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1. 发明授权

US09201404B2 Alkali metal cell, atomic oscillator, and alkali metal cell fabricating method 有权
标题翻译：碱金属电池，原子振荡器和碱金属电池制造方法
公开(公告)号：US09201404B2
公开(公告)日：2015-12-01
申请号：US14082679
申请日：2013-11-18
申请人： Kazuhiro Harasaka , Kazuhiko Adachi , Hiroyoshi Shouji , Akihiro Itoh , Shunichi Sato , Shinji Satoh
发明人： Kazuhiro Harasaka , Kazuhiko Adachi , Hiroyoshi Shouji , Akihiro Itoh , Shunichi Sato , Shinji Satoh
IPC分类号： G04F5/14 , H03B17/00 , H03L7/26
CPC分类号： G04F5/145 , H03B17/00 , H03L7/26
摘要： An alkali metal cell is disclosed, including a substrate in which is formed an opening which penetrates from one face to the other face thereof; a first transparent substrate bonded to the other face of the substrate; and a second transparent substrate bonded to the one face of the substrate, wherein an alkali metal is sealed into a space surrounded by the first transparent substrate and the second transparent substrate in the opening of the substrate, wherein, in the substrate and the second transparent substrate, the space is enclosed by a bonding between a first bonding metal layer formed by a first bonding metal and a second bonding metal layer formed by a second bonding metal, and wherein the second bonding metal layer has a bonding temperature higher than that of the first bonding metal layer.
摘要翻译：公开了一种碱金属电池，包括：基板，其形成有从一个面渗透到另一个面的开口; 粘合到所述基板的另一面的第一透明基板; 以及与基板的一个面接合的第二透明基板，其中在基板的开口部中将碱金属密封在由第一透明基板和第二透明基板包围的空间内，其中，在基板和第二透明基板基板，该空间被第一接合金属形成的第一接合金属层和由第二接合金属形成的第二接合金属层之间的接合包围，并且其中第二接合金属层的接合温度高于第一接合金属层。

2. 发明申请

US20140139294A1 ALKALI METAL CELL, ATOMIC OSCILLATOR, AND ALKALI METAL CELL FABRICATING METHOD 有权
标题翻译：碱金属电池，原子振荡器和碱金属电池制造方法
公开(公告)号：US20140139294A1
公开(公告)日：2014-05-22
申请号：US14082679
申请日：2013-11-18
申请人： Kazuhiro Harasaka , Kazuhiko Adachi , Hiroyoshi Shouji , Akihiro Itoh , Shunichi Sato , Shinji Satoh
发明人： Kazuhiro Harasaka , Kazuhiko Adachi , Hiroyoshi Shouji , Akihiro Itoh , Shunichi Sato , Shinji Satoh
IPC分类号： H03L7/26
CPC分类号： G04F5/145 , H03B17/00 , H03L7/26
摘要： An alkali metal cell is disclosed, including a substrate in which is formed an opening which penetrates from one face to the other face thereof; a first transparent substrate bonded to the other face of the substrate; and a second transparent substrate bonded to the one face of the substrate, wherein an alkali metal is sealed into a space surrounded by the first transparent substrate and the second transparent substrate in the opening of the substrate, wherein, in the substrate and the second transparent substrate, the space is enclosed by a bonding between a first bonding metal layer formed by a first bonding metal and a second bonding metal layer formed by a second bonding metal, and wherein the second bonding metal layer has a bonding temperature higher than that of the first bonding metal layer.
摘要翻译：公开了一种碱金属电池，包括：基板，其形成有从一个面渗透到另一个面的开口; 粘合到所述基板的另一面的第一透明基板; 以及与基板的一个面接合的第二透明基板，其中在基板的开口部中将碱金属密封在由第一透明基板和第二透明基板包围的空间内，其中，在基板和第二透明基板基板，该空间被第一接合金属形成的第一接合金属层和由第二接合金属形成的第二接合金属层之间的接合包围，并且其中第二接合金属层的接合温度高于第一接合金属层。

