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1. 发明授权

US4229465A Cyanopyrrole derivatives 失效
标题翻译：氰吡咯衍生物
公开(公告)号：US4229465A
公开(公告)日：1980-10-21
申请号：US55321
申请日：1979-07-06
申请人： Kazuhiko Ohkuma , Hideo Takagi , Akira Nakata , Shogo Kosaka
发明人： Kazuhiko Ohkuma , Hideo Takagi , Akira Nakata , Shogo Kosaka
IPC分类号： A01N43/36 , A01P3/00 , C07D207/34 , C07D207/44 , A61K31/40
CPC分类号： C07D207/34 , A01N43/36
摘要： Compounds of the general formula ##STR1## wherein X is halogen, lower alkyl or lower haloalkyl, andn is 0, 1 or 2;are outstanding effective fungicides.
摘要翻译：通式的化合物，其中X为卤素，低级烷基或低级卤代烷基，n为0,1或2; 是优秀的有效杀菌剂。

2. 发明授权

US4326881A Phenylpyrol derivatives 失效
标题翻译：苯基苯酚衍生物
公开(公告)号：US4326881A
公开(公告)日：1982-04-27
申请号：US970153
申请日：1978-12-18
申请人： Akiyoshi Ueda , Hideo Takagi , Kazuhiko Ohkuma
发明人： Akiyoshi Ueda , Hideo Takagi , Kazuhiko Ohkuma
IPC分类号： A01N43/36 , C07D207/34 , C07D207/323
CPC分类号： C07D207/34 , A01N43/36
摘要： Compounds of the general formula ##STR1## wherein Xn is 2-Cl, 3-Cl, 2,3-Cl.sub.2 or 3-CF.sub.3, andR is hydrogen or acetyl,with the proviso that Xn is 2,3-Cl.sub.2 in the case of R being hydrogen, are outstanding effective fungicides.
摘要翻译：其中Xn为2-Cl，3-Cl，2,3-Cl2或3-CF3的通式为“IMAGE”的化合物，R为氢或乙酰基，条件是Xn为2,3-Cl2 的R是氢，是杰出的有效杀真菌剂。

3. 发明授权

US08083263B2 Tank-carrying vehicle rear body structure 有权
标题翻译：载车车身后部结构
公开(公告)号：US08083263B2
公开(公告)日：2011-12-27
申请号：US12473961
申请日：2009-05-28
申请人： Hiroyuki Yamanami , Hideo Takagi , Tsutomu Suzuki , Yusuke Furukawa
发明人： Hiroyuki Yamanami , Hideo Takagi , Tsutomu Suzuki , Yusuke Furukawa
IPC分类号： B62D21/15
CPC分类号： B62D21/152 , B60K15/07 , B60K2015/0638
摘要： A gas tank is protected by absorbing collision energy with the rear of a vehicle. Rear-side tank frame supports the tank at a position below a rear side member. The front portion of the tank frame is secured on rear side member, while the rear portion is directly or indirectly secured thereto. A torsion beam is arranged ahead of the tank frame. When an input load is exerted at rear end portions of the rear side member and tank frame toward the front of the vehicle, rear side member is folded to a V shape, upward with respect to the vehicle body. The tank frame collides with the torsion beam, and the front portion of the tank frame is pushed upward along with rear side member.
摘要翻译：通过与车辆的后部吸收碰撞能量来保护气罐。后侧油箱架将油箱支撑在后侧构件的下方。罐框架的前部固定在后侧部件上，而后部直接或间接固定在其上。扭力梁布置在油箱框架的前方。当后侧构件和油箱框架的后端部向车辆前方施加输入负荷时，后侧构件相对于车身向上折叠成V形。油箱架与扭力梁碰撞，油箱架的前部与后侧构件一起向上推。

