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1. 发明授权

US07139998B2 Photomask designing method, pattern predicting method and computer program product 失效
标题翻译：光掩模设计方法，模式预测方法和计算机程序产品
公开(公告)号：US07139998B2
公开(公告)日：2006-11-21
申请号：US10673427
申请日：2003-09-30
申请人： Kazuya Fukuhara , Tatsuhiko Higashiki , Soichi Inoue
发明人： Kazuya Fukuhara , Tatsuhiko Higashiki , Soichi Inoue
IPC分类号： G06F17/50
CPC分类号： G03F1/70
摘要： A photomask designing method used in a lithography process, the lithography process comprises illuminating light on a photomask and converging the light which has passed through the photomask on a photosensitive substrate via a projection optical system, the photomask designing method comprises acquiring a transmittance characteristic of the projection optical system, the characteristic varing depending on a difference in optical paths of light in the projection optical system, the light passing through the projection optical system, and acquiring mask bias of the photomask by use of the transmittance characteristic of the projection optical system.
摘要翻译：在光刻工艺中使用的光掩模设计方法中，光刻工艺包括在光掩模上照亮光，并通过投影光学系统将已经通过光掩模的光会聚在感光基板上，光掩模设计方法包括获得投影光学系统，根据投影光学系统中的光的光路差异，穿过投影光学系统的光以及通过投影光学系统的透射特性来获取光掩模的掩模偏置的特征变化。

2. 发明授权

US08122385B2 Mask pattern correcting method 有权
标题翻译：掩模图案校正方法
公开(公告)号：US08122385B2
公开(公告)日：2012-02-21
申请号：US12129167
申请日：2008-05-29
申请人： Kazuya Fukuhara , Tatsuhiko Higashiki , Toshiya Kotani , Satoshi Tanaka , Takashi Sato , Akiko Mimotogi , Masaki Satake
发明人： Kazuya Fukuhara , Tatsuhiko Higashiki , Toshiya Kotani , Satoshi Tanaka , Takashi Sato , Akiko Mimotogi , Masaki Satake
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： In a model-based OPC which makes a suitable mask correction for each mask pattern using an optical image intensity simulator, a mask pattern is divided into subregions and the model of optical image intensity simulation is changed according to the contents of the pattern in each subregion. When the minimum dimensions of the mask pattern are smaller than a specific threshold value set near the exposure wavelength, the region is calculated using a high-accuracy model and the other regions are calculated using a high-speed model.
摘要翻译：在基于模型的OPC中，使用光学图像强度模拟器对每个掩模图案进行适当的掩模校正，将掩模图案划分为子区域，并且根据每个子区域中的图案的内容来改变光学图像强度模拟模型。当掩模图案的最小尺寸小于在曝光波长附近设置的特定阈值时，使用高精度模型计算该区域，并且使用高速模型来计算其它区域。

3. 发明申请

US20090004581A1 Exposure apparatus, exposure method and optical proximity correction method 审中-公开
标题翻译：曝光装置，曝光方法和光学邻近校正方法
公开(公告)号：US20090004581A1
公开(公告)日：2009-01-01
申请号：US11907191
申请日：2007-10-10
申请人： Kazuya Fukuhara , Tatsuhiko Higashiki
发明人： Kazuya Fukuhara , Tatsuhiko Higashiki
IPC分类号： G03C5/00 , G03F7/00 , G03B27/72
CPC分类号： G03F7/70441 , G02B5/205 , G03F7/70191 , G03F7/70625
摘要： There is disclosed an exposure apparatus which includes an illumination optical system including a light source which emits illumination light, a mask stage which holds a photomask having a mask pattern thereon to be illuminated with the illumination light, and a light intensity distribution filter arranged on a plane, which plane is positioned in the illumination optical system and is optically in relation of Fourier transform to the mask pattern, the light intensity distribution filter configured to vary a light intensity distribution of the illumination light in a cross section of a bundle of the illumination light.
摘要翻译：公开了一种曝光装置，其包括：照明光学系统，其包括发射照明光的光源;掩模台，其保持具有用照明光照射的掩模图案的光掩模;以及光强度分布滤光器，平面，该平面位于照明光学系统中，并且在光学上与傅立叶变换相关联，该光强度分布滤光器被配置为改变照明束的横截面中的照明光的光强度分布光。

