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1. 发明授权

US5677637A Logic device using single electron coulomb blockade techniques 失效
标题翻译：使用单电子库仑封锁技术的逻辑器件
公开(公告)号：US5677637A
公开(公告)日：1997-10-14
申请号：US606835
申请日：1996-02-27
申请人： Kazuo Nakazato , Haroon Ahmed , Julian D. White
发明人： Kazuo Nakazato , Haroon Ahmed , Julian D. White
IPC分类号： G01R29/12 , G11C11/404 , G11C11/4091 , G11C11/56 , G11C19/18 , H03K19/08 , H03K19/23 , H03K19/00
CPC分类号： B82Y10/00 , G11C11/404 , G11C11/4091 , G11C11/56 , G11C19/182 , H03K19/08 , G01R29/12 , G11C2216/08 , Y10S977/937
摘要： A memory device includes a memory node (2) to which is connected a tunnel barrier configuration such that the node exhibits first and second quantized memory states for which the level of stored charge is limited by Coulomb Blockade and a surplus or shortfall of a small number of electrons for example ten electrons or even a single electron can be used to represent quantized memory states. A series of the nodes N0-N3 that are interconnected by tunnel barriers D can be arranged as a logic device. Clock waveforms V1-V3 applied to clock lines C1 1-C1 3 selectively alter the probability of charge carriers passing through the tunnel diodes D from node to node. An output device, typically a Coulomb blockade electrometer provides an output logical signal indicative of the logical state of node N3. Arrays of separately addressable memory cells M.sub.mn are also described, that utilize gated multiple tunnel junctions (MTJs) as their barrier configurations. Side gated GaAs MTJ structures formed by selective etching and lithography are described. Also, gate structures which modulate a conductive channel with depletion regions to form multiple tunnel junctions are disclosed.
摘要翻译：存储器装置包括存储器节点（2），其连接有隧道势垒配置，使得节点具有第一和第二量化的存储器状态，存储电荷的级别由库仑阻塞限制，少量或少量的少量的电子，例如十个电子或甚至单个电子可以用于表示量化的记忆状态。通过隧道屏障D互连的一系列节点N0-N3可以被布置为逻辑设备。施加到时钟线C1 1 -C1 3的时钟波形V1-V3选择性地改变从节点到节点通过隧道二极管D的电荷载流子的概率。输出装置（通常是库仑阻塞静电计）提供指示节点N3的逻辑状态的输出逻辑信号。还描述了单独可寻址存储器单元Mmn的阵列，其利用门控多隧道结（MTJ）作为其屏障配置。描述了通过选择性蚀刻和光刻形成的侧栅GaAs MTJ结构。此外，公开了用耗尽区调制导电沟道以形成多个隧道结的栅极结构。

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