会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Avalanche photo diode
    • 雪崩光电二极管
    • US4383266A
    • 1983-05-10
    • US187744
    • 1980-09-16
    • Kazuo SakaiYuichi MatsushimaShigeyuki AkibaTakaya Yamamoto
    • Kazuo SakaiYuichi MatsushimaShigeyuki AkibaTakaya Yamamoto
    • H01L31/107H01L29/90
    • H01L31/1075
    • An avalanche photo diode provided with a guard ring around a photo detecting region having a pn junction, in which semiconductor layers of the photo detecting region having a pn junction, different in conductivity type from a semiconductor of the guard ring, are composed of a second semiconductor layer formed in contact with a first semiconductor layer forming the pn junction of the photo detecting region and of the same conductivity type as the semiconductor of the guard ring, and a third semiconductor layer formed in contact with the second semiconductor layer and having a larger band gap than the second semiconductor layer, and in which the tip end of the guard ring is formed to extend down into the third semiconductor layer. An avalanche photo diode can be formed to be provided with a uniformly thick, first semiconductor layer forming a photo detecting region and a second semiconductor layer forming a first pn junction between it and the first semiconductor layer, in which third and fourth semiconductor layers of the same composition as each other, respectively having larger band gaps than those of the first and second semiconductor layers, are provided to form therebetween a second pn junction which extends from the first pn junction to surround the peripheral portion of the first semiconductor layer.
    • 一种雪崩光电二极管,其在具有pn结的光检测区域周围设置有保护环,其中具有pn结的光检测区域的半导体层与导电类型不同于保护环的半导体,由第二 形成为与形成光检测区域的pn结并且具有与保护环的半导体相同的导电类型的第一半导体层形成的半导体层,以及形成为与第二半导体层接触并具有较大的第三半导体层的第三半导体层 带隙比第二半导体层,并且其中保护环的尖端形成为向下延伸到第三半导体层。 可以形成雪崩光电二极管,以形成均匀厚的形成光检测区域的第一半导体层和在其与第一半导体层之间形成第一pn结的第二半导体层,其中第三半导体层 提供分别具有比第一和第二半导体层的带隙大的带隙的彼此相同的组成,以形成从第一pn结延伸到围绕第一半导体层的周边部分的第二pn结。
    • 9. 发明授权
    • Semiconductor integrated circuit
    • 半导体集成电路
    • US07583215B2
    • 2009-09-01
    • US12013855
    • 2008-01-14
    • Takaya YamamotoTatsuji MatsuuraMasumi KasaharaHideo NakaneJunya KudoYoshitaka Jingu
    • Takaya YamamotoTatsuji MatsuuraMasumi KasaharaHideo NakaneJunya KudoYoshitaka Jingu
    • H03M3/00
    • H03M3/406H03M3/43H03M3/454
    • The A/D converter converting an analog input signal into a digital output signal is constructed with a band pass ΔΣ modulator. The band pass ΔΣ modulator includes: a resonator showing a band-pass characteristic at a predetermined frequency and an attenuation characteristic at another frequency; a quantizer; and a local D/A converter. A signal of difference between the analog input signal and a local analog signal of the local D/A converter is supplied to the resonator. The A/D converter further includes an adder for supplying the analog input signal to an input of the quantizer. In addition, signal transmission circuits for reducing the influence of spike noise of the quantizer on the input to the resonator are connected between an input of the adder and an input of resonator selectively. The A/D converter constructed with the band pass ΔΣ modulator is improved in S/N ratio.
    • 将模拟输入信号转换为数字输出信号的A / D转换器由带通DeltaSigma调制器构成。 带通DeltaSigma调制器包括:表示预定频率的带通特性的谐振器和另一频率处的衰减特性; 量化器 和本地D / A转换器。 模拟输入信号和本地D / A转换器的本地模拟信号之间的信号被提供给谐振器。 A / D转换器还包括用于将模拟输入信号提供给量化器的输入的加法器。 此外,用于减小量化器的尖峰噪声对谐振器的输入的影响的信号传输电路被选择性连接在加法器的输入和谐振器的输入之间。 用带通DeltaSigma调制器构成的A / D转换器的S / N比提高了。