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1. 发明授权

US4894835A Surface emitting type semiconductor laser 失效
标题翻译：表面发射型半导体激光器
公开(公告)号：US4894835A
公开(公告)日：1990-01-16
申请号：US249870
申请日：1988-09-27
申请人： Kazuhisa Uomi , Shinji Tsuji , Makoto Okai , Shinji Sakano , Naoki Chinone
发明人： Kazuhisa Uomi , Shinji Tsuji , Makoto Okai , Shinji Sakano , Naoki Chinone
IPC分类号： H01S5/00 , H01S5/187 , H01S5/34 , H01S5/42
CPC分类号： H01S5/187 , H01S5/42 , H01S5/3428
摘要： A surface emitting laser diode having a two-dimensionally extended light emitting region is disclosed in which the light emitting region includes a plurality of stripe regions and gap regions each formed between adjacent stripe regions, the stripe regions are optically coupled with each other through the gap regions, and an even-order diffraction grating is formed in at least a part of the light emitting area. The laser diode having the above structure can emit a high-intensity, well-collimated laser beam.

2. 发明授权

US4885753A Semiconductor laser device of variable wavelength type 失效
标题翻译：可变波长类型的半导体激光器件
公开(公告)号：US4885753A
公开(公告)日：1989-12-05
申请号：US256318
申请日：1988-10-07
申请人： Makoto Okai , Kazuhisa Uomi , Shinji Tsuji , Shinji Sakano , Naoki Chinone
发明人： Makoto Okai , Kazuhisa Uomi , Shinji Tsuji , Shinji Sakano , Naoki Chinone
IPC分类号： H01S5/00 , H01S3/08 , H01S3/082 , H01S5/042 , H01S5/0625 , H01S5/10 , H01S5/12 , H01S5/125 , H01S5/40
CPC分类号： H01S5/06256 , H01S5/0265 , H01S5/06258 , H01S5/1032 , H01S5/1215 , H01S5/125 , H01S5/4031
摘要： A tunable semiconductor laser device has an active region for generating light, and a feedback region which is optically coupled with the active region and includes a perturbation portion having non-uniform perturbation period. In this semiconductor laser device, the light intensity distribution in the feedback region is changed to vary the degree of coupling of light propagated in the feedback region with a desired part of the perturbation portion, thereby varying the wavelength of emitted light.
摘要翻译：可调谐半导体激光器件具有用于产生光的有源区域和与有源区域光学耦合并包括具有不均匀扰动周期的扰动部分的反馈区域。在该半导体激光器件中，改变反馈区域中的光强度分布，以改变在反馈区域中传播的光与扰动部分的所需部分的耦合度，从而改变发射光的波长。

3. 发明授权

US4873691A Wavelength-tunable semiconductor laser 失效
标题翻译：波长可调半导体激光器
公开(公告)号：US4873691A
公开(公告)日：1989-10-10
申请号：US224726
申请日：1988-07-27
申请人： Kazuhisa Uomi , Shinji Tsuji , Shinji Sakano , Makoto Okai , Naoki Chinone
发明人： Kazuhisa Uomi , Shinji Tsuji , Shinji Sakano , Makoto Okai , Naoki Chinone
IPC分类号： H01S5/00 , H01S3/1055 , H01S5/042 , H01S5/0625 , H01S5/125 , H01S5/34
CPC分类号： B82Y20/00 , H01S3/1055 , H01S5/06256 , H01S5/125 , H01S5/34
摘要： A wavelength-tunable semiconductor laser having an active part and an external waveguide part is disclosed. The external waveguide part has a diffraction grating, such as a distributed Bragg reflector, and a quantum well structure optically coupled to the diffraction grating, together with electrodes for impressing an electric field to the quantum well structure. By applying the electric filed to the quantum well structure, the refractive index in the optically coupled diffraction grating/quantum well structure, and light oscillation wavelength in the external waveguide part, can be varied.
摘要翻译：公开了一种具有有源部分和外部波导部分的波长可调谐半导体激光器。外部波导部分具有衍射光栅，例如分布式布拉格反射器，以及光学耦合到衍射光栅的量子阱结构，以及用于向量子阱结构施加电场的电极。通过将电场施加到量子阱结构，可以改变光耦合衍射光栅/量子阱结构中的折射率和外部波导部分中的光振荡波长。

