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    • 3. 发明授权
    • Dry barrel finishing machine
    • 干桶整理机
    • US5476415A
    • 1995-12-19
    • US141267
    • 1993-10-22
    • Kazutoshi NishimuraYoshinori KohketsuTakao Ishida
    • Kazutoshi NishimuraYoshinori KohketsuTakao Ishida
    • B24B31/108B24B31/12B24B31/00
    • B24B31/12B24B31/108
    • An improved dry barrel finishing machine is described, in which a mass consisting of media and workpieces is flowed in the barrel of the machine for abrasive finishing of the workpieces and in which air suction is used to remove dust resulting from the finishing operation and to cool the barrel and the mass. The mass is flowed by rotation of the barrel by a motor or through the vibration of the barrel by a driving mechanism. Air inlets and outlets are provided in the barrel. An air suction device draws air through the barrel and around the workpieces and media during the finishing operation. The drawn out air picks up dust and media particles resulting from the abrasive finishing operation and cools the media and the barrel.
    • 描述了一种改进的干燥桶整理机,其中由介质和工件组成的组合物在机器的机筒中流动,用于工件的研磨抛光,并且其中使用空气抽吸来去除由精加工操作引起的灰尘并且冷却 桶和质量。 质量通过电动机的筒的旋转或通过驱动机构的筒的振动而流动。 枪管内设有进气口和出气口。 吸气装置在整理操作期间通过筒体和周围的工件和介质吸入空气。 抽出的空气拾取磨料整理操作产生的灰尘和介质颗粒,并冷却介质和桶。
    • 5. 发明授权
    • Semiconductor device and method of manufacturing the same
    • 半导体装置及其制造方法
    • US06921718B2
    • 2005-07-26
    • US10408258
    • 2003-04-08
    • Naoto AndohTakao IshidaKenji Hosogi
    • Naoto AndohTakao IshidaKenji Hosogi
    • H01L23/52H01L21/3205H01L21/768H01L21/311
    • H01L21/76898
    • A semiconductor device includes a semiconductor substrate and an electrode disposed on a major surface of the semiconductor substrate. A via hole is formed on a center of the electrode so as to open from a surface of the electrode to a place under the surface of the semiconductor substrate. A via-hole foundation electrode for inhibiting diffusion from a metal layer is formed inside the via hole and on the surface of the electrode, a via-hole electrode is formed on the surface of the via-hole foundation electrode. A back via hole is formed on the back of the semiconductor substrate opposite to the major surface thereof, and opened from the back of the semiconductor substrate to the via-hole electrode. A back via-hole electrode is formed on the back of the semiconductor substrate including the inside of the back via hole.
    • 半导体器件包括半导体衬底和设置在半导体衬底的主表面上的电极。 在电极的中心形成通孔,从电极的表面向半导体衬底的表面下方的位置开口。 在通孔内形成有用于抑制从金属层扩散的通孔基础电极,在电极表面上,在通孔基础电极的表面上形成通孔电极。 在半导体衬底的与其主表面相对的背面上形成背部通孔,并且从半导体衬底的背面开口到通孔电极。 背部通孔电极形成在包括背部通孔内侧的半导体衬底的背面上。
    • 8. 发明授权
    • High electron mobility transistor including asymmetrical carrier supply
layers sandwiching a channel layer
    • 高电子迁移率晶体管包括夹着沟道层的非对称载流子供应层
    • US5739558A
    • 1998-04-14
    • US786210
    • 1997-01-21
    • Takao IshidaNaohito Yoshida
    • Takao IshidaNaohito Yoshida
    • H01L29/78H01L21/338H01L29/778H01L29/812H01L31/0328H01L31/0336
    • H01L29/7785
    • A field effect transistor includes a semi-insulating semiconductor substrate; a buffer layer disposed on the substrate and having a high resistance; a first semiconductor layer disposed on the buffer layer and having a relatively high concentration of a dopant impurity; a second semiconductor layer disposed on the first semiconductor layer and having a relatively low concentration of a dopant impurity; a third semiconductor layer disposed on the second semiconductor layer and having a relatively high concentration of a dopant impurity; a fourth semiconductor layer disposed on the third semiconductor layer; and a gate electrode, a source electrode, and a drain electrode disposed on the fourth semiconductor layer wherein the electron affinity of the second semiconductor layer is larger than that of the first and third semiconductor layers, and the difference between the electron affinities of the first and second semiconductor layers proximate their junction is larger than the difference between the electron affinities of the second and third semiconductor layers proximate their junction. The linearity of an output signal with respect to an input signal is improved so that the field effect transistor has improved distortion characteristics and reduced noise on adjacent lines in frequency multiplexed communication.
    • 场效应晶体管包括半绝缘半导体衬底; 缓冲层,其设置在所述基板上并具有高电阻; 设置在所述缓冲层上并且具有相对高浓度的掺杂剂杂质的第一半导体层; 第二半导体层,其设置在所述第一半导体层上并且具有相对低的掺杂剂杂质浓度; 第三半导体层,设置在所述第二半导体层上并且具有相对高的掺杂剂杂质浓度; 设置在所述第三半导体层上的第四半导体层; 以及设置在第四半导体层上的栅电极,源电极和漏极,其中第二半导体层的电子亲和力大于第一和第三半导体层的电子亲和力,并且第一和第二半导体层的电子亲和力之间的差异 并且靠近其结的第二半导体层大于靠近其结的第二和第三半导体层的电子亲和力之间的差异。 改善了输出信号相对于输入信号的线性,使得场效应晶体管具有改善的频率复用通信中相邻线路上的失真特性和降低的噪声。
    • 9. 发明授权
    • Optical deflector
    • 光学偏转器
    • US4607908A
    • 1986-08-26
    • US735984
    • 1985-05-20
    • Takao IshidaYoshitsugu Nakatomi
    • Takao IshidaYoshitsugu Nakatomi
    • F16C32/04G02B26/10G02B26/12
    • F16C39/063F16C17/026G02B26/121F16C2370/22
    • In an optical deflector of a polygonal mirror type, a rotating shaft is supported by a pair of journal bearings of a herringbone dynamic pressure type and a magnetic thrust bearing. The magnetic thrust bearing comprises first and second annular magnets. The first annular magnet is coaxially fixed to the shaft and has a first magnetic pole arrangement on its outer surface. The second annular magnet is fixed to a housing, and has its inner surface opposed to the outer surface of the first magnet and magnetized with a pole arrangement different from the pole arrangement of the first magnet, so that the first and second magnet attract one another to suspend the shaft. Ferromagnetic plates are fixed on both upper and lower surfaces of the first and second magnets.
    • 在多面镜型的光学偏转器中,旋转轴由人字动态压力型和磁性推力轴承的一对轴颈轴承支撑。 磁力推力轴承包括第一和第二环形磁体。 第一环形磁体同轴地固定到轴上,并且在其外表面上具有第一磁极布置。 第二环形磁体被固定到壳体,并且其内表面与第一磁体的外表面相对并且用与第一磁体的磁极布置不同的磁极装置进行磁化,使得第一和第二磁体彼此吸引 悬挂轴。 铁磁板固定在第一和第二磁体的上表面和下表面上。