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1. 发明申请

US20120094399A1 PHOTOVOLTAIC CELL MANUFACTURING METHOD AND PHOTOVOLTAIC CELL MANUFACTURING APPARATUS 审中-公开
标题翻译：光电池制造方法和光电池制造设备
公开(公告)号：US20120094399A1
公开(公告)日：2012-04-19
申请号：US13378749
申请日：2009-06-18
申请人： Kazuhiro Yamamuro , Seiichi Sato , Mitsuru Yahagi , Junpei Yuyama , Kyuzo Nakamura
发明人： Kazuhiro Yamamuro , Seiichi Sato , Mitsuru Yahagi , Junpei Yuyama , Kyuzo Nakamura
IPC分类号： H01L21/66
CPC分类号： H01L31/03921 , H01L31/186 , Y02E10/50 , Y02P70/521
摘要： A photovoltaic cell manufacturing method includes: forming a photoelectric converter including a plurality of compartment elements, the compartment elements adjacent to each other being electrically connected; determining the compartment element having a structural defect in the photoelectric converter; narrowing down a region in which the structural defect exists in the compartment element based on a resistance distribution which is obtained by measuring resistances of a plurality of portions between the compartment elements adjacent to each other, image-capturing the inside of the narrowed region in which the structural defect exists by use of an image capturing section, accurately determining a position of the structural defect from the obtained image so that a portion in which the structural defect exists in the compartment element is restricted; and removing the structural defect by irradiating the portion in which the structural defect exists with a laser beam.
摘要翻译：光电池制造方法包括：形成包括多个隔室元件的光电转换器，彼此相邻的隔室元件电连接; 确定在光电转换器中具有结构缺陷的隔室元件; 基于通过测量彼此相邻的隔间元件之间的多个部分的电阻而获得的电阻分布，使隔室元件中存在结构缺陷的区域变窄，图像捕获其中窄带区域的内部通过使用图像捕获部分存在结构缺陷，从所获得的图像精确地确定结构缺陷的位置，使得限制了在隔室元件中存在结构缺陷的部分; 并通过用激光束照射存在结构缺陷的部分来去除结构缺陷。

2. 发明申请

US20110020963A1 METHOD AND APPARATUS FOR MANUFACTURING SOLAR CELL 审中-公开
标题翻译：制造太阳能电池的方法和装置
公开(公告)号：US20110020963A1
公开(公告)日：2011-01-27
申请号：US12865675
申请日：2009-03-27
申请人： Kazuhiro Yamamuro , Seiichi Sato , Mitsuru Yahagi , Junpei Yuyama , Kyuzo Nakamura
发明人： Kazuhiro Yamamuro , Seiichi Sato , Mitsuru Yahagi , Junpei Yuyama , Kyuzo Nakamura
IPC分类号： H01L21/66 , G01R27/08
CPC分类号： H01L31/208 , H01L31/046 , H02S50/10 , Y02E10/50 , Y02P70/521
摘要： A method for manufacturing a solar cell, includes: forming a photoelectric converter which includes a plurality of compartment elements, and in which the compartment elements adjacent to each other are electrically connected; specifying a compartment element having a structural defect in the photoelectric converter; restricting a portion in which the structural defect exists in the compartment element by specifying a defect portion based on a resistance distribution that is obtained by measuring resistances of portions between the compartment elements adjacent to each other; and removing the structural defect by supplying a bias voltage to the portion in which the structural defect exists.
摘要翻译：一种制造太阳能电池的方法，包括：形成包括多个隔室元件的光电转换器，并且其中彼此相邻的隔间元件电连接; 指定在光电转换器中具有结构缺陷的隔室元件; 通过基于通过测量彼此相邻的隔间元件之间的部分的电阻获得的电阻分布来指定缺陷部分来限制其中结构缺陷存在于隔室元件中的部分; 以及通过向存在结构缺陷的部分提供偏压来去除结构缺陷。

