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1. 发明申请

US20090169769A1 DEPOSITION APPARATUS AND DEPOSITION METHOD 失效
标题翻译：沉积装置和沉积方法
公开(公告)号：US20090169769A1
公开(公告)日：2009-07-02
申请号：US12343263
申请日：2008-12-23
申请人： Kazuhito Nishimura , Hideki Sasaoka
发明人： Kazuhito Nishimura , Hideki Sasaoka
IPC分类号： C23C16/00 , H05H1/24
CPC分类号： C23C16/503 , C23C16/4586 , C23C16/463 , H01J37/32009 , H01J37/32541 , H01J2237/2001 , H01L21/67109
摘要： A deposition apparatus includes: a first electrode for placing a processing object; a second electrode for generating plasma with the first electrode, the second electrode being opposed to the first electrode; and a cooling part for cooling the processing object, wherein between the processing object and the cooling part, as compared with a thermal resistance between a central part of the processing object and the cooling part, a thermal resistance between a peripheral part peripheral to the central part and the cooling part is small.
摘要翻译：沉积设备包括：用于放置处理对象的第一电极; 用于利用所述第一电极产生等离子体的第二电极，所述第二电极与所述第一电极相对; 以及用于冷却处理对象的冷却部件，其中在处理对象和冷却部件之间，与处理对象的中心部分和冷却部件之间的热阻相比，中央部分周边部分之间的热电阻部分和冷却部分很小。

2. 发明申请

US20080226838A1 Plasma CVD apparatus and film deposition method 审中-公开
标题翻译：等离子体CVD装置和膜沉积方法
公开(公告)号：US20080226838A1
公开(公告)日：2008-09-18
申请号：US12004679
申请日：2007-12-21
申请人： Kazuhito Nishimura , Hideki Sasaoka
发明人： Kazuhito Nishimura , Hideki Sasaoka
IPC分类号： C23C16/513 , C23C16/54
CPC分类号： C23C16/4586 , C23C16/0272 , C23C16/26 , C23C16/45565 , C23C16/45578 , C23C16/4558 , C23C16/4585 , C23C16/503 , C23C16/52 , H01J37/32018 , H01J37/32027 , H01J37/3244 , H01J2237/3321
摘要： A plasma CVD apparatus includes a first electrode which is disposed in a reacting furnace and on which a substrate is mounted, a second electrode that is disposed above and opposite the first electrode and generates plasma with the first electrode, and a first gas supply nozzle that is disposed at a height between a height of the first electrode in the reacting furnace and a height of the second electrode, and has a plurality of ejection ports formed and arranged in such a way as to surround an area between the first electrode and the second electrode where plasma is generated.
摘要翻译：等离子体CVD装置包括设置在反应炉中并且其上安装有基板的第一电极，设置在第一电极上方并与第一电极相对的第二电极，并且与第一电极产生等离子体，以及第一气体供给喷嘴，设置在反应炉中的第一电极的高度和第二电极的高度之间的高度处，并且具有多个喷射口，其形成和布置成围绕第一电极和第二电极之间的区域产生等离子体的电极。

3. 发明申请

US20060113891A1 Field emission electrode, manufacturing method thereof, and electronic device 失效
标题翻译：场发射电极，其制造方法和电子器件
公开(公告)号：US20060113891A1
公开(公告)日：2006-06-01
申请号：US11287838
申请日：2005-11-28
申请人： Kazuhito Nishimura , Hideki Sasaoka
发明人： Kazuhito Nishimura , Hideki Sasaoka
IPC分类号： H01J63/04 , H01J1/62
CPC分类号： H01J1/3048 , H01J2201/30457
摘要： An electron emission film having a pattern of diamond in X-ray diffraction and formed of a plurality of diamond fine grains having a grain diameter of 5 nm to 10 nm is formed on a substrate. The electron emission film can restrict the field intensity to a low level when it causes an emission current to flow, and has a uniform electron emission characteristic.
摘要翻译：在基板上形成具有X射线衍射中的金刚石图案和由多个粒径为5nm〜10nm的金刚石细晶粒形成的电子发射膜。当电子发射膜导致发射电流流动时，电子发射膜可以将场强限制在低水平，并且具有均匀的电子发射特性。

