专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20130312787A1 ULTRASONIC CLEANING APPARATUS AND ULTRASONIC CLEANING METHOD 有权
标题翻译：超声波清洗装置和超声波清洗方法
公开(公告)号：US20130312787A1
公开(公告)日：2013-11-28
申请号：US13991596
申请日：2012-05-28
申请人： Kazunari Suzuki
发明人： Kazunari Suzuki
IPC分类号： B08B3/12 , H01L21/67
CPC分类号： B08B3/12 , H01L21/02052 , H01L21/02057 , H01L21/67057
摘要： There are provided an ultrasonic cleaning apparatus and an ultrasonic cleaning method capable of suppressing occurrence of damage on a substrate to be cleaned and capable of performing cleaning at a high cleaning level for highly precise substrates and the like used in an electronics industry. Occurrence of damage on the substrate to be cleaned is suppressed by holding an object to be cleaned so as to be positioned out of a region where perpendiculars extend from an oscillating surface of an ultrasonic transducer to a liquid surface (an ultrasonic-irradiated region) under and in the vicinity of the liquid surface of a cleaning solution, exciting a capillary wave on a surface of the cleaning solution by an ultrasonic wave, and separating particulate contamination of the object to be cleaned by an acoustic pressure generated by the capillary wave without irradiating the object to be cleaned directly with the ultrasonic wave.
摘要翻译：提供了一种超声波清洗装置和超声波清洗方法，其能够抑制要清洗的基板上的损坏的发生，并且能够以高清洁水平执行用于电子工业中使用的高精度基板等的清洁。通过保持要清洁的物体以使其位于垂直于超声波换能器的振动面向液面（超声波照射区域）的垂直方向延伸的区域以外，可以抑制被清洗基板上的损伤的发生并且在清洗液的液面附近，通过超声波在清洗液的表面上激发毛细管波，并用毛细管波形产生的声压分离待清洁物体的微粒污染物，而不照射用超声波直接清洗的物体。

2. 发明授权

US08448655B2 Ultrasonic cleaning device 有权
标题翻译：超声波清洗装置
公开(公告)号：US08448655B2
公开(公告)日：2013-05-28
申请号：US12451568
申请日：2009-08-19
申请人： Kazunari Suzuki , Ki Han
发明人： Kazunari Suzuki , Ki Han
IPC分类号： B08B3/12
CPC分类号： H01L21/67057 , B08B3/12 , H01L21/67017 , H01L21/67051 , Y10S134/902
摘要： An ultrasonic cleaning device is provided which can easily cope with an increase in a diameter of a cleaning surface of an object to be cleaned. An ultrasonic cleaning device according to the present invention includes an ultrasonic transducer 13 for providing ultrasonic energy to a propagation liquid 15, an ultrasonic propagation tube 12 for flowing the propagation liquid provided with the ultrasonic energy by the ultrasonic transducer, a holding mechanism disposed below the ultrasonic propagation tube for holding an object to be cleaned 21, and a cleaning liquid supply mechanism for supplying a cleaning liquid to a cleaning surface of the object to be cleaned held by the holding mechanism, and the ultrasonic propagation tube 12 is disposed so that a side surface thereof may contact a liquid film 19 of the cleaning liquid formed on the cleaning surface by supplying the cleaning liquid to the cleaning surface by the cleaning liquid supply mechanism.
摘要翻译：提供一种可以容易地应对待清洁物体的清洁表面的直径增加的超声波清洗装置。根据本发明的超声波清洗装置包括用于向传播液体15提供超声能量的超声波换能器13，用于使由超声波换能器提供超声能量的传播液体流过的超声波传播管12，用于保持待清洁物体21的超声波传播管，以及用于将洗涤液供给到由保持机构保持的待清洁物体的清洁面的清洗液供给机构，超声波传播管12配置成其侧表面可以通过由清洗液供给机构向清洗表面供给清洗液体而与形成在清洁表面上的清洗液体的液膜19接触。

