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    • 4. 发明授权
    • Semiconductor device and method of manufacturing the same
    • 半导体装置及其制造方法
    • US08791521B2
    • 2014-07-29
    • US13423664
    • 2012-03-19
    • Koji NakaharaKazuhiro MatsuoMasayuki TanakaHirofumi Iikawa
    • Koji NakaharaKazuhiro MatsuoMasayuki TanakaHirofumi Iikawa
    • H01L29/788
    • H01L27/11521H01L29/42324H01L29/7881
    • A semiconductor device includes an interelectrode insulating film formed between a charge storage layer and a control electrode layer. The interelectrode insulating film is formed in a first region above an upper surface of an element isolation insulating film, a second region along a sidewall of the charge storage layer, and a third region above an upper surface of the charge storage layer. The interelectrode insulating film includes a first stack including a first silicon nitride film or a high dielectric constant film interposed between a first and a second silicon oxide film or a second stack including a second high dielectric constant film and a third silicon oxide film, and a second silicon nitride film formed between the control electrode layer and the first or the second stack. The second silicon nitride film is relatively thinner in the third region than in the first region.
    • 半导体器件包括在电荷存储层和控制电极层之间形成的电极间绝缘膜。 电极间绝缘膜形成在元件隔离绝缘膜的上表面上方的第一区域,沿着电荷存储层的侧壁的第二区域和电荷存储层的上表面上方的第三区域。 电极间绝缘膜包括:第一堆叠,其包括介于第一和第二氧化硅膜之间的第一氮化硅膜或高介电常数膜,或包括第二高介电常数膜和第三氧化硅膜的第二堆叠, 形成在控制电极层和第一或第二堆叠之间的第二氮化硅膜。 在第三区域中,第二氮化硅膜比第一区域相对薄。
    • 8. 发明申请
    • SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    • 半导体器件及其制造方法
    • US20100308393A1
    • 2010-12-09
    • US12722111
    • 2010-03-11
    • Kazuhiro MatsuoMasayuki Tanaka
    • Kazuhiro MatsuoMasayuki Tanaka
    • H01L29/788H01L21/336
    • H01L29/42336H01L27/11521H01L29/40114
    • A semiconductor device including a semiconductor substrate having an active region isolated by an element isolation insulating film; a floating gate electrode film formed on a gate insulating film residing on the active region; an interelectrode insulating film formed above an upper surface of the element isolation insulating film and an upper surface and sidewalls of the floating gate electrode film, the interelectrode insulating film being configured by multiple film layers including a high dielectric film having a dielectric constant equal to or greater than a silicon nitride film; a control gate electrode film formed on the interelectrode insulating film; and a silicon oxide film formed between the upper surface of the floating gate electrode film and the interelectrode insulating film; wherein the high dielectric film of the interelectrode insulating film is placed in direct contact with the sidewalls of the floating gate electrode film.
    • 一种半导体器件,包括具有通过元件隔离绝缘膜隔离的有源区的半导体衬底; 形成在位于有源区上的栅极绝缘膜上的浮栅电极膜; 在所述元件隔离绝缘膜的上表面上方形成的电极间绝缘膜,以及所述浮栅电极膜的上表面和侧壁,所述电极间绝缘膜由多层膜构成,所述多个膜层包括介电常数等于或等于 大于氮化硅膜; 形成在电极间绝缘膜上的控制栅极电极膜; 以及在所述浮栅电极膜的上表面和所述电极间绝缘膜之间形成的氧化硅膜; 其中,电极间绝缘膜的高电介质膜与浮栅电极膜的侧壁直接接触。
    • 9. 发明授权
    • Nonvolatile semiconductor memory device and method of fabricating the same
    • 非易失性半导体存储器件及其制造方法
    • US07812391B2
    • 2010-10-12
    • US12354200
    • 2009-01-15
    • Kazuhiro MatsuoMasayuki TanakaAtsuhiro Suzuki
    • Kazuhiro MatsuoMasayuki TanakaAtsuhiro Suzuki
    • H01L21/76
    • H01L29/42336H01L27/115H01L27/11521H01L29/94
    • A nonvolatile semiconductor memory device includes a semiconductor substrate having a plurality of active regions separately formed by a plurality of trenches formed in a surface of the substrate at predetermined intervals, a first gate insulating film formed on an upper surface of the substrate corresponding to each active region, a gate electrode of a memory cell transistor formed by depositing an electrical charge storage layer formed on an upper surface of the gate insulating film, a second gate insulating film and a control gate insulating film sequentially, an element isolation insulating film buried in each trench and formed from a coating type oxide film, and an insulating film formed inside each trench on a boundary between the semiconductor substrate and the element isolation insulating film, the insulating film containing nontransition metal atoms and having a film thickness not more than 5 Å.
    • 非易失性半导体存储器件包括:半导体衬底,具有由以形成在衬底的表面中的预定间隔分开形成的多个沟槽分开形成的多个有源区;形成在衬底的上表面上的第一栅极绝缘膜, 区域,通过依次沉积形成在栅极绝缘膜的上表面上的电荷存储层,第二栅极绝缘膜和控制栅极绝缘膜而形成的存储单元晶体管的栅电极,每个区域中埋设的元件隔离绝缘膜 沟槽,并且由涂覆型氧化物膜形成,并且在半导体衬底和元件隔离绝缘膜之间的边界上形成在每个沟槽内的绝缘膜,所述绝缘膜包含非转移金属原子并且具有不大于5的膜厚度。