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    • 1. 发明授权
    • Cooling apparatus for cooling an engine
    • 用于冷却发动机的冷却装置
    • US5738048A
    • 1998-04-14
    • US791776
    • 1997-01-29
    • Kazutaka SuzukiYasutoshi YamanakaYoshimitsu InoueHiroyuki Fukunaga
    • Kazutaka SuzukiYasutoshi YamanakaYoshimitsu InoueHiroyuki Fukunaga
    • F01P7/16F16K11/16F01P7/14
    • F01P7/167F01P2023/08F01P2025/04F01P2025/32F01P2070/06
    • According to the present invention, the cooling apparatus is equipped with a thermostat for opening or closing a water passage between a radiator and a water-cooled engine and a cooling water passage switching valve for switching a water introducing passage for introducing the cooling water around a thermosensitive member of the thermostat. When the engine is in a high-load operating condition and when the temperature of the cooling water is equal to or higher than a predetermined temperature, the cooling water immediately after having flowed out of the water-cooled engine flows into around the thermosensitive member of the thermostat by the operation of the cooling water passage switching valve. As a result, the thermostat is operated in response to the temperature of the high temperature cooling water having flowed out of the water-cooled engine, and the set temperature of the cooling water by the thermostat can be shifted to a lower temperature. In this way, it is possible to prevent preferably an excessive rise in the temperature of the cooling water not only when the engine is in a high-load operating condition but also when the engine is in a state of hot soak such as in idling after the vehicle has travelled on an upward slope with a low speed.
    • 根据本发明,冷却装置配备有用于打开或关闭散热器和水冷发动机之间的水通道的恒温器和用于切换用于将冷却水引入周围的冷却水引入的冷却水通道切换阀 恒温器的热敏元件。 当发动机处于高负载运行状态时,当冷却水的温度等于或高于预定温度时,刚刚从水冷发动机流出的冷却水流入水冷发动机的热敏部件周围 恒温器通过冷却水通道切换阀的操作。 结果,恒温器响应于从水冷发动机流出的高温冷却水的温度而工作,并且恒温器的冷却水的设定温度可以转换到较低的温度。 这样,不仅在发动机处于高负荷运转状态的情况下,也可以优选防止冷却水的温度过度升高,而且在发动机处于闷热状态之后, 车辆以低速行驶在向上的斜坡上。
    • 3. 发明授权
    • Internal combustion engine cooling apparatus
    • 内燃机冷却装置
    • US5404842A
    • 1995-04-11
    • US165882
    • 1993-12-14
    • Ryuichi MatsushiroToshihiko IgashiraHiroyuki FukunagaYasutoshi Yamanaka
    • Ryuichi MatsushiroToshihiko IgashiraHiroyuki FukunagaYasutoshi Yamanaka
    • F01P7/16F01P7/02
    • F01P7/167F01P2025/62F01P2070/06
    • A cooling apparatus for cooling an internal combustion engine having a coolant passing through the engine is provided. A heat exchanger performs a heat-energy exchange and a heat exchanger bypass passage prevents part of the coolant flowing out from the engine from flowing into the heat exchanger. A coolant combination device forms a mix of coolant which flows in a passage bypassing a thermostat with coolant which flows in a passage through the thermostat, while a flow rate ratio adjusting valve continuously adjusts the ratio of the flow rate of the part of the coolant which bypasses the thermostat to the part of the coolant which passes through the thermostat in accordance with a temperature of the coolant. Accordingly, the higher the temperature is, the larger the ratio is. Moreover, the temperature is controlled in accordance with a load of the engine so that the larger the load is, the higher the temperature is.
