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1. 发明授权

US06917345B2 Small antenna and manufacturing method thereof 失效
标题翻译：小型天线及其制造方法
公开(公告)号：US06917345B2
公开(公告)日：2005-07-12
申请号：US10034847
申请日：2001-12-21
申请人： Hiroki Hamada , Yoshikazu Kamei , Masayuki Ishiwa , Isao Tomomatsu , Takahiro Ueno , Shinji Satoh
发明人： Hiroki Hamada , Yoshikazu Kamei , Masayuki Ishiwa , Isao Tomomatsu , Takahiro Ueno , Shinji Satoh
IPC分类号： H01Q13/08 , B29C45/16 , H01Q1/24 , H01Q1/38
CPC分类号： B29C45/1671 , H01Q1/243 , H01Q1/38
摘要： A small antenna comprises an antenna conductor, and a dielectric chip formed at surroundings of the antenna conductor by a plurality of resin moldings.
摘要翻译：小型天线包括天线导体和通过多个树脂模制件形成在天线导体的周围的电介质芯片。

2. 发明授权

US06724347B2 Chip antenna and method of manufacturing the same 失效
标题翻译：芯片天线及其制造方法
公开(公告)号：US06724347B2
公开(公告)日：2004-04-20
申请号：US10178328
申请日：2002-06-20
申请人： Isao Tomomatsu , Takahiro Ueno , Mitsuo Yoshino , Shinji Satoh , Hiroki Hamada
发明人： Isao Tomomatsu , Takahiro Ueno , Mitsuo Yoshino , Shinji Satoh , Hiroki Hamada
IPC分类号： H01Q138
CPC分类号： H01Q1/2283 , B29C45/0025 , B29C45/14639 , B29L2031/3456 , H01Q1/22 , H01Q1/38 , H01Q1/40 , H01Q9/40 , H01Q9/42 , H01Q11/04
摘要： Of margins of a resin molding with an antenna element buried therein which lie around the antenna element, a margin on that side of the resin molding where a gate mark remains is made larger than margins on other sides where there is no gate mark. Particularly, when the antenna element has a line antenna portion and a capacitance-adding portion provided at a distal end of the line antenna portion, the resin molding is injection-molded in such a way that a gate mark can be formed on that side where the capacitance-adding portion is located. Those portions of the resin molding where the terminal portions are led out are dented from levels of portions around those portions. This provides a chip antenna which has a simple structure with a high mechanical strength and does not prevent separation or cracking from occurring in the resin molding in which the antenna element is buried and a method of manufacturing the chip antenna.
摘要翻译：在埋设在天线元件周围的天线元件的树脂模制品的边缘处，留下栅极标记的树脂模制品侧的边缘大于没有栅极标记的另一侧的边缘。特别地，当天线元件具有线天线部分和设置在线天线部分的远端处的电容增加部分时，树脂模制件以这样的方式被注射成型，即可以在那一侧形成栅极标记电容添加部分被定位。端子部分被引出的树脂模塑件的那些部分由这些部分周围的部分的凹陷凹陷。这提供了具有机械强度高的简单结构的芯片天线，并且不防止在埋设天线元件的树脂模制件中发生分离或破裂以及制造芯片天线的方法。

3. 发明授权

US06894646B2 Line-shaped antenna 失效
标题翻译：线形天线
公开(公告)号：US06894646B2
公开(公告)日：2005-05-17
申请号：US10150138
申请日：2002-05-15
申请人： Takanori Washiro , Isao Tomomatsu , Hiroki Hamada , Shinji Satoh
发明人： Takanori Washiro , Isao Tomomatsu , Hiroki Hamada , Shinji Satoh
IPC分类号： H01Q11/16 , H01Q1/38
CPC分类号： H01Q1/38 , Y10T29/49016
摘要： A line-shaped comprises an antenna element in which a strip-shaped conductor is bent in a width direction of a strip, and a chamfered portion is provided on an outer edge of a bent portion of the strip-shaped conductor.
摘要翻译：线状包括天线元件，其中带状导体沿条带的宽度方向弯曲，并且倒角部分设置在条形导体的弯曲部分的外边缘上。