4. 发明申请

US20060001846A1 Exposure system and method for manufacturing semiconductor device 审中-公开
标题翻译：半导体器件制造曝光系统及方法
公开(公告)号：US20060001846A1
公开(公告)日：2006-01-05
申请号：US11170165
申请日：2005-06-30
申请人： Takuya Kono , Tatsuhiko Higashiki , Takashi Sato , Shoji Mimotogi , Soichi Inoue
发明人： Takuya Kono , Tatsuhiko Higashiki , Takashi Sato , Shoji Mimotogi , Soichi Inoue
IPC分类号： G03B27/00
CPC分类号： G03F7/70625
摘要： An exposure system includes a simulator speculating first and second calculated doses to project first and second reference marks onto first and second resist films, respectively, an exposure tool projecting the first reference mark onto the first resist film at test doses to form test resist patterns, a choose module choosing an optimum pattern among the test resist patterns and choosing a first optimum dose used for the optimum pattern, and a dose calculator calculating a second optimum dose for the second reference mark by correcting the first optimum dose based on the first and the second calculated doses.
摘要翻译：曝光系统包括模拟器，分别将第一和第二参考标记分别投影到第一和第二抗蚀剂膜上的第一和第二计算剂量，曝光工具以测试剂量将第一参考标记投影到第一抗蚀剂膜上以形成测试抗蚀图案，选择模块，在测试抗蚀剂图案中选择最佳图案，并选择用于最佳图案的第一最佳剂量;以及剂量计算器，通过基于第一和第二图像校正第一最佳剂量来计算第二参考标记的第二最佳剂量秒计算剂量。

5. 发明授权

US07018932B2 Method for manufacturing a semiconductor device and apparatus for manufacturing a semiconductor device 失效
标题翻译：半导体装置的制造方法以及半导体装置的制造装置
公开(公告)号：US07018932B2
公开(公告)日：2006-03-28
申请号：US10377597
申请日：2003-03-04
申请人： Shinichi Ito , Tatsuhiko Higashiki , Katsuya Okumura , Kenji Kawano , Soichi Inoue
发明人： Shinichi Ito , Tatsuhiko Higashiki , Katsuya Okumura , Kenji Kawano , Soichi Inoue
IPC分类号： H01L21/027 , G03F9/00
CPC分类号： G03F7/70625 , G03F7/70633 , G03F7/70641 , G03F7/70675 , H01J2237/30438
摘要： A method for manufacturing a semiconductor device including, forming a photosensitive-film on a substrate, carrying the substrate on which the photosensitive-film is formed, to an exposure device provided with a mask in which an on-mask-inspection-mark and an on-mask-device-pattern are formed, selectively exposing the photosensitive-film to light to transfer the on-mask-inspection-mark to the photosensitive-film to form a latent-image of the inspection-mark on the photosensitive-film, heating at least that area of the photosensitive-film in which the latent-image of the inspection-mark is formed, measuring the inspection-mark, changing set-values for the exposure device used for the selective exposure, on the basis of result of the measurement so that exposure conditions conform to the set-values, exposing the photosensitive-film on the basis of the changed set-values to transfer the on-mask-device-pattern to the photosensitive-film to form a latent image of the device-pattern on the photosensitive-film, heating an entire surface of the photosensitive-film, and developing the photosensitive-film.
摘要翻译：一种半导体器件的制造方法，其特征在于，在将基板上形成有感光膜的基板上形成感光膜的制造方法，设置在具有掩模检查标记和掩模检查标记的掩模的曝光装置形成掩模装置图案，选择性地将感光膜曝光以将掩模检查标记转印到感光膜上，以在感光膜上形成检查标记的潜像，至少加热其中形成有检查标记的潜像的感光膜的面积，测量检查标记，改变用于选择性曝光的曝光装置的设定值，基于所述测量使得曝光条件符合设定值，基于改变的设定值曝光感光膜以将掩模设备图案转印到感光膜上以形成该设备的潜像 p图案在p 感光膜，加热感光膜的整个表面，并显影感光膜。