3. 发明申请

US20110005571A1 METHOD AND APPARATUS FOR MANUFACTURING SOLAR CELL, AND SOLAR CELL 审中-公开
标题翻译：制造太阳能电池和太阳能电池的方法和装置
公开(公告)号：US20110005571A1
公开(公告)日：2011-01-13
申请号：US12865665
申请日：2009-03-27
申请人： Kazuhiro Yamamuro , Seiichi Sato , Mitsuru Yahagi , Junpei Yuyama , Kyuzo Nakamura
发明人： Kazuhiro Yamamuro , Seiichi Sato , Mitsuru Yahagi , Junpei Yuyama , Kyuzo Nakamura
IPC分类号： H01L31/042 , H01L21/66 , H01L31/18 , G01R27/08
CPC分类号： H01L31/208 , H01L31/0463 , H02S50/10 , Y02E10/50 , Y02P70/521
摘要： A method for manufacturing a solar cell, includes: forming a photoelectric converter which includes a plurality of compartment elements, and in which the compartment elements adjacent to each other are electrically connected; specifying a first compartment element having a structural defect in the photoelectric converter; restricting a portion in which the structural defect exists in the first compartment element by specifying a defect portion based on a resistance distribution that is obtained by measuring resistances of portions between the compartment elements adjacent to each other; and removing or separating off the structural defect by irradiating the first compartment element and a second compartment element with a laser beam so as to intersect a boundary section between the first compartment element including the portion in which the structural defect exists and the second compartment element adjacent to the first compartment element.
摘要翻译：一种制造太阳能电池的方法，包括：形成包括多个隔室元件的光电转换器，并且其中彼此相邻的隔间元件电连接; 指定在所述光电转换器中具有结构缺陷的第一隔室元件; 通过基于通过测量彼此相邻的隔室元件之间的部分的电阻获得的电阻分布来指定缺陷部分来限制其中结构缺陷存在于第一隔室元件中的部分; 并且通过用激光束照射第一隔室元件和第二隔室元件以与包括存在结构缺陷的部分的第一隔室元件和相邻的第二隔室元件之间的边界部分相交，来移除或分离结构缺陷到第一个隔间元件。

4. 发明申请

US20100112230A1 COATED FILM FORMING METHOD 有权
标题翻译：涂膜成型方法
公开(公告)号：US20100112230A1
公开(公告)日：2010-05-06
申请号：US12641721
申请日：2009-12-18
申请人： Takahiro Miyata , Masao Murata , Mitsuru Yahagi , Junpei Yuyama , Kyuzo Nakamura , Atsushi Kira , Kou Fuwa , Ai Tanaka , Tooru Okuno , Susumu Sakio
发明人： Takahiro Miyata , Masao Murata , Mitsuru Yahagi , Junpei Yuyama , Kyuzo Nakamura , Atsushi Kira , Kou Fuwa , Ai Tanaka , Tooru Okuno , Susumu Sakio
IPC分类号： B05D1/02
CPC分类号： B41J2/155
摘要： A coated film with no observable streak is formed. The landing positions of a first discharge liquid discharged through a first printing head and the landing positions of a second discharge liquid discharged through a second printing head are disposed in a mixed manner in an area on a substrate where the first printing head and the second printing head overlap. Which discharge liquids are to be landed is determined according to random numbers. Since a coated film which is formed with the first and second discharge liquids in a mixed manner is disposed between a coated film formed with the first discharge liquids and a coated film formed with the second discharge liquids, a boundary is obscured and no streak appears.
摘要翻译：形成无可观察条纹的涂膜。通过第一打印头排出的第一排出液体的着陆位置和通过第二打印头排出的第二排出液体的着陆位置以混合的方式设置在基板上的第一印刷头和第二印刷区域头重叠。哪些排放液体将根据随机数来确定。由于在与第一排出液体形成的涂膜和形成有第二排出液体的涂膜之间设置以混合形成有第一排出液体和第二排出液体的涂膜，因此边界被遮蔽并且不出现条纹。