4. 发明授权

US07840128B2 Image-blur compensating device and image pickup apparatus 有权
标题翻译：图像模糊补偿装置和图像拾取装置
公开(公告)号：US07840128B2
公开(公告)日：2010-11-23
申请号：US12141355
申请日：2008-06-18
申请人： Hideo Takagi , Tatsuyuki Takahashi , Toshifumi Takaoka , Tomoya Takei
发明人： Hideo Takagi , Tatsuyuki Takahashi , Toshifumi Takaoka , Tomoya Takei
IPC分类号： G03B17/00
CPC分类号： G03B17/00 , H04N5/23248 , H04N5/23258 , H04N5/23287
摘要： An image-blur compensating device includes an optical component configured to compensate blur in an image, an actuator driving the optical component, a displacement detector detecting a position of the optical component changed by the actuator, an angular velocity detector detecting an angular velocity applied from outside, and a target displacement calculator calculating a driving amount when the actuator has driven the optical axis changing unit based on the angular velocity detected by the angular velocity detector and the position detected by the displacement detector. The target displacement calculator then obtains, as a result of compensating an amount of influence on the position of the optical component, a driving amount when driving the actuator based on the calculated driving amount. The image-blur compensating device further includes a driver driving the actuator based on the driving amount calculated by the target displacement calculator.
摘要翻译：图像模糊补偿装置包括被配置为补偿图像中的模糊的光学部件，驱动光学部件的致动器，检测由致动器改变的光学部件的位置的位移检测器，检测从以及目标位移计算器，其计算当致动器基于由角速度检测器检测的角速度和由位移检测器检测的位置而驱动光轴改变单元时的驱动量。目标位移计算器，作为补偿对光学部件的位置的影响量的结果，获得基于计算出的驱动量来驱动致动器的驱动量。图像模糊补偿装置还包括基于由目标位移计算器计算的驾驶量来驱动致动器的驾驶员。

5. 发明申请

US20090309349A1 Tank-Carriyng Vehicle Rear Body Structure 有权
标题翻译： Tank-Carriyng车辆后车身结构
公开(公告)号：US20090309349A1
公开(公告)日：2009-12-17
申请号：US12473961
申请日：2009-05-28
申请人： Hiroyuki Yamanami , Hideo Takagi , Tsutomu Suzuki , Yusuke Furukawa
发明人： Hiroyuki Yamanami , Hideo Takagi , Tsutomu Suzuki , Yusuke Furukawa
IPC分类号： B62D21/15 , B60P3/22
CPC分类号： B62D21/152 , B60K15/07 , B60K2015/0638
摘要： A gas tank is protected by absorbing collision energy with the entirety of a rear portion of a vehicle without using a reinforcement member. This reduces weight and cost. Rear-side tank frame supports the tank at a position below rear side member. The front portion of rear-side tank frame is secured on rear side member, while the rear portion is directly or indirectly secured on rear side member. A torsion beam is arranged ahead of rear-side tank frame with respect to the vehicle body. When an input load is exerted at a rear end portion of the rear side member and a rear end portion of rear-side tank frame toward the front of the vehicle, rear side member is folded to a V-shape, upward with respect to the vehicle body. Rear-side tank frame collides with torsion beam, and the front portion of rear-side tank frame is pushed upward along with rear side member with respect to the vehicle body.
摘要翻译：在不使用加强构件的情况下，通过与车辆的后部的整体吸收碰撞能量来保护气罐。这减轻了重量和成本。后侧油箱架将油箱支撑在后侧构件的下方。后侧箱架的前部固定在后侧部件上，后部直接或间接地固定在后侧部件上。扭力梁相对于车身布置在后侧油箱框架的前方。当后侧构件的后端部和后侧箱架的后端部朝向车辆的前方施加输入负载时，后侧构件相对于前侧构件向上折叠成V字状车身。后侧油箱架与扭转梁碰撞，后侧油箱架的前部与后侧部件相对于车身向上推。