4. 发明授权

US5119393A Semiconductor laser device capable of controlling wavelength shift 失效
标题翻译：可控制波长转换的半导体激光器件
公开(公告)号：US5119393A
公开(公告)日：1992-06-02
申请号：US537901
申请日：1990-06-13
申请人： Akihiko Oka , Shinji Sakano , Naoki Chinone , Tsukuru Ohtoshi , Kazuhisa Uomi , Tomonobu Tsuchiya , Makoto Okai
发明人： Akihiko Oka , Shinji Sakano , Naoki Chinone , Tsukuru Ohtoshi , Kazuhisa Uomi , Tomonobu Tsuchiya , Makoto Okai
IPC分类号： H01S5/062 , H01S5/0625 , H01S5/10 , H01S5/12 , H01S5/227 , H01S5/34 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/06258 , H01S5/10 , H01S5/06213 , H01S5/06256 , H01S5/1028 , H01S5/106 , H01S5/12 , H01S5/2275 , H01S5/3428 , H01S5/34306 , H01S5/34313 , H01S5/3434
摘要： A wavelength-tunable semiconductor laser device presenting a large wavelength-tunable range or a very-high-speed modulating semiconductor laser device having a distributed feedback structure including a diffraction grating as in the case of a DBR laser or a DFB laser incorporates therein a plurality of active layers differing from one another in constituent elements or composition ratio or thickness for reducing spectral line widths, while improving single-mode spectral oscillation characteristics.

5. 发明授权

US5177758A Semiconductor laser device with plural active layers and changing optical properties 失效
标题翻译：具有多个有源层和改变光学特性的半导体激光器件
公开(公告)号：US5177758A
公开(公告)日：1993-01-05
申请号：US803206
申请日：1991-12-06
申请人： Akihiko Oka , Shinji Sakano , Naoki Chinone , Tsukuru Ohtoshi , Kazuhisa Uomi , Tomonobu Tsuchiya , Makoto Okai
发明人： Akihiko Oka , Shinji Sakano , Naoki Chinone , Tsukuru Ohtoshi , Kazuhisa Uomi , Tomonobu Tsuchiya , Makoto Okai
IPC分类号： H01S5/062 , H01S5/0625 , H01S5/10 , H01S5/12 , H01S5/227 , H01S5/34 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/06258 , H01S5/10 , H01S5/06213 , H01S5/06256 , H01S5/1028 , H01S5/106 , H01S5/12 , H01S5/2275 , H01S5/3428 , H01S5/34306 , H01S5/34313 , H01S5/3434
摘要： A wavelength-tunable semiconductor laser device presenting a large wavelength-tunable range or a very-high-speed modulating semiconductor laser device having a distributed feedback structure including a diffraction grating as in the case of a DBR laser or a DFB laser incorporates therein a plurality of active layers differing from one another in constituent elements or composition ratio or thickness for reducing spectral line widths, while improving single-mode spectral oscillation characteristics.
摘要翻译：具有大波长可调范围的波长可调谐半导体激光器件或具有如在DBR激光器或DFB激光器的情况下包括衍射光栅的分布式反馈结构的非常高速调制的半导体激光器件包含多个的有源层彼此不同的组成元素或组成比或厚度以减小谱线宽度，同时改善单模光谱振荡特性。

6. 发明授权

US5170404A Semiconductor laser device suitable for optical communications systems drive 失效
标题翻译：半导体激光器件适用于光通信系统的驱动
公开(公告)号：US5170404A
公开(公告)日：1992-12-08
申请号：US576607
申请日：1990-08-31
申请人： Tsukuru Ohtoshi , Shinji Sasaki , Naoki Chinone , Kazuhisa Uomi , Shinji Sakano
发明人： Tsukuru Ohtoshi , Shinji Sasaki , Naoki Chinone , Kazuhisa Uomi , Shinji Sakano
IPC分类号： H01S5/22 , H01S5/223 , H01S5/24 , H01S5/32 , H01S5/323 , H01S5/34
CPC分类号： B82Y20/00 , H01S5/24 , H01S5/32325 , H01S5/2205 , H01S5/2211 , H01S5/2227 , H01S5/2237 , H01S5/3201 , H01S5/32391 , H01S5/3406
摘要： Disclosed in a semiconductor laser device for use in a system or apparatus utilizing light for information transmission in optical communication or the like, in which lattice defects or the like are prevented from occurring in the vicinity of a light-emitting active area to thereby reduce a leakage current which substantially makes no contribution to light emission. In order to realize the above semiconductor laser device, a wide gap area for preventing a leakage current is formed to be flat or formed to be spatially apart from the active area.
摘要翻译：公开在用于在光通信等中利用光进行信息传输的系统或装置的半导体激光装置中，其中防止在发光有源区附近发生晶格缺陷等，从而减少泄漏电流基本上对发光没有贡献。为了实现上述半导体激光器件，用于防止漏电流的宽间隙区域形成为平坦或形成为与有源区域空间分开。

