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    • 1. 发明授权
    • Method of fabricating an integrated pressure sensor
    • 制造集成压力传感器的方法
    • US5421956A
    • 1995-06-06
    • US072758
    • 1993-06-07
    • Kazuhiko KogaMichitaka HayashiKazuhisa Ikeda
    • Kazuhiko KogaMichitaka HayashiKazuhisa Ikeda
    • G01L9/00G01L27/00H01L21/306
    • G01L9/0042G01L19/0038G01L19/0084G01L19/141G01L27/005G01L9/0054Y10S148/028
    • A method of fabricating an integrated pressure sensor, which is capable of decreasing adverse effects caused by the distortion occurring at the time when a silicon wafer and a seat are joined together. On a silicon wafer 1 are formed a thin diaphragm 2 for each of the chips, a piezo-resitance layer for each of the chips, and a signal processing circuit with an adjusting resistor for each of the chips. The silicon wafer 1 is joined onto a glass seat 6 that has pressure-adjusting passges 7 formed therein to adjust the pressure exerted on the diaphragms 2 of the silicon wafer 1. Half-dicing is effected that reaches a predetermined depth of the glass seat 6 penetrating through the silicon wafer 1 for each of the chips, and resistance of the adjusting resistor is adjusted for each of the chips while adjusting the pressure applied to the diaphragms 2 via pressure-adjusting passages 7 in the seat in a step of adjusting the pressure sensitivity by trimming the wafer and by applying a negative pressure. Finally, the silicon wafer 1 and the glass seat 6 are cut by full-dicing for each of the chips.
    • 一种制造集成压力传感器的方法,其能够减少由硅晶片和座椅接合在一起时发生的失真引起的不利影响。 在硅晶片1上形成用于每个芯片的薄膜2,用于每个芯片的压电层,以及具有用于每个芯片的调整电阻器的信号处理电路。 将硅晶片1接合到具有形成在其中的压力调节通过部7的玻璃座6上,以调节施加在硅晶片1的隔膜2上的压力。达到玻璃座6的预定深度的半切割 对于每个芯片穿透硅晶片1,并且通过调节压力的步骤中的压力调节通道7调节施加到隔膜2的压力,调整每个芯片的调整电阻器的电阻 通过修整晶片并施加负压来实现灵敏度。 最后,通过用于每个芯片的全切割来切割硅晶片1和玻璃座6。
    • 2. 发明授权
    • Pressure-adjusting device for adjusting output of integrated pressure
sensor
    • 用于调节集成压力传感器输出的调压装置
    • US5528214A
    • 1996-06-18
    • US364993
    • 1994-12-28
    • Kazuhiko KogaMichitaka HayashiKazuhisa Ikeda
    • Kazuhiko KogaMichitaka HayashiKazuhisa Ikeda
    • G01L9/00G01L27/00G01L1/22
    • G01L9/0042G01L19/0038G01L19/0084G01L19/141G01L27/005G01L9/0054Y10S148/028
    • A pressure-adjusting device for adjusting an output of an integrated pressure sensor in which a silicon wafer is joined onto a seat that has pressure-adjusting passages formed therein, and which has formed in the silicon wafer a signal processing circuit with an adjusting resistor for each chip, a thin diaphragm for each chip and a piezo-resistance layer for each chip. The pressure-adjusting device includes a pressure-setting stage on which the seat is placed, the pressure setting stage having pressure-adjusting passages formed therein to adjust a pressure exerted on the respective thin diaphragm via the pressure-adjusting passages formed in the seat. A holding member is arranged on the pressure-setting stage as to surround at least an outer periphery of the seat. A first elastic air-tight member is arranged on the pressure-setting stage as to surround the outer periphery of the seat and be held compressed by the pressure-setting stage and by the holding member. A second elastic air-tight member is arranged to surround the outer periphery on an upper surface of said silicon wafer or to surround the outer periphery of either the seat or the silicon wafer, and be held compressed by the seat or by the silicon wafer and the holding member.
    • 一种压力调节装置,用于调节其中硅晶片与其中形成有压力调节通道的座上接合的集成压力传感器的输出,并且在硅晶片中形成具有调节电阻器的信号处理电路 每个芯片,每个芯片的薄膜片和每个芯片的压电层。 压力调节装置包括设置座椅的压力调节阶段,压力调节阶段具有形成在其中的压力调节通道,以经由形成在座椅中的压力调节通道来调节施加在各个薄隔膜上的压力。 保持构件布置在压力设定台上,以至少围绕座椅的外周。 第一弹性气密构件布置在压力设定台上,以围绕座椅的外周并通过压力稳定阶段和保持构件保持压缩。 第二弹性气密构件被布置成围绕所述硅晶片的上表面的外周围或者围绕座或硅晶片的外周,并被座椅或硅晶片压缩, 持有成员。