3. 发明授权

US07590159B2 Surface-emission laser diode operable in the wavelength band of 1.1-1.7 micrometers and optical telecommunication system using such a laser diode 有权
标题翻译：表面发射激光二极管可在1.1-1.7微米的波长范围内工作，光通信系统采用这种激光二极管
公开(公告)号：US07590159B2
公开(公告)日：2009-09-15
申请号：US11759615
申请日：2007-06-07
申请人： Naoto Jikutani , Shunichi Sato , Takashi Takahashi , Akihiro Itoh , Takuro Sekiya , Akira Sakurai , Masayoshi Katoh , Teruyuki Furuta , Kazuya Miyagaki , Ken Kanai , Atsuyuki Watada , Koei Suzuki , Satoru Sugawara , Shinji Satoh , Shuuichi Hikichi
发明人： Naoto Jikutani , Shunichi Sato , Takashi Takahashi , Akihiro Itoh , Takuro Sekiya , Akira Sakurai , Masayoshi Katoh , Teruyuki Furuta , Kazuya Miyagaki , Ken Kanai , Atsuyuki Watada , Koei Suzuki , Satoru Sugawara , Shinji Satoh , Shuuichi Hikichi
IPC分类号： H01S5/00
CPC分类号： G02B5/285 , B82Y20/00 , G02B5/0833 , G02B6/4202 , G02B6/4214 , G02B6/4246 , G02B6/43 , H01L2224/48091 , H01L2924/12044 , H01S5/0014 , H01S5/005 , H01S5/02248 , H01S5/02284 , H01S5/02296 , H01S5/0262 , H01S5/0264 , H01S5/0683 , H01S5/18308 , H01S5/18311 , H01S5/18358 , H01S5/3215 , H01S5/34306 , H01S5/423 , H01S2301/173 , H01L2924/00014 , H01L2924/00
摘要： A surface-emission laser diode includes a distributed Bragg reflector tuned to wavelength of 1.1 μm or longer, wherein the distributed Bragg reflector includes an alternate repetition of a low-refractive index layer and a high-refractive index layer, with a heterospike buffer layer having an intermediate refractive index interposed therebetween with a thickness in the range of 5-50 nm.
摘要翻译：表面发射激光二极管包括调谐到波长为1.1μm或更长的分布布拉格反射器，其中分布布拉格反射器包括低折射率层和高折射率层的交替重复，其中异相缓冲层具有插入其间的中间折射率，厚度在5-50nm的范围内。

4. 发明申请

US20080043796A1 SURFACE-EMISSION LASER DIODE OPERABLE IN THE WAVELENGTH BAND OF 1.1-1.7 MICROMETERS AND OPTICAL TELECOMMUNICATION SYSTEM USING SUCH A LASER DIODE 有权
标题翻译：表面发射激光二极管在使用这种激光二极管的1.1-1.7微米波段和光电信系统的波长带
公开(公告)号：US20080043796A1
公开(公告)日：2008-02-21
申请号：US11759615
申请日：2007-06-07
申请人： Naoto JIKUTANI , Shunichi Sato , Takashi Takahashi , Akihiro Itoh , Takuro Sekiya , Akira Sakurai , Masayoshi Katoh , Teruyuki Furuta , Kazuya Miyagaki , Ken Kanai , Atsuyuki Watada , Koei Suzuki , Satoru Sugawara , Shinji Satoh , Shuuichi Hikichi
发明人： Naoto JIKUTANI , Shunichi Sato , Takashi Takahashi , Akihiro Itoh , Takuro Sekiya , Akira Sakurai , Masayoshi Katoh , Teruyuki Furuta , Kazuya Miyagaki , Ken Kanai , Atsuyuki Watada , Koei Suzuki , Satoru Sugawara , Shinji Satoh , Shuuichi Hikichi
IPC分类号： H01S5/125 , G02B5/18
CPC分类号： G02B5/285 , B82Y20/00 , G02B5/0833 , G02B6/4202 , G02B6/4214 , G02B6/4246 , G02B6/43 , H01L2224/48091 , H01L2924/12044 , H01S5/0014 , H01S5/005 , H01S5/02248 , H01S5/02284 , H01S5/02296 , H01S5/0262 , H01S5/0264 , H01S5/0683 , H01S5/18308 , H01S5/18311 , H01S5/18358 , H01S5/3215 , H01S5/34306 , H01S5/423 , H01S2301/173 , H01L2924/00014 , H01L2924/00
摘要： A surface-emission laser diode includes a distributed Bragg reflector tuned to wavelength of 1.1 μm or longer, wherein the distributed Bragg reflector includes an alternate repetition of a low-refractive index layer and a high-refractive index layer, with a heterospike buffer layer having an intermediate refractive index interposed therebetween with a thickness in the range of 5-50 nm.
摘要翻译：表面发射激光二极管包括调谐到波长为1.1μm或更长的分布布拉格反射器，其中分布布拉格反射器包括低折射率层和高折射率层的交替重复，其中异相缓冲层具有插入其间的中间折射率，厚度在5-50nm的范围内。

