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1. 发明授权

US09059347B2 Photoelectric conversion device and manufacturing method thereof 有权
标题翻译：光电转换装置及其制造方法
公开(公告)号：US09059347B2
公开(公告)日：2015-06-16
申请号：US13159579
申请日：2011-06-14
申请人： Kazuo Nishi , Takashi Hirose , Naoto Kusumoto
发明人： Kazuo Nishi , Takashi Hirose , Naoto Kusumoto
IPC分类号： H01L31/06 , H01L31/0352 , H01L31/0376 , H01L31/0368 , H01L31/0392 , H01L31/18 , H01L31/20 , H01L31/0465
CPC分类号： H01L31/03762 , H01L31/03682 , H01L31/03685 , H01L31/03921 , H01L31/0465 , H01L31/1816 , H01L31/1872 , H01L31/202 , Y02E10/545 , Y02E10/546 , Y02E10/548 , Y02P70/521
摘要： A photoelectric conversion device having a high electric generating capacity at low illuminance, in which a semiconductor layer is appropriately separated and short circuit of a side surface portion of a cell is prevented. The photoelectric conversion device includes an isolation groove formed between one first electrode and the other first electrode that is adjacent to the one first electrode; a stack including a first semiconductor layer having one conductivity type over the first electrode, a second semiconductor layer formed using an intrinsic semiconductor, and a third semiconductor layer having a conductivity type opposite to the one conductivity type; and a connection electrode connecting one first electrode and a second electrode that is in contact with a third semiconductor layer included in a stack formed over the other first electrode that is adjacent to the one first electrode. A side surface portion of the second semiconductor layer is not crystallized.
摘要翻译：具有低照度的高发电量的光电转换装置，其中半导体层被适当地分离并且防止了电池的侧表面部分的短路。光电转换装置包括形成在与第一电极相邻的一个第一电极和另一个第一电极之间的隔离槽; 包括在第一电极上具有一种导电类型的第一半导体层的堆叠，使用本征半导体形成的第二半导体层和具有与一种导电类型相反的导电类型的第三半导体层; 以及连接电极，其连接与包含在与所述一个第一电极相邻的另一个第一电极上形成的堆叠中的第三半导体层接触的第一电极和第二电极。第二半导体层的侧表面部分不结晶。

2. 发明申请

US20110303272A1 Photoelectric Conversion Device and Manufacturing Method Thereof 审中-公开
标题翻译：光电转换装置及其制造方法
公开(公告)号：US20110303272A1
公开(公告)日：2011-12-15
申请号：US13154990
申请日：2011-06-07
申请人： Kazuo Nishi , Takashi Hirose , Fumito Isaka , Naoto Kusumoto
发明人： Kazuo Nishi , Takashi Hirose , Fumito Isaka , Naoto Kusumoto
IPC分类号： H01L31/075 , H01L31/0264
CPC分类号： H01L31/18 , H01L31/046 , H01L31/0463 , H01L31/0465 , H01L31/075 , Y02E10/548
摘要： An object is to provide a photoelectric conversion device in which defects are suppressed as much as possible by filling a separation process region of a semiconductor film with an insulating resin. A photoelectric conversion device includes a first conductive layer formed over a substrate; first to third semiconductor layers formed over the first conductive layer; a second conductive layer formed over the third semiconductor layer; a first separation groove for separating the first conductive layer and the first to third semiconductor layers into a plurality of pieces; a second separation groove for separating the first to third semiconductor layers into a plurality of pieces; and a third separation groove for separating the second conductive layer into a plurality of pieces. An insulating resin is filled in a structural defect that exists in at least one of the first to third semiconductor layers, and in the first separation groove.
摘要翻译：本发明的目的是提供一种通过用绝缘树脂填充半导体膜的分离工艺区域尽可能地抑制缺陷的光电转换装置。光电转换装置包括形成在基板上的第一导电层; 形成在第一导电层上的第一至第三半导体层; 形成在所述第三半导体层上的第二导电层; 第一分离槽，用于将第一导电层和第一至第三半导体层分离成多个片; 第二分离槽，用于将第一至第三半导体层分离成多个片; 以及第三分离槽，用于将第二导电层分离成多个片。绝缘树脂填充在存在于第一至第三半导体层中的至少一个和第一分离槽中的结构缺陷中。