    • 提供一种用于冷却通过发动机的冷却剂的内燃机的冷却装置。 热交换器执行热能交换,并且热交换器旁路通道防止从发动机流出的部分冷却剂流入热交换器。 冷却剂组合装置形成冷却剂的混合物,其在绕过恒温器的通道中流动,其中冷却剂在通过恒温器的通道中流动,而流量比调节阀连续地调节冷却剂部分的流量比 将恒温器绕过根据冷却剂的温度通过恒温器的冷却剂部分。 因此,温度越高,比例越大。 此外,根据发动机的负载来控制温度,使得负载越大温度越高。
    • 5. 发明申请
    • Method of manufacturing nonvolatile semiconductor storage device
    • 制造非易失性半导体存储装置的方法
    • US20050164453A1
    • 2005-07-28
    • US10761223
    • 2004-01-22
    • Hiroyuki Fukunaga
    • Hiroyuki Fukunaga
    • H01L21/28H01L21/336
    • H01L29/66825H01L21/28273
    • In a method of manufacturing a nonvolatile semiconductor storage device, an element isolation region (12 in FIG. 1) is formed in a semiconductor substrate (11), a tunnel oxide film (13) and a polysilicon layer to become a floating gate (14) later are successively formed on the resulting semiconductor substrate, and nitrogen ions are thereafter implanted into the front surface of the polysilicon layer so as to stay in only this front surface. The polysilicon layer is patterned to form the floating gate (14), and this floating gate (14) is thermally oxidized to form an inter-gate insulating film (15). Since the thermal oxidation is suppressed by the nitrogen ions, the inter-gate insulating film (15) can be made thicker at the side surfaces of the floating gate (14) than at the front surface thereof. Thus, the inter-gate insulating film (15) at the edge part of the floating gate (14) can be formed as designed, so that the nonvolatile semiconductor storage device is free from bad influence on its electrical programming and erasing and is capable of retaining charges for a long time.
    • 在制造非易失性半导体存储装置的方法中,元件隔离区域(图1中的12)形成在半导体衬底(11)中,隧道氧化物膜(13)和多晶硅层成为浮栅(14) )随后在所得到的半导体衬底上依次形成,然后将氮离子注入到多晶硅层的前表面中,仅留在该前表面。 图案化多晶硅层以形成浮置栅极(14),并且该浮置栅极(14)被热氧化以形成栅极间绝缘膜(15)。 由于通过氮离子抑制热氧化,所以可以使栅极间绝缘膜(15)在浮动栅极(14)的侧表面比在其前表面处更厚。 因此,浮置栅极(14)的边缘部分处的栅极间绝缘膜(15)可以按照设计形成,使得非易失性半导体存储装置对其电编程和擦除没有不良影响,并且能够 长期保留费用。
    • 6. 发明授权
    • Method of manufacturing nonvolatile semiconductor storage device
    • 制造非易失性半导体存储装置的方法
    • US07329577B2
    • 2008-02-12
    • US10761223
    • 2004-01-22
    • Hiroyuki Fukunaga
    • Hiroyuki Fukunaga
    • H01L21/336
    • H01L29/66825H01L21/28273
    • In a method of manufacturing a nonvolatile semiconductor storage device, an element isolation region is formed in a semiconductor substrate, a tunnel oxide film and a polysilicon layer are successively formed on the semiconductor substrate, and nitrogen ions are thereafter implanted into the front surface of the polysilicon layer so as to stay in the front surface only. The polysilicon layer is patterned to form a floating gate, which is then thermally oxidized to form an inter-gate insulating film. Since thermal oxidation is suppressed by nitrogen ions, the inter-gate insulating film is thicker at the side surfaces of the floating gate than at the front surface. The inter-gate insulating film at the edge of the floating gate can be formed as designed, so that the storage device is free from bad influence during electrical programming and erasing, and can retain charge longer.
    • 在制造非易失性半导体存储装置的方法中,在半导体衬底中形成元件隔离区,在半导体衬底上依次形成隧道氧化物膜和多晶硅层,然后将氮离子注入到 多晶硅层只能留在前表面。 将多晶硅层图案化以形成浮栅,然后将其热氧化以形成栅间绝缘膜。 由于氮氧离子抑制了热氧化,因此栅极间绝缘膜在浮动栅极的侧表面处比在前表面处更厚。 浮栅边缘的栅极间绝缘膜可以按照设计形成,使得存储装置在电气编程和擦除过程中没有不良影响,并且可以更长时间地保持电荷。