5. 发明授权

US07245647B2 Surface-emission laser diode operable in the wavelength band of 1.1-1.7mum and optical telecommunication system using such a laser diode 有权
标题翻译：表面发射激光二极管可在1.1-1.7μm的波长范围内工作，光通信系统采用这种激光二极管
公开(公告)号：US07245647B2
公开(公告)日：2007-07-17
申请号：US10697035
申请日：2003-10-31
申请人： Naoto Jikutani , Shunichi Sato , Takashi Takahashi , Akihiro Itoh , Takuro Sekiya , Akira Sakurai , Masayoshi Katoh , Teruyuki Furuta , Kazuya Miyagaki , Ken Kanai , Atsuyuki Watada , Koei Suzuki , Satoru Sugawara , Shinji Satoh , Shuuichi Hikichi
发明人： Naoto Jikutani , Shunichi Sato , Takashi Takahashi , Akihiro Itoh , Takuro Sekiya , Akira Sakurai , Masayoshi Katoh , Teruyuki Furuta , Kazuya Miyagaki , Ken Kanai , Atsuyuki Watada , Koei Suzuki , Satoru Sugawara , Shinji Satoh , Shuuichi Hikichi
IPC分类号： H01S5/00 , H01S3/08
CPC分类号： G02B6/12007 , B82Y20/00 , G02B6/3821 , G02B6/4201 , G02B6/421 , G02B6/4249 , H01L2224/48091 , H01S5/0071 , H01S5/02284 , H01S5/0262 , H01S5/0683 , H01S5/18313 , H01S5/18358 , H01S5/305 , H01S5/3054 , H01S5/3201 , H01S5/3215 , H01S5/34306 , H01S5/423 , H01S2301/176 , H01S2301/18 , H01S2304/04 , H01L2924/00014
摘要： A surface-emission laser diode includes a distributed Bragg reflector tuned to wavelength of 1.1 μm or longer, wherein the distributed Bragg reflector includes an alternate repetition of a low-refractive index layer and a high-refractive index layer, with a heterospike buffer layer having an intermediate refractive index interposed therebetween with a thickness in the range of 5–50 nm.
摘要翻译：表面发射激光二极管包括调谐到波长为1.1μm或更长的分布布拉格反射器，其中分布布拉格反射器包括低折射率层和高折射率层的交替重复，其中异相缓冲层具有插入其间的中间折射率，厚度在5-50nm的范围内。