4. 发明授权

US07772174B2 Polymer-stripping composition 失效
标题翻译：聚合物剥离组合物
公开(公告)号：US07772174B2
公开(公告)日：2010-08-10
申请号：US11503021
申请日：2006-08-11
申请人： Shinji Satoh
发明人： Shinji Satoh
IPC分类号： C11D7/50
CPC分类号： G03F7/425 , G03F7/0007
摘要： Compositions useful for removing a polymer material from a substrate, such as an electronic device, and methods of using such compositions are provided. These compositions and methods reduce the corrosion of any underlying metal surfaces, and are particularly suited to remove polymer residues from electronic device substrates.
摘要翻译：提供了可用于从诸如电子设备的基底去除聚合物材料的组合物，以及使用这些组合物的方法。这些组合物和方法减少任何下面的金属表面的腐蚀，并且特别适用于从电子器件基底去除聚合物残余物。

5. 发明授权

US07590159B2 Surface-emission laser diode operable in the wavelength band of 1.1-1.7 micrometers and optical telecommunication system using such a laser diode 有权
标题翻译：表面发射激光二极管可在1.1-1.7微米的波长范围内工作，光通信系统采用这种激光二极管
公开(公告)号：US07590159B2
公开(公告)日：2009-09-15
申请号：US11759615
申请日：2007-06-07
申请人： Naoto Jikutani , Shunichi Sato , Takashi Takahashi , Akihiro Itoh , Takuro Sekiya , Akira Sakurai , Masayoshi Katoh , Teruyuki Furuta , Kazuya Miyagaki , Ken Kanai , Atsuyuki Watada , Koei Suzuki , Satoru Sugawara , Shinji Satoh , Shuuichi Hikichi
发明人： Naoto Jikutani , Shunichi Sato , Takashi Takahashi , Akihiro Itoh , Takuro Sekiya , Akira Sakurai , Masayoshi Katoh , Teruyuki Furuta , Kazuya Miyagaki , Ken Kanai , Atsuyuki Watada , Koei Suzuki , Satoru Sugawara , Shinji Satoh , Shuuichi Hikichi
IPC分类号： H01S5/00
CPC分类号： G02B5/285 , B82Y20/00 , G02B5/0833 , G02B6/4202 , G02B6/4214 , G02B6/4246 , G02B6/43 , H01L2224/48091 , H01L2924/12044 , H01S5/0014 , H01S5/005 , H01S5/02248 , H01S5/02284 , H01S5/02296 , H01S5/0262 , H01S5/0264 , H01S5/0683 , H01S5/18308 , H01S5/18311 , H01S5/18358 , H01S5/3215 , H01S5/34306 , H01S5/423 , H01S2301/173 , H01L2924/00014 , H01L2924/00
摘要： A surface-emission laser diode includes a distributed Bragg reflector tuned to wavelength of 1.1 μm or longer, wherein the distributed Bragg reflector includes an alternate repetition of a low-refractive index layer and a high-refractive index layer, with a heterospike buffer layer having an intermediate refractive index interposed therebetween with a thickness in the range of 5-50 nm.
摘要翻译：表面发射激光二极管包括调谐到波长为1.1μm或更长的分布布拉格反射器，其中分布布拉格反射器包括低折射率层和高折射率层的交替重复，其中异相缓冲层具有插入其间的中间折射率，厚度在5-50nm的范围内。

6. 发明申请

US20080043796A1 SURFACE-EMISSION LASER DIODE OPERABLE IN THE WAVELENGTH BAND OF 1.1-1.7 MICROMETERS AND OPTICAL TELECOMMUNICATION SYSTEM USING SUCH A LASER DIODE 有权
标题翻译：表面发射激光二极管在使用这种激光二极管的1.1-1.7微米波段和光电信系统的波长带
公开(公告)号：US20080043796A1
公开(公告)日：2008-02-21
申请号：US11759615
申请日：2007-06-07
申请人： Naoto JIKUTANI , Shunichi Sato , Takashi Takahashi , Akihiro Itoh , Takuro Sekiya , Akira Sakurai , Masayoshi Katoh , Teruyuki Furuta , Kazuya Miyagaki , Ken Kanai , Atsuyuki Watada , Koei Suzuki , Satoru Sugawara , Shinji Satoh , Shuuichi Hikichi
发明人： Naoto JIKUTANI , Shunichi Sato , Takashi Takahashi , Akihiro Itoh , Takuro Sekiya , Akira Sakurai , Masayoshi Katoh , Teruyuki Furuta , Kazuya Miyagaki , Ken Kanai , Atsuyuki Watada , Koei Suzuki , Satoru Sugawara , Shinji Satoh , Shuuichi Hikichi
IPC分类号： H01S5/125 , G02B5/18
CPC分类号： G02B5/285 , B82Y20/00 , G02B5/0833 , G02B6/4202 , G02B6/4214 , G02B6/4246 , G02B6/43 , H01L2224/48091 , H01L2924/12044 , H01S5/0014 , H01S5/005 , H01S5/02248 , H01S5/02284 , H01S5/02296 , H01S5/0262 , H01S5/0264 , H01S5/0683 , H01S5/18308 , H01S5/18311 , H01S5/18358 , H01S5/3215 , H01S5/34306 , H01S5/423 , H01S2301/173 , H01L2924/00014 , H01L2924/00
摘要： A surface-emission laser diode includes a distributed Bragg reflector tuned to wavelength of 1.1 μm or longer, wherein the distributed Bragg reflector includes an alternate repetition of a low-refractive index layer and a high-refractive index layer, with a heterospike buffer layer having an intermediate refractive index interposed therebetween with a thickness in the range of 5-50 nm.
摘要翻译：表面发射激光二极管包括调谐到波长为1.1μm或更长的分布布拉格反射器，其中分布布拉格反射器包括低折射率层和高折射率层的交替重复，其中异相缓冲层具有插入其间的中间折射率，厚度在5-50nm的范围内。