3. 发明授权

US08481370B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08481370B2
公开(公告)日：2013-07-09
申请号：US11498164
申请日：2006-08-03
申请人： Kazuo Nishi , Hiroki Adachi , Naoto Kusumoto , Yuusuke Sugawara , Hidekazu Takahashi , Daiki Yamada , Yoshikazu Hiura
发明人： Kazuo Nishi , Hiroki Adachi , Naoto Kusumoto , Yuusuke Sugawara , Hidekazu Takahashi , Daiki Yamada , Yoshikazu Hiura
IPC分类号： H01L21/00
CPC分类号： H01L31/0203 , H01L23/49805 , H01L24/29 , H01L24/32 , H01L24/83 , H01L2224/2929 , H01L2224/293 , H01L2224/83851 , H01L2924/01078 , H01L2924/01079 , H01L2924/07811 , H01L2924/09701 , H01L2924/12036 , H01L2924/12042 , H01L2924/14 , H01L2924/3512 , H01L2924/00 , H01L2924/00014
摘要： The present invention provides a semiconductor device having a structure that can be mounted on a wiring substrate, as for the semiconductor device formed over a thin film-thickness substrate, a film-shaped substrate, or a sheet-like substrate. In addition, the present invention provides a method for manufacturing a semiconductor device that is capable of raising a reliability of mounting on a wiring substrate. One feature of the present invention is to bond a semiconductor element formed on a substrate having isolation to a member that a conductive film is formed via a medium having an anisotropic conductivity.
摘要翻译：本发明提供一种半导体器件，其具有能够安装在布线基板上的结构，对于形成在薄膜基板，薄膜状基板或片状基板上的半导体器件。另外，本发明提供一种能够提高安装在布线基板上的可靠性的半导体装置的制造方法。本发明的一个特征是通过具有各向异性导电性的介质将形成在具有隔离衬底的半导体元件与形成有导电膜的构件接合。

4. 发明授权

US08415664B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08415664B2
公开(公告)日：2013-04-09
申请号：US13271272
申请日：2011-10-12
申请人： Tatsuya Arao , Daiki Yamada , Hidekazu Takahashi , Naoto Kusumoto , Kazuo Nishi , Yuusuke Sugawara , Hironobu Takahashi
发明人： Tatsuya Arao , Daiki Yamada , Hidekazu Takahashi , Naoto Kusumoto , Kazuo Nishi , Yuusuke Sugawara , Hironobu Takahashi
IPC分类号： H01L31/0232
CPC分类号： H01L27/14632 , H01L27/14621 , H01L27/14623 , H01L27/14625 , H01L27/1464 , H01L27/14643 , H01L27/14687 , H01L27/14689 , H01L27/14692
摘要： Techniques are provided for obtaining a photoelectric conversion device having a favorable spectral sensitivity characteristic and reduced variation in output current without a contamination substance mixed into a photoelectric conversion layer or a transistor, and for obtaining a highly reliable semiconductor device including a photoelectric conversion device. A semiconductor device may include, over an insulating surface, a first electrode; a second electrode; a color filter between the first electrode and the second electrode; an overcoat layer covering the color filter; and a photoelectric conversion layer over the overcoat layer, where one end portion of the photoelectric conversion layer is in contact with the first electrode, and where an end portion of the color filter lies inside the other end portion of the photoelectric conversion layer.
摘要翻译：提供了用于获得具有良好的光谱灵敏度特性和减少的输出电流变化的光电转换装置的技术，而没有混入光电转换层或晶体管中的污染物质，并且用于获得包括光电转换装置的高度可靠的半导体装置。半导体器件可以在绝缘表面上包括第一电极; 第二电极; 在第一电极和第二电极之间的滤色器; 覆盖滤色器的外涂层; 以及在所述外涂层上的光电转换层，其中所述光电转换层的一个端部与所述第一电极接触，并且所述滤色器的端部位于所述光电转换层的另一端部的内部。