6. 发明授权

US06975663B2 Surface-emission laser diode operable in the wavelength band of 1.1-7μm and optical telecommunication system using such a laser diode 有权
标题翻译：表面发射激光二极管可工作在1.1-7μm的波长带和使用这种激光二极管的光通信系统
公开(公告)号：US06975663B2
公开(公告)日：2005-12-13
申请号：US10085204
申请日：2002-02-26
申请人： Takuro Sekiya , Akira Sakurai , Masayoshi Katoh , Teruyuki Furuta , Kazuya Miyagaki , Ken Kanai , Atsuyuki Watada , Shunichi Sato , Koei Suzuki , Satoru Sugawara , Shinji Satoh , Shuuichi Hikichi , Naoto Jikutani , Takashi Takahashi , Akihiro Itoh
发明人： Takuro Sekiya , Akira Sakurai , Masayoshi Katoh , Teruyuki Furuta , Kazuya Miyagaki , Ken Kanai , Atsuyuki Watada , Shunichi Sato , Koei Suzuki , Satoru Sugawara , Shinji Satoh , Shuuichi Hikichi , Naoto Jikutani , Takashi Takahashi , Akihiro Itoh
IPC分类号： H01S5/022 , H01S5/183 , H01S5/323 , H01S5/42 , H01S3/08 , H01S5/00
CPC分类号： H01S5/18361 , H01L2224/48091 , H01S5/0071 , H01S5/02284 , H01S5/0262 , H01S5/0264 , H01S5/0683 , H01S5/18313 , H01S5/18358 , H01S5/32366 , H01S5/423 , H01S2301/173 , H01L2924/00014
摘要： A surface-emission laser diode includes a distributed Bragg reflector tuned to wavelength of 1.1 μm or longer, wherein the distributed Bragg reflector includes an alternate repetition of a low-refractive index layer and a high-refractive index layer, with a heterospike buffer layer having an intermediate refractive index interposed therebetween with a thickness in the range of 5-50 nm.
摘要翻译：表面发射激光二极管包括调谐到波长为1.1μm或更长的分布布拉格反射器，其中分布布拉格反射器包括低折射率层和高折射率层的交替重复，其中异相缓冲层具有插入其间的中间折射率，厚度在5-50nm的范围内。

7. 发明申请

US20060093010A1 Surface-emission laser diode operable in the wavelength band of 1.1-1.7 um and optical telecommunication system using such a laser diode 审中-公开
标题翻译：表面发射激光二极管可在1.1-1.7微米的波长范围内工作，光通信系统采用这种激光二极管
公开(公告)号：US20060093010A1
公开(公告)日：2006-05-04
申请号：US11220826
申请日：2005-09-08
申请人： Takuro Sekiya , Akira Sakurai , Masayoshi Katoh , Teruyuki Furuta , Kazuya Miyagaki , Ken Kanai , Atsuyuki Watada , Shunichi Sato , Koei Suzuki , Satoru Sugawara , Shinji Satoh , Shuuichi Hikichi , Naoto Jikutani , Takashi Takahashi , Akihiro Itoh
发明人： Takuro Sekiya , Akira Sakurai , Masayoshi Katoh , Teruyuki Furuta , Kazuya Miyagaki , Ken Kanai , Atsuyuki Watada , Shunichi Sato , Koei Suzuki , Satoru Sugawara , Shinji Satoh , Shuuichi Hikichi , Naoto Jikutani , Takashi Takahashi , Akihiro Itoh
IPC分类号： H01S3/08 , H01S5/00
CPC分类号： H01S5/18361 , H01L2224/48091 , H01S5/0071 , H01S5/02284 , H01S5/0262 , H01S5/0264 , H01S5/0683 , H01S5/18313 , H01S5/18358 , H01S5/32366 , H01S5/423 , H01S2301/173 , H01L2924/00014
摘要： A surface-emission laser diode includes a distributed Bragg reflector tuned to a wavelength of 1.1 μm or longer, wherein the distributed Bragg reflector includes an alternate repetition of a low-refractive index layer and a high-refractive index layer, with a heterospike buffer layer having an intermediate refractive index interposed therebetween with a thickness in the range of 5-50 nm
摘要翻译：表面发射激光二极管包括调谐到波长为1.1μm或更长的分布布拉格反射器，其中分布布拉格反射器包括低折射率层和高折射率层的交替重复，具有异质缓冲层其间具有中间折射率，其厚度在5-50nm的范围内