7. 发明授权

US07245647B2 Surface-emission laser diode operable in the wavelength band of 1.1-1.7mum and optical telecommunication system using such a laser diode 有权
标题翻译：表面发射激光二极管可在1.1-1.7μm的波长范围内工作，光通信系统采用这种激光二极管
公开(公告)号：US07245647B2
公开(公告)日：2007-07-17
申请号：US10697035
申请日：2003-10-31
申请人： Naoto Jikutani , Shunichi Sato , Takashi Takahashi , Akihiro Itoh , Takuro Sekiya , Akira Sakurai , Masayoshi Katoh , Teruyuki Furuta , Kazuya Miyagaki , Ken Kanai , Atsuyuki Watada , Koei Suzuki , Satoru Sugawara , Shinji Satoh , Shuuichi Hikichi
发明人： Naoto Jikutani , Shunichi Sato , Takashi Takahashi , Akihiro Itoh , Takuro Sekiya , Akira Sakurai , Masayoshi Katoh , Teruyuki Furuta , Kazuya Miyagaki , Ken Kanai , Atsuyuki Watada , Koei Suzuki , Satoru Sugawara , Shinji Satoh , Shuuichi Hikichi
IPC分类号： H01S5/00 , H01S3/08
CPC分类号： G02B6/12007 , B82Y20/00 , G02B6/3821 , G02B6/4201 , G02B6/421 , G02B6/4249 , H01L2224/48091 , H01S5/0071 , H01S5/02284 , H01S5/0262 , H01S5/0683 , H01S5/18313 , H01S5/18358 , H01S5/305 , H01S5/3054 , H01S5/3201 , H01S5/3215 , H01S5/34306 , H01S5/423 , H01S2301/176 , H01S2301/18 , H01S2304/04 , H01L2924/00014
摘要： A surface-emission laser diode includes a distributed Bragg reflector tuned to wavelength of 1.1 μm or longer, wherein the distributed Bragg reflector includes an alternate repetition of a low-refractive index layer and a high-refractive index layer, with a heterospike buffer layer having an intermediate refractive index interposed therebetween with a thickness in the range of 5–50 nm.
摘要翻译：表面发射激光二极管包括调谐到波长为1.1μm或更长的分布布拉格反射器，其中分布布拉格反射器包括低折射率层和高折射率层的交替重复，其中异相缓冲层具有插入其间的中间折射率，厚度在5-50nm的范围内。