5. 发明授权

US08258512B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08258512B2
公开(公告)日：2012-09-04
申请号：US12752388
申请日：2010-04-01
申请人： Kazuo Nishi , Junya Maruyama , Naoto Kusumoto , Yuusuke Sugawara
发明人： Kazuo Nishi , Junya Maruyama , Naoto Kusumoto , Yuusuke Sugawara
IPC分类号： H01L29/04
CPC分类号： H01L27/14665 , H01L27/14632 , H01L27/14634 , H01L27/14636 , H01L27/1469 , H01L27/14692
摘要： An object of the present invention to provide a semiconductor device manufactured in short time by performing the step of forming the thin film transistor and the step of forming the photoelectric conversion layer in parallel, and to provide a manufacturing process thereof. According to the present invention, a semiconductor device is manufactured in such a way that a thin film transistor is formed over a first substrate, a photoelectric conversion element is formed over a second substrate, and the thin film transistor and the photoelectric conversion element are connected electrically by sandwiching a conductive layer between the first and second substrates opposed to each other so that the thin film transistor and the photoelectric conversion element are located between the first and second substrates. Thus, a method for manufacturing a semiconductor device which suppresses the increase in the number of steps and which increases the throughput can be provided.
摘要翻译：本发明的目的在于提供一种通过进行薄膜晶体管的形成工序和并联形成光电转换层的工序，在短时间内制造的半导体器件，并提供其制造工艺。根据本发明，制造半导体器件，使得在第一衬底上形成薄膜晶体管，在第二衬底上形成光电转换元件，并且连接薄膜晶体管和光电转换元件通过将导电层夹在彼此相对的第一和第二基板之间，使得薄膜晶体管和光电转换元件位于第一和第二基板之间。因此，可以提供一种制造半导体器件的方法，该方法抑制步骤数量的增加并增加通过量。

6. 发明授权

US08207589B2 Photoelectric conversion device and electronic device, and method for manufacturing photoelectric conversion device 有权
标题翻译：光电转换装置和电子装置以及光电转换装置的制造方法
公开(公告)号：US08207589B2
公开(公告)日：2012-06-26
申请号：US12068849
申请日：2008-02-12
申请人： Naoto Kusumoto , Kazuo Nishi , Yuusuke Sugawara
发明人： Naoto Kusumoto , Kazuo Nishi , Yuusuke Sugawara
IPC分类号： H01L27/146
CPC分类号： H01L31/147 , H01L27/12 , H01L27/1214 , H01L31/153 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2924/00
摘要： A photoelectric conversion device includes: a first substrate of which end portions are cut off so as to slope or with a groove shape; a photodiode and an amplifier circuit over the first substrate; a first electrode electrically connected to the photodiode and provided over one end portion of the first substrate; a second electrode electrically connected to the amplifier circuit and provided over an another end portion of the first substrate; and a second substrate having third and fourth electrodes thereon. The first and second electrodes are attached to the third and fourth electrodes, respectively, with a conductive material provided not only at the surfaces of the first, second, third, and fourth electrodes facing each other but also at the side surfaces of the first and second electrodes to increase the adhesiveness between a photoelectric conversion device and a member on which the photoelectric conversion device is mounted.
摘要翻译：一种光电转换装置，包括：第一基板，其端部被切割成倾斜或具有凹槽形状; 在所述第一衬底上的光电二极管和放大器电路; 电连接到所述光电二极管并且设置在所述第一基板的一个端部上的第一电极; 电连接到所述放大器电路并且设置在所述第一基板的另一端部上的第二电极; 以及在其上具有第三和第四电极的第二基板。第一电极和第二电极分别被附接到第三和第四电极，导电材料不仅设置在第一，第二，第三和第四电极的彼此面对，而且在第一和第二电极的第一和第二电极的侧表面处第二电极，以增加光电转换装置与安装有光电转换装置的部件之间的粘合性。

