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1. 发明授权

US6134424A High-frequency power amplifier and mobile communication device using same 失效
标题翻译：高频功率放大器和移动通信设备使用相同
公开(公告)号：US6134424A
公开(公告)日：2000-10-17
申请号：US943160
申请日：1997-10-03
申请人： Kazuya Nishihori , Yoshiaki Kitaura , Mayumi Morizuka , Atsushi Kameyama , Masami Nagaoka , Hirotsugu Wakimoto , Tadahiro Sasaki
发明人： Kazuya Nishihori , Yoshiaki Kitaura , Mayumi Morizuka , Atsushi Kameyama , Masami Nagaoka , Hirotsugu Wakimoto , Tadahiro Sasaki
IPC分类号： H03F3/60 , H01L29/08 , H01Q1/24 , H01Q11/12 , H01Q23/00 , H03F1/30 , H03F3/193 , H04B1/04 , H04B7/26 , H01L31/112
CPC分类号： H03F1/306 , H01L29/0891 , H01Q1/242 , H01Q11/12 , H01Q23/00 , H03F3/1935 , H03F2200/294 , H03F2200/372
摘要： A MESFET of a GaAs semiconductor device having a p-pocket LDD structure is used for a high-frequency power amplifier of a mobile communication device, in order to decrease current consumption and to increase the continuous operating time of a battery. The high-frequency power amplifier is provided with a gate-bias adjusting feedback element between the drain and gate of the MESFET. Thus, even if there is a great difference between the filled and terminated potentials of the discharge voltage of the battery for supplying electric power to the amplifier, electric power can be supplied near the terminated potential for a long time, so that the mobile communication device can be continuously used for a long time.
摘要翻译：具有p口LDD结构的GaAs半导体器件的MESFET用于移动通信设备的高频功率放大器，以便降低电流消耗并增加电池的连续工作时间。高频功率放大器在MESFET的漏极和栅极之间设有栅极偏置调整反馈元件。因此，即使在向放大器供电的电池的放电电压的充满电位和终止电位之间存在很大差异的情况下，也可以在终止电位附近长时间地供给电力，使得移动通信装置可以连续使用很长时间。

2. 发明授权

US5273937A Metal semiconductor device and method for producing the same 失效
标题翻译：金属半导体器件及其制造方法
公开(公告)号：US5273937A
公开(公告)日：1993-12-28
申请号：US774169
申请日：1991-10-15
申请人： Kazuya Nishihori , Tomotoshi Inoue , Kenichi Tomita , Hitoshi Mikami , Masami Nagaoka , Naotaka Uchitomi
发明人： Kazuya Nishihori , Tomotoshi Inoue , Kenichi Tomita , Hitoshi Mikami , Masami Nagaoka , Naotaka Uchitomi
IPC分类号： H01L29/47 , H01L21/283
CPC分类号： H01L29/475
摘要： A metal semiconductor device, in which an electrode is formed on a semiconductor substrate to form a Schottky junction therebetween, and the electrode has an oxide film having a first thickness on its upper surface and a non-oxidized portion having a second thickness from the Schottky junction. A method for producing the metal semiconductor device is also disclosed, in which a conductor layer formed on the semiconductor substrate is oxidized in a gas containing oxygen, and a capless annealing of the semiconductor substrate having the oxidized conductor layer thereon is conducted in an atmosphere containing arsenic.
摘要翻译：一种金属半导体器件，其中电极形成在半导体衬底上以在其间形成肖特基结，并且电极在其上表面具有第一厚度的氧化物膜和具有来自肖特基的第二厚度的非氧化部分交界处还公开了一种制造金属半导体器件的方法，其中形成在半导体衬底上的导体层在含氧气体中被氧化，并且在其上具有氧化的导体层的半导体衬底的无限退火在含有砷。

