber 16 and the film forming chamber 17 by the conductance variable structure 34. Next, the evaporation of the film formation material is suppressed by introducing a nonreactive gas to the evaporation chamber 16 and the film forming chamber 17 to adjust pressure in each chamber to predetermined pressure or more. Then, the evaporation source 19 is moved by the moving mechanism 35 such that the opening surface 14 is located away from the substrate 21. The conductance variable structure is activated to shut off the communication between these chambers, and the film formation material is cooled while continuously introducing the nonreactive gas to the evaporation chamber 16.
摘要翻译：本发明提供一种薄膜制造方法，其使用喷嘴型蒸发源实现稳定，高效的成膜，同时避免成膜材料终止后不必要的成膜材料的散射和沉积。使用的成膜装置包括：蒸发室16; 设置有基板21的成膜室17; 保持成膜材料15并包括开口表面14的蒸发源19; 构造成使蒸发源19移动的移动机构35; 和导电可变结构34.成膜是在保持加热成膜材料的蒸发源19的开口表面14位于靠近基板21的同时抽空蒸发室16和成膜室17的状态下进行的而不用电导可变结构34关闭蒸发室16和成膜室17之间的连通。接下来，通过向蒸发室16和成膜室17引入非反应性气体来抑制成膜材料的蒸发，将每个室中的压力调节至预定压力或更大。然后，蒸发源19被移动机构35移动，使得开口表面14远离基板21.导电可变结构被激活以切断这些室之间的连通，并且成膜材料被冷却，同时将非反应性气体连续引入蒸发室16。

9. 发明申请

US20090280049A1 PURIFYING METHOD FOR METALLIC SILICON AND MANUFACTURING METHOD OF SILICON INGOT 失效
标题翻译：金属硅的净化方法及其制造方法
公开(公告)号：US20090280049A1
公开(公告)日：2009-11-12
申请号：US12440531
申请日：2008-06-24
申请人： Yuma Kamiyama , Kazuyoshi Honda , Yasuharu Shinokawa , Hiromasa Yagi , Tomofumi Yanagi , Kunihiko Bessho
发明人： Yuma Kamiyama , Kazuyoshi Honda , Yasuharu Shinokawa , Hiromasa Yagi , Tomofumi Yanagi , Kunihiko Bessho
IPC分类号： C01B33/037
CPC分类号： C01B33/037
摘要： In a purifying method for metal grade silicon, metal grade silicon with a silicon concentration not less than 98 wt % and not more than 99.9 wt % is prepared. The metal grade silicon contains aluminum not less than 1000 ppm and not more than 10000 ppm by weight. The metal grade silicon is heated at a temperature not less than 1500° C. and not more than 1600° C. in an inert atmosphere under pressure not less than 100 Pa and not more than 1000 Pa, and maintained at the temperature in the atmosphere for a predetermined period.
摘要翻译：在金属级硅的纯化方法中，制备硅浓度不小于98重量％且不大于99.9重量％的金属级硅。金属级硅含有不小于1000ppm且不大于10000ppm重量的铝。金属级硅在压力不小于100Pa且不大于1000Pa的惰性气氛中在不低于1500℃且不高于1600℃的温度下加热，并保持在大气中的温度预定时间。

10. 发明授权

US08668895B2 Purifying method for metallic silicon and manufacturing method of silicon ingot 失效
标题翻译：金属硅的净化方法及硅锭的制造方法
公开(公告)号：US08668895B2
公开(公告)日：2014-03-11
申请号：US12440531
申请日：2008-06-24
申请人： Yuma Kamiyama , Kazuyoshi Honda , Yasuharu Shinokawa , Hiromasa Yagi , Tomofumi Yanagi , Kunihiko Bessho
发明人： Yuma Kamiyama , Kazuyoshi Honda , Yasuharu Shinokawa , Hiromasa Yagi , Tomofumi Yanagi , Kunihiko Bessho
IPC分类号： C01B33/037
CPC分类号： C01B33/037
摘要： In a purifying method for metal grade silicon, metal grade silicon with a silicon concentration not less than 98 wt % and not more than 99.9 wt % is prepared. The metal grade silicon contains aluminum not less than 1000 ppm and not more than 10000 ppm by weight. The metal grade silicon is heated at a temperature not less than 1500° C. and not more than 1600° C. in an inert atmosphere under pressure not less than 100 Pa and not more than 1000 Pa, and maintained at the temperature in the atmosphere for a predetermined period.
摘要翻译：在金属级硅的纯化方法中，制备硅浓度不小于98重量％且不大于99.9重量％的金属级硅。金属级硅含有不小于1000ppm且不大于10000ppm重量的铝。金属级硅在压力不小于100Pa且不大于1000Pa的惰性气氛中在不低于1500℃且不高于1600℃的温度下加热，并保持在大气中的温度预定时间。

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