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1. 发明申请

US20140224665A1 SEMICONDUCTOR MATERIAL, OPTICAL HYDROGEN GENERATING DEVICE USING SAME, AND METHOD OF PRODUCING HYDROGEN 有权
标题翻译：半导体材料，使用其的光学氢生成装置和生产氢的方法
公开(公告)号：US20140224665A1
公开(公告)日：2014-08-14
申请号：US14342489
申请日：2012-08-31
申请人： Kazuhito Hato , Kenichi Tokuhiro , Takahiro Suzuki , Takaiki Nomura , Kenichiro Ota , Akimitsu Ishihara
发明人： Kazuhito Hato , Kenichi Tokuhiro , Takahiro Suzuki , Takaiki Nomura , Kenichiro Ota , Akimitsu Ishihara
IPC分类号： B01J27/24 , C25B1/00 , C25B1/04 , C25B9/00
CPC分类号： B01J27/24 , B01J19/127 , B01J35/004 , B01J37/347 , C01B3/042 , C25B1/003 , C25B1/04 , C25B9/00 , C25B9/06 , Y02E60/364 , Y02E60/366
摘要： A semiconductor material of the present invention is a semiconductor material including an oxynitride containing at least one element selected from the Group 4 elements and Group 5 elements. In the oxynitride, part of at least one selected from oxygen and nitrogen is substituted with carbon. Nb is preferable as the Group 5 element.
摘要翻译：本发明的半导体材料是包含含有选自第4族元素和第5族元素中的至少一种元素的氮氧化物的半导体材料。在氧氮化物中，选自氧和氮中的至少一种的一部分被碳取代。 Nb优选为第5族元素。

2. 发明授权

US09630169B2 Semiconductor material, optical hydrogen generating device using same, and method of producing hydrogen 有权
公开(公告)号：US09630169B2
公开(公告)日：2017-04-25
申请号：US14342489
申请日：2012-08-31
申请人： Kazuhito Hato , Kenichi Tokuhiro , Takahiro Suzuki , Takaiki Nomura , Kenichiro Ota , Akimitsu Ishihara
发明人： Kazuhito Hato , Kenichi Tokuhiro , Takahiro Suzuki , Takaiki Nomura , Kenichiro Ota , Akimitsu Ishihara
IPC分类号： B01J27/24 , B01J19/12 , B01J37/34 , B01J35/00 , C01B3/04 , C25B1/00 , C25B1/04 , C25B9/00 , C25B9/06
CPC分类号： B01J27/24 , B01J19/127 , B01J35/004 , B01J37/347 , C01B3/042 , C25B1/003 , C25B1/04 , C25B9/00 , C25B9/06 , Y02E60/364 , Y02E60/366
摘要： A semiconductor material of the present invention is a semiconductor material including an oxynitride containing at least one element selected from the Group 4 elements and Group 5 elements. In the oxynitride, part of at least one selected from oxygen and nitrogen is substituted with carbon. Nb is preferable as the Group 5 element.

3. 发明申请

US20120156578A1 PHOTOELECTROCHEMICAL CELL AND ENERGY SYSTEM USING SAME 有权
标题翻译：光电化学电池和使用相同的能量系统
公开(公告)号：US20120156578A1
公开(公告)日：2012-06-21
申请号：US13393107
申请日：2011-03-22
申请人： Noboru Taniguchi , Kenichi Tokuhiro , Takahiro Suzuki , Tomohiro Kuroha , Takaiki Nomura , Kazuhito Hato , Satoru Tamura
发明人： Noboru Taniguchi , Kenichi Tokuhiro , Takahiro Suzuki , Tomohiro Kuroha , Takaiki Nomura , Kazuhito Hato , Satoru Tamura
IPC分类号： H01M8/06 , C25B1/04 , C25B9/04
CPC分类号： C25B1/003 , B01J35/004 , C25B11/0442 , H01M8/0656 , Y02E60/366 , Y02E60/368 , Y02P20/135
摘要： A photoelectrochemical cell (100) includes: a semiconductor electrode (120) including a conductor (121) and semiconductor layers (122, 123) disposed on the conductor (121); a counter electrode (130) connected electrically to the conductor (121); an electrolyte (140) in contact with surfaces of the semiconductor layer (123) and the counter electrode (130); and a container (110) accommodating the semiconductor electrode (120), the counter electrode (130) and the electrolyte (140). A band edge level ECS of a conduction band, a band edge level EVS of a valence band, and a Fermi level EFS in a surface near-field region of the semiconductor layer, and a band edge level ECJ of a conduction band, a band edge level EVJ of a valence band, and a Fermi level EFJ in a junction plane near-field region of the semiconductor layer with the conductor satisfy, relative to a vacuum level, ECS-EFS>ECJ-EFJ, EFS-EVS −4.44 eV, and EVS
摘要翻译：光电化学电池（100）包括：包括导体（121）和设置在导体（121）上的半导体层（122,123）的半导体电极（120）; 与所述导体（121）电连接的对电极（130）; 与所述半导体层（123）和所述对电极（130）的表面接触的电解质（140）; 以及容纳半导体电极（120），对电极（130）和电解质（140）的容器（110）。导带的带边缘电平ECS，价带的带边缘电平EVS和半导体层的表面近场区域中的费米能级EFS，以及导带的带边缘电平ECJ，带 ECS-EFS> ECJ-EFJ，EFS-EVS -4.44eV，EVS <-5.67eV。半导体层的表面近场区域中的费米能级EFS和具有导体的半导体层的结面近场区域中的费米能级EFJ相对于真空度满足-5.67eV