5. 发明授权

US08685498B2 Coated film forming method 有权
标题翻译：涂膜成膜法
公开(公告)号：US08685498B2
公开(公告)日：2014-04-01
申请号：US12641721
申请日：2009-12-18
申请人： Takahiro Miyata , Masao Murata , Mitsuru Yahagi , Junpei Yuyama , Kyuzo Nakamura , Atsushi Kira , Kou Fuwa , Ai Tanaka , Tooru Okuno , Susumu Sakio
发明人： Takahiro Miyata , Masao Murata , Mitsuru Yahagi , Junpei Yuyama , Kyuzo Nakamura , Atsushi Kira , Kou Fuwa , Ai Tanaka , Tooru Okuno , Susumu Sakio
IPC分类号： B05D1/02
CPC分类号： B41J2/155
摘要： A coated film with no observable streak is formed. The landing positions of a first discharge liquid discharged through a first printing head and the landing positions of a second discharge liquid discharged through a second printing head are disposed in a mixed manner in an area on a substrate where the first printing head and the second printing head overlap. Which discharge liquids are to be landed is determined according to random numbers. Since a coated film which is formed with the first and second discharge liquids in a mixed manner is disposed between a coated film formed with the first discharge liquids and a coated film formed with the second discharge liquids, a boundary is obscured and no streak appears.
摘要翻译：形成无可观察条纹的涂膜。通过第一打印头排出的第一排出液体的着陆位置和通过第二打印头排出的第二排出液体的着陆位置以混合的方式设置在基板上的第一印刷头和第二印刷区域头重叠。哪些排放液体将根据随机数来确定。由于在与第一排出液体形成的涂膜和形成有第二排出液体的涂膜之间设置以混合形成有第一排出液体和第二排出液体的涂膜，因此边界被遮蔽并且不出现条纹。

6. 发明授权

US08652970B2 Vacuum processing method and vacuum processing apparatus 有权
标题翻译：真空加工方法和真空处理装置
公开(公告)号：US08652970B2
公开(公告)日：2014-02-18
申请号：US13133514
申请日：2010-03-24
申请人： Yoshiyasu Tajima , Seiichi Takahashi , Kyuzo Nakamura
发明人： Yoshiyasu Tajima , Seiichi Takahashi , Kyuzo Nakamura
IPC分类号： H01L21/302 , H01L21/461 , C03C15/00 , C03C25/68
CPC分类号： H01L21/31116 , H01L21/02046 , H01L21/02063 , H01L21/67069
摘要： A processing gas is introduced to remove an oxide film on the surface of a silicon substrate 5. F radicals are allowed to act on the surface of the silicon substrate to etch a silicon layer. Then, NH3 gas, N2 gas and NF3 gas are introduced, allowing NHxFy to act on the oxidized surface of the silicon substrate 5, thereby forming (NH4)2SiF6. The resulting (NH4)2SiF6 is sublimated to remove by-products (SiOF, SiOH) on the surface of the silicon substrate 5.
摘要翻译：引入处理气体以除去硅衬底5的表面上的氧化物膜.F自由基被允许作用在硅衬底的表面上以蚀刻硅层。然后，引入NH 3气体，N 2气体和NF 3气体，使NH x F y作用于硅衬底5的氧化表面，由此形成（NH 4）2 SiF 6。将所得的（NH 4）2 SiF 6升华以除去硅衬底5的表面上的副产物（SiOF，SiOH）。