6. 发明授权

US08609014B2 Template manufacturing method, semiconductor device manufacturing method and template 有权
标题翻译：模板制造方法，半导体器件制造方法和模板
公开(公告)号：US08609014B2
公开(公告)日：2013-12-17
申请号：US13150961
申请日：2011-06-01
申请人： Tsukasa Azuma , Tatsuhiko Higashiki , Kyoichi Suguro
发明人： Tsukasa Azuma , Tatsuhiko Higashiki , Kyoichi Suguro
IPC分类号： B29C67/20
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： According to one embodiment, a template manufacturing method is a method for manufacturing a template for use in an imprint processing in which a pattern having irregularities are formed on a principal surface, and the pattern is brought into contact with a resist member formed on a substrate to be processed, to transfer the pattern to the resist member, the method including implanting charged particles at least into the bottoms of concave portions of the template.
摘要翻译：根据一个实施例，模板制造方法是用于制造在压印处理中使用的模板的方法，其中在主表面上形成具有凹凸的图案，并且图案与形成在基板上的抗蚀剂部件接触要被处理以将图案转印到抗蚀剂构件上，该方法包括将带电粒子至少注入到模板的凹部的底部中。

7. 发明授权

US07630052B2 Exposure processing system, exposure processing method and method for manufacturing a semiconductor device 失效
标题翻译：曝光处理系统，曝光处理方法以及半导体装置的制造方法
公开(公告)号：US07630052B2
公开(公告)日：2009-12-08
申请号：US11024322
申请日：2004-12-29
申请人： Takuya Kono , Nobuhiro Komine , Tatsuhiko Higashiki , Shoichi Harakawa , Makato Ikeda
发明人： Takuya Kono , Nobuhiro Komine , Tatsuhiko Higashiki , Shoichi Harakawa , Makato Ikeda
IPC分类号： G03B27/32 , G03B27/54 , G03D5/00 , G03C5/00 , H01L21/00
CPC分类号： H01L21/67253
摘要： An exposure processing system comprises an exposure apparatus to expose a resist on a wafer, a heating apparatus comprising heating apparatus units, the heating apparatus heating the exposed resist by a heating apparatus unit in the heating apparatus units, a developing apparatus comprising developing apparatus units, the developing apparatus developing the exposed and heated resist by a developing apparatus unit in the developing apparatus units, and a control apparatus to control the exposure apparatus by using correction data so that a wafer on process object being exposed, the correction data being data for correcting a dimensional dispersion of a resist pattern caused by a pair of heating apparatus unit and developing apparatus unit used for the wafer on the process object, the pair of heating and developing apparatus unit comprising a heating and developing apparatus unit in the heating and developing apparatus used for the wafer on the process object.
摘要翻译：曝光处理系统包括：曝光装置，用于在晶片上曝光抗蚀剂，加热装置包括加热装置单元，加热装置通过加热装置单元中的加热装置加热曝光的抗蚀剂;显影装置，包括显影装置单元，显影装置通过显影装置单元中的显影装置单元显影曝光和加热的抗蚀剂;以及控制装置，通过使用校正数据来控制曝光装置，使得处理对象被曝光的晶片，校正数据是用于校正的数据由一对加热装置单元和用于处理对象上的晶片的显影装置单元引起的抗蚀剂图案的尺寸分散，所述一对加热显影装置单元包括使用的加热和显影装置中的加热和显影装置单元用于处理对象上的晶圆。

8. 发明申请

US20070096764A1 Immersion exposure apparatus and method of manufacturing semiconductor device 审中-公开
标题翻译：浸渍曝光装置及半导体装置的制造方法
公开(公告)号：US20070096764A1
公开(公告)日：2007-05-03
申请号：US11586527
申请日：2006-10-26
申请人： Takuya Kono , Tatsuhiko Higashiki
发明人： Takuya Kono , Tatsuhiko Higashiki
IPC分类号： G01R31/26
CPC分类号： G03F7/70341
摘要： An immersion exposure apparatus includes a substrate holding unit which holds a substrate to be exposed, a projection lens provided above the substrate holding unit to supply exposure light to the substrate held on the substrate holding unit, a liquid supply unit which supplies a liquid to an area between the substrate held on the substrate holding unit and the projection lens, and a structural unit which surrounds the substrate holding unit and which is configured to supply an interposer to an area between the structural unit and the substrate held on the substrate holding unit.
摘要翻译：浸渍曝光装置包括：保持要曝光的基板的基板保持单元;设置在基板保持单元上方的投影透镜，用于向保持在基板保持单元上的基板提供曝光光;液体供应单元，保持在基板保持单元上的基板与投影透镜之间的区域以及围绕基板保持单元的结构单元，其构造成将中介层提供给保持在基板保持单元上的结构单元和基板之间的区域。