4. 发明授权

US08035291B2 Field emission electrode, manufacturing method thereof, and electronic device 有权
标题翻译：场发射电极，其制造方法和电子器件
公开(公告)号：US08035291B2
公开(公告)日：2011-10-11
申请号：US12779583
申请日：2010-05-13
申请人： Kazuhito Nishimura , Hideki Sasaoka
发明人： Kazuhito Nishimura , Hideki Sasaoka
IPC分类号： H01J1/62 , H01J63/04
CPC分类号： H01J1/3048 , H01J2201/30457
摘要： An electron emission film having a pattern of diamond in X-ray diffraction and formed of a plurality of diamond fine grains having a grain diameter of 5 nm to 10 nm is formed on a substrate. The electron emission film can restrict the field intensity to a low level when it causes an emission current to flow, and has a uniform electron emission characteristic.
摘要翻译：在基板上形成具有X射线衍射中的金刚石图案和由多个粒径为5nm〜10nm的金刚石细晶粒形成的电子发射膜。当电子发射膜导致发射电流流动时，电子发射膜可以将场强限制在低水平，并且具有均匀的电子发射特性。

5. 发明申请

US20070074664A1 Plasma CVD apparatus and plasma surface treatment method 审中-公开
标题翻译：等离子体CVD装置和等离子体表面处理方法
公开(公告)号：US20070074664A1
公开(公告)日：2007-04-05
申请号：US11541306
申请日：2006-09-29
申请人： Kazuhito Nishimura , Hideki Sasaoka
发明人： Kazuhito Nishimura , Hideki Sasaoka
IPC分类号： C23C16/00
CPC分类号： C23C16/52 , C23C16/272 , C23C16/463 , H01J37/34 , H01J37/3497 , H01J2237/2001 , H01J2237/3321
摘要： A substrate is mounted on a mount surface of an anode in a chamber. A flow path is formed in a cathode facing the anode, and cooling water is circulated therethrough. A voltage is applied across the anode and the cathode to form a layer of carbon nanowall on the substrate by plasma, and thereafter the anode is cooled by a cooling member to rapidly cool the substrate to a predetermined temperature.
摘要翻译：基板安装在室中的阳极的安装表面上。在面向阳极的阴极中形成流路，冷却水循环通过。在阳极和阴极两端施加电压，通过等离子体在衬底上形成碳纳米壁层，然后通过冷却构件冷却阳极以将衬底快速冷却到预定温度。

6. 发明授权

US08307782B2 Deposition apparatus and deposition method 失效
标题翻译：沉积设备和沉积方法
公开(公告)号：US08307782B2
公开(公告)日：2012-11-13
申请号：US12343263
申请日：2008-12-23
申请人： Kazuhito Nishimura , Hideki Sasaoka
发明人： Kazuhito Nishimura , Hideki Sasaoka
IPC分类号： C23C16/455 , H01L21/02
CPC分类号： C23C16/503 , C23C16/4586 , C23C16/463 , H01J37/32009 , H01J37/32541 , H01J2237/2001 , H01L21/67109
摘要： A deposition apparatus includes: a first electrode for placing a processing object; a second electrode for generating plasma with the first electrode, the second electrode being opposed to the first electrode; and a cooling part for cooling the processing object, wherein between the processing object and the cooling part, as compared with a thermal resistance between a central part of the processing object and the cooling part, a thermal resistance between a peripheral part peripheral to the central part and the cooling part is small.
摘要翻译：沉积设备包括：用于放置处理对象的第一电极; 用于利用所述第一电极产生等离子体的第二电极，所述第二电极与所述第一电极相对; 以及用于冷却处理对象的冷却部件，其中在处理对象和冷却部件之间，与处理对象的中心部分和冷却部件之间的热阻相比，中央部分周边部分之间的热电阻部分和冷却部分很小。

7. 发明授权

US07935548B2 Deposition apparatus and deposition method 有权
标题翻译：沉积设备和沉积方法
公开(公告)号：US07935548B2
公开(公告)日：2011-05-03
申请号：US12334832
申请日：2008-12-15
申请人： Kazuhito Nishimura , Hideki Sasaoka
发明人： Kazuhito Nishimura , Hideki Sasaoka
IPC分类号： H01L21/66 , H01L21/62
CPC分类号： C23C16/4586 , C23C16/463
摘要： A deposition apparatus includes: a first electrode for placing a processing object; a second electrode for generating plasma with the first electrode, the second electrode being opposed to the first electrode; and a heat flow control heat transfer part for drawing heat from the processing object to generate a heat flow from a central area to a peripheral area of the processing object.
摘要翻译：沉积设备包括：用于放置处理对象的第一电极; 用于利用所述第一电极产生等离子体的第二电极，所述第二电极与所述第一电极相对; 以及热流控制传热部，用于从处理对象抽出热量，以产生从处理对象的中心区域到周边区域的热流。