4. 发明授权

US08663435B2 Optical semiconductor and method for producing the same, optical semiconductor device, photocatalyst, hydrogen producing device, and energy system 有权
标题翻译：光半导体及其制造方法，光半导体装置，光催化剂，制氢装置，能源系统等
公开(公告)号：US08663435B2
公开(公告)日：2014-03-04
申请号：US13482301
申请日：2012-05-29
申请人： Takahiro Suzuki , Takaiki Nomura , Satoru Tamura , Kazuhito Hato , Noboru Taniguchi , Kenichi Tokuhiro , Nobuhiro Miyata
发明人： Takahiro Suzuki , Takaiki Nomura , Satoru Tamura , Kazuhito Hato , Noboru Taniguchi , Kenichi Tokuhiro , Nobuhiro Miyata
IPC分类号： C25B9/00
CPC分类号： C01G33/00 , C01B3/042 , C01B21/0821 , C01B2203/066 , C01P2002/72 , C01P2002/84 , H01M8/0656 , Y02E60/364 , Y02P20/128 , Y02P70/56
摘要： The method for producing the optical semiconductor of the present disclosure includes a mixing step of producing a mixture containing a reduction inhibitor and a niobium compound that contains at least oxygen in its composition; a nitriding step of nitriding the mixture by the reaction between the mixture and a nitrogen compound gas; and a washing step of isolating niobium oxynitride from the material obtained through the nitriding step by dissolving chemical species other than niobium oxynitride with a washing liquid. The optical semiconductor of the present disclosure substantially consists of niobium oxynitride having a crystal structure of baddeleyite and having a composition represented by the composition formula, NbON.
摘要翻译：本公开的光半导体的制造方法包括：混合工序，其制造含有还原抑制剂和至少含有氧的组合物的铌化合物的混合物; 通过混合物和氮化合物气体之间的反应氮化该混合物的氮化步骤; 以及从通过氮化步骤获得的材料通过用洗涤液溶解除了氮氧化铌之外的化学物质来分离氮氧化铌的洗涤步骤。本公开的光半导体基本上由具有菱铁矿晶体结构的NbO的NbO的组成式表示的组成的氮氧化铌组成。