8. 发明授权

US06917345B2 Small antenna and manufacturing method thereof 失效
标题翻译：小型天线及其制造方法
公开(公告)号：US06917345B2
公开(公告)日：2005-07-12
申请号：US10034847
申请日：2001-12-21
申请人： Hiroki Hamada , Yoshikazu Kamei , Masayuki Ishiwa , Isao Tomomatsu , Takahiro Ueno , Shinji Satoh
发明人： Hiroki Hamada , Yoshikazu Kamei , Masayuki Ishiwa , Isao Tomomatsu , Takahiro Ueno , Shinji Satoh
IPC分类号： H01Q13/08 , B29C45/16 , H01Q1/24 , H01Q1/38
CPC分类号： B29C45/1671 , H01Q1/243 , H01Q1/38
摘要： A small antenna comprises an antenna conductor, and a dielectric chip formed at surroundings of the antenna conductor by a plurality of resin moldings.
摘要翻译：小型天线包括天线导体和通过多个树脂模制件形成在天线导体的周围的电介质芯片。

9. 发明授权

US06894646B2 Line-shaped antenna 失效
标题翻译：线形天线
公开(公告)号：US06894646B2
公开(公告)日：2005-05-17
申请号：US10150138
申请日：2002-05-15
申请人： Takanori Washiro , Isao Tomomatsu , Hiroki Hamada , Shinji Satoh
发明人： Takanori Washiro , Isao Tomomatsu , Hiroki Hamada , Shinji Satoh
IPC分类号： H01Q11/16 , H01Q1/38
CPC分类号： H01Q1/38 , Y10T29/49016
摘要： A line-shaped comprises an antenna element in which a strip-shaped conductor is bent in a width direction of a strip, and a chamfered portion is provided on an outer edge of a bent portion of the strip-shaped conductor.
摘要翻译：线状包括天线元件，其中带状导体沿条带的宽度方向弯曲，并且倒角部分设置在条形导体的弯曲部分的外边缘上。

10. 发明授权

US06724347B2 Chip antenna and method of manufacturing the same 失效
标题翻译：芯片天线及其制造方法
公开(公告)号：US06724347B2
公开(公告)日：2004-04-20
申请号：US10178328
申请日：2002-06-20
申请人： Isao Tomomatsu , Takahiro Ueno , Mitsuo Yoshino , Shinji Satoh , Hiroki Hamada
发明人： Isao Tomomatsu , Takahiro Ueno , Mitsuo Yoshino , Shinji Satoh , Hiroki Hamada
IPC分类号： H01Q138
CPC分类号： H01Q1/2283 , B29C45/0025 , B29C45/14639 , B29L2031/3456 , H01Q1/22 , H01Q1/38 , H01Q1/40 , H01Q9/40 , H01Q9/42 , H01Q11/04
摘要： Of margins of a resin molding with an antenna element buried therein which lie around the antenna element, a margin on that side of the resin molding where a gate mark remains is made larger than margins on other sides where there is no gate mark. Particularly, when the antenna element has a line antenna portion and a capacitance-adding portion provided at a distal end of the line antenna portion, the resin molding is injection-molded in such a way that a gate mark can be formed on that side where the capacitance-adding portion is located. Those portions of the resin molding where the terminal portions are led out are dented from levels of portions around those portions. This provides a chip antenna which has a simple structure with a high mechanical strength and does not prevent separation or cracking from occurring in the resin molding in which the antenna element is buried and a method of manufacturing the chip antenna.
摘要翻译：在埋设在天线元件周围的天线元件的树脂模制品的边缘处，留下栅极标记的树脂模制品侧的边缘大于没有栅极标记的另一侧的边缘。特别地，当天线元件具有线天线部分和设置在线天线部分的远端处的电容增加部分时，树脂模制件以这样的方式被注射成型，即可以在那一侧形成栅极标记电容添加部分被定位。端子部分被引出的树脂模塑件的那些部分由这些部分周围的部分的凹陷凹陷。这提供了具有机械强度高的简单结构的芯片天线，并且不防止在埋设天线元件的树脂模制件中发生分离或破裂以及制造芯片天线的方法。

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