3. 发明授权

US6118985A High frequency switch device, front end unit and transceiver 失效
标题翻译：高频开关器件，前端单元和收发器
公开(公告)号：US6118985A
公开(公告)日：2000-09-12
申请号：US121939
申请日：1998-07-24
申请人： Katsue Kawakyu , Masami Nagaoka , Atsushi Kameyama
发明人： Katsue Kawakyu , Masami Nagaoka , Atsushi Kameyama
IPC分类号： H01P1/15 , H03H7/46 , H03K17/693 , H04B1/44
CPC分类号： H03K17/693 , H03K17/063 , H04B1/48 , H03K2017/066 , H03K2217/0054 , H03K2217/009
摘要： In order to minimize the chip area and improve the linear characteristics obtained when large signals are inputted, a high frequency switch device comprises first, second and third terminals (3, 4, 6); a first circuit composed of a first FET (11), and a first inductor (21) and a first capacitor (25) both connected with the first FET (11) in parallel to each other, one end of the first circuit being connected to the first terminal (3); and a second circuit composed of a second FET (12), and a second inductor (22) and a second capacitor (26) both connected with the second FET (12) in parallel to each other, one end of the second circuit being connected to the first circuit and the other end of the second circuit being connected to the second terminal (4). Further, the high frequency switch device is characterized in that a first control signal is applied to a gate of the first FET (11) via a resistance (31); a second control signal is applied to a gate of the second FET (12) via a resistance (33); the third terminal (6) is connected to a common junction point of the first and second circuits; and a predetermined potential is applied to the common junction point.
摘要翻译：为了最小化芯片面积并提高在输入大信号时获得的线性特性，高频开关装置包括第一，第二和第三端子（3,4,6）。由第一FET（11）和与第一FET（11）并联连接的第一电感器（21）和第一电容器（25）组成的第一电路，第一电路的一端连接到第一个终端（3）; 以及由第二FET（12）和与第二FET（12）并联连接的第二电感器（22）和第二电容器（26）构成的第二电路，第二电路的一端被连接并且第二电路的另一端连接到第二端子（4）。此外，高频开关装置的特征在于，经由电阻（31）将第一控制信号施加到第一FET（11）的栅极; 第二控制信号经由电阻（33）施加到第二FET（12）的栅极; 第三端子（6）连接到第一和第二电路的公共连接点; 并且将预定电位施加到公共接合点。

4. 发明授权

US6075414A High frequency amplifier having a variable attenuator connected to the base of an amplifier FET 失效
标题翻译：具有连接到放大器FET的基极的可变衰减器的高频放大器
公开(公告)号：US6075414A
公开(公告)日：2000-06-13
申请号：US41765
申请日：1998-03-13
申请人： Masami Nagaoka , Yoshiko Ikeda , Toshiki Seshita , Atsushi Kameyama
发明人： Masami Nagaoka , Yoshiko Ikeda , Toshiki Seshita , Atsushi Kameyama
IPC分类号： H03G3/10 , H03F3/193 , H03G1/00 , H03G3/30
CPC分类号： H03H11/245 , H03G1/007
摘要： The invention provides a high frequency amplifier in which a variable attenuator consisting of a bypass FET, which has a drain connected to a first-stage amplifying FET via a resistor, and a source grounded via a capacitor, is located on a main signal line leading to the gate of the amplifying FET, in order to control the gate potential of a bypass FET using a gain control voltage source, thereby varying the gain of the amplifier.
摘要翻译：本发明提供了一种高频放大器，其中由旁路FET组成的可变衰减器位于主信号线上，该旁路FET具有经由电阻器连接到第一级放大FET的漏极和经由电容器接地的源极到放大FET的栅极，以便使用增益控制电压源来控制旁路FET的栅极电位，从而改变放大器的增益。

