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1. 发明授权

US06792656B2 Surface acoustic wave apparatus and manufacturing method therefor 有权
标题翻译：表面声波装置及其制造方法
公开(公告)号：US06792656B2
公开(公告)日：2004-09-21
申请号：US10025901
申请日：2001-12-26
申请人： Kazunobu Shimoe , Shuji Yamato , Takashi Marukawa
发明人： Kazunobu Shimoe , Shuji Yamato , Takashi Marukawa
IPC分类号： H01L4108
CPC分类号： H03H3/08 , H03H9/02897 , H03H9/25 , Y10T29/42 , Y10T29/49128 , Y10T29/49156
摘要： A method for manufacturing a surface acoustic wave apparatus to be mounted via bumps by a flip chip bonding system prevents peeling of electrode pads from the piezoelectric substrate and cracks in the piezoelectric substrate from occurring during the formation of the bumps or at other times during the manufacturing process. In the method of manufacturing a surface acoustic wave apparatus, a first electrode layer of the electrode pad is formed on a piezoelectric substrate by etching, an electrode for a surface acoustic wave element is formed by a lift-off method after the first electrode layer is formed, and thereafter, an electrode film including a second electrode layer of the electrode pad and a wiring electrode is formed.
摘要翻译：制造通过倒装芯片接合系统通过凸块安装的表面声波装置的方法防止电极焊盘从压电基板剥离，并且压电基板中的裂纹在形成凸块期间或在制造过程中的其它时刻发生处理。在表面声波装置的制造方法中，通过蚀刻在压电基板上形成电极焊盘的第一电极层，在第一电极层是第一电极层之后，通过剥离法形成表面声波元件用电极形成，然后形成包括电极焊盘的第二电极层和布线电极的电极膜。

2. 发明授权

US07112913B2 Surface acoustic wave apparatus and manufacturing method therefor 有权
公开(公告)号：US07112913B2
公开(公告)日：2006-09-26
申请号：US10806404
申请日：2004-03-23
申请人： Kazunobu Shimoe , Shuji Yamato , Takashi Marukawa
发明人： Kazunobu Shimoe , Shuji Yamato , Takashi Marukawa
IPC分类号： H01L41/08
CPC分类号： H03H3/08 , H03H9/02897 , H03H9/25 , Y10T29/42 , Y10T29/49128 , Y10T29/49156
摘要： A method for manufacturing a surface acoustic wave apparatus to be mounted via bumps by a flip chip bonding system prevents peeling of electrode pads from the piezoelectric substrate and cracks in the piezoelectric substrate from occurring during the formation of the bumps or at other times during the manufacturing process. In the method of manufacturing a surface acoustic wave apparatus, a first electrode layer of the electrode pad is formed on a piezoelectric substrate by etching, an electrode for a surface acoustic wave element is formed by a lift-off method after the first electrode layer is formed, and thereafter, an electrode film including a second electrode layer of the electrode pad and a wiring electrode is formed.

3. 发明申请

US20050071971A1 Method of producing surface acoustic wave device and the surface acoustic wave device 有权
标题翻译：声表面波器件和声表面波器件的制造方法
公开(公告)号：US20050071971A1
公开(公告)日：2005-04-07
申请号：US10930231
申请日：2004-08-30
申请人： Shuji Yamato
发明人： Shuji Yamato
IPC分类号： H03H3/08 , H03H9/02 , H03H9/15 , H03H9/25 , H04R17/00
CPC分类号： H03H9/6483 , H03H3/08 , H03H9/02818 , Y10T29/42 , Y10T29/49002 , Y10T29/49005
摘要： A method of producing a surface acoustic wave device includes the steps of forming a first electrode film for constituting an interdigital electrode, a wiring electrode, and an electrode pad on the piezoelectric substrate, forming an insulation film on the piezoelectric substrate so as to cover the first electrode film, patterning the insulation film so that the insulation film existing on the portion of the first electrode film onto which a second electrode film is to be laminated is removed, forming the second electrode film on the portion of the first electrode film from which the insulation film has been removed, and bonding a bump onto the second electrode film.
摘要翻译：一种表面声波器件的制造方法包括以下步骤：在压电基片上形成用于构成叉指电极的第一电极膜，布线电极和电极焊盘，在压电基板上形成绝缘膜，以覆盖第一电极膜，图案化绝缘膜，使得存在于第一电极膜上的要被层叠有第二电极膜的部分上的绝缘膜被除去，在第一电极膜的部分上形成第二电极膜，已经去除了绝缘膜，并将凸块接合到第二电极膜上。