3. 发明授权

US07943861B2 Printed wiring board and method for manufacturing printed wiring board 有权
标题翻译：印刷电路板及制造印刷线路板的方法
公开(公告)号：US07943861B2
公开(公告)日：2011-05-17
申请号：US11576987
申请日：2005-03-15
申请人： Tsutomu Iwai , Yoshihiro Kodera , Shinya Maeda , Hiroyuki Watanabe , Kazunari Suzuki , Kiyotaka Tsukada
发明人： Tsutomu Iwai , Yoshihiro Kodera , Shinya Maeda , Hiroyuki Watanabe , Kazunari Suzuki , Kiyotaka Tsukada
IPC分类号： H05K1/11
CPC分类号： H01L23/49816 , H01L21/4853 , H01L23/498 , H01L24/48 , H01L24/73 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/00014 , H01L2924/01004 , H01L2924/01012 , H01L2924/01019 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/12041 , H01L2924/15311 , H01L2924/19041 , H05K3/244 , H05K3/3463 , H05K3/4644 , Y10T29/49126 , Y10T29/49128 , Y10T29/4913 , Y10T29/49155 , Y10T29/49156 , Y10T29/49165 , H01L2924/00012 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A composite layer composed of an Ni layer 72 and a Pd layer 73 is formed on a solder pad 77U, and a solder 76α on the composite layer is composed of a solder containing no lead. Because a Pd layer (palladium layer) reduces phenomenons such as repellency of the solder, adhesiveness with the solder can be enhanced. Because a Pd layer has a higher degree of rigidity than a gold layer, thermal stress is absorbed into the Pd layer and buffered so as to reduce the degree of transmission of stress to the solder bump, or to the solder layer, by means of thermal stress.
摘要翻译：在焊盘77U上形成由Ni层72和Pd层73构成的复合层，复合层上的焊料76α由不含铅的焊料构成。由于Pd层（钯层）减少诸如焊料排斥性的现象，因此可以提高与焊料的粘合性。由于Pd层比金层具有更高的刚度，因此热应力被吸收到Pd层中并被缓冲，以便通过热量降低对焊料凸块或焊料层的应力传递程度强调。

4. 发明申请

US20100215042A1 ETHERNET LINK AGGREGATION 失效
标题翻译：以太网链路聚合
公开(公告)号：US20100215042A1
公开(公告)日：2010-08-26
申请号：US12393727
申请日：2009-02-26
申请人： Masakazu Sato , Satoshi Nakajima , Kazunari Suzuki
发明人： Masakazu Sato , Satoshi Nakajima , Kazunari Suzuki
IPC分类号： H04L12/56
CPC分类号： H04L45/245 , H04L12/413 , H04L45/745 , H04L49/351 , H04L61/2092 , H04L69/22 , H04W84/18 , Y02D50/30
摘要： A system and method of transmitting data across a link aggregation group, the method comprises: receiving a packet sourced from a client having a MAC header and an IP header at an input port of a first upstream switch for transmission from the first upstream switch along a link aggregation and at least two down stream switches to a server, said MAC header having a Destination MAC address and a Source MAC address, and the IP header having a Source IP address and a Destination IP address; changing the destination MAC address from a down stream destination to another down stream destination; sending the packet through a first link aggregation to a first down stream switch; using a hash calculation for changing the Source MAC address of the packet in the first down stream switch to a new address; sending the packet through a second link aggregation to a second down stream switch having an address; and sending the packet from the second down stream switch to a server having a server address.
摘要翻译：一种通过链路聚合组发送数据的系统和方法，所述方法包括：从第一上游交换机的输入端口接收来自具有MAC报头和IP报头的客户端的分组，以从第一上游交换机沿着链路聚合和至少两个下行切换到服务器，所述MAC报头具有目的地MAC地址和源MAC地址，所述IP报头具有源IP地址和目的地IP地址; 将目的MAC地址从下行目的地改变到另一下行目的地; 通过第一链路聚合将分组发送到第一下行链路交换机; 使用哈希计算来将第一下行切换中的分组的源MAC地址改变为新的地址; 通过第二链路聚合将分组发送到具有地址的第二下行交换机; 并将分组从第二下行交换机发送到具有服务器地址的服务器。

5. 发明授权

US07528014B2 Semiconductor device and method of manufacturing the same 有权
公开(公告)号：US07528014B2
公开(公告)日：2009-05-05
申请号：US11100437
申请日：2005-04-07
申请人： Yoshinori Miyaki , Hiromichi Suzuki , Kazunari Suzuki , Kunihiko Nishi
发明人： Yoshinori Miyaki , Hiromichi Suzuki , Kazunari Suzuki , Kunihiko Nishi
IPC分类号： H01L21/00
CPC分类号： H01L24/32 , H01L23/49503 , H01L23/49513 , H01L23/49541 , H01L23/49582 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/78 , H01L24/83 , H01L2224/29007 , H01L2224/29109 , H01L2224/29111 , H01L2224/29139 , H01L2224/2919 , H01L2224/32014 , H01L2224/32055 , H01L2224/32245 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/48639 , H01L2224/48664 , H01L2224/49171 , H01L2224/73265 , H01L2224/78301 , H01L2224/78983 , H01L2224/8319 , H01L2224/838 , H01L2224/85181 , H01L2224/85439 , H01L2224/85464 , H01L2224/92 , H01L2224/92247 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01015 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2924/01083 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/0134 , H01L2924/014 , H01L2924/0665 , H01L2924/078 , H01L2924/14 , H01L2924/15738 , H01L2924/15747 , H01L2924/1576 , H01L2924/181 , H01L2924/20753 , H01L2924/00014 , H01L2924/00 , H01L2924/01082 , H01L2924/01026 , H01L2924/01049 , H01L2924/00012 , H01L2924/3512
摘要： A manufacturing method of a semiconductor device including preparing a lead frame having a die pad, leads arranged around the die pad and a silver plating layer formed over a first portion of each of the leads, mounting a semiconductor chip over a main surface of the die pad with a rear surface of the chip fixed to the main surface of the die pad, electrically connecting electrodes of the chip with the leads through wires, forming a molding resin sealing the die pad, the first portion, the semiconductor chip, and the wires, and forming a lead-free solder plating layer over a second portion of each of the leads exposed from the molding resin. An area of the die pad is smaller than an area of the chip, and a part of the molding resin contacts with the rear surface of the chip exposed from the die pad.