6. 发明申请

US20070187833A1 Method of fabricating semiconductor memory device and semiconductor memory device driver 失效
标题翻译：制造半导体存储器件和半导体存储器件驱动器的方法
公开(公告)号：US20070187833A1
公开(公告)日：2007-08-16
申请号：US11783468
申请日：2007-04-10
申请人： Tatsuya Hashimoto , Toshiyuki Maenosono , Taji Togawa , Takayuki Enda , Hideo Takagi
发明人： Tatsuya Hashimoto , Toshiyuki Maenosono , Taji Togawa , Takayuki Enda , Hideo Takagi
IPC分类号： H01L23/48
CPC分类号： H01L27/11526 , H01L21/02063 , H01L21/31133 , H01L21/31138 , H01L21/321 , H01L21/76801 , H01L21/76814 , H01L21/76834 , H01L24/02 , H01L24/03 , H01L24/05 , H01L27/105 , H01L27/115 , H01L27/11521 , H01L27/11531 , H01L2224/05599 , H01L2224/05624 , H01L2224/05669 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/04941 , H01L2924/05042 , H01L2924/1306 , H01L2924/13091 , H01L2924/30105 , H01L2924/00
摘要： Disclosed is a method of fabricating a semiconductor memory device including the step of irradiating ultraviolet rays on a metal interconnection at a bonding pad part, so that the metal interconnection can be prevented from being corroded because of a corrodent element in the process of erasing charges stored in a charge storage part. An oxide coating film is formed on the surface of the metal interconnection at the bonding pad part, and ultraviolet rays are irradiated onto the oxide coating film for erasing of charges from the floating gate.
摘要翻译：公开了一种制造半导体存储器件的方法，包括在接合焊盘部分的金属互连上照射紫外线的步骤，从而可以防止在消除电荷存储的过程中由于腐蚀元件而腐蚀金属互连在电荷存储部分中。在接合焊盘部分的金属互连的表面上形成氧化物涂膜，并且将紫外线照射到氧化物涂膜上，以从浮动栅极擦除电荷。

7. 发明申请

US20060228899A1 Semiconductor memory device and method for manufacturing semiconductor device 审中-公开
公开(公告)号：US20060228899A1
公开(公告)日：2006-10-12
申请号：US11441237
申请日：2006-05-26
申请人： Hiroyuki Nansei , Manabu Nakamura , Kentaro Sera , Masahiko Higashi , Yukihiro Utsuno , Hideo Takagi , Tatsuya Kajita
发明人： Hiroyuki Nansei , Manabu Nakamura , Kentaro Sera , Masahiko Higashi , Yukihiro Utsuno , Hideo Takagi , Tatsuya Kajita
IPC分类号： H01L21/31 , H01L21/336
CPC分类号： H01L21/0234 , H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/02326 , H01L21/02332 , H01L21/3145 , H01L27/105 , H01L27/11526 , H01L27/11546 , H01L27/11568 , Y10S438/954
摘要： After a lower silicon oxide film is formed on a silicon region, a silicon film is formed on the lower silicon oxide film by, for example, a thermal CVD method. Subsequently, the silicon film is completely nitrided by a plasma nitriding method to be replaced by a silicon nitride film. Subsequently, a surface layer of the silicon nitride film is oxidized by a plasma oxidizing method to be replaced by an upper silicon oxide film. An ONO film as a multilayered insulating film composed of the lower silicon oxide film, the silicon nitride film, and the upper silicon oxide film is formed.

8. 发明授权

US07098147B2 Semiconductor memory device and method for manufacturing semiconductor device 失效
标题翻译：半导体存储器件及半导体器件的制造方法
公开(公告)号：US07098147B2
公开(公告)日：2006-08-29
申请号：US10643967
申请日：2003-08-20
申请人： Hiroyuki Nansei , Manabu Nakamura , Kentaro Sera , Masahiko Higashi , Yukihiro Utsuno , Hideo Takagi , Tatsuya Kajita
发明人： Hiroyuki Nansei , Manabu Nakamura , Kentaro Sera , Masahiko Higashi , Yukihiro Utsuno , Hideo Takagi , Tatsuya Kajita
IPC分类号： H01L21/31
CPC分类号： H01L27/11568 , H01L21/3145 , H01L27/105 , H01L27/11526 , H01L27/11546 , Y10S438/954
摘要： After a lower silicon oxide film is formed on a silicon region, a silicon film is formed on the lower silicon oxide film by, for example, a thermal CVD method. Subsequently, the silicon film is completely nitrided by a plasma nitriding method to be replaced by a silicon nitride film. Subsequently, a surface layer of the silicon nitride film is oxidized by a plasma oxidizing method to be replaced by an upper silicon oxide film. An ONO film as a multilayered insulating film composed of the lower silicon oxide film, the silicon nitride film, and the upper silicon oxide film is formed.
摘要翻译：在硅区域上形成下部氧化硅膜之后，通过例如热CVD法在下部氧化硅膜上形成硅膜。随后，通过等离子体氮化方法将硅膜完全氮化，由氮化硅膜代替。随后，通过等离子体氧化方法氧化氮化硅膜的表面层，以被上部氧化硅膜代替。形成作为由下部氧化硅膜，氮化硅膜和上部氧化硅膜构成的多层绝缘膜的ONO膜。