5. 发明授权

US5638027A Integrated circuit amplifier 失效
标题翻译：集成电路放大器
公开(公告)号：US5638027A
公开(公告)日：1997-06-10
申请号：US594835
申请日：1996-01-30
申请人： Masami Nagaoka
发明人： Masami Nagaoka
IPC分类号： H03F3/60 , H03F3/19 , H03F3/217
CPC分类号： H03F3/2171
摘要： An integrated circuit includes an amplifier for amplifying input electric power having a predetermined frequency determined depending on an application and a series capacitor connected to an output side of the amplifier and becoming a conductive state with respect to the electric current having the predetermined frequency but an open state with respect to the electric current having a frequency that is an odd multiple of the predetermined frequency. In the integrated circuit, the frequency that is the odd multiple thereof is processed by only the capacitor.
摘要翻译：集成电路包括放大器，用于放大具有根据应用确定的预定频率的输入电力和连接到放大器的输出侧的串联电容器，并且相对于具有预定频率但是断开的电流变为导通状态相对于具有预定频率的奇数倍的频率的电流的状态。在集成电路中，其奇数倍的频率仅由电容器进行处理。

6. 发明授权

US5757235A Metal semiconductor field effect transistor of source-ground type 失效
标题翻译：源极接地型金属半导体场效应晶体管
公开(公告)号：US5757235A
公开(公告)日：1998-05-26
申请号：US618896
申请日：1996-03-20
申请人： Ikuo Fujiwara , Masami Nagaoka , Kenji Ishida
发明人： Ikuo Fujiwara , Masami Nagaoka , Kenji Ishida
IPC分类号： H01L29/812 , H01L21/338 , H03F3/193
CPC分类号： H03F3/1935
摘要： There is provided a semiconductor amplifier including a metal-semiconductor field-effect transistor (MESFET) of a source-ground type, having a threshold voltage of a predetermined value within a range of -0.5V to 0V (more preferably, -0.4V to -0.04V), and driving by a single power supply without applying a bias on a gate of the MESFET. According to the above semiconductor amplifier, very high efficiency can be realized while maintaining a sufficiently high output power.
摘要翻译：提供了一种半导体放大器，其包括源极 - 接地型的金属 - 半导体场效应晶体管（MESFET），其具有在-0.5V至0V的范围内的预定值的阈值电压（更优选地，-0.4V至 -0.04V），并且通过单个电源驱动而不在MESFET的栅极上施加偏压。根据上述半导体放大器，可以在保持足够高的输出功率的同时实现非常高的效率。

7. 发明申请

US20090090867A1 NUCLEAR MEDICAL DIAGNOSIS APPARATUS 审中-公开
标题翻译：核医学诊断设备
公开(公告)号：US20090090867A1
公开(公告)日：2009-04-09
申请号：US11996686
申请日：2007-03-30
申请人： Norihito Yanagita , Masahito Ooike , Masami Nagaoka , Shigeru Kimura , Fusaaki Kozawa
发明人： Norihito Yanagita , Masahito Ooike , Masami Nagaoka , Shigeru Kimura , Fusaaki Kozawa
IPC分类号： G01T1/166 , G01T1/161
CPC分类号： G01T1/1648 , G01T1/1611
摘要： A nuclear medical diagnosis apparatus comprises a nuclear radiation detector for detecting a nuclear radiation generated by a nuclide arranged in a body of a subject, a correcting radiation applying mechanism for directing a correcting radiation generated by a correcting radiation source to the subject so that the correcting radiation passes through the subject to be detected by the nuclear radiation detector, and an orbital mechanism arranged to rotate the correcting radiation applying mechanism to orbit around an body axis of the subject, and having a radiation source container by which the correcting radiation source is contained.
摘要翻译：一种核医学诊断装置包括：核辐射检测器，用于检测由配置在被检体的身体中的核素产生的核辐射;校正放射线施加机构，用于将由校正用辐射源产生的校正辐射引导到被检体，辐射通过被检测体以由核辐射检测器检测，轨道机构设置成使校正辐射施加机构围绕被检体的身体轴线旋转，并具有包含校正辐射源的辐射源容器。

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