5. 发明申请

US20130075250A1 HYDROGEN PRODUCTION DEVICE 有权
标题翻译：氢生产设备
公开(公告)号：US20130075250A1
公开(公告)日：2013-03-28
申请号：US13702443
申请日：2011-08-26
申请人： Kenichi Tokuhiro , Takaiki Nomura , Kazuhito Hato , Noboru Taniguchi , Takahiro Suzuki , Satoru Tamura
发明人： Kenichi Tokuhiro , Takaiki Nomura , Kazuhito Hato , Noboru Taniguchi , Takahiro Suzuki , Satoru Tamura
IPC分类号： C25B11/04
CPC分类号： C25B11/0442 , B01J35/004 , C01B3/042 , C25B1/003 , C25B9/08 , C25B11/03 , Y02E60/364 , Y02E60/368
摘要： The hydrogen production device of the present invention includes: a first electrode (120) including a conductive substrate (101) and a photocatalytic semiconductor layer (102); a second electrode (103) that is electrically connected to the first electrode (120) and disposed in a second region (123) opposite to a first region (122) relative to the first electrode (120), when the first region (122) is defined as a region on a side of a surface of the first electrode (120) in which the photocatalytic semiconductor layer (102) is provided; a water-containing electrolyte solution (106); and a housing (105) containing these. The first electrode (120) is provided with a through-hole (131) at a position and the second electrode (103) is provided with a through-hole (132) at a position corresponding to the position, and the through-holes form a communicating hole (130) for allowing the first region (122) and the second region (123) to communicate with each other. An ion exchange membrane (104) having substantially the same shape as the communicating hole (130) is disposed in the communicating hole (130) to close the communicating hole (130).
摘要翻译：本发明的制氢装置包括：包括导电基板（101）和光催化半导体层（102）的第一电极（120）; 当第一区域（122）与第一电极（120）电连接并且相对于第一电极（120）设置在与第一区域相对的第二区域（123）中时，第二电极（103）被定义为在其中设置有光催化半导体层（102）的第一电极（120）的表面的一侧的区域; 含水电解质溶液（106）; 和包含它们的壳体（105）。第一电极（120）在一个位置处设置有通孔（131），并且第二电极（103）在与该位置相对应的位置处设置有通孔（132），并且通孔形式用于允许第一区域（122）和第二区域（123）彼此连通的连通孔（130）。具有与连通孔（130）大致相同形状的离子交换膜（104）设置在连通孔（130）中以闭合连通孔（130）。

6. 发明授权

US08999119B2 Hydrogen production device 有权
标题翻译：氢气生产装置
公开(公告)号：US08999119B2
公开(公告)日：2015-04-07
申请号：US13702443
申请日：2011-08-26
申请人： Kenichi Tokuhiro , Takaiki Nomura , Kazuhito Hato , Noboru Taniguchi , Takahiro Suzuki , Satoru Tamura
发明人： Kenichi Tokuhiro , Takaiki Nomura , Kazuhito Hato , Noboru Taniguchi , Takahiro Suzuki , Satoru Tamura
IPC分类号： C25B1/04 , C25B1/02 , C25B9/00 , C25B9/06 , C25B9/08 , C25B9/10 , C25B13/00 , C25B11/02 , C25B15/00 , C25B11/04 , C01B3/04 , C25B1/00 , C25B11/03 , B01J35/00
CPC分类号： C25B11/0442 , B01J35/004 , C01B3/042 , C25B1/003 , C25B9/08 , C25B11/03 , Y02E60/364 , Y02E60/368
摘要： The hydrogen production device of the present invention includes: a first electrode including a conductive substrate and a photocatalytic semiconductor layer; a second electrode that is electrically connected to the first electrode and disposed in a second region opposite to a first region relative to the first electrode; the first region is defined as a region on a side of a surface of the first electrode in which the photocatalytic semiconductor layer is provided; a water-containing electrolyte solution; and a housing containing these. The first electrode is provided with first through-holes and the second electrode is provided with second through-holes; and the first through-holes and second through-holes form a communicating hole for allowing the first region and the second region to communicate with each other. An ion exchange membrane having substantially the same shape as the communicating hole is disposed in the communicating hole to close the communicating hole.
摘要翻译：本发明的氢制造装置包括：第一电极，其包括导电性基板和光催化性半导体层; 第二电极，其电连接到第一电极并且设置在相对于第一电极与第一区域相反的第二区域中; 第一区域被定义为设置有光催化半导体层的第一电极的表面侧的区域; 含水电解质溶液; 和包含这些的房屋。第一电极设置有第一通孔，第二电极设置有第二通孔; 并且第一通孔和第二通孔形成用于使第一区域和第二区域彼此连通的连通孔。具有与连通孔大致相同形状的离子交换膜设置在连通孔中以闭合连通孔。