8. 发明授权

US06243295B1 Nonvolatile semiconductor memory 失效
标题翻译：非易失性半导体存储器
公开(公告)号：US06243295B1
公开(公告)日：2001-06-05
申请号：US09526849
申请日：2000-03-16
申请人： Shinji Satoh
发明人： Shinji Satoh
IPC分类号： G11C1604
CPC分类号： H01L27/11521 , G11C16/0483 , H01L27/115 , H01L27/11524
摘要： A memory cell in a NAND cell unit is constructed by a main transistor and parasitic transistor, which share a floating gate electrode and control gate electrode, and are connected in series with each other. The parasitic transistor is formed at an edge portion of the main transistor and, more particularly, an edge portion of the floating gate electrode. The threshold value of the parasitic transistor is higher than that of the main transistor. The parasitic transistor is formed in an offset area defined by the space between the edge portion of the floating gate electrode and the source/drain region. The offset area can be provided by forming a spacer on side wall portions of the floating gate electrode and control gate electrode.
摘要翻译： NAND单元单元中的存储单元由共用浮置栅电极和控制栅电极的主晶体管和寄生晶体管构成，并且彼此串联连接。寄生晶体管形成在主晶体管的边缘部分，更具体地，形成在浮栅电极的边缘部分。寄生晶体管的阈值高于主晶体管的阈值。寄生晶体管形成在由浮置栅极的边缘部分和源极/漏极区域之间的空间限定的偏移区域中。可以通过在浮栅电极和控制栅电极的侧壁部分上形成间隔物来提供偏移区域。

9. 发明授权

US6117729A Nonvolatile semiconductor storage device and its manufacturing method 失效
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US6117729A
公开(公告)日：2000-09-12
申请号：US97152
申请日：1998-06-12
申请人： Hirohisa Iizuka , Shinji Satoh , Riichiro Shirota
发明人： Hirohisa Iizuka , Shinji Satoh , Riichiro Shirota
IPC分类号： H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
CPC分类号： H01L27/11521 , H01L27/115 , H01L27/11524
摘要： High-concentrated impurity regions 24 for isolation of bit line contacts, having the same conduction type as that of a semiconductor substrate 10, are formed in the semiconductor substrate 10 under field oxide films 12 in locations between individual drain regions of selection transistors provided in a plurality of NAND memory cells, respectively. The high-concentrated impurity regions 24 for isolation of bit line contacts are made in a common step of making high-concentrated impurity regions 26 for isolation of memory transistors, by implanting impurities into the semiconductor substrate 10 through slits 20a, 20b made in a first conductive film 20. The high-concentrated impurity regions 24 prevent the punch-through phenomenon between bit line contacts 42a, and improve the resistivity to voltage between the bit line contacts 42a.
摘要翻译：用于隔离具有与半导体衬底10相同的导电类型的位线接触的高浓度杂质区24形成在半导体衬底10中的场氧化物膜12下的位于选择晶体管的各漏极区之间的位置多个NAND存储器单元。用于隔离位线触点的高浓度杂质区24是通过将杂质注入到半导体衬底10中的狭缝20a，20b以第一个方式制造的共同步骤制成用于隔离存储晶体管的高浓度杂质区26 高浓度杂质区24防止位线触点42a之间的穿通现象，并提高位线触点42a之间的电压电阻率。

10. 发明授权

US5530855A Replicating a database by the sequential application of hierarchically sorted log records 失效
标题翻译：通过顺序应用分层排序的日志记录来复制数据库
公开(公告)号：US5530855A
公开(公告)日：1996-06-25
申请号：US959849
申请日：1992-10-13
申请人： Shinji Satoh , Yuji Takase
发明人： Shinji Satoh , Yuji Takase
IPC分类号： G06F12/00 , G06F11/14 , G06F11/20 , G06F17/30
CPC分类号： G06F11/2071 , G06F11/2064 , Y10S707/99937 , Y10S707/99952 , Y10S707/99953
摘要： A method and system are provided for continuously maintaining replicas of an active database in a backup system for disaster recovery purposes. Redo records transmitted from an active system are received into a dataspace work area in a backup system memory. Redo records in the work area for an uncommitted database transaction are grouped together. When a transaction becomes a committed transaction, the redo records for the transaction are sorted with redo records from other committed transactions according to database, block number within a database, offset location within a block, and sequence of occurrence. A plurality of update blocks from a backup database are read into a buffer in the backup system memory. The sorted redo records are sequentially applied to corresponding data records in the update blocks. The update blocks are then immediately written back to the database.
摘要翻译：提供了一种方法和系统，用于在备份系统中持续维护活动数据库的副本以进行灾难恢复。从活动系统发送的重做记录被接收到备份系统存储器中的数据空间工作区。未提交的数据库事务的工作区中的重做记录被分组在一起。当事务成为承诺事务时，根据数据库，数据库中的块号，块内的偏移位置以及发生顺序，将事务的重做记录与其他已提交事务的重做记录进行排序。来自备份数据库的多个更新块被读入备用系统存储器中的缓冲器。排序的重做记录被顺序应用于更新块中的相应数据记录。然后将更新块立即写回数据库。

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