4. 发明申请

US20050070332A1 Demultiplexer and communication device 有权
标题翻译：解复用器和通信设备
公开(公告)号：US20050070332A1
公开(公告)日：2005-03-31
申请号：US10917478
申请日：2004-08-13
申请人： Shuji Yamato
发明人： Shuji Yamato
IPC分类号： H03H9/72 , H03H9/05 , H03H9/10 , H03H9/25 , H03H9/58 , H03H9/64 , H03H9/70 , H04B1/50 , H04Q7/20
CPC分类号： H03H9/706 , H03H9/0571 , H03H9/725
摘要： A demultiplexer includes an antenna terminal, a reception filter connected to the antenna terminal, a transmission filter connected in parallel to the reception filter with respect to the antenna terminal and having a pass band center frequency that is different from the reception filter, a common inductance component connected between the ground terminal of the transmission filter and the ground terminal of the reception filter, and inductance components, which are different from the common inductance component, provided between the common inductance component and the reception filter and between the common inductance component and the transmission filter.
摘要翻译：解复用器包括天线端子，连接到天线端子的接收滤波器，与接收滤波器相对于天线端子并联连接并具有与接收滤波器不同的通带中心频率的发送滤波器，公共电感连接在发送滤波器的接地端子和接收滤波器的接地端子之间的分量以及设置在公共电感分量和接收滤波器之间以及公共电感分量与公共电感分量之间的公共电感分量不同的电感分量传输滤波器。

5. 发明授权

US07205700B2 Method of producing surface acoustic wave device and the surface acoustic wave device 有权
标题翻译：声表面波器件和声表面波器件的制造方法
公开(公告)号：US07205700B2
公开(公告)日：2007-04-17
申请号：US10930231
申请日：2004-08-30
申请人： Shuji Yamato
发明人： Shuji Yamato
IPC分类号： H03H9/25
CPC分类号： H03H9/6483 , H03H3/08 , H03H9/02818 , Y10T29/42 , Y10T29/49002 , Y10T29/49005
摘要： A method of producing a surface acoustic wave device includes the steps of forming a first electrode film for constituting an interdigital electrode, a wiring electrode, and an electrode pad on the piezoelectric substrate, forming an insulation film on the piezoelectric substrate so as to cover the first electrode film, patterning the insulation film so that the insulation film existing on the portion of the first electrode film onto which a second electrode film is to be laminated is removed, forming the second electrode film on the portion of the first electrode film from which the insulation film has been removed, and bonding a bump onto the second electrode film.
摘要翻译：一种表面声波器件的制造方法包括以下步骤：在压电基片上形成用于构成叉指电极的第一电极膜，布线电极和电极焊盘，在压电基板上形成绝缘膜，以覆盖第一电极膜，图案化绝缘膜，使得存在于第一电极膜上的要被层叠有第二电极膜的部分上的绝缘膜被除去，在第一电极膜的部分上形成第二电极膜，已经去除了绝缘膜，并将凸块接合到第二电极膜上。