7. 发明授权

US5042049A Semiconductor optical device 失效
标题翻译：半导体光学器件
公开(公告)号：US5042049A
公开(公告)日：1991-08-20
申请号：US461253
申请日：1990-01-05
申请人： Tsukuru Ohtoshi , Shinji Sakano , Kazuhisa Uomi , Naoki Chinone
发明人： Tsukuru Ohtoshi , Shinji Sakano , Kazuhisa Uomi , Naoki Chinone
IPC分类号： G02F1/025 , G02B6/122 , G02F1/015 , G02F1/313 , H01S5/00 , H01S5/026 , H01S5/0625 , H01S5/10 , H01S5/12 , H01S5/14 , H01S5/227 , H01S5/34
CPC分类号： B82Y20/00 , G02B6/122 , H01S5/06258 , H01S5/34 , H01S5/026 , H01S5/0265 , H01S5/06256 , H01S5/1025 , H01S5/12 , H01S5/14 , H01S5/227 , H01S5/2275 , H01S5/3403 , H01S5/3404
摘要： A semiconductor optical device in which an optical waveguide (3, 11) provided on a semiconductor substrate (1) comprises a strained-layer superlattice shows an extremely small transmission loss. A semiconductor optical device with further improved characteristics is obtainable by using a stained-layer superlattice for a portion required to show a great change in refractive index, such as an optical crosspoint switch portion (10), as well as for the optical waveguide (3, 11). The strained-layer superlattice comprises a first semiconductor layer and a second semiconductor layer having a narrower band gap and a greater lattice constant as compared with the first semiconductor layer, the two layers grown periodically.

8. 发明授权

US5574289A Semiconductor optical integrated device and light receiver using said device 失效
标题翻译：半导体光集成器件和使用该器件的光接收器
公开(公告)号：US5574289A
公开(公告)日：1996-11-12
申请号：US24084
申请日：1993-03-01
申请人： Masahiro Aoki , Hirohisa Sano , Shinji Sakano , Makoto Suzuki , Makoto Takahashi , Kazuhisa Uomi , Tatemi Ido , Atsushi Takai
发明人： Masahiro Aoki , Hirohisa Sano , Shinji Sakano , Makoto Suzuki , Makoto Takahashi , Kazuhisa Uomi , Tatemi Ido , Atsushi Takai
IPC分类号： G02F1/017 , H01L31/0352 , H01L33/00 , H01S5/026 , H01S5/10 , H01S5/12 , H01S5/227 , H01S5/34 , H01S5/343 , H01S5/40 , H01S5/50 , H01L29/06 , H01L31/0328 , H01L31/0336
CPC分类号： B82Y20/00 , G02F1/01708 , H01L31/035236 , H01L33/0062 , H01S5/0265 , H01S5/227 , H01S5/34 , G02F2203/07 , H01S5/026 , H01S5/10 , H01S5/106 , H01S5/12 , H01S5/2272 , H01S5/3404 , H01S5/34306 , H01S5/34313 , H01S5/4068 , H01S5/5036
摘要： Disclosed is a semiconductor optical integrated device and method of fabricating the device, the device having a plurality of quantum well structures, formed on a single substrate, acting as optical waveguides, the plurality of quantum well structures respectively having different lattice mismatches with the substrate and/or different strains (e.g., respectively compressive strain and tensile strain). The method includes selectively depositing the quantum well structures by, e.g., organometallic vapor phase epitaxy on growth regions of the substrate, the growth regions being defined by insulating layer patterning masks, with a width of the growth regions and/or a width of the patterning mask being different for the different quantum well structures. Each quantum well structure includes quantum well layers of III-V or II-VI compound semiconductor material, the Group III or Group II elements each including at least two elements, one having a relatively large atomic diameter and another having a relatively small atomic diameter. Also disclosed is a light receiver that can independently absorb TE-mode and TM-mode light in series, which can be used in a polarized-wave diversity receiver for coherent optical communication.
摘要翻译：公开了一种制造该器件的半导体光学集成器件和方法，该器件具有多个量子阱结构，形成在单个衬底上，作为光波导，多个量子阱结构分别与衬底具有不同的晶格错配; /或不同的应变（例如，分别为压缩应变和拉伸应变）。该方法包括通过例如在衬底的生长区域上的有机金属气相外延选择性地沉积量子阱结构，生长区域由绝缘层图案化掩模限定，具有生长区域的宽度和/或图案化宽度掩模对于不同的量子阱结构是不同的。每个量子阱结构包括III-V或II-VI族化合物半导体材料的量子阱层，III族或II族元素各自包含至少两种元素，一种具有较大的原子直径，另一种具有较小的原子直径。还公开了可以独立地吸收串联的TE模式和TM模式光的光接收器，其可以用于用于相干光通信的偏振波分集接收器中。