7. 发明授权

US08158198B2 Method for forming tantalum nitride film 有权
标题翻译：形成氮化钽膜的方法
公开(公告)号：US08158198B2
公开(公告)日：2012-04-17
申请号：US11885399
申请日：2006-03-03
申请人： Narishi Gonohe , Satoru Toyoda , Harunori Ushikawa , Tomoyasu Kondo , Kyuzo Nakamura
发明人： Narishi Gonohe , Satoru Toyoda , Harunori Ushikawa , Tomoyasu Kondo , Kyuzo Nakamura
IPC分类号： C23C16/00
CPC分类号： H01L21/76843 , C23C16/34 , C23C16/45525 , C23C16/45534 , C23C16/45536 , C23C16/4554 , C23C16/45553 , H01L21/28562
摘要： A tantalum nitride film-forming method comprises the steps of introducing a raw gas consisting of a coordination compound constituted by an elemental tantalum (Ta) having a coordinated ligand represented by the general formula: N═(R,R′) (in the formula, R and R′ may be the same or different and each represents an alkyl group having 1 to 6 carbon atoms), and a halogen gas into a vacuum chamber; and reacting these components with one another on a substrate to thus form a surface adsorption film comprising a mono-atomic or multi (several)-atomic layer and composed of a compound represented by the following general formula: TaNx(Hal)y(R, R′)z (in the formula, Hal represents a halogen atom), then introducing radicals generated from an H atom-containing compound to thus remove Ta—N bonds present in the resulting compound through breakage thereof and remove, at the same time, the remaining R(R′) groups bonded to the N atoms present in the compound through the cleavage thereof and to thus form a tantalum nitride film rich in tantalum atoms. The resulting tantalum nitride film has a low resistance, low contents of C and N atoms, and a high compositional ratio: Ta/N, can ensure sufficiently high adherence to the distributing wire-forming film and can thus be useful as a barrier film. Moreover, tantalum particles are implanted in the resulting film according to the sputtering technique to thus further enrich the film with tantalum.
摘要翻译：氮化钽膜形成方法包括以下步骤：引入由具有由以下通式表示的配位配体的元素钽（Ta）构成的配位化合物构成的原料气体：N =（R，R'）（式 R和R'可以相同或不同，各自表示碳原子数1〜6的烷基），卤素气体进入真空室; 并将这些组分彼此反应在基底上，从而形成包含单原子或多（多个）原子层的表面吸附膜，并由以下通式表示的化合物组成：TaNx（Hal）y（R， R'）z（式中，Hal表示卤素原子），然后引入由含H原子的化合物产生的自由基，从而通过其残留除去所得化合物中存在的Ta-N键，同时除去剩余的R（R'）基团通过其切割而与化合物中存在的N原子键合，从而形成富含钽原子的氮化钽膜。所得到的氮化钽膜具有低电阻，C原子和N原子含量低，组成比高：Ta / N可以确保足够高的附着线分布线形成膜，因此可用作阻挡膜。此外，根据溅射技术将钽颗粒注入到所得的膜中，从而进一步用钽富集膜。

8. 发明申请

US20110068402A1 THIN FILM TRANSISTOR AND METHOD FOR PRODUCING THIN FILM TRANSISTOR 审中-公开
标题翻译：薄膜晶体管及其生产薄膜晶体管的方法
公开(公告)号：US20110068402A1
公开(公告)日：2011-03-24
申请号：US12881641
申请日：2010-09-14
申请人： Satoru Takasawa , Satoru Ishibashi , Kyuzo Nakamura , Tadashi Masuda
发明人： Satoru Takasawa , Satoru Ishibashi , Kyuzo Nakamura , Tadashi Masuda
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L23/53238 , C23C14/0057 , C23C14/185 , H01L21/2855 , H01L21/76841 , H01L23/53233 , H01L27/124 , H01L29/458 , H01L2924/0002 , H01L2924/00
摘要： A metallic wiring film, which is not exfoliated even when exposed to a plasma of hydrogen, is provided. A metallic wiring film 20a is constituted by an adhesion layer 51 in which an additive metal is added to copper and a low-resistance metallic layer 52, which is made of pure copper, is disposed on the adhesion layer 51. When the additive metal made of at least one of Ti, Zr and Cr, and oxygen are included in a copper alloy which is in the adhesion layer 51 and a source electrode and a drain electrode are formed from it, copper does not precipitate at an interface between the adhesion layer 51 and the silicon layer even when being exposed to the hydrogen plasma, which prevents exfoliation from occurring between the adhesion layer 51 and the silicon layer. If the amount of additive metal increases, the adhesion layer 51 cannot be etched with an etching liquid for etching the low-resistance metallic layer 52, so that the maximum additional amount to permit the etching to be performed is the upper limit.
摘要翻译：提供即使暴露于氢等离子体时也不会剥离的金属布线膜。金属布线膜20a由在铜中添加添加金属的粘合层51和由纯铜制成的低电阻金属层52设置在粘合层51上。当添加金属制成的Ti，Zr和Cr中的至少一种，并且氧被包括在粘合层51中的铜合金中，并且源电极和漏电极由它形成，铜不会在粘合层 51和硅层，即使当暴露于氢等离子体时，其防止粘附层51和硅层之间发生剥离。如果添加金属的量增加，则不能用用于蚀刻低电阻金属层52的蚀刻液来蚀刻粘合层51，使得允许进行蚀刻的最大附加量为上限。