9. 发明授权

US06299239B1 Vehicle body structure 有权
标题翻译：车体结构
公开(公告)号：US06299239B1
公开(公告)日：2001-10-09
申请号：US09689770
申请日：2000-10-13
申请人： Kouichi Sagawa , Hideo Takagi
发明人： Kouichi Sagawa , Hideo Takagi
IPC分类号： B62D2702
CPC分类号： B62D21/157 , B60N2/4235 , B60N2/42709 , B62D25/025
摘要： A vehicle body structure is provided to ensure a sufficient space in a passenger's room of a vehicle and bear an impact load inputted to the vehicle's part higher than a floor tunnel. The vehicle body structure includes a center pillar 1, a front door, a rear door, a floor panel 4 arranged at the bottom of the passenger's room, a floor tunnel 5 formed to project upward at the center of the floor panel 4 of the vehicle's width direction and also extend in the fore-and-aft direction of the vehicle body, and a passenger's seat 7 arranged on the floor panel 4. The structure further includes a load-direction converting member 28 for transmitting the impact load toward the floor tunnel 5. The load-direction converting member 28 is formed with a lower frame 21a of a seat back frame 21 as the framework of the passenger's seat 7.
摘要翻译：提供车身结构以确保在车辆的乘客室中具有足够的空间并且承受输入到比地板隧道高的车辆部分的冲击载荷。车身结构包括中柱1，前门，后门，布置在乘客室底部的地板镶板4，形成为在车辆的底板4的中心向上突出的地板通道5。宽度方向并且还在车体的前后方向上延伸，以及布置在地板面板4上的乘客座椅7.该结构还包括负载方向转换构件28，用于将冲击载荷传递到地板隧道负载方向转换构件28形成有作为乘客座椅7的框架的座椅靠背框架21的下部框架21a。

10. 发明授权

US07679194B2 Method of fabricating semiconductor memory device and semiconductor memory device driver 失效
标题翻译：制造半导体存储器件和半导体存储器件驱动器的方法
公开(公告)号：US07679194B2
公开(公告)日：2010-03-16
申请号：US11783468
申请日：2007-04-10
申请人： Tatsuya Hashimoto , Toshiyuki Maenosono , Taji Togawa , Takayuki Enda , Hideo Takagi
发明人： Tatsuya Hashimoto , Toshiyuki Maenosono , Taji Togawa , Takayuki Enda , Hideo Takagi
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L27/11526 , H01L21/02063 , H01L21/31133 , H01L21/31138 , H01L21/321 , H01L21/76801 , H01L21/76814 , H01L21/76834 , H01L24/02 , H01L24/03 , H01L24/05 , H01L27/105 , H01L27/115 , H01L27/11521 , H01L27/11531 , H01L2224/05599 , H01L2224/05624 , H01L2224/05669 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/04941 , H01L2924/05042 , H01L2924/1306 , H01L2924/13091 , H01L2924/30105 , H01L2924/00
摘要： Disclosed is a method of fabricating a semiconductor memory device including the step of irradiating ultraviolet rays on a metal interconnection at a bonding pad part, so that the metal interconnection can be prevented from being corroded because of a corrodent element in the process of erasing charges stored in a charge storage part. An oxide coating film is formed on the surface of the metal interconnection at the bonding pad part, and ultraviolet rays are irradiated onto the oxide coating film for erasing of charges from the floating gate.
摘要翻译：公开了一种制造半导体存储器件的方法，包括在接合焊盘部分的金属互连上照射紫外线的步骤，从而可以防止在消除电荷存储的过程中由于腐蚀元件而腐蚀金属互连在电荷存储部分中。在接合焊盘部分的金属互连的表面上形成氧化物涂膜，并且将紫外线照射到氧化物涂膜上，以从浮动栅极擦除电荷。

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