6. 发明申请

US20060209893A1 Communication relay apparatus, information management system, and control method and program therefor 失效
标题翻译：通信中继装置，信息管理系统及其控制方法及程序
公开(公告)号：US20060209893A1
公开(公告)日：2006-09-21
申请号：US11375619
申请日：2006-03-14
申请人： Masakazu Satoh , Kazunari Suzuki
发明人： Masakazu Satoh , Kazunari Suzuki
IPC分类号： H04L12/56
CPC分类号： H04L47/10 , H04L47/11 , H04L47/2433 , H04L47/30
摘要： A communication relay apparatus, information management system, and control method and program therefor. The communication relay apparatus includes several communication ports, and that includes a communication relay section, a buffer, a control signal transmitting section, a bandwidth information acquiring section, and a transmission interval control section.
摘要翻译：通信中继装置，信息管理系统及其控制方法及程序。通信中继装置包括多个通信端口，包括通信中继部，缓冲器，控制信号发送部，带宽信息获取部，发送间隔控制部。

7. 发明授权

US07015069B2 Method of manufacturing a semiconductor device and a semiconductor device 有权
公开(公告)号：US07015069B2
公开(公告)日：2006-03-21
申请号：US11047660
申请日：2005-02-02
申请人： Noriyuki Takahashi , Masayuki Suzuki , Kouji Tsuchiya , Takao Matsuura , Takanori Hashizume , Masahiro Ichitani , Kazunari Suzuki , Takafumi Nishita , Kenichi Imura , Takashi Miwa
发明人： Noriyuki Takahashi , Masayuki Suzuki , Kouji Tsuchiya , Takao Matsuura , Takanori Hashizume , Masahiro Ichitani , Kazunari Suzuki , Takafumi Nishita , Kenichi Imura , Takashi Miwa
IPC分类号： H01L21/44
CPC分类号： H01L23/564 , H01L21/561 , H01L21/565 , H01L23/3128 , H01L23/49816 , H01L23/49838 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/97 , H01L2223/5442 , H01L2223/54473 , H01L2224/16 , H01L2224/32225 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48228 , H01L2224/73265 , H01L2224/92 , H01L2224/97 , H01L2924/01005 , H01L2924/01006 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01087 , H01L2924/07802 , H01L2924/0781 , H01L2924/14 , H01L2924/1433 , H01L2924/15151 , H01L2924/15311 , H01L2924/181 , H01L2924/20752 , H01L2924/30105 , H01L2924/351 , H01L2224/83 , H01L2224/85 , H01L2924/00014 , H01L2224/92247 , H01L2924/00 , H01L2924/00012
摘要： The back side of a strip substrate with plural semiconductor chips mounted thereon is vacuum-chucked to a lower mold half of a mold, and in this state the plural semiconductor chips are sealed with resin simultaneously to form a seal member. Thereafter, the strip substrate and the seal member are released from the mold and are cut into plural semiconductor devices. The semiconductor devices thus obtained are improved in their mounting reliability.