7. 发明授权

US08053816B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08053816B2
公开(公告)日：2011-11-08
申请号：US11681638
申请日：2007-03-02
申请人： Tatsuya Arao , Daiki Yamada , Hidekazu Takahashi , Naoto Kusumoto , Kazuo Nishi , Yuusuke Sugawara , Hironobu Takahashi
发明人： Tatsuya Arao , Daiki Yamada , Hidekazu Takahashi , Naoto Kusumoto , Kazuo Nishi , Yuusuke Sugawara , Hironobu Takahashi
IPC分类号： H01L27/148
CPC分类号： H01L27/14632 , H01L27/14621 , H01L27/14623 , H01L27/14625 , H01L27/1464 , H01L27/14643 , H01L27/14687 , H01L27/14689 , H01L27/14692
摘要： It is an object of the present invention to obtain a photoelectric conversion device having a favorable spectral sensitivity characteristic and no variation in output current without such a contamination substance mixed into a photoelectric conversion layer or a transistor. Further, it is another object of the present invention to obtain a highly reliable semiconductor device in a semiconductor device having such a photoelectric conversion device. The present invention relates to a semiconductor device including, over an insulating surface, a first electrode; a second electrode; a color filter between the first electrode and the second electrode; an overcoat layer covering the color filter; and a photoelectric conversion layer having a p-type semiconductor layer, an i-type semiconductor layer, and an n-type semiconductor layer, over the overcoat layer, where one end portion of the photoelectric conversion layer is in contact with the first electrode, and where an end portion of the color filter lies inside the other end portion of the photoelectric conversion layer.
摘要翻译：本发明的目的是获得具有良好的光谱灵敏度特性的光电转换装置，并且没有混入光电转换层或晶体管中的污染物质的输出电流的变化。此外，本发明的另一个目的是在具有这种光电转换装置的半导体器件中获得高度可靠的半导体器件。本发明涉及一种在绝缘表面上包括第一电极的半导体器件; 第二电极; 在第一电极和第二电极之间的滤色器; 覆盖滤色器的外涂层; 以及具有p型半导体层，i型半导体层和n型半导体层的光电转换层，其中光电转换层的一个端部与第一电极接触，并且其中滤色器的端部位于光电转换层的另一端部的内部。

8. 发明授权

US07851278B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07851278B2
公开(公告)日：2010-12-14
申请号：US12000599
申请日：2007-12-14
申请人： Kazuo Nishi , Hiroki Adachi , Junya Maruyama , Naoto Kusumoto , Yuusuke Sugawara , Tomoyuki Aoki , Eiji Sugiyama , Hironobu Takahashi
发明人： Kazuo Nishi , Hiroki Adachi , Junya Maruyama , Naoto Kusumoto , Yuusuke Sugawara , Tomoyuki Aoki , Eiji Sugiyama , Hironobu Takahashi
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L31/0203 , H01L27/1446 , H01L27/14618 , H01L31/048 , H01L2924/0002 , Y02E10/50 , H01L2924/00
摘要： The present invention provides a semiconductor device formed over an insulating substrate, typically a semiconductor device having a structure in which mounting strength to a wiring board can be increased in an optical sensor, a solar battery, or a circuit using a TFT, and which can make it mount on a wiring board with high density, and further a method for manufacturing the same. According to the present invention, in a semiconductor device, a semiconductor element is formed on an insulating substrate, a concave portion is formed on a side face of the semiconductor device, and a conductive film electrically connected to the semiconductor element is formed in the concave portion.
摘要翻译：本发明提供一种半导体器件，其形成在绝缘基板上，通常是半导体器件，其具有可以在光学传感器，太阳能电池或使用TFT的电路中增加布线板的安装强度的结构，并且其可以使其安装在高密度的布线板上，并且还提供其制造方法。根据本发明，在半导体器件中，半导体元件形成在绝缘基板上，在半导体器件的侧面形成有凹部，与半导体元件电连接的导电膜形成在凹部一部分。

