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    • 2. 发明授权
    • High frequency switch device, front end unit and transceiver
    • 高频开关器件,前端单元和收发器
    • US6118985A
    • 2000-09-12
    • US121939
    • 1998-07-24
    • Katsue KawakyuMasami NagaokaAtsushi Kameyama
    • Katsue KawakyuMasami NagaokaAtsushi Kameyama
    • H01P1/15H03H7/46H03K17/693H04B1/44
    • H03K17/693H03K17/063H04B1/48H03K2017/066H03K2217/0054H03K2217/009
    • In order to minimize the chip area and improve the linear characteristics obtained when large signals are inputted, a high frequency switch device comprises first, second and third terminals (3, 4, 6); a first circuit composed of a first FET (11), and a first inductor (21) and a first capacitor (25) both connected with the first FET (11) in parallel to each other, one end of the first circuit being connected to the first terminal (3); and a second circuit composed of a second FET (12), and a second inductor (22) and a second capacitor (26) both connected with the second FET (12) in parallel to each other, one end of the second circuit being connected to the first circuit and the other end of the second circuit being connected to the second terminal (4). Further, the high frequency switch device is characterized in that a first control signal is applied to a gate of the first FET (11) via a resistance (31); a second control signal is applied to a gate of the second FET (12) via a resistance (33); the third terminal (6) is connected to a common junction point of the first and second circuits; and a predetermined potential is applied to the common junction point.
    • 为了最小化芯片面积并提高在输入大信号时获得的线性特性,高频开关装置包括第一,第二和第三端子(3,4,6)。 由第一FET(11)和与第一FET(11)并联连接的第一电感器(21)和第一电容器(25)组成的第一电路,第一电路的一端连接到 第一个终端(3); 以及由第二FET(12)和与第二FET(12)并联连接的第二电感器(22)和第二电容器(26)构成的第二电路,第二电路的一端被连接 并且第二电路的另一端连接到第二端子(4)。 此外,高频开关装置的特征在于,经由电阻(31)将第一控制信号施加到第一FET(11)的栅极; 第二控制信号经由电阻(33)施加到第二FET(12)的栅极; 第三端子(6)连接到第一和第二电路的公共连接点; 并且将预定电位施加到公共接合点。