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1. 发明申请

US20090057685A1 BIPOLAR DEVICE AND FABRICATION METHOD THEREOF 有权
标题翻译：双极器件及其制造方法
公开(公告)号：US20090057685A1
公开(公告)日：2009-03-05
申请号：US12176635
申请日：2008-07-21
申请人： Kazuhiro MOCHIZUKI , Hidekatsu Onose , Natsuki Yokoyama
发明人： Kazuhiro MOCHIZUKI , Hidekatsu Onose , Natsuki Yokoyama
IPC分类号： H01L29/24
CPC分类号： H01L29/1608 , H01L29/0804 , H01L29/66068 , H01L29/7322
摘要： In a mesa type bipolar transistor or a thyristor, since carriers injected from an emitter layer or an anode layer to a base layer or a gate layer diffuse laterally and are recombined, reduction in the size and improvement for the switching frequency is difficult.In the invention, the emitter layer or the anode layer is formed of two high-doped and low-doped layers, a semiconductor region for suppressing recombination comprising an identical semiconductor having an impurity density identical with that of the low-doped layer is present being in contact with a base layer or a gate layer and a surface passivation layer, and the width of the semiconductor region for suppressing recombination is defined equal with or longer than the diffusion length of the carrier. This provides an effect of attaining reduction in the size of the bipolar transistor or improvement of the switching frequency of the thyristor without deteriorating the performance. Further, this has an effect of greatly improving the current gain by successively stacking above the high-doped emitter layer of the bipolar transistor, a hole barrier layer, a conduction band discontinuity relaxed layer and an emitter contact layer.
摘要翻译：在台式双极晶体管或晶闸管中，由于从发射极层或阳极层向基极层或栅极层注入的载流子横向漫射并重新组合，因此难以减小开关频率的尺寸和改善。在本发明中，发射极层或阳极层由两个高掺杂和低掺杂层形成，用于抑制复合的半导体区域包括具有与低掺杂层的杂质密度相同的杂质密度的相同半导体，与基底层或栅极层和表面钝化层接触，并且用于抑制复合的半导体区域的宽度被限定为等于或长于载体的扩散长度。这提供了在不降低性能的情况下实现双极晶体管的尺寸的减小或晶闸管的开关频率的提高的效果。此外，这具有通过连续堆叠在双极晶体管，空穴阻挡层，导带不连续松弛层和发射极接触层的高掺杂发射极层上方大大改善电流增益的效果。

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