9. 发明授权

US06479201B2 Optical exposure apparatus of scanning exposure system and its exposing method 失效
标题翻译：扫描曝光系统的曝光装置及其曝光方法
公开(公告)号：US06479201B2
公开(公告)日：2002-11-12
申请号：US09866737
申请日：2001-05-30
申请人： Tatsuhiko Higashiki
发明人： Tatsuhiko Higashiki
IPC分类号： G03F900
CPC分类号： G03F9/7026 , G03F7/70358 , G03F9/7003 , G03F9/7011 , G03F9/7034
摘要： In an optical exposure apparatus of a scan-exposure system, scan-exposure is preliminarily executed before an actual scan-exposure, and a reticle position measuring device measures a positional change of a reticle in the upper and lower direction with the movement of a reticle stage to a scanning direction. Then, a calculation circuit obtains correction data for an offset based on the measuring value to be stored in a memory. Thereafter, correction data stored in the memory is sequentially supplied to a feedback controlling circuit at an actual scan-exposure time. Also, a measuring value of the position of a wafer in a Z-axial direction with the movement of the wafer stage to the scanning direction, relatively moving with the reticle stage, is supplied to the feedback controlling circuit from a wafer position measuring device. The feedback controlling circuit controls a wafer Z-axial driving mechanism such that the position of the wafer in the Z-axial direction is offset by a positional change of the reticle in upper and lower directions. Thereby, correcting a shift of a projection image from a focal position at an exposure surface on the wafer due to deformation (curve and tilt) of the reticle and the upper and lower movement.
摘要翻译：在扫描曝光系统的光学曝光装置中，在实际的扫描曝光之前预先执行扫描曝光，并且光罩位置测量装置通过标线的移动来测量上模和下方向上的标线的位置变化阶段到扫描方向。然后，计算电路基于要存储在存储器中的测量值获得偏移的校正数据。此后，存储在存储器中的校正数据以实际扫描曝光时间顺序地提供给反馈控制电路。此外，通过晶片载台与扫描方向的移动相对于标线片载台移动的Z轴方向的晶片位置的测量值从晶片位置测量装置提供给反馈控制电路。反馈控制电路控制晶片Z轴驱动机构，使得晶片在Z轴方向上的位置被上模和下方的标线的位置变化偏移。由此，由于掩模版的变形（曲线和倾斜）以及上下运动，校正投影图像从晶片上的曝光表面的焦点位置的偏移。

10. 发明授权

US08174669B2 Liquid immersion optical tool, method for cleaning liquid immersion optical tool, liquid immersion exposure method and method for manufacturing semiconductor device 失效
标题翻译：液浸式光学工具，液浸式光学工具的清洗方法，液浸式曝光方法及半导体装置的制造方法
公开(公告)号：US08174669B2
公开(公告)日：2012-05-08
申请号：US12510009
申请日：2009-07-27
申请人： Tatsuhiko Higashiki , Hiroshi Tomita
发明人： Tatsuhiko Higashiki , Hiroshi Tomita
IPC分类号： G03B27/52 , G03B27/42
CPC分类号： G02B27/0006 , G03F7/70341 , G03F7/70925
摘要： There is disclosed is a liquid immersion optical tool, which comprises a light source, an optical lens system, a stage which moves an object base on which an object is to be placed, a head comprising a liquid immersion medium fluid supply device and a liquid immersion medium fluid discharge device to provide a layer of liquid immersion medium fluid between the optical lens system and the object, a fence which limits a region of the layer of liquid immersion medium fluid, and a cleaning device which cleans a portion having been contacted with the liquid immersion medium fluid by means of a cleaning solution.
摘要翻译：公开了一种液浸光学工具，其包括光源，光学透镜系统，移动待放置物体的物体基座的台，包括浸液介质流体供应装置的头部和液体浸没介质流体排出装置，以在光学透镜系统和物体之间提供液浸介质流体层，限制液浸介质流体层的区域的栅栏，以及清洁与已经接触的部分的清洁装置液体介质流体通过清洗溶液。

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