7. 发明授权

US08821700B2 Photoelectrochemical cell and energy system using same 有权
标题翻译：光电化学电池和能量系统使用相同
公开(公告)号：US08821700B2
公开(公告)日：2014-09-02
申请号：US13502322
申请日：2010-11-04
申请人： Tomohiro Kuroha , Takaiki Nomura , Kazuhito Hato , Noboru Taniguchi , Takahiro Suzuki , Kenichi Tokuhiro
发明人： Tomohiro Kuroha , Takaiki Nomura , Kazuhito Hato , Noboru Taniguchi , Takahiro Suzuki , Kenichi Tokuhiro
IPC分类号： C25B1/04 , C25B5/00 , C25B9/06 , C25B1/00 , C01B3/04 , H01M8/06 , H01M14/00
CPC分类号： C25B1/003 , C01B3/042 , H01M8/0606 , H01M14/005 , Y02E60/364 , Y02E60/366 , Y02E60/50 , Y02P20/135
摘要： A photoelectrochemical cell (100) includes: a semiconductor electrode (120) including a conductor (121), a first n-type semiconductor layer (122) having a nanotube array structure, and a second n-type semiconductor layer (123); a counter electrode (130) connected to the conductor (121); an electrolyte (140) in contact with the second n-type semiconductor layer (123) and the counter electrode (130); and a container (110) accommodating the semiconductor electrode (120), the counter electrode (130) and the electrolyte (140). Relative to a vacuum level, (I) band edge levels of a conduction band and a valence band in the second n-type semiconductor layer (123), respectively, are higher than band edge levels of a conduction band and a valence band in the first n-type semiconductor layer (122), (II) a Fermi level of the first n-type semiconductor layer (122) is higher than a Fermi level of the second n-type semiconductor layer (123), and (III) a Fermi level of the conductor (121) is higher than the Fermi level of the first n-type semiconductor layer (122).
摘要翻译：光电化学电池（100）包括：包括导体（121），具有纳米管阵列结构的第一n型半导体层（122）和第二n型半导体层（123）的半导体电极（120）连接到导体（121）的对电极（130）; 与第二n型半导体层（123）和对电极（130）接触的电解液（140）; 以及容纳半导体电极（120），对电极（130）和电解质（140）的容器（110）。相对于真空度，第二n型半导体层（123）中的导带和价带的带边缘电平分别高于导带和带隙的带边缘电平，第一n型半导体层（122），（II）第一n型半导体层（122）的费米能级高于第二n型半导体层（123）的费米能级，（III）导体（121）的费米能级高于第一n型半导体层（122）的费米能级。

8. 发明申请

US20140004435A1 PHOTOELECTRODE AND METHOD FOR PRODUCING SAME, PHOTOELECTROCHEMICAL CELL AND ENERGY SYSTEM USING SAME, AND HYDROGEN GENERATION METHOD 审中-公开
标题翻译：用于制造它们的光电及其制造方法，使用它们的光电化学电池和能量系统以及氢生成方法
公开(公告)号：US20140004435A1
公开(公告)日：2014-01-02
申请号：US14005156
申请日：2012-04-25
申请人： Satoru Tamura , Takaiki Nomura , Takahiro Suzuki , Kenichi Tokuhiro , Noboru Taniguchi , Kazuhito Hato , Nobuhiro Miyata
发明人： Satoru Tamura , Takaiki Nomura , Takahiro Suzuki , Kenichi Tokuhiro , Noboru Taniguchi , Kazuhito Hato , Nobuhiro Miyata
IPC分类号： C25B11/04 , C25B1/00 , H01M8/06
CPC分类号： C25B1/003 , B01J35/004 , C01B3/042 , C25B1/04 , C25B11/0405 , C25B11/0478 , H01G9/2027 , H01M8/0656 , H01M16/003 , Y02E10/542 , Y02E60/364 , Y02E60/366 , Y02P20/135 , Y02P70/521
摘要： A photoelectrode (100) of the present invention includes a conductive layer (12) and a photocatalytic layer (13) provided on the conductive layer (12). The conductive layer (12) is made of a metal nitride. The photocatalytic layer (13) is made of at least one selected from the group consisting of a nitride semiconductor and an oxynitride semiconductor. When the photocatalytic layer (13) is made of a n-type semiconductor, the energy difference between the vacuum level and the Fermi level of the conductive layer (12) is smaller than the energy difference between the vacuum level and the Fermi level of the photocatalytic layer (13).When the photocatalytic layer (13) is made of a p-type semiconductor, the energy difference between the vacuum level and the Fermi level of the conductive layer (12) is larger than the energy difference between the vacuum level and the Fermi level of the photocatalytic layer (13).
摘要翻译：本发明的光电极（100）包括设置在导电层（12）上的导电层（12）和光催化层（13）。导电层（12）由金属氮化物制成。光催化层（13）由选自氮化物半导体和氧氮化物半导体中的至少一种制成。当光催化层（13）由n型半导体制成时，导电层（12）的真空度与费米能级之间的能量差小于真空级与费米能级之间的能量差光催化层（13）。当光催化层（13）由p型半导体制成时，导电层（12）的真空度与费米能级之间的能量差大于真空度与费米能级之间的能量差光催化层（13）。