9. 发明申请

US20110048927A1 SPUTTERING APPARATUS AND SPUTTERING METHOD 审中-公开
标题翻译：溅射装置和喷射方法
公开(公告)号：US20110048927A1
公开(公告)日：2011-03-03
申请号：US12991800
申请日：2009-06-23
申请人： Naoki Morimoto , Tomoyasu Kondo , Kokichi Kamada , Kyuzo Nakamura
发明人： Naoki Morimoto , Tomoyasu Kondo , Kokichi Kamada , Kyuzo Nakamura
IPC分类号： C23C14/35
CPC分类号： C23C14/35 , C23C14/3407 , H01J37/3408 , H01J37/3452 , H01L21/2855 , H01L21/76843 , H01L21/76873
摘要： An inexpensive sputtering apparatus of simple construction is provided in which a film can be formed with good coating characteristics relative to each of micropores of high aspect ratio. The sputtering apparatus has: a target lying opposite to a substrate W which is disposed inside a vacuum chamber; a magnet assembly which generates a tunnel-shaped magnetic field in front of a sputtering surface of the target; a gas introduction means which introduces a sputtering gas into the vacuum chamber; and a sputtering power supply which charges negative potential to the target. There are provided magnetic field generating means to generate a vertical magnetic field of such a nature that vertical lines of magnetic force M pass through a sputtering surface and through an entire surface of the substrate at a predetermined distance from one another.
摘要翻译：提供一种简单结构的廉价的溅射装置，其中相对于每个高纵横比的微孔，可以形成具有良好涂层特性的膜。溅射装置具有：设置在真空室内的与基板W相对的靶; 磁体组件，其在目标的溅射表面的前方产生隧道状磁场; 气体引入装置，其将溅射气体引入真空室; 以及向目标物体负电荷的溅射电源。提供了用于产生垂直磁场的磁场产生装置，其特征在于磁力M的垂直线通过溅射表面并穿过基板的整个表面彼此预定的距离。

10. 发明授权

US5024854A Method of manufacturing perpendicular type magnetic recording member 失效
标题翻译：制造垂直型磁记录部件的方法
公开(公告)号：US5024854A
公开(公告)日：1991-06-18
申请号：US412535
申请日：1989-09-22
申请人： Kyuzo Nakamura , Yoshifumi Ota , Taiki Yamada
发明人： Kyuzo Nakamura , Yoshifumi Ota , Taiki Yamada
IPC分类号： G11B5/64 , G11B5/66 , G11B5/85 , H01F10/20 , H01F41/20
CPC分类号： H01F41/20 , G11B5/64 , G11B5/66 , G11B5/85 , H01F10/20
摘要： A perpendicular type magnetic recording member comprising a perpendicular-incidence magnetic film on a substrate, the perpendicular-incidence magnetic film comprising a magnetic metal and oxygen, the magnetic metal being selected from the group consisting of ferro-magnetic alloys, alloys thereof and combinations thereof; and a method of manufacturing the perpendicular type recording member by utilizing vapor deposition techniques, which may include sputtering and ionization.
摘要翻译：一种垂直型磁记录部件，包括在基板上的垂直入射磁性膜，所述垂直入射磁性膜包括磁性金属和氧，所述磁性金属选自铁磁性合金，其合金及其组合 ; 以及通过利用可包括溅射和电离的气相沉积技术来制造垂直型记录部件的方法。

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