9. 发明授权

US5173909A Wavelength tunable laser diode 失效
标题翻译：波长激光二极管
公开(公告)号：US5173909A
公开(公告)日：1992-12-22
申请号：US720691
申请日：1991-06-25
申请人： Shinji Sakano , Akihiko Oka , Katutoshi Saito , Naoki Chinone
发明人： Shinji Sakano , Akihiko Oka , Katutoshi Saito , Naoki Chinone
IPC分类号： H01S5/00 , H01S5/026 , H01S5/042 , H01S5/06 , H01S5/062 , H01S5/0625 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/0425 , H01S5/0612 , H01S5/0261 , H01S5/06206 , H01S5/0622 , H01S5/06255 , H01S5/34306 , H01S5/34313
摘要： A wavelength tunable laser diode comprising a temperature variable heater separated from an active layer by a distance less than the thickness of a compound semiconductor substrate. Because the heater is located very close to the active layer, the response time of temperature change is improved. That in turn widens the tunable range of the laser diode.

10. 发明授权

US4813757A Optical switch including bypass waveguide 失效
标题翻译：光开关包括旁路波导
公开(公告)号：US4813757A
公开(公告)日：1989-03-21
申请号：US122343
申请日：1987-11-18
申请人： Shinji Sakano , Hiroaki Inoue , Hiroyoshi Matsumura , Hitoshi Nakamura , Toshio Katsuyama , Naoki Chinone
发明人： Shinji Sakano , Hiroaki Inoue , Hiroyoshi Matsumura , Hitoshi Nakamura , Toshio Katsuyama , Naoki Chinone
IPC分类号： G02B6/28 , G02F1/313 , G02B6/10
CPC分类号： G02B6/2804 , G02F1/3137 , G02F1/3138
摘要： Herein disclosed is a branch type optical switch having three or more optical waveguides capable of being coupled to one another in a coupling region, in which is formed a refractive index changing portion for effecting the function of the branch type optical switch by changing the refractive index thereof. This optical switch has a small coupling loss and an excellent extinction ratio. Also disclosed is an intersection type optical switch having two or more optical waveguides intersecting each other. The input optical waveguide and the output waveguide are connected at their intersection by means of a bypass optical waveguide to construct the above-specified branch type optical switch in the coupling regions of the bypass optical waveguides and the input and output optical waveguides, and the bypass optical waveguide has a curved or polygonal shape. Thus, it is possible to provide a small-sized optical switch which has an excellent extinction ratio and little variability in characteristics.
摘要翻译：这里公开了一种分支型光开关，其具有能够在耦合区域中彼此耦合的三个或更多个光波导，其中形成折射率变化部分，以通过改变折射率来实现分支型光开关的功能其中。该光开关具有小的耦合损耗和优异的消光比。还公开了具有彼此相交的两个以上的光波导的交叉型光开关。输入光波导和输出波导通过旁路光波导在其交叉点处连接，以在旁路光波导和输入和输出光波导的耦合区域中构建上述指定的分支型光开关，并且旁路光波导具有弯曲或多边形。因此，可以提供具有优异的消光比和特性变化小的小型光开关。

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