6. 发明授权

US07149494B2 Demultiplexer and communication device 有权
标题翻译：解复用器和通信设备
公开(公告)号：US07149494B2
公开(公告)日：2006-12-12
申请号：US10917478
申请日：2004-08-13
申请人： Shuji Yamato
发明人： Shuji Yamato
IPC分类号： H04B1/26 , H04B1/28 , H04B1/18
CPC分类号： H03H9/706 , H03H9/0571 , H03H9/725
摘要： A demultiplexer includes an antenna terminal, a reception filter connected to the antenna terminal, a transmission filter connected in parallel to the reception filter with respect to the antenna terminal and having a pass band center frequency that is different from the reception filter, a common inductance component connected between the ground terminal of the transmission filter and the ground terminal of the reception filter, and inductance components, which are different from the common inductance component, provided between the common inductance component and the reception filter and between the common inductance component and the transmission filter.
摘要翻译：解复用器包括天线端子，连接到天线端子的接收滤波器，与接收滤波器相对于天线端子并联连接并具有与接收滤波器不同的通带中心频率的发送滤波器，公共电感连接在发送滤波器的接地端子和接收滤波器的接地端子之间的分量以及设置在公共电感分量和接收滤波器之间以及公共电感分量与公共电感分量之间的公共电感分量不同的电感分量传输滤波器。

7. 发明授权

US06557225B2 Method of producing surface acoustic wave device 有权
标题翻译：制造表面声波装置的方法
公开(公告)号：US06557225B2
公开(公告)日：2003-05-06
申请号：US09833396
申请日：2001-04-12
申请人： Toshiaki Takata , Shuji Yamato , Norihiko Takada
发明人： Toshiaki Takata , Shuji Yamato , Norihiko Takada
IPC分类号： H04R1700
CPC分类号： H03H9/6483 , H03H3/10 , H03H9/02921 , H04R7/045 , Y10T29/42 , Y10T29/49004 , Y10T29/49005 , Y10T29/49155 , Y10T29/49156 , Y10T29/49158 , Y10T29/49176
摘要： A method of producing a surface acoustic wave device by use of a flip chip process, includes the steps of forming on a piezoelectric substrate at least one interdigital transducer and a plurality of electrode pads electrically connected to the interdigital transducer, forming bumps on the respective electrode pads, and providing an insulating film at a region other than a region where the bumps are formed.
摘要翻译：一种使用倒装芯片工艺制造表面声波装置的方法包括以下步骤：在压电基板上形成至少一个叉指式换能器和电连接到叉指式换能器的多个电极垫，在相应电极上形成凸块垫，并且在除了形成凸块的区域之外的区域提供绝缘膜。

8. 发明授权

US06404101B1 Surface acoustic wave device 有权
标题翻译：表面声波装置
公开(公告)号：US06404101B1
公开(公告)日：2002-06-11
申请号：US09953720
申请日：2001-09-17
申请人： Norio Taniguchi , Toshiaki Takata , Tatsurou Nagai , Shuji Yamato
发明人： Norio Taniguchi , Toshiaki Takata , Tatsurou Nagai , Shuji Yamato
IPC分类号： H01L4104
CPC分类号： H03H9/6436 , H03H9/0222 , H03H9/14538 , H03H9/25 , H03H9/6483
摘要： A surface acoustic wave device is arranged such that surface acoustic wave energy is trapped substantially perpendicularly to the surface acoustic wave propagation direction. At least one interdigital transducer having a plurality of electrode fingers and first and second bus bar electrodes is located on a piezoelectric substrate on which a surface acoustic wave is excited, and has an anisotropy index &ggr; of less than about −1 in the propagation direction. The electrode fingers each have a film thickness of not less than about 0.04 &lgr; in which &lgr; is the wavelength of the surface acoustic wave. At least a portion of the first and second bus bar electrodes have a thickness that is larger than that of each electrode finger.
摘要翻译：表面声波装置被布置成使得表面声波能量基本上垂直于声表面波传播方向被捕获。具有多个电极指和第一和第二汇流条电极的至少一个叉指换能器位于其上激励表面声波并且在传播方向上具有小于约-1的各向异性指数γ的压电基板上。电极指各自具有不小于约0.04兰姆的膜厚度，其中羔羊是表面声波的波长。第一和第二汇流条电极的至少一部分的厚度大于每个电极指的厚度。

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