8. 发明授权

US07755271B2 Field emission electrode, manufacturing method thereof, and electronic device 失效
标题翻译：场发射电极，其制造方法和电子器件
公开(公告)号：US07755271B2
公开(公告)日：2010-07-13
申请号：US11287838
申请日：2005-11-28
申请人： Kazuhito Nishimura , Hideki Sasaoka
发明人： Kazuhito Nishimura , Hideki Sasaoka
IPC分类号： H01J1/62 , H01J63/04
CPC分类号： H01J1/3048 , H01J2201/30457
摘要： An electron emission film having a pattern of diamond in X-ray diffraction and formed of a plurality of diamond fine grains having a grain diameter of 5 nm to 10 nm is formed on a substrate. The electron emission film can restrict the field intensity to a low level when it causes an emission current to flow, and has a uniform electron emission characteristic.
摘要翻译：在基板上形成具有X射线衍射中的金刚石图案和由多个粒径为5nm〜10nm的金刚石细晶粒形成的电子发射膜。当电子发射膜导致发射电流流动时，电子发射膜可以将场强限制在低水平，并且具有均匀的电子发射特性。

9. 发明授权

US07812512B2 Field emission electrode, method and apparatus of manufacturing the same by carrying a humidification process and an aging process 有权
标题翻译：场致发射电极，通过进行加湿处理和老化处理来制造其的方法和装置
公开(公告)号：US07812512B2
公开(公告)日：2010-10-12
申请号：US12239061
申请日：2008-09-26
申请人： Kazuhito Nishimura , Hideki Sasaoka
发明人： Kazuhito Nishimura , Hideki Sasaoka
IPC分类号： H01J1/30 , H01J1/304 , H01J9/02 , H01J9/44
CPC分类号： H01J1/304 , H01J9/025 , H01J2201/30453 , H01J2201/30457
摘要： A method of manufacturing a field emission electrode includes humidification processing to absorb water at a surface of an electron emission film emitting electrons as a result of application of a voltage, and voltage application processing to apply an aging voltage between the humidified electron emission film and an electrode provided facing the electron emission film.
摘要翻译：制造场致发射电极的方法包括加湿处理，以吸收作为施加电压的结果发射电子的电子发射膜的表面的水;以及电压施加处理，以在加湿的电子发射膜和面向电子发射膜设置的电极。

10. 发明授权

US09040815B2 Thin-film solar cell and method of fabricating thin-film solar cell 有权
标题翻译：薄膜太阳能电池及制造薄膜太阳能电池的方法
公开(公告)号：US09040815B2
公开(公告)日：2015-05-26
申请号：US13877242
申请日：2011-09-27
申请人： Tohru Takeda , Kazuhito Nishimura
发明人： Tohru Takeda , Kazuhito Nishimura
IPC分类号： H01L31/05 , H01L31/02 , H01L31/046
CPC分类号： H01L31/0516 , H01L31/0201 , H01L31/046 , H01L31/0463 , Y02E10/50
摘要： A thin-film solar cell includes a cell having a transparent electrode layer, a photoelectric conversion layer, and a back electrode layer stacked on a transparent insulation substrate. A plurality of cells are connected in series to constitute a cell string. A bus bar is arranged on the back electrode layer of an end cell constituting the cell string. The thin-film solar cell has a photoelectric conversion layer on a series-connection direction end of the transparent electrode layer. In plan view, a series-connection direction end of the back electrode layer at an end of the cell string and the series-connection direction end of the transparent electrode layer at the end of the cell string do not overlap, while the bus bar and the transparent electrode layer at the end cell constituting the cell string overlap at least partially. A method of fabricating the thin-film solar cell is provided.
摘要翻译：薄膜太阳能电池包括具有透明电极层的单元，光电转换层和层叠在透明绝缘基板上的背面电极层。多个单元串联连接以构成单元串。在构成电池串的端电池的背面电极层上设置汇流条。薄膜太阳能电池在透明电极层的串联方向端部具有光电转换层。在平面图中，电池串端部的背面电极层的串联方向端和电池串端部的透明电极层的串联方向端部不重叠，而母线和构成电池串的端电池的透明电极层至少部分重叠。提供了制造薄膜太阳能电池的方法。

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