9. 发明申请

US20130316254A1 ENERGY SYSTEM 审中-公开
标题翻译：能源系统
公开(公告)号：US20130316254A1
公开(公告)日：2013-11-28
申请号：US13984413
申请日：2012-02-29
申请人： Kenichi Tokuhiro , Takaiki Nomura , Takahiro Suzuki , Satoru Tamura , Nobuhiro Miyata , Noboru Taniguchi , Kazuhito Hato
发明人： Kenichi Tokuhiro , Takaiki Nomura , Takahiro Suzuki , Satoru Tamura , Nobuhiro Miyata , Noboru Taniguchi , Kazuhito Hato
IPC分类号： H01M8/04 , H01M8/06
CPC分类号： H01M8/04119 , H01M8/04029 , H01M8/04291 , H01M8/0606 , H01M8/0656 , H01M16/003 , Y02E60/364
摘要： An energy system includes an solar hydrogen producing unit (101) that produces hydrogen through decomposition of water by a photocatalytic effect, a fuel cell (103) that generates electricity by a reaction between the hydrogen produced by the solar hydrogen producing unit (101) and an oxidizing gas and discharges water as a reaction product, and a water distribution mechanism (104) that returns the water serving as the reaction product discharged from the fuel cell (103) to the solar hydrogen producing unit (101). With the configuration, an energy system that suppresses an amount of external water supply to a low level to achieve good water balance can be provided.
摘要翻译：能量系统包括通过光催化作用分解水而产生氢的太阳能氢产生单元（101），通过由太阳能氢产生单元（101）产生的氢和氧化气体并作为反应产物排出水;以及水分配机构（104），其将用作从燃料电池（103）排出的反应产物的水返回到太阳能氢产生单元（101）。通过该结构，能够提供将外部供水量抑制到低水平以实现良好的水平衡的能量系统。

10. 发明授权

US09157155B2 Photoelectrochemical cell and energy system using same 有权
标题翻译：光电化学电池和能量系统使用相同
公开(公告)号：US09157155B2
公开(公告)日：2015-10-13
申请号：US13393107
申请日：2011-03-22
申请人： Noboru Taniguchi , Kenichi Tokuhiro , Takahiro Suzuki , Tomohiro Kuroha , Takaiki Nomura , Kazuhito Hato , Satoru Tamura
发明人： Noboru Taniguchi , Kenichi Tokuhiro , Takahiro Suzuki , Tomohiro Kuroha , Takaiki Nomura , Kazuhito Hato , Satoru Tamura
IPC分类号： C25B1/06 , B01J35/02 , C25B1/00 , C25B11/04 , B01J35/00 , H01M8/06
CPC分类号： C25B1/003 , B01J35/004 , C25B11/0442 , H01M8/0656 , Y02E60/366 , Y02E60/368 , Y02P20/135
摘要： A photoelectrochemical cell (100) includes: a semiconductor electrode (120) including a conductor (121) and semiconductor layers (122, 123) disposed on the conductor (121); a counter electrode (130) connected electrically to the conductor (121); an electrolyte (140) in contact with surfaces of the semiconductor layer (123) and the counter electrode (130); and a container (110) accommodating the semiconductor electrode (120), the counter electrode (130) and the electrolyte (140). A band edge level ECS of a conduction band, a band edge level EVS of a valence band, and a Fermi level EFS in a surface near-field region of the semiconductor layer, and a band edge level ECJ of a conduction band, a band edge level EVJ of a valence band, and a Fermi level EFJ in a junction plane near-field region of the semiconductor layer with the conductor satisfy, relative to a vacuum level, ECS−EFS>ECJ−EFJ, EFS−EVS −4.44 eV, and EVS
摘要翻译：光电化学电池（100）包括：包括导体（121）和设置在导体（121）上的半导体层（122,123）的半导体电极（120）; 与所述导体（121）电连接的对电极（130）; 与所述半导体层（123）和所述对电极（130）的表面接触的电解质（140）; 以及容纳半导体电极（120），对电极（130）和电解质（140）的容器（110）。导带的带边缘电平ECS，价带的带边缘电平EVS和半导体层的表面近场区域中的费米能级EFS，以及导带的带边缘电平ECJ，带 ECS-EFS> ECJ-EFJ，EFS-EVS -4.44eV，EVS <-5.67eV。半导体层的表面近场区域中的费米能级EFS和具有导体的半导体层的结面近场区域中的费米能级EFJ相对于真空度满足-5.67eV

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