9. 发明授权

US07679091B2 Photoelectric conversion element having a semiconductor and semiconductor device using the same 有权
标题翻译：具有半导体的光电转换元件及使用其的半导体器件
公开(公告)号：US07679091B2
公开(公告)日：2010-03-16
申请号：US12078090
申请日：2008-03-27
申请人： Naoto Kusumoto , Kazuo Nishi , Yuusuke Sugawara
发明人： Naoto Kusumoto , Kazuo Nishi , Yuusuke Sugawara
IPC分类号： H01L27/15
CPC分类号： H01L24/16 , H01L24/05 , H01L24/06 , H01L24/11 , H01L24/17 , H01L24/81 , H01L27/12 , H01L27/14618 , H01L27/14643 , H01L31/02005 , H01L2224/0401 , H01L2224/0558 , H01L2224/05639 , H01L2224/05644 , H01L2224/05655 , H01L2224/1147 , H01L2224/16 , H01L2224/8121 , H01L2224/8122 , H01L2224/81815 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/0101 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/0104 , H01L2924/01042 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01054 , H01L2924/0106 , H01L2924/01067 , H01L2924/01068 , H01L2924/0107 , H01L2924/01073 , H01L2924/01074 , H01L2924/01076 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01105 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/05042 , H01L2924/09701 , H01L2924/12043 , H01L2924/15787 , H01L2224/13099 , H01L2924/00015 , H01L2924/00
摘要： A semiconductor device, particularly, a photoelectric conversion element having a semiconductor layer is demonstrated. The photoelectric conversion element of the present invention comprises, over a substrate, a photoelectric conversion layer and first and second electrodes which are electrically connected to the photoelectric conversion layer. The photoelectric conversion element further comprises a wiring board over which a third and fourth electrodes are provided. The characteristic point of the present invention is that a bonding layer, which readily forms an alloy with a conductive material, is formed over the first and second electrodes. This bonding layer improves the bonding strength between the first and third electrodes and the second and fourth electrode, which contributes to the prevention of the connection defect between the substrate and the wiring board and consequentially to high reliability of the photoelectric conversion element.
摘要翻译：证明了半导体器件，特别是具有半导体层的光电转换元件。本发明的光电转换元件在基板上包括光电转换层和电连接到光电转换层的第一和第二电极。光电转换元件还包括配置有第三和第四电极的布线板。本发明的特征在于，在第一和第二电极上形成有与导电材料形成合金的接合层。该接合层改善了第一和第三电极与第二和第四电极之间的接合强度，这有助于防止基板和布线板之间的连接缺陷，从而导致光电转换元件的高可靠性。

10. 发明授权

US07180197B2 Semiconductor device containing stacked semiconductor chips and manufacturing method thereof 有权
标题翻译：含有层叠半导体芯片的半导体装置及其制造方法
公开(公告)号：US07180197B2
公开(公告)日：2007-02-20
申请号：US10951811
申请日：2004-09-29
申请人： Kazuo Nishi , Hiroki Adachi , Naoto Kusumoto , Yuusuke Sugawara , Hidekazu Takahashi , Daiki Yamada , Yoshikazu Hiura
发明人： Kazuo Nishi , Hiroki Adachi , Naoto Kusumoto , Yuusuke Sugawara , Hidekazu Takahashi , Daiki Yamada , Yoshikazu Hiura
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L31/0203 , H01L23/49805 , H01L24/29 , H01L24/32 , H01L24/83 , H01L2224/2929 , H01L2224/293 , H01L2224/83851 , H01L2924/01078 , H01L2924/01079 , H01L2924/07811 , H01L2924/09701 , H01L2924/12036 , H01L2924/12042 , H01L2924/14 , H01L2924/3512 , H01L2924/00 , H01L2924/00014
摘要： The present invention provides a semiconductor device having a structure that can be mounted on a wiring substrate, as for the semiconductor device formed over a thin film-thickness substrate, a film-shaped substrate, or a sheet-like substrate. In addition, the present invention provides a method for manufacturing a semiconductor device that is capable of raising a reliability of mounting on a wiring substrate. One feature of the present invention is to bond a semiconductor element formed on a substrate having isolation to a member that a conductive film is formed via a medium having an anisotropic conductivity.
摘要翻译：本发明提供一种半导体器件，其具有能够安装在布线基板上的结构，对于形成在薄膜基板，薄膜状基板或片状基板上的半导体器件。另外，本发明提供一种能够提高安装在布线基板上的可靠性的半导体装置的制造方法。本发明的一个特征是通过具有各向异性导电性的介质将形成在具有隔离衬底的半导体元件与形成有导电膜的构件接合。

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