8. 发明授权

US06803258B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US06803258B2
公开(公告)日：2004-10-12
申请号：US10152727
申请日：2002-05-23
申请人： Fujio Ito , Hiroaki Tanaka , Hiromichi Suzuki , Tokuji Toida , Takafumi Konno , Kunihiro Tsubosaki , Shigeki Tanaka , Kazunari Suzuki , Akihiko Kameoka
发明人： Fujio Ito , Hiroaki Tanaka , Hiromichi Suzuki , Tokuji Toida , Takafumi Konno , Kunihiro Tsubosaki , Shigeki Tanaka , Kazunari Suzuki , Akihiko Kameoka
IPC分类号： H01L2150
CPC分类号： H01L24/32 , H01L23/4334 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L2224/05554 , H01L2224/29007 , H01L2224/32014 , H01L2224/32055 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/484 , H01L2224/48599 , H01L2224/49171 , H01L2224/49431 , H01L2224/49433 , H01L2224/73265 , H01L2224/85385 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01028 , H01L2924/01029 , H01L2924/01047 , H01L2924/01074 , H01L2924/01079 , H01L2924/0132 , H01L2924/10162 , H01L2924/14 , H01L2924/181 , H01L2924/00 , H01L2924/01026 , H01L2924/00012 , H01L2924/3512 , H01L2224/85399 , H01L2224/05599
摘要： In a semiconductor device having a heat radiation plate, the tips of inner leads connected to a semiconductor chip have a lead width w and a lead thickness t, the width being less than the thickness. The inner leads are secured to the heat radiation plate. Fastening the inner leads to the heat radiation plate supports the latter and eliminates the need for suspending leads. A lead pitch p, the lead width w and lead thickness t of the inner lead tips connected to the semiconductor chip have the relations of w
摘要翻译：在具有散热板的半导体器件中，连接到半导体芯片的内部引线的尖端具有引线宽度w和引线厚度t，宽度小于厚度。内引线固定在散热板上。将内部引线固定到散热板上，支撑后者，并且不需要悬挂引线。引线间距p，连接到半导体芯片的内引线头的引线宽度w和引线厚度t具有w

9. 发明授权

US06340837B1 Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06340837B1
公开(公告)日：2002-01-22
申请号：US09387052
申请日：1999-08-31
申请人： Yoshinori Miyaki , Kazunari Suzuki , Daisuke Omoda
发明人： Yoshinori Miyaki , Kazunari Suzuki , Daisuke Omoda
IPC分类号： H01L23495
CPC分类号： H01L24/32 , H01L21/565 , H01L23/49503 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2224/05554 , H01L2224/29007 , H01L2224/32014 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/49171 , H01L2224/73265 , H01L2224/83855 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01047 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/15747 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/01026 , H01L2924/3512 , H01L2924/00012
摘要： A semiconductor device includes a semiconductor chip having a plurality of electrodes formed on a first major surface thereof, a resin package sealing the semiconductor chip therein, of leads electrically connected to the electrodes of the semiconductor chip and formed so as to extend inside and outside the resin package, and a support lead supporting the semiconductor chip at a part of a second major surface of the semiconductor chip opposite the first major surface. The semiconductor chip is bonded to the support lead with an adhesive tape.
摘要翻译：一种半导体器件包括：半导体芯片，其具有形成在其第一主表面上的多个电极，密封其中的半导体芯片的树脂封装，引线电连接到半导体芯片的电极，并且形成为在内部和外部延伸树脂封装，以及支撑引线，其在半导体芯片的与第一主表面相对的第二主表面的一部分处支撑半导体芯片。半导体芯片用胶带粘合到支撑引线上。

10. 发明授权

US06221322B1 Strontium nitrate and method for manufacturing same 失效
标题翻译：硝酸锶及其制造方法
公开(公告)号：US06221322B1
公开(公告)日：2001-04-24
申请号：US09196158
申请日：1998-11-20
申请人： Tatsumi Inamura , Atsushi Tsukada , Kazunari Suzuki , Choju Nagata
发明人： Tatsumi Inamura , Atsushi Tsukada , Kazunari Suzuki , Choju Nagata
IPC分类号： C01B2148
CPC分类号： C01F11/462 , C01F11/36 , C01P2004/61 , C01P2006/80
摘要： Low-cost, high-purity strontium nitrate that is low in Ba, Na, Ca, Cr, and other impurities and that is suitable for use in airbags or the like is provided. High-purity strontium nitrate having a Ba content of 0.01 wt % or lower, an Na content of 0.005 wt % or lower, a Ca content of 0.01 wt % or lower, a Cr content of less than 0.001 wt %, and a purity of 99.5 wt % or higher is produced by a manufacturing method comprising a first step for performing crystallization by adding nitric acid to an aqueous solution obtained by dissolving a strontium compound as a starting material, a second step for separating the resulting crystals, a third step for crystallizing the resulting separated solution, and a fourth step for separating the resulting crystals.
摘要翻译：提供低成本，高纯度的Ba，Na，Ca，Cr等杂质的硝酸锶，适用于安全气囊等。 Ba含量为0.01重量％以下，Na含量为0.005重量％以下，Ca含量为0.01重量％以下，Cr含量小于0.001重量％的高纯度硝酸锶，纯度为通过包括通过将硝酸添加到通过溶解锶化合物作为起始原料获得的水溶液中进行结晶的第一步骤的制造方法制备99.5重量％以上，第二步，用于分离所得晶体，第三步骤使所得分离的溶液结晶，以及分离